JP4637081B2 - クラスタ処理装置 - Google Patents
クラスタ処理装置 Download PDFInfo
- Publication number
- JP4637081B2 JP4637081B2 JP2006304358A JP2006304358A JP4637081B2 JP 4637081 B2 JP4637081 B2 JP 4637081B2 JP 2006304358 A JP2006304358 A JP 2006304358A JP 2006304358 A JP2006304358 A JP 2006304358A JP 4637081 B2 JP4637081 B2 JP 4637081B2
- Authority
- JP
- Japan
- Prior art keywords
- housing
- valve
- gas
- processing apparatus
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims description 90
- 239000007789 gas Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 62
- 229910052802 copper Inorganic materials 0.000 claims description 61
- 239000010949 copper Substances 0.000 claims description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 60
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 13
- 230000009467 reduction Effects 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 230000007613 environmental effect Effects 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 16
- 239000005751 Copper oxide Substances 0.000 description 16
- 229910000431 copper oxide Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005086 pumping Methods 0.000 description 7
- 238000007872 degassing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
203 扉
210 処理チャンバ、つまり(金属処理あるいはキャップ層形成)チャンバ、(銅処理あるいはキャップ層形成)装置
220 ロボット
227 領域
230 バルブ(第1バルブ)
240 排気バルブ(第2バルブ)
250 圧力計
260 遮蔽構造体つまり保護構造体
270 基板
Claims (12)
- 筐体と、
前記筐体内に設けられた少なくとも1つの処理チャンバと、
前記筐体内に設けられたロボットと、
前記筐体に接続された少なくとも1つのバルブと、
を備え、
前記筐体は、当該筐体内にガスを含むとともに、当該筐体の開口部に蓋をするように構成された少なくとも1つの扉を備え、
前記筐体内のガスは、還元ガスと無反応ガスと不活性ガスとの少なくとも1つを含み、
前記バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも大きい場合には前記バルブは前記筐体の上端領域近傍に設けられ、前記バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも小さい場合には前記バルブは前記筐体の下端領域近傍に設けられ、
前記ロボットは、前記扉と前記処理チャンバとの間で基板を搬送するように構成されていることを特徴とするクラスタ処理装置。 - 前記処理チャンバは、少なくとも1つの金属処理用チャンバと、キャップ層形成チャンバと、を備えることを特徴とする請求項1記載のクラスタ処理装置。
- 前記金属処理用チャンバは、ウェットクリーンベンチ、金属還元ウェットベンチ、金属還元ドライチャンバ、金属めっき槽、ドライエッチチャンバ、金属研磨装置、および低誘電率誘電体堆積チャンバの少なくとも1つを含むことを特徴とする請求項2記載のクラスタ処理装置。
- 前記キャップ層形成チャンバは、ケイ化コバルト、ケイ化タングステン、ケイ化チタン、窒化チタン、チタンと窒化チタンを積層したもの、タンタル、または窒化タンタル、からなる層を形成することを特徴とする請求項2記載のクラスタ処理装置。
- 前記少なくとも1つのバルブは、第1バルブと第2バルブとを備え、
前記第1バルブは、前記筐体内の圧力が第1の所定圧力レベル未満である場合には、前記筐体内にガスを噴射するように作動可能であり、かつ、
前記第2バルブは、前記筐体内の圧力が第2の所定圧力レベルを超えている場合には、前記筐体からガスを排気するように作動可能であることを特徴とする請求項1記載のクラスタ処理装置。 - 前記第1の所定圧力が1atmであり、前記第2の所定圧力が2.5atmであることを特徴とする請求項5記載のクラスタ処理装置。
- 前記筐体内のガスは、水素(H2)とアンモニア(NH3)との少なくとも1つを含むことを特徴とする請求項1記載のクラスタ処理装置。
- 前記筐体内の圧力は前記筐体周囲の環境圧力よりも高いことを特徴とする請求項1記載のクラスタ処理装置。
- 前記扉と前記処理チャンバとの間を前記ロボットが移動する経路を取り囲んだ遮蔽構造体をさらに備え、
前記バルブが当該遮蔽構造体の壁に設けられ、かつ、前記ガスが当該遮蔽構造体によって取り囲まれた領域内に配置されていることを特徴とする請求項1記載のクラスタ処理装置。 - 筐体と、
前記筐体内に設けられた、少なくとも1つの金属処理チャンバおよび少なくとも1つのキャップ層形成チャンバと、
前記筐体内に設けられたロボットと、
前記筐体内に設けられた、第1バルブおよび第2バルブと、
前記第1バルブと前記第2バルブとに接続された、少なくとも1つの圧力計と、
を備え、
前記筐体は、前記筐体内にガスを含むとともに、前記筐体の開口部に蓋をするように構成された少なくとも1つの扉を備え、
前記ガスは、窒素、ヘリウム、ネオン、アルゴン、クリプトン、キセノン、ラドン、水素、およびアンモニア、の少なくとも1つを含み、
前記第1バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも大きい場合には前記第1バルブは前記筐体の上端領域近傍に設けられ、前記第1バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも小さい場合には前記第1バルブは前記筐体の下端領域近傍に設けられ、
前記筐体のある領域が、前記筐体周囲の環境圧力よりも高圧であり、
前記ロボットは、前記扉から前記処理チャンバまで、および、前記チャンバの間で、基板を搬送するように構成され、或いは、前記扉から前記処理チャンバまで、または、前記チャンバの間で、基板を搬送するように構成され、
前記第1バルブは、前記筐体内の圧力が1atm未満である場合には、前記筐体内にガスを噴射するように作動可能であり、かつ、
前記第2バルブは、前記筐体内の圧力がある所定圧力レベルを超えている場合には、前記筐体からガスを排気するように作動可能であることを特徴とするクラスタ処理装置。 - 前記処理チャンバの間で前記ロボットが移動する経路を覆うように、前記ガスを有した前記筐体の領域を取り囲んだ遮蔽構造体をさらに備え、
前記バルブが当該遮蔽構造体の壁に設けられていることを特徴とする請求項10記載のクラスタ処理装置。 - 筐体と、
前記筐体内に設けられた、少なくとも1つの銅処理装置および少なくとも1つのキャップ層形成装置と、
前記筐体内に設けられたロボットと、
前記筐体内に設けられた、第1バルブおよび第2バルブと、
前記第1バルブと前記第2バルブとに接続された圧力計と、
を備え、
前記筐体は、前記筐体内にガスを含むとともに、前記筐体の開口部に蓋をするように構成された少なくとも1つの扉を備え、
前記ガスは、単位容積当り10ppm〜4%の水素または10ppm〜15.5%のアンモニアと、不活性ガスまたは窒素と、を含み、
前記第1バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも大きい場合には前記第1バルブは前記筐体の上端領域近傍に設けられ、前記第1バルブから噴射されるガスの分子量が前記筐体内のガスの分子量よりも小さい場合には前記第1バルブは前記筐体の下端領域近傍に設けられ、
前記筐体内の圧力は、前記筐体周囲の環境圧力よりも高く、
前記ロボットは、前記扉から前記銅処理装置まで、および、前記キャップ層形成装置と前記銅処理装置との間で、基板を搬送するように構成され、或いは、前記扉から前記銅処理装置まで、または、前記キャップ層形成装置と前記銅処理装置との間で、基板を搬送するように構成され、
前記第1バルブは、前記筐体内の圧力が1atm未満であるときには、前記筐体内に前記ガスを噴射するように作動可能であり、かつ、
前記第2バルブは、前記筐体内の圧力が2.5atmを超えているときには、前記筐体から水素を排気するように作動可能であることを特徴とするクラスタ処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74744206P | 2006-05-17 | 2006-05-17 | |
US11/419,933 US8322299B2 (en) | 2006-05-17 | 2006-05-23 | Cluster processing apparatus for metallization processing in semiconductor manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007311745A JP2007311745A (ja) | 2007-11-29 |
JP4637081B2 true JP4637081B2 (ja) | 2011-02-23 |
Family
ID=38608161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006304358A Active JP4637081B2 (ja) | 2006-05-17 | 2006-11-09 | クラスタ処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8322299B2 (ja) |
JP (1) | JP4637081B2 (ja) |
KR (1) | KR100839653B1 (ja) |
DE (1) | DE102006058814B4 (ja) |
FR (1) | FR2901405B1 (ja) |
SG (1) | SG137731A1 (ja) |
TW (1) | TWI310972B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100708529B1 (ko) * | 2005-12-14 | 2007-04-16 | 동부일렉트로닉스 주식회사 | 구리 배선 증착 방법 및 장치 |
FR2913145B1 (fr) * | 2007-02-22 | 2009-05-15 | Stmicroelectronics Crolles Sas | Assemblage de deux parties de circuit electronique integre |
US7758338B2 (en) * | 2007-05-29 | 2010-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier, port apparatus and facility interface and apparatus including same |
US8827695B2 (en) * | 2008-06-23 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer's ambiance control |
US20110226324A1 (en) * | 2010-03-16 | 2011-09-22 | Grain Free Products, Inc. | System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors |
EP2565910A4 (en) * | 2010-04-28 | 2014-01-15 | Youtec Co Ltd | SUBSTRATE PROCESSING DEVICE AND METHOD FOR THIN-CHEMICAL PRODUCTION |
US20140183051A1 (en) * | 2013-01-02 | 2014-07-03 | International Business Machines Corporation | Deposition of pure metals in 3d structures |
US10593593B2 (en) * | 2018-07-27 | 2020-03-17 | Globalfoundries Inc. | Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation |
KR20200143605A (ko) | 2019-06-14 | 2020-12-24 | 삼성전자주식회사 | 열분해막을 이용한 반도체 소자의 제조 방법, 반도체 제조 장비 및 이를 이용하여 제조된 반도체 소자 |
TW202208075A (zh) * | 2020-04-28 | 2022-03-01 | 日商東京威力科創股份有限公司 | 半導體裝置之製造方法、半導體製造裝置及系統 |
JP2022018359A (ja) * | 2020-07-15 | 2022-01-27 | 株式会社Screenホールディングス | 基板処理装置 |
CN112708926A (zh) * | 2020-12-16 | 2021-04-27 | 上海华力微电子有限公司 | 一种用于铜电镀机台的缓冲装置及铜电镀机台 |
KR20230114193A (ko) * | 2022-01-24 | 2023-08-01 | 주식회사 에이치피에스피 | 듀얼 고압 웨이퍼 처리설비를 이용한 웨이퍼 고압 처리 방법 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07211761A (ja) * | 1994-01-21 | 1995-08-11 | Tokyo Electron Ltd | 処理装置内の被処理体の搬送方法 |
JPH08298288A (ja) * | 1995-03-02 | 1996-11-12 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2001190945A (ja) * | 2000-01-13 | 2001-07-17 | Hitachi Kokusai Electric Inc | 半導体製造装置及び半導体製造装置に於ける排気方法 |
JP2002009088A (ja) * | 1990-11-16 | 2002-01-11 | Seiko Epson Corp | 薄膜半導体装置とその製造方法及びシリコン膜 |
JP2002043315A (ja) * | 2000-07-26 | 2002-02-08 | Sony Corp | 半導体装置およびその製造方法 |
JP2002198412A (ja) * | 2001-10-24 | 2002-07-12 | Tokyo Electron Ltd | 搬送処理方法及び搬送処理装置 |
JP2003077976A (ja) * | 2001-08-31 | 2003-03-14 | Tokyo Electron Ltd | 処理システム |
JP2004241420A (ja) * | 2003-02-03 | 2004-08-26 | Toshiba Matsushita Display Technology Co Ltd | 処理装置 |
JP2005175068A (ja) * | 2003-12-09 | 2005-06-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2005228814A (ja) * | 2004-02-10 | 2005-08-25 | Sharp Corp | 搬送システム |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3628717A (en) | 1969-11-12 | 1971-12-21 | Ibm | Apparatus for positioning and bonding |
JPS61291032A (ja) * | 1985-06-17 | 1986-12-20 | Fujitsu Ltd | 真空装置 |
US4718975A (en) * | 1986-10-06 | 1988-01-12 | Texas Instruments Incorporated | Particle shield |
US6288561B1 (en) | 1988-05-16 | 2001-09-11 | Elm Technology Corporation | Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus |
EP0497281B1 (en) * | 1991-01-29 | 1998-12-30 | Shinko Electric Co. Ltd. | Wafer airtight keeping unit |
US5620560A (en) * | 1994-10-05 | 1997-04-15 | Tokyo Electron Limited | Method and apparatus for heat-treating substrate |
US5911560A (en) | 1994-10-31 | 1999-06-15 | Saes Pure Gas, Inc. | Getter pump module and system |
US5685963A (en) | 1994-10-31 | 1997-11-11 | Saes Pure Gas, Inc. | In situ getter pump system and method |
TW333658B (en) * | 1996-05-30 | 1998-06-11 | Tokyo Electron Co Ltd | The substrate processing method and substrate processing system |
JPH11307481A (ja) | 1998-04-24 | 1999-11-05 | Sony Corp | 電解めっき装置および電解めっき方法 |
US6610150B1 (en) * | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
WO2000070666A1 (fr) * | 1999-05-14 | 2000-11-23 | Tokyo Electron Limited | Technique de traitement et dispositif correspondant |
US6178660B1 (en) * | 1999-08-03 | 2001-01-30 | International Business Machines Corporation | Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer |
KR100744888B1 (ko) * | 1999-11-02 | 2007-08-01 | 동경 엘렉트론 주식회사 | 소재를 초임계 처리하기 위한 장치 및 방법 |
EP1124252A2 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Apparatus and process for processing substrates |
US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
JP4753224B2 (ja) | 2000-08-22 | 2011-08-24 | 日本エー・エス・エム株式会社 | ガスラインシステム |
US6485248B1 (en) * | 2000-10-10 | 2002-11-26 | Applied Materials, Inc. | Multiple wafer lift apparatus and associated method |
JP2002147811A (ja) * | 2000-11-08 | 2002-05-22 | Sharp Corp | クリーンルーム |
US20030194877A1 (en) | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Integrated etch, rinse and dry, and anneal method and system |
DE10228998B4 (de) | 2002-06-28 | 2004-05-13 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum elektrochemischen Behandeln eines Substrats bei reduzierter Metallkorrosion |
US20040072450A1 (en) * | 2002-10-15 | 2004-04-15 | Collins Jimmy D. | Spin-coating methods and apparatuses for spin-coating, including pressure sensor |
JP4245996B2 (ja) | 2003-07-07 | 2009-04-02 | 株式会社荏原製作所 | 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置 |
US7465358B2 (en) * | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
US7256111B2 (en) | 2004-01-26 | 2007-08-14 | Applied Materials, Inc. | Pretreatment for electroless deposition |
US7712288B2 (en) * | 2004-05-28 | 2010-05-11 | Narayanan Ramasubramanian | Unified ingestion package and process for patient compliance with prescribed medication regimen |
KR20060016563A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 반도체 제조장치 및 그를 이용한 웨이퍼 상의 폴리머제거방법 |
-
2006
- 2006-05-23 US US11/419,933 patent/US8322299B2/en active Active
- 2006-07-25 SG SG200605023-1A patent/SG137731A1/en unknown
- 2006-11-09 JP JP2006304358A patent/JP4637081B2/ja active Active
- 2006-11-21 TW TW095142991A patent/TWI310972B/zh active
- 2006-11-30 FR FR0610469A patent/FR2901405B1/fr active Active
- 2006-12-13 DE DE102006058814A patent/DE102006058814B4/de active Active
-
2007
- 2007-01-12 KR KR1020070003856A patent/KR100839653B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002009088A (ja) * | 1990-11-16 | 2002-01-11 | Seiko Epson Corp | 薄膜半導体装置とその製造方法及びシリコン膜 |
JPH07211761A (ja) * | 1994-01-21 | 1995-08-11 | Tokyo Electron Ltd | 処理装置内の被処理体の搬送方法 |
JPH08298288A (ja) * | 1995-03-02 | 1996-11-12 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2001190945A (ja) * | 2000-01-13 | 2001-07-17 | Hitachi Kokusai Electric Inc | 半導体製造装置及び半導体製造装置に於ける排気方法 |
JP2002043315A (ja) * | 2000-07-26 | 2002-02-08 | Sony Corp | 半導体装置およびその製造方法 |
JP2003077976A (ja) * | 2001-08-31 | 2003-03-14 | Tokyo Electron Ltd | 処理システム |
JP2002198412A (ja) * | 2001-10-24 | 2002-07-12 | Tokyo Electron Ltd | 搬送処理方法及び搬送処理装置 |
JP2004241420A (ja) * | 2003-02-03 | 2004-08-26 | Toshiba Matsushita Display Technology Co Ltd | 処理装置 |
JP2005175068A (ja) * | 2003-12-09 | 2005-06-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2005228814A (ja) * | 2004-02-10 | 2005-08-25 | Sharp Corp | 搬送システム |
Also Published As
Publication number | Publication date |
---|---|
US20070267461A1 (en) | 2007-11-22 |
FR2901405B1 (fr) | 2013-09-13 |
TW200744145A (en) | 2007-12-01 |
SG137731A1 (en) | 2007-12-28 |
KR100839653B1 (ko) | 2008-06-20 |
JP2007311745A (ja) | 2007-11-29 |
US8322299B2 (en) | 2012-12-04 |
TWI310972B (en) | 2009-06-11 |
FR2901405A1 (fr) | 2007-11-23 |
DE102006058814A1 (de) | 2007-11-22 |
DE102006058814B4 (de) | 2010-04-08 |
KR20070111312A (ko) | 2007-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4637081B2 (ja) | クラスタ処理装置 | |
US8008184B2 (en) | Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium | |
US8440563B2 (en) | Film forming method and processing system | |
JP5487748B2 (ja) | バリヤ層、成膜方法及び処理システム | |
JP5683038B2 (ja) | 成膜方法 | |
KR101171587B1 (ko) | 반도체 장치의 제조 방법 및 기억 매체 | |
KR101188531B1 (ko) | 반도체 제조 장치, 반도체 장치의 제조 방법, 기억 매체 및 컴퓨터 프로그램 | |
JP5429078B2 (ja) | 成膜方法及び処理システム | |
US20060214305A1 (en) | Semiconductor device having oxidized metal film and manufacture method of the same | |
JP2008013848A (ja) | 成膜装置及び成膜方法 | |
KR20140143095A (ko) | 산화 망간막의 형성 방법 | |
JP2008300568A (ja) | 半導体装置の製造方法、半導体製造装置及び記憶媒体 | |
US11270911B2 (en) | Doping of metal barrier layers | |
US20150240344A1 (en) | Ruthenium film forming method, ruthenium film forming apparatus, and semiconductor device manufacturing method | |
JP2009043974A (ja) | 半導体装置の製造方法、半導体基板の処理装置及び記憶媒体 | |
KR101817833B1 (ko) | 텅스텐막의 성막 방법 | |
US10700006B2 (en) | Manufacturing method of nickel wiring | |
US9240379B2 (en) | Semiconductor device manufacturing method for suppresing wiring material from being diffused into insulating film, storage medium and semiconductor device | |
US20240006235A1 (en) | Composite barrier layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101101 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101122 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131203 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4637081 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |