JP4611492B2 - 半導体装置および半導体集積回路 - Google Patents

半導体装置および半導体集積回路 Download PDF

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Publication number
JP4611492B2
JP4611492B2 JP2000182300A JP2000182300A JP4611492B2 JP 4611492 B2 JP4611492 B2 JP 4611492B2 JP 2000182300 A JP2000182300 A JP 2000182300A JP 2000182300 A JP2000182300 A JP 2000182300A JP 4611492 B2 JP4611492 B2 JP 4611492B2
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semiconductor region
region
semiconductor
base
germanium
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Expired - Fee Related
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JP2000182300A
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English (en)
Japanese (ja)
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JP2001068480A5 (https=
JP2001068480A (ja
Inventor
勝由 鷲尾
礼子 速水
裕已 島本
将夫 近藤
克矢 小田
栄司 大植
正倫 田邊
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2000182300A priority Critical patent/JP4611492B2/ja
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Publication of JP2001068480A5 publication Critical patent/JP2001068480A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4251—Sealed packages
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects

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  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2000182300A 1999-06-23 2000-06-13 半導体装置および半導体集積回路 Expired - Fee Related JP4611492B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000182300A JP4611492B2 (ja) 1999-06-23 2000-06-13 半導体装置および半導体集積回路

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-177032 1999-06-23
JP17703299 1999-06-23
JP2000182300A JP4611492B2 (ja) 1999-06-23 2000-06-13 半導体装置および半導体集積回路

Publications (3)

Publication Number Publication Date
JP2001068480A JP2001068480A (ja) 2001-03-16
JP2001068480A5 JP2001068480A5 (https=) 2007-05-31
JP4611492B2 true JP4611492B2 (ja) 2011-01-12

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ID=26497711

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JP2000182300A Expired - Fee Related JP4611492B2 (ja) 1999-06-23 2000-06-13 半導体装置および半導体集積回路

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JP (1) JP4611492B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1265294A3 (en) * 2001-06-07 2004-04-07 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor
US7170112B2 (en) * 2002-10-30 2007-01-30 International Business Machines Corporation Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
WO2004064161A1 (ja) 2003-01-14 2004-07-29 Matsushita Electric Industrial Co., Ltd. 半導体集積回路の製造方法および半導体集積回路
JP4850398B2 (ja) * 2004-08-31 2012-01-11 株式会社日立製作所 半導体装置及びその製造方法
JP4829566B2 (ja) 2005-08-30 2011-12-07 株式会社日立製作所 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666321B2 (ja) * 1987-06-02 1994-08-24 日本電気株式会社 ヘテロ接合バイポ−ラトランジスタ
JPH0656853B2 (ja) * 1987-06-24 1994-07-27 日本電気株式会社 ヘテロ接合バイポ−ラトランジスタ
JP2600485B2 (ja) * 1990-11-28 1997-04-16 日本電気株式会社 半導体装置
JPH04332132A (ja) * 1991-05-02 1992-11-19 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタ
JPH05304165A (ja) * 1992-04-27 1993-11-16 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合トランジスタ
JPH08288300A (ja) * 1995-04-12 1996-11-01 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
JPH08288298A (ja) * 1995-04-20 1996-11-01 Mitsubishi Electric Corp バラスト抵抗及びヘテロ接合バイポーラトランジスタ

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JP2001068480A (ja) 2001-03-16

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