JP4601842B2 - 薄膜形成方法 - Google Patents

薄膜形成方法 Download PDF

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Publication number
JP4601842B2
JP4601842B2 JP2001053700A JP2001053700A JP4601842B2 JP 4601842 B2 JP4601842 B2 JP 4601842B2 JP 2001053700 A JP2001053700 A JP 2001053700A JP 2001053700 A JP2001053700 A JP 2001053700A JP 4601842 B2 JP4601842 B2 JP 4601842B2
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Japan
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coating liquid
mask
layer
film
substrate
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Expired - Fee Related
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JP2001053700A
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Japanese (ja)
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JP2001345176A (ja
JP2001345176A5 (enExample
Inventor
正明 ▲ひろ▼木
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2001345176A5 publication Critical patent/JP2001345176A5/ja
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JP2001053700A 2000-02-28 2001-02-28 薄膜形成方法 Expired - Fee Related JP4601842B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053700A JP4601842B2 (ja) 2000-02-28 2001-02-28 薄膜形成方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000050685 2000-02-28
JP2000-50685 2000-03-27
JP2000087702 2000-03-27
JP2000-87702 2000-03-27
JP2001053700A JP4601842B2 (ja) 2000-02-28 2001-02-28 薄膜形成方法

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JP2001345176A JP2001345176A (ja) 2001-12-14
JP2001345176A5 JP2001345176A5 (enExample) 2008-03-21
JP4601842B2 true JP4601842B2 (ja) 2010-12-22

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4789341B2 (ja) * 2001-03-30 2011-10-12 三洋電機株式会社 半導体装置及び半導体装置製造用マスク
US7199515B2 (en) 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
JP4407790B2 (ja) 2002-04-23 2010-02-03 セイコーエプソン株式会社 電子装置及びその駆動方法並びに電子回路の駆動方法
JP4628656B2 (ja) * 2002-07-09 2011-02-09 株式会社半導体エネルギー研究所 発光装置の製造装置及び発光装置の作製方法
TWI276366B (en) 2002-07-09 2007-03-11 Semiconductor Energy Lab Production apparatus and method of producing a light-emitting device by using the same apparatus
JP4144462B2 (ja) 2002-08-30 2008-09-03 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004145300A (ja) 2002-10-03 2004-05-20 Seiko Epson Corp 電子回路、電子回路の駆動方法、電子装置、電気光学装置、電気光学装置の駆動方法及び電子機器
JP2006072385A (ja) * 2002-10-03 2006-03-16 Seiko Epson Corp 電子装置及び電子機器
WO2004045252A1 (ja) * 2002-11-11 2004-05-27 Semiconductor Energy Laboratory Co., Ltd. 発光装置の作製方法
KR101213937B1 (ko) * 2005-04-18 2012-12-18 엘지디스플레이 주식회사 일렉트로-루미네센스 표시장치
JP5130616B2 (ja) * 2005-09-29 2013-01-30 凸版印刷株式会社 薄膜形成装置
US8254865B2 (en) 2006-04-07 2012-08-28 Belair Networks System and method for frequency offsetting of information communicated in MIMO-based wireless networks
US7881690B2 (en) 2006-04-07 2011-02-01 Belair Networks Inc. System and method for zero intermediate frequency filtering of information communicated in wireless networks
JPWO2008096641A1 (ja) * 2007-02-06 2010-05-20 株式会社東芝 パターン形成装置、およびパターン形成方法
JP2008257271A (ja) * 2008-07-04 2008-10-23 Canon Inc 表示装置
JP5940808B2 (ja) 2009-07-02 2016-06-29 シャープ株式会社 有機ｅｌ素子、有機ｅｌ素子の製造方法、および有機ｅｌ表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442220B2 (enExample) * 1974-04-17 1979-12-13
JPS5687445A (en) * 1979-12-18 1981-07-16 Ricoh Co Ltd Liquid jet head
JPS5689954A (en) * 1979-12-24 1981-07-21 Casio Comput Co Ltd Ink jetting apparatus
JP3071626B2 (ja) * 1993-12-27 2000-07-31 シャープ株式会社 画像形成装置
JP3500777B2 (ja) * 1995-06-22 2004-02-23 セイコーエプソン株式会社 基板のコーティング方法、基板のコーティング装置、液晶表示体の製造方法、および面照明装置の製造方法
JP3694086B2 (ja) * 1996-03-01 2005-09-14 富士写真フイルム株式会社 インクジェット記録装置
JP3036436B2 (ja) * 1996-06-19 2000-04-24 セイコーエプソン株式会社 アクティブマトリックス型有機ｅｌ表示体の製造方法
JP3786427B2 (ja) * 1996-09-19 2006-06-14 セイコーエプソン株式会社 発光装置の製造方法
JP2000255051A (ja) * 1999-03-10 2000-09-19 Hitachi Ltd 印字装置

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