JP4622764B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4622764B2
JP4622764B2 JP2005267840A JP2005267840A JP4622764B2 JP 4622764 B2 JP4622764 B2 JP 4622764B2 JP 2005267840 A JP2005267840 A JP 2005267840A JP 2005267840 A JP2005267840 A JP 2005267840A JP 4622764 B2 JP4622764 B2 JP 4622764B2
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JP
Japan
Prior art keywords
substrate
pressure
adhesive sheet
plasma processing
tray
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Expired - Fee Related
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JP2005267840A
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English (en)
Japanese (ja)
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JP2007081178A (ja
JP2007081178A5 (enExample
Inventor
清彦 高木
昌裕 山本
徹 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2005267840A priority Critical patent/JP4622764B2/ja
Publication of JP2007081178A publication Critical patent/JP2007081178A/ja
Publication of JP2007081178A5 publication Critical patent/JP2007081178A5/ja
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Publication of JP4622764B2 publication Critical patent/JP4622764B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2005267840A 2005-09-15 2005-09-15 プラズマ処理方法 Expired - Fee Related JP4622764B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005267840A JP4622764B2 (ja) 2005-09-15 2005-09-15 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005267840A JP4622764B2 (ja) 2005-09-15 2005-09-15 プラズマ処理方法

Publications (3)

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JP2007081178A JP2007081178A (ja) 2007-03-29
JP2007081178A5 JP2007081178A5 (enExample) 2007-07-19
JP4622764B2 true JP4622764B2 (ja) 2011-02-02

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JP2005267840A Expired - Fee Related JP4622764B2 (ja) 2005-09-15 2005-09-15 プラズマ処理方法

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JP (1) JP4622764B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011037008A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
JP5394216B2 (ja) * 2009-12-08 2014-01-22 アピックヤマダ株式会社 搬送治具及び切削装置
JP2016092308A (ja) * 2014-11-07 2016-05-23 株式会社アルバック 基板温度制御装置、基板処理システム、及び、基板温度制御方法
JP7660423B2 (ja) 2021-04-16 2025-04-11 株式会社小森コーポレーション フレキシブル基板用の搬送治具

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334540A (ja) * 1989-06-30 1991-02-14 Mitsubishi Electric Corp プラズマ処理装置およびその装置におけるウエハ温度制御方法
JP3507331B2 (ja) * 1998-05-20 2004-03-15 松下電器産業株式会社 基板温度制御方法及び装置
JP3977935B2 (ja) * 1998-08-05 2007-09-19 松下電器産業株式会社 プラズマ処理方法及び装置
JP3538705B2 (ja) * 1999-10-13 2004-06-14 株式会社村田製作所 電子部品の製造方法
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP4578701B2 (ja) * 2001-02-26 2010-11-10 キヤノンアネルバ株式会社 基板処理方法
JP3784274B2 (ja) * 2001-04-27 2006-06-07 京セラ株式会社 静電チャック
JP4308564B2 (ja) * 2002-04-09 2009-08-05 パナソニック株式会社 プラズマ処理装置及びプラズマ処理用トレー
JP4674792B2 (ja) * 2003-12-05 2011-04-20 東京エレクトロン株式会社 静電チャック

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JP2007081178A (ja) 2007-03-29

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