FR2901405B1 - Appareils de traitement - Google Patents

Appareils de traitement

Info

Publication number
FR2901405B1
FR2901405B1 FR0610469A FR0610469A FR2901405B1 FR 2901405 B1 FR2901405 B1 FR 2901405B1 FR 0610469 A FR0610469 A FR 0610469A FR 0610469 A FR0610469 A FR 0610469A FR 2901405 B1 FR2901405 B1 FR 2901405B1
Authority
FR
France
Prior art keywords
treatment apparatus
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0610469A
Other languages
English (en)
Other versions
FR2901405A1 (fr
Inventor
Chen Hua Yu
Ming Hsing Tsai
Yi Li Hsiao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of FR2901405A1 publication Critical patent/FR2901405A1/fr
Application granted granted Critical
Publication of FR2901405B1 publication Critical patent/FR2901405B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material
FR0610469A 2006-05-17 2006-11-30 Appareils de traitement Active FR2901405B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74744206P 2006-05-17 2006-05-17
US11/419,933 US8322299B2 (en) 2006-05-17 2006-05-23 Cluster processing apparatus for metallization processing in semiconductor manufacturing

Publications (2)

Publication Number Publication Date
FR2901405A1 FR2901405A1 (fr) 2007-11-23
FR2901405B1 true FR2901405B1 (fr) 2013-09-13

Family

ID=38608161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0610469A Active FR2901405B1 (fr) 2006-05-17 2006-11-30 Appareils de traitement

Country Status (7)

Country Link
US (1) US8322299B2 (fr)
JP (1) JP4637081B2 (fr)
KR (1) KR100839653B1 (fr)
DE (1) DE102006058814B4 (fr)
FR (1) FR2901405B1 (fr)
SG (1) SG137731A1 (fr)
TW (1) TWI310972B (fr)

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KR100708529B1 (ko) * 2005-12-14 2007-04-16 동부일렉트로닉스 주식회사 구리 배선 증착 방법 및 장치
FR2913145B1 (fr) * 2007-02-22 2009-05-15 Stmicroelectronics Crolles Sas Assemblage de deux parties de circuit electronique integre
US7758338B2 (en) * 2007-05-29 2010-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate carrier, port apparatus and facility interface and apparatus including same
US8827695B2 (en) * 2008-06-23 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer's ambiance control
US20110226324A1 (en) * 2010-03-16 2011-09-22 Grain Free Products, Inc. System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors
WO2011135731A1 (fr) * 2010-04-28 2011-11-03 株式会社ユーテック Appareil de traitement de substrat, et procédé de fabrication de film mince
US20140183051A1 (en) * 2013-01-02 2014-07-03 International Business Machines Corporation Deposition of pure metals in 3d structures
US10593593B2 (en) * 2018-07-27 2020-03-17 Globalfoundries Inc. Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation
KR20200143605A (ko) 2019-06-14 2020-12-24 삼성전자주식회사 열분해막을 이용한 반도체 소자의 제조 방법, 반도체 제조 장비 및 이를 이용하여 제조된 반도체 소자
TW202208075A (zh) * 2020-04-28 2022-03-01 日商東京威力科創股份有限公司 半導體裝置之製造方法、半導體製造裝置及系統
JP2022018359A (ja) * 2020-07-15 2022-01-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN112708926A (zh) * 2020-12-16 2021-04-27 上海华力微电子有限公司 一种用于铜电镀机台的缓冲装置及铜电镀机台
WO2023140552A1 (fr) * 2022-01-24 2023-07-27 주식회사 에이치피에스피 Procédé de traitement de tranche haute pression utilisant une installation de traitement de tranche haute pression double

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US3628717A (en) * 1969-11-12 1971-12-21 Ibm Apparatus for positioning and bonding
JPS61291032A (ja) * 1985-06-17 1986-12-20 Fujitsu Ltd 真空装置
US4718975A (en) * 1986-10-06 1988-01-12 Texas Instruments Incorporated Particle shield
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
JP2002009088A (ja) * 1990-11-16 2002-01-11 Seiko Epson Corp 薄膜半導体装置とその製造方法及びシリコン膜
EP0497281B1 (fr) * 1991-01-29 1998-12-30 Shinko Electric Co. Ltd. Unité pour conserver hermétiquement des tranches semi-conductrices
JP3486821B2 (ja) * 1994-01-21 2004-01-13 東京エレクトロン株式会社 処理装置及び処理装置内の被処理体の搬送方法
US5620560A (en) * 1994-10-05 1997-04-15 Tokyo Electron Limited Method and apparatus for heat-treating substrate
US5685963A (en) * 1994-10-31 1997-11-11 Saes Pure Gas, Inc. In situ getter pump system and method
US5911560A (en) * 1994-10-31 1999-06-15 Saes Pure Gas, Inc. Getter pump module and system
JP3266492B2 (ja) 1995-03-02 2002-03-18 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
TW333658B (en) * 1996-05-30 1998-06-11 Tokyo Electron Co Ltd The substrate processing method and substrate processing system
JPH11307481A (ja) * 1998-04-24 1999-11-05 Sony Corp 電解めっき装置および電解めっき方法
US6610150B1 (en) * 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
KR100613674B1 (ko) * 1999-05-14 2006-08-21 동경 엘렉트론 주식회사 웨이퍼 처리 장치 및 처리 방법
US6178660B1 (en) * 1999-08-03 2001-01-30 International Business Machines Corporation Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer
JP5073902B2 (ja) * 1999-11-02 2012-11-14 東京エレクトロン株式会社 多数のワークピースを超臨界処理する方法及び装置
JP2001190945A (ja) 2000-01-13 2001-07-17 Hitachi Kokusai Electric Inc 半導体製造装置及び半導体製造装置に於ける排気方法
EP1124252A2 (fr) * 2000-02-10 2001-08-16 Applied Materials, Inc. Appareil et méthode de traitement de substrats
US6559070B1 (en) * 2000-04-11 2003-05-06 Applied Materials, Inc. Mesoporous silica films with mobile ion gettering and accelerated processing
JP2002043315A (ja) 2000-07-26 2002-02-08 Sony Corp 半導体装置およびその製造方法
JP4753224B2 (ja) 2000-08-22 2011-08-24 日本エー・エス・エム株式会社 ガスラインシステム
US6485248B1 (en) * 2000-10-10 2002-11-26 Applied Materials, Inc. Multiple wafer lift apparatus and associated method
JP2002147811A (ja) * 2000-11-08 2002-05-22 Sharp Corp クリーンルーム
JP4821074B2 (ja) * 2001-08-31 2011-11-24 東京エレクトロン株式会社 処理システム
JP3605692B2 (ja) * 2001-10-24 2004-12-22 東京エレクトロン株式会社 搬送処理方法及び搬送処理装置
US20030194877A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Integrated etch, rinse and dry, and anneal method and system
DE10228998B4 (de) * 2002-06-28 2004-05-13 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum elektrochemischen Behandeln eines Substrats bei reduzierter Metallkorrosion
US20040072450A1 (en) * 2002-10-15 2004-04-15 Collins Jimmy D. Spin-coating methods and apparatuses for spin-coating, including pressure sensor
JP2004241420A (ja) 2003-02-03 2004-08-26 Toshiba Matsushita Display Technology Co Ltd 処理装置
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
JP2005175068A (ja) 2003-12-09 2005-06-30 Hitachi Kokusai Electric Inc 基板処理装置
US7256111B2 (en) * 2004-01-26 2007-08-14 Applied Materials, Inc. Pretreatment for electroless deposition
JP2005228814A (ja) * 2004-02-10 2005-08-25 Sharp Corp 搬送システム
WO2005117697A2 (fr) * 2004-05-28 2005-12-15 Narayanan Ramasubramanian Paquet et procede d'ingestion unifiee assurant l'observation, par le patient, du regime medicamenteux therapeutique prescrit
KR20060016563A (ko) * 2004-08-18 2006-02-22 삼성전자주식회사 반도체 제조장치 및 그를 이용한 웨이퍼 상의 폴리머제거방법

Also Published As

Publication number Publication date
DE102006058814A1 (de) 2007-11-22
JP2007311745A (ja) 2007-11-29
FR2901405A1 (fr) 2007-11-23
US20070267461A1 (en) 2007-11-22
KR100839653B1 (ko) 2008-06-20
TWI310972B (en) 2009-06-11
DE102006058814B4 (de) 2010-04-08
US8322299B2 (en) 2012-12-04
KR20070111312A (ko) 2007-11-21
SG137731A1 (en) 2007-12-28
JP4637081B2 (ja) 2011-02-23
TW200744145A (en) 2007-12-01

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