JP2005101553A5 - - Google Patents
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- Publication number
- JP2005101553A5 JP2005101553A5 JP2004235740A JP2004235740A JP2005101553A5 JP 2005101553 A5 JP2005101553 A5 JP 2005101553A5 JP 2004235740 A JP2004235740 A JP 2004235740A JP 2004235740 A JP2004235740 A JP 2004235740A JP 2005101553 A5 JP2005101553 A5 JP 2005101553A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor film
- amorphous semiconductor
- film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 48
- 239000004065 semiconductor Substances 0.000 claims 48
- 239000000463 material Substances 0.000 claims 15
- 239000010409 thin film Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 6
- 230000001678 irradiating effect Effects 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 230000008033 biological extinction Effects 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004235740A JP4614712B2 (ja) | 2003-08-27 | 2004-08-13 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003303442 | 2003-08-27 | ||
| JP2004235740A JP4614712B2 (ja) | 2003-08-27 | 2004-08-13 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005101553A JP2005101553A (ja) | 2005-04-14 |
| JP2005101553A5 true JP2005101553A5 (enExample) | 2007-07-26 |
| JP4614712B2 JP4614712B2 (ja) | 2011-01-19 |
Family
ID=34467243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004235740A Expired - Fee Related JP4614712B2 (ja) | 2003-08-27 | 2004-08-13 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4614712B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5034360B2 (ja) * | 2006-08-08 | 2012-09-26 | ソニー株式会社 | 表示装置の製造方法 |
| JP4600569B2 (ja) | 2008-06-25 | 2010-12-15 | ソニー株式会社 | ドナー基板および表示装置の製造方法 |
| US8922463B2 (en) | 2010-04-26 | 2014-12-30 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus |
| JP2011233502A (ja) * | 2010-04-26 | 2011-11-17 | Samsung Mobile Display Co Ltd | 有機発光ディスプレイ装置 |
| US9239484B2 (en) | 2010-11-10 | 2016-01-19 | Sharp Kabushiki Kaisha | Display device substrate and method for fabricating same, and display device |
| TWI575292B (zh) * | 2015-01-09 | 2017-03-21 | 群創光電股份有限公司 | 電子裝置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03173415A (ja) * | 1989-12-01 | 1991-07-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2734357B2 (ja) * | 1993-12-27 | 1998-03-30 | 日本電気株式会社 | 薄膜トランジスタの製造方法及び多結晶シリコン膜の製造方法 |
| JPH08293464A (ja) * | 1995-04-20 | 1996-11-05 | Sharp Corp | 半導体基板及び半導体装置の製造方法 |
| JP2002261290A (ja) * | 2001-03-01 | 2002-09-13 | Sony Corp | 半導体薄膜の形成方法及びそれを用いた薄膜トランジスタの製造方法 |
-
2004
- 2004-08-13 JP JP2004235740A patent/JP4614712B2/ja not_active Expired - Fee Related
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