JP4614712B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4614712B2
JP4614712B2 JP2004235740A JP2004235740A JP4614712B2 JP 4614712 B2 JP4614712 B2 JP 4614712B2 JP 2004235740 A JP2004235740 A JP 2004235740A JP 2004235740 A JP2004235740 A JP 2004235740A JP 4614712 B2 JP4614712 B2 JP 4614712B2
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film
semiconductor film
region
mask
amorphous semiconductor
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Japanese (ja)
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JP2005101553A5 (enExample
JP2005101553A (ja
Inventor
明久 下村
崇 浜田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004235740A priority Critical patent/JP4614712B2/ja
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Publication of JP2005101553A5 publication Critical patent/JP2005101553A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004235740A 2003-08-27 2004-08-13 半導体装置の作製方法 Expired - Fee Related JP4614712B2 (ja)

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JP2004235740A JP4614712B2 (ja) 2003-08-27 2004-08-13 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003303442 2003-08-27
JP2004235740A JP4614712B2 (ja) 2003-08-27 2004-08-13 半導体装置の作製方法

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JP2005101553A JP2005101553A (ja) 2005-04-14
JP2005101553A5 JP2005101553A5 (enExample) 2007-07-26
JP4614712B2 true JP4614712B2 (ja) 2011-01-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575292B (zh) * 2015-01-09 2017-03-21 群創光電股份有限公司 電子裝置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5034360B2 (ja) * 2006-08-08 2012-09-26 ソニー株式会社 表示装置の製造方法
JP4600569B2 (ja) 2008-06-25 2010-12-15 ソニー株式会社 ドナー基板および表示装置の製造方法
US8922463B2 (en) 2010-04-26 2014-12-30 Samsung Display Co., Ltd. Organic light-emitting display apparatus
JP2011233502A (ja) * 2010-04-26 2011-11-17 Samsung Mobile Display Co Ltd 有機発光ディスプレイ装置
US9239484B2 (en) 2010-11-10 2016-01-19 Sharp Kabushiki Kaisha Display device substrate and method for fabricating same, and display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173415A (ja) * 1989-12-01 1991-07-26 Fujitsu Ltd 半導体装置の製造方法
JP2734357B2 (ja) * 1993-12-27 1998-03-30 日本電気株式会社 薄膜トランジスタの製造方法及び多結晶シリコン膜の製造方法
JPH08293464A (ja) * 1995-04-20 1996-11-05 Sharp Corp 半導体基板及び半導体装置の製造方法
JP2002261290A (ja) * 2001-03-01 2002-09-13 Sony Corp 半導体薄膜の形成方法及びそれを用いた薄膜トランジスタの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575292B (zh) * 2015-01-09 2017-03-21 群創光電股份有限公司 電子裝置

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