JP4613367B2 - 積層型半導体装置用キャリア構成、この製造方法及び積層型半導体装置の製造方法 - Google Patents
積層型半導体装置用キャリア構成、この製造方法及び積層型半導体装置の製造方法 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
- H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
(1)上下半導体パッケージそれぞれの外形寸法ばらつき、
(2)半導体パッケージを収納する上段・下段キャリアの開口部の寸法ばらつき、
(3)上半導体パッケージを搭載した後のリフロー加熱によるはんだボールのセルフアライメント量、を考慮してキャリアを設計する必要がある。近年、積層型パッケージは総厚が薄くなってきており、キャリアの製造の難易度も必然的に高くなってきている。
Claims (15)
- 第1の半導体パッケージを載置するための開口部を有し、複数の薄板を積層して構成される下段キャリアと、
第2の半導体パッケージを前記第1の半導体パッケージ上に位置決めされた状態で載置するための開口部を有する上段キャリアと
を含み、
前記下段キャリアは磁石が埋め込まれている、積層型半導体装置製造用キャリア構成。 - 前記下段キャリアは、前記第1の半導体パッケージの外形サイズよりも開口面積の小さい薄板上に、前記第1の半導体パッケージの外形サイズよりも開口面積の大きい薄板が積層される請求項1記載の積層型半導体装置製造用キャリア構成。
- 前記下段キャリアは、複数の磁石が埋め込まれている請求項1記載の積層型半導体製造用キャリア構成。
- 前記下段キャリアは、前記開口部が複数個形成されている請求項1記載の積層型半導体装置用キャリア構成。
- 前記下段キャリアは、前記開口部のコーナ部に、前記第1の半導体パッケージのコーナ部に対する逃げ構造が形成されている請求項1記載の積層型半導体装置製造用キャリア構成。
- 前記逃げ構造は、前記下段キャリアを構成する一部の薄板に形成されている請求項5記載の積層型半導体装置製造用キャリア構成。
- 前記開口部となる開口パターンは、エッチング若しくは放電加工により形成される請求項1記載の積層型半導体装置製造用キャリア構成。
- 前記複数の薄板は、スポット溶接により接合される請求項7記載の積層型半導体装置製造用キャリア構成。
- 下段キャリアと上段キャリアからなる積層型半導体装置製造用キャリア構成の製造方法であって、
前記下段キャリアを構成する複数の薄板の開口パターンの形成をエッチング若しくは放電加工により行うステップを含み、
前記下段キャリアは磁石が埋め込まれている、積層半導体装置製造用キャリア構成の製造方法。 - 下段キャリアと上段キャリアからなる積層型半導体装置製造用キャリアの製造方法であって、
前記下段キャリアを構成する複数の薄板を積層し、該複数の薄板をスポット溶接により接合するステップを含み、
前記下段キャリアは磁石が埋め込まれている、積層型半導体装置製造用キャリア構成の製造方法。 - 第1の半導体パッケージを載置するための開口部を有すると共に複数の薄板を積層して構成される下段キャリアと第2の半導体パッケージを前記第1の半導体パッケージ上に位置決めされた状態で載置するための開口部を有する上段キャリアとを含む積層型半導体装置製造用キャリア構成に、前記第1の半導体パッケージと前記第2の半導体パッケージをセットするステップと、
リフローして前記第1の半導体パッケージと前記第2の半導体パッケージを接合するステップと
を含み、
前記下段キャリアは磁石が埋め込まれている、積層型半導体装置の製造方法。 - 積層された薄板と、半導体パッケージを位置決めし、当該半導体パッケージの上に別の半導体パッケージをマウントするための第1の開口部とを有するキャリアとを有し、
前記キャリアは埋め込まれた磁石を有する、キャリア構成。 - 前記キャリアは前記半導体パッケージの外形よりも小さな開口面積を持つ薄板と、当該薄板上に積層されかつ前記半導体パッケージの外形よりも大きな開口を有する別の薄板とを有する請求項12記載のキャリア構成。
- 前記キャリアは前記半導体パッケージのコーナ部に対する逃げ構造を有し、該逃げ構造は前記第1の開口部に配置されている請求項12記載のキャリア構成。
- 前記逃げ構造は、前記積層された薄板の一部によって画定されている請求項14記載のキャリア構成。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/012476 WO2006025084A1 (ja) | 2004-08-30 | 2004-08-30 | 積層型半導体装置用キャリア構成、この製造方法及び積層型半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2006025084A1 JPWO2006025084A1 (ja) | 2008-07-31 |
JP4613367B2 true JP4613367B2 (ja) | 2011-01-19 |
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JP2006531192A Expired - Fee Related JP4613367B2 (ja) | 2004-08-30 | 2004-08-30 | 積層型半導体装置用キャリア構成、この製造方法及び積層型半導体装置の製造方法 |
Country Status (3)
Country | Link |
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US (2) | US7489029B2 (ja) |
JP (1) | JP4613367B2 (ja) |
WO (1) | WO2006025084A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4675955B2 (ja) * | 2005-01-28 | 2011-04-27 | スパンション エルエルシー | 積層型半導体装置用キャリア及び積層型半導体装置の製造方法 |
DE102005061346A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
EP1791048B1 (de) * | 2005-11-25 | 2008-03-05 | Siemens Aktiengesellschaft | Automatisierungssystem mit einem angeschlossenen RFID-identifizierten Sensor oder Aktor |
JPWO2008096450A1 (ja) * | 2007-02-09 | 2010-05-20 | パナソニック株式会社 | 回路基板、積層回路基板および電子機器 |
US8932443B2 (en) | 2011-06-07 | 2015-01-13 | Deca Technologies Inc. | Adjustable wafer plating shield and method |
US9464362B2 (en) | 2012-07-18 | 2016-10-11 | Deca Technologies Inc. | Magnetically sealed wafer plating jig system and method |
US9427818B2 (en) * | 2014-01-20 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing boat design with pressure sensor |
US20150228517A1 (en) * | 2014-02-13 | 2015-08-13 | Apple Inc. | Universal process carrier for substrates |
CN104835808A (zh) * | 2015-03-16 | 2015-08-12 | 苏州晶方半导体科技股份有限公司 | 芯片封装方法及芯片封装结构 |
SG10201504586WA (en) * | 2015-06-10 | 2016-09-29 | Apple Inc | Carrier having locking mechanism for holding substrates |
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JPH0574978A (ja) * | 1991-09-13 | 1993-03-26 | Miyagi Oki Denki Kk | 半導体チツプ実装基板及びその製造方法 |
JPH1145956A (ja) * | 1997-05-17 | 1999-02-16 | Hyundai Electron Ind Co Ltd | パッケージされた集積回路素子及びその製造方法 |
JPH11251483A (ja) * | 1998-03-06 | 1999-09-17 | Hitachi Ltd | 半導体装置 |
JP2003289120A (ja) * | 2002-01-24 | 2003-10-10 | Nec Electronics Corp | フリップチップ型半導体装置及びその製造方法 |
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-
2004
- 2004-08-30 WO PCT/JP2004/012476 patent/WO2006025084A1/ja active Application Filing
- 2004-08-30 JP JP2006531192A patent/JP4613367B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-30 US US11/214,630 patent/US7489029B2/en not_active Expired - Fee Related
-
2008
- 2008-12-03 US US12/315,417 patent/US9142440B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03280496A (ja) * | 1990-03-28 | 1991-12-11 | Taiyo Yuden Co Ltd | 多層基板の電子部品実装構造及びその実装方法 |
JPH0574978A (ja) * | 1991-09-13 | 1993-03-26 | Miyagi Oki Denki Kk | 半導体チツプ実装基板及びその製造方法 |
JPH1145956A (ja) * | 1997-05-17 | 1999-02-16 | Hyundai Electron Ind Co Ltd | パッケージされた集積回路素子及びその製造方法 |
JPH11251483A (ja) * | 1998-03-06 | 1999-09-17 | Hitachi Ltd | 半導体装置 |
JP2003289120A (ja) * | 2002-01-24 | 2003-10-10 | Nec Electronics Corp | フリップチップ型半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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WO2006025084A1 (ja) | 2006-03-09 |
US20090093085A1 (en) | 2009-04-09 |
US7489029B2 (en) | 2009-02-10 |
US20060043600A1 (en) | 2006-03-02 |
JPWO2006025084A1 (ja) | 2008-07-31 |
US9142440B2 (en) | 2015-09-22 |
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