JP4628032B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4628032B2
JP4628032B2 JP2004220500A JP2004220500A JP4628032B2 JP 4628032 B2 JP4628032 B2 JP 4628032B2 JP 2004220500 A JP2004220500 A JP 2004220500A JP 2004220500 A JP2004220500 A JP 2004220500A JP 4628032 B2 JP4628032 B2 JP 4628032B2
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Prior art keywords
film
gate electrode
layer
substrate
layer gate
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Expired - Fee Related
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JP2004220500A
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Japanese (ja)
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JP2006041265A (ja
JP2006041265A5 (enExample
Inventor
敦生 磯部
暁 斉藤
良信 浅見
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004220500A priority Critical patent/JP4628032B2/ja
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Publication of JP2006041265A5 publication Critical patent/JP2006041265A5/ja
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2004220500A 2004-07-28 2004-07-28 半導体装置及びその作製方法 Expired - Fee Related JP4628032B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004220500A JP4628032B2 (ja) 2004-07-28 2004-07-28 半導体装置及びその作製方法

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Application Number Priority Date Filing Date Title
JP2004220500A JP4628032B2 (ja) 2004-07-28 2004-07-28 半導体装置及びその作製方法

Publications (3)

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JP2006041265A JP2006041265A (ja) 2006-02-09
JP2006041265A5 JP2006041265A5 (enExample) 2007-08-23
JP4628032B2 true JP4628032B2 (ja) 2011-02-09

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8629490B2 (en) 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
US7932183B2 (en) 2006-11-14 2011-04-26 Mitsubishi Electric Corporation Method of manufacturing multilayer thin film pattern and display device
JP5500771B2 (ja) 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
US7994000B2 (en) 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5179219B2 (ja) * 2008-02-20 2013-04-10 東京エレクトロン株式会社 付着物除去方法及び基板処理方法
KR101813492B1 (ko) * 2011-01-05 2018-01-02 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
WO2013114882A1 (ja) * 2012-02-01 2013-08-08 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN106024633A (zh) * 2016-06-23 2016-10-12 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3648808B2 (ja) * 1995-10-18 2005-05-18 セイコーエプソン株式会社 薄膜半導体装置およびその製造方法
JP2001308337A (ja) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 低温ポリシリコンｔｆｔの製造方法
US6780694B2 (en) * 2003-01-08 2004-08-24 International Business Machines Corporation MOS transistor

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JP2006041265A (ja) 2006-02-09

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