JP4597367B2 - プラズマ発生装置及びプラズマ発生方法 - Google Patents
プラズマ発生装置及びプラズマ発生方法 Download PDFInfo
- Publication number
- JP4597367B2 JP4597367B2 JP2000541717A JP2000541717A JP4597367B2 JP 4597367 B2 JP4597367 B2 JP 4597367B2 JP 2000541717 A JP2000541717 A JP 2000541717A JP 2000541717 A JP2000541717 A JP 2000541717A JP 4597367 B2 JP4597367 B2 JP 4597367B2
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- high frequency
- plasma
- phase shifter
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 46
- 230000008878 coupling Effects 0.000 claims description 41
- 238000010168 coupling process Methods 0.000 claims description 41
- 238000005859 coupling reaction Methods 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 26
- 239000007789 gas Substances 0.000 description 23
- 230000001939 inductive effect Effects 0.000 description 18
- 238000012545 processing Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000009826 distribution Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 11
- 230000007423 decrease Effects 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000003993 interaction Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920004738 ULTEM® Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/052,144 US6155199A (en) | 1998-03-31 | 1998-03-31 | Parallel-antenna transformer-coupled plasma generation system |
| US09/052,144 | 1998-03-31 | ||
| PCT/US1999/006495 WO1999050885A1 (en) | 1998-03-31 | 1999-03-25 | Parallel-antenna transformer-coupled plasma generation systems |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002510841A JP2002510841A (ja) | 2002-04-09 |
| JP2002510841A5 JP2002510841A5 (enExample) | 2006-05-18 |
| JP4597367B2 true JP4597367B2 (ja) | 2010-12-15 |
Family
ID=21975750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000541717A Expired - Lifetime JP4597367B2 (ja) | 1998-03-31 | 1999-03-25 | プラズマ発生装置及びプラズマ発生方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6155199A (enExample) |
| JP (1) | JP4597367B2 (enExample) |
| KR (1) | KR100602074B1 (enExample) |
| WO (1) | WO1999050885A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI861948B (zh) * | 2022-06-22 | 2024-11-11 | 大陸商深圳市恒運昌真空技術股份有限公司 | 電流控制方法和能量輻射系統 |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6558504B1 (en) * | 1998-12-21 | 2003-05-06 | Research Triangle Institute | Plasma processing system and method |
| KR100745495B1 (ko) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | 반도체 제조방법 및 반도체 제조장치 |
| DE19955671B4 (de) * | 1999-11-19 | 2004-07-22 | Muegge Electronic Gmbh | Vorrichtung zur Erzeugung von Plasma |
| US6508198B1 (en) * | 2000-05-11 | 2003-01-21 | Applied Materials Inc. | Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer |
| US6459066B1 (en) * | 2000-08-25 | 2002-10-01 | Board Of Regents, The University Of Texas System | Transmission line based inductively coupled plasma source with stable impedance |
| KR100411133B1 (ko) * | 2001-06-27 | 2003-12-12 | 주성엔지니어링(주) | 바람개비형 병렬 공명 안테나 |
| US20040194890A1 (en) * | 2001-09-28 | 2004-10-07 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
| JP3823069B2 (ja) * | 2002-06-12 | 2006-09-20 | 株式会社アルバック | 磁気中性線放電プラズマ処理装置 |
| KR100483355B1 (ko) * | 2002-11-14 | 2005-04-15 | 학교법인 성균관대학 | 자장강화된 외장형 선형 안테나를 구비하는 대면적 처리용유도 결합 플라즈마 소오스 |
| US7006311B2 (en) * | 2002-12-27 | 2006-02-28 | Matsushita Electric Industrial Co., Ltd | Systems for preventing channel control values from being corrupted to thereby improve servo-demodulation robustness |
| US6995935B2 (en) * | 2002-12-27 | 2006-02-07 | Matsushita Electric Industrial Co., Ltd. | Methods for detecting multiple occurrences of a SAM pattern to thereby improve servo-demodulation robustness |
| US7006315B2 (en) * | 2002-12-27 | 2006-02-28 | Matsushita Electric Industrial Co., Ltd. | Systems for improving servo-demodulation robustness |
| US7016133B2 (en) * | 2002-12-27 | 2006-03-21 | Matsushita Electric Industrial Co., Ltd. | Systems for detecting multiple occurrences of a SAM pattern to thereby improve servo-demodulation robustness |
| US6943981B2 (en) * | 2002-12-27 | 2005-09-13 | Matsushita Electric Co., Ltd. | Methods for improving servo-demodulation robustness |
| US7006312B2 (en) * | 2002-12-27 | 2006-02-28 | Matsushita Electic Industrial Co., Ltd. | Methods for preventing channel control values from being corrupted to thereby improve servo-demodulation robustness |
| US7212078B2 (en) * | 2003-02-25 | 2007-05-01 | Tokyo Electron Limited | Method and assembly for providing impedance matching network and network assembly |
| US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
| US7072128B2 (en) | 2003-07-16 | 2006-07-04 | Matsushita Electric Industrial Co., Ltd. | Methods for searching for SAM patterns at multiple nominal frequencies |
| US7075742B2 (en) * | 2003-07-16 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Servo demodulator systems including multiple servo demodulators |
| US7054083B2 (en) * | 2003-07-16 | 2006-05-30 | Matsushita Electric Industrial Co., Ltd. | Systems for searching for SAM patterns at multiple nominal frequencies |
| US7092177B2 (en) * | 2003-07-16 | 2006-08-15 | Matsushita Electric Industrial Co., Ltd. | Methods for searching for SAM patterns using multiple sets of servo demodulation detection parameters |
| WO2005010917A1 (en) * | 2003-07-25 | 2005-02-03 | Nanyang Technological University | An apparatus and method for generating uniform plasmas |
| US6992855B2 (en) * | 2003-09-18 | 2006-01-31 | Matsushita Electric Industrial Co., Ltd. | Methods for limiting channel control values to thereby improve servo-demodulation robustness |
| US6992856B2 (en) * | 2003-09-18 | 2006-01-31 | Matsushita Electric Industrial Co., Ltd. | Systems for limiting channel control values to thereby improve servo-demodulation robustness |
| WO2006135515A1 (en) * | 2005-06-10 | 2006-12-21 | Bird Technologies Group Inc. | System and method for analyzing power flow in semiconductor plasma generation systems |
| US7845310B2 (en) * | 2006-12-06 | 2010-12-07 | Axcelis Technologies, Inc. | Wide area radio frequency plasma apparatus for processing multiple substrates |
| US9105449B2 (en) * | 2007-06-29 | 2015-08-11 | Lam Research Corporation | Distributed power arrangements for localizing power delivery |
| US8528498B2 (en) * | 2007-06-29 | 2013-09-10 | Lam Research Corporation | Integrated steerability array arrangement for minimizing non-uniformity |
| US8084356B2 (en) * | 2007-09-29 | 2011-12-27 | Lam Research Corporation | Methods of low-K dielectric and metal process integration |
| JP5329796B2 (ja) * | 2007-11-14 | 2013-10-30 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| KR101166988B1 (ko) * | 2007-12-25 | 2012-07-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 챔버의 전극에 대한 비대칭 rf 구동 |
| US20090257927A1 (en) * | 2008-02-29 | 2009-10-15 | Applied Materials, Inc. | Folded coaxial resonators |
| CN102027811B (zh) * | 2008-05-22 | 2015-12-09 | Emd株式会社 | 等离子体产生装置及等离子体处理装置 |
| JP4786723B2 (ja) * | 2009-01-23 | 2011-10-05 | 三菱重工業株式会社 | プラズマcvd装置とプラズマcvd装置用電極 |
| KR101256751B1 (ko) * | 2009-05-19 | 2013-04-19 | 닛신덴키 가부시키 가이샤 | 플라즈마 장치 |
| US8558461B2 (en) * | 2009-07-20 | 2013-10-15 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for inductive amplification of ion beam energy |
| JP4891384B2 (ja) * | 2009-12-10 | 2012-03-07 | 株式会社新川 | プラズマ発生装置 |
| KR101246859B1 (ko) * | 2011-01-10 | 2013-03-25 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
| JPWO2012120928A1 (ja) * | 2011-03-09 | 2014-07-17 | 日本碍子株式会社 | リアクタ構造及びプラズマ処理装置 |
| CN104080947B (zh) * | 2012-01-27 | 2016-08-24 | 应用材料公司 | 分段式天线组件 |
| US10170278B2 (en) * | 2013-01-11 | 2019-01-01 | Applied Materials, Inc. | Inductively coupled plasma source |
| CN105491780B (zh) | 2014-10-01 | 2018-03-30 | 日新电机株式会社 | 等离子体产生用的天线及具备该天线的等离子体处理装置 |
| US10903046B2 (en) * | 2016-11-03 | 2021-01-26 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| KR101826883B1 (ko) * | 2016-11-03 | 2018-02-08 | 인투코어테크놀로지 주식회사 | 유도 코일 구조체 및 유도 결합 플라즈마 발생 장치 |
| US10896806B2 (en) * | 2016-11-03 | 2021-01-19 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| US10541114B2 (en) * | 2016-11-03 | 2020-01-21 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| WO2018151114A1 (ja) * | 2017-02-16 | 2018-08-23 | 日新電機株式会社 | プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造 |
| JP6341329B1 (ja) * | 2017-02-16 | 2018-06-13 | 日新電機株式会社 | プラズマ発生用のアンテナ及びそれを備えるプラズマ処理装置 |
| KR102235221B1 (ko) * | 2017-02-16 | 2021-04-02 | 닛신덴키 가부시키 가이샤 | 플라즈마 발생용의 안테나, 그것을 구비하는 플라즈마 처리 장치 및 안테나 구조 |
| JP6931461B2 (ja) * | 2017-03-15 | 2021-09-08 | 日新電機株式会社 | プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造 |
| JP7209483B2 (ja) * | 2017-10-10 | 2023-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置および測定回路 |
| JP7001958B2 (ja) * | 2018-03-06 | 2022-01-20 | 日新電機株式会社 | プラズマ処理装置 |
| JP7359839B2 (ja) * | 2018-07-26 | 2023-10-11 | ラム リサーチ コーポレーション | 小型高密度プラズマ供給源 |
| WO2020088169A1 (zh) * | 2018-10-30 | 2020-05-07 | 北京北方华创微电子装备有限公司 | 感应线圈组及反应腔室 |
| US11056321B2 (en) | 2019-01-03 | 2021-07-06 | Lam Research Corporation | Metal contamination reduction in substrate processing systems with transformer coupled plasma |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| JPH04901A (ja) * | 1990-04-18 | 1992-01-06 | Mitsubishi Electric Corp | プラズマ装置の高周波給電方法及び装置 |
| JPH04362091A (ja) * | 1991-06-05 | 1992-12-15 | Mitsubishi Heavy Ind Ltd | プラズマ化学気相成長装置 |
| US5392018A (en) * | 1991-06-27 | 1995-02-21 | Applied Materials, Inc. | Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits |
| US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5231334A (en) * | 1992-04-15 | 1993-07-27 | Texas Instruments Incorporated | Plasma source and method of manufacturing |
| US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
| US5277751A (en) * | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
| JP2625072B2 (ja) * | 1992-09-08 | 1997-06-25 | アプライド マテリアルズ インコーポレイテッド | 電磁rf結合を用いたプラズマ反応装置及びその方法 |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| US5430355A (en) * | 1993-07-30 | 1995-07-04 | Texas Instruments Incorporated | RF induction plasma source for plasma processing |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
| JPH07122397A (ja) * | 1993-10-28 | 1995-05-12 | Kobe Steel Ltd | プラズマ処理装置 |
| TW296534B (enExample) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
| US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
| US5587038A (en) * | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
| US5580385A (en) * | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
| JPH0878191A (ja) * | 1994-09-06 | 1996-03-22 | Kobe Steel Ltd | プラズマ処理方法及びその装置 |
| US5779926A (en) * | 1994-09-16 | 1998-07-14 | Applied Materials, Inc. | Plasma process for etching multicomponent alloys |
| US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
| US5650032A (en) * | 1995-06-06 | 1997-07-22 | International Business Machines Corporation | Apparatus for producing an inductive plasma for plasma processes |
| US6264812B1 (en) * | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
| US5936352A (en) * | 1995-11-28 | 1999-08-10 | Nec Corporation | Plasma processing apparatus for producing plasma at low electron temperatures |
| US5965034A (en) * | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| JP3739137B2 (ja) * | 1996-06-18 | 2006-01-25 | 日本電気株式会社 | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
| JPH1074599A (ja) * | 1996-08-30 | 1998-03-17 | Plasma Syst:Kk | プラズマ処理方法および装置 |
| DE69736081T2 (de) * | 1996-09-27 | 2007-01-11 | Surface Technoloy Systems Plc | Plasmabearbeitungsvorrichtung |
| JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2000299199A (ja) * | 1999-04-13 | 2000-10-24 | Plasma System Corp | プラズマ発生装置およびプラズマ処理装置 |
-
1998
- 1998-03-31 US US09/052,144 patent/US6155199A/en not_active Expired - Lifetime
-
1999
- 1999-03-25 WO PCT/US1999/006495 patent/WO1999050885A1/en not_active Ceased
- 1999-03-25 KR KR1020007010807A patent/KR100602074B1/ko not_active Expired - Fee Related
- 1999-03-25 JP JP2000541717A patent/JP4597367B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI861948B (zh) * | 2022-06-22 | 2024-11-11 | 大陸商深圳市恒運昌真空技術股份有限公司 | 電流控制方法和能量輻射系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999050885A1 (en) | 1999-10-07 |
| KR100602074B1 (ko) | 2006-07-14 |
| KR20010042269A (ko) | 2001-05-25 |
| JP2002510841A (ja) | 2002-04-09 |
| US6155199A (en) | 2000-12-05 |
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