KR100602074B1 - 트랜스포머 결합 평형 안테나를 가진 플라즈마 발생장치 - Google Patents

트랜스포머 결합 평형 안테나를 가진 플라즈마 발생장치 Download PDF

Info

Publication number
KR100602074B1
KR100602074B1 KR1020007010807A KR20007010807A KR100602074B1 KR 100602074 B1 KR100602074 B1 KR 100602074B1 KR 1020007010807 A KR1020007010807 A KR 1020007010807A KR 20007010807 A KR20007010807 A KR 20007010807A KR 100602074 B1 KR100602074 B1 KR 100602074B1
Authority
KR
South Korea
Prior art keywords
antenna
high frequency
plasma
current
segments
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020007010807A
Other languages
English (en)
Korean (ko)
Other versions
KR20010042269A (ko
Inventor
첸지안제이.
벨트롭로버트쥐.
위커토마스이.
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20010042269A publication Critical patent/KR20010042269A/ko
Application granted granted Critical
Publication of KR100602074B1 publication Critical patent/KR100602074B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020007010807A 1998-03-31 1999-03-25 트랜스포머 결합 평형 안테나를 가진 플라즈마 발생장치 Expired - Fee Related KR100602074B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/052,144 US6155199A (en) 1998-03-31 1998-03-31 Parallel-antenna transformer-coupled plasma generation system
US09/052,144 1998-03-31
US9/052,144 1998-03-31

Publications (2)

Publication Number Publication Date
KR20010042269A KR20010042269A (ko) 2001-05-25
KR100602074B1 true KR100602074B1 (ko) 2006-07-14

Family

ID=21975750

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007010807A Expired - Fee Related KR100602074B1 (ko) 1998-03-31 1999-03-25 트랜스포머 결합 평형 안테나를 가진 플라즈마 발생장치

Country Status (4)

Country Link
US (1) US6155199A (enExample)
JP (1) JP4597367B2 (enExample)
KR (1) KR100602074B1 (enExample)
WO (1) WO1999050885A1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6558504B1 (en) * 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
DE19955671B4 (de) * 1999-11-19 2004-07-22 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
US6508198B1 (en) * 2000-05-11 2003-01-21 Applied Materials Inc. Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer
US6459066B1 (en) * 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
KR100411133B1 (ko) * 2001-06-27 2003-12-12 주성엔지니어링(주) 바람개비형 병렬 공명 안테나
US20040194890A1 (en) * 2001-09-28 2004-10-07 Tokyo Electron Limited Hybrid plasma processing apparatus
JP3823069B2 (ja) * 2002-06-12 2006-09-20 株式会社アルバック 磁気中性線放電プラズマ処理装置
KR100483355B1 (ko) * 2002-11-14 2005-04-15 학교법인 성균관대학 자장강화된 외장형 선형 안테나를 구비하는 대면적 처리용유도 결합 플라즈마 소오스
US7006311B2 (en) * 2002-12-27 2006-02-28 Matsushita Electric Industrial Co., Ltd Systems for preventing channel control values from being corrupted to thereby improve servo-demodulation robustness
US6995935B2 (en) * 2002-12-27 2006-02-07 Matsushita Electric Industrial Co., Ltd. Methods for detecting multiple occurrences of a SAM pattern to thereby improve servo-demodulation robustness
US7006315B2 (en) * 2002-12-27 2006-02-28 Matsushita Electric Industrial Co., Ltd. Systems for improving servo-demodulation robustness
US7016133B2 (en) * 2002-12-27 2006-03-21 Matsushita Electric Industrial Co., Ltd. Systems for detecting multiple occurrences of a SAM pattern to thereby improve servo-demodulation robustness
US6943981B2 (en) * 2002-12-27 2005-09-13 Matsushita Electric Co., Ltd. Methods for improving servo-demodulation robustness
US7006312B2 (en) * 2002-12-27 2006-02-28 Matsushita Electic Industrial Co., Ltd. Methods for preventing channel control values from being corrupted to thereby improve servo-demodulation robustness
US7212078B2 (en) * 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US7072128B2 (en) 2003-07-16 2006-07-04 Matsushita Electric Industrial Co., Ltd. Methods for searching for SAM patterns at multiple nominal frequencies
US7075742B2 (en) * 2003-07-16 2006-07-11 Matsushita Electric Industrial Co., Ltd. Servo demodulator systems including multiple servo demodulators
US7054083B2 (en) * 2003-07-16 2006-05-30 Matsushita Electric Industrial Co., Ltd. Systems for searching for SAM patterns at multiple nominal frequencies
US7092177B2 (en) * 2003-07-16 2006-08-15 Matsushita Electric Industrial Co., Ltd. Methods for searching for SAM patterns using multiple sets of servo demodulation detection parameters
WO2005010917A1 (en) * 2003-07-25 2005-02-03 Nanyang Technological University An apparatus and method for generating uniform plasmas
US6992855B2 (en) * 2003-09-18 2006-01-31 Matsushita Electric Industrial Co., Ltd. Methods for limiting channel control values to thereby improve servo-demodulation robustness
US6992856B2 (en) * 2003-09-18 2006-01-31 Matsushita Electric Industrial Co., Ltd. Systems for limiting channel control values to thereby improve servo-demodulation robustness
WO2006135515A1 (en) * 2005-06-10 2006-12-21 Bird Technologies Group Inc. System and method for analyzing power flow in semiconductor plasma generation systems
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
US9105449B2 (en) * 2007-06-29 2015-08-11 Lam Research Corporation Distributed power arrangements for localizing power delivery
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
US8084356B2 (en) * 2007-09-29 2011-12-27 Lam Research Corporation Methods of low-K dielectric and metal process integration
JP5329796B2 (ja) * 2007-11-14 2013-10-30 株式会社イー・エム・ディー プラズマ処理装置
KR101166988B1 (ko) * 2007-12-25 2012-07-24 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 챔버의 전극에 대한 비대칭 ｒｆ 구동
US20090257927A1 (en) * 2008-02-29 2009-10-15 Applied Materials, Inc. Folded coaxial resonators
CN102027811B (zh) * 2008-05-22 2015-12-09 Emd株式会社 等离子体产生装置及等离子体处理装置
JP4786723B2 (ja) * 2009-01-23 2011-10-05 三菱重工業株式会社 プラズマｃｖｄ装置とプラズマｃｖｄ装置用電極
KR101256751B1 (ko) * 2009-05-19 2013-04-19 닛신덴키 가부시키 가이샤 플라즈마 장치
US8558461B2 (en) * 2009-07-20 2013-10-15 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for inductive amplification of ion beam energy
JP4891384B2 (ja) * 2009-12-10 2012-03-07 株式会社新川 プラズマ発生装置
KR101246859B1 (ko) * 2011-01-10 2013-03-25 엘아이지에이디피 주식회사 플라즈마 처리장치
JPWO2012120928A1 (ja) * 2011-03-09 2014-07-17 日本碍子株式会社 リアクタ構造及びプラズマ処理装置
CN104080947B (zh) * 2012-01-27 2016-08-24 应用材料公司 分段式天线组件
US10170278B2 (en) * 2013-01-11 2019-01-01 Applied Materials, Inc. Inductively coupled plasma source
CN105491780B (zh) 2014-10-01 2018-03-30 日新电机株式会社 等离子体产生用的天线及具备该天线的等离子体处理装置
US10903046B2 (en) * 2016-11-03 2021-01-26 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
KR101826883B1 (ko) * 2016-11-03 2018-02-08 인투코어테크놀로지 주식회사 유도 코일 구조체 및 유도 결합 플라즈마 발생 장치
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US10541114B2 (en) * 2016-11-03 2020-01-21 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
WO2018151114A1 (ja) * 2017-02-16 2018-08-23 日新電機株式会社 プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造
JP6341329B1 (ja) * 2017-02-16 2018-06-13 日新電機株式会社 プラズマ発生用のアンテナ及びそれを備えるプラズマ処理装置
KR102235221B1 (ko) * 2017-02-16 2021-04-02 닛신덴키 가부시키 가이샤 플라즈마 발생용의 안테나, 그것을 구비하는 플라즈마 처리 장치 및 안테나 구조
JP6931461B2 (ja) * 2017-03-15 2021-09-08 日新電機株式会社 プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造
JP7209483B2 (ja) * 2017-10-10 2023-01-20 東京エレクトロン株式会社 プラズマ処理装置および測定回路
JP7001958B2 (ja) * 2018-03-06 2022-01-20 日新電機株式会社 プラズマ処理装置
JP7359839B2 (ja) * 2018-07-26 2023-10-11 ラム リサーチ コーポレーション 小型高密度プラズマ供給源
WO2020088169A1 (zh) * 2018-10-30 2020-05-07 北京北方华创微电子装备有限公司 感应线圈组及反应腔室
US11056321B2 (en) 2019-01-03 2021-07-06 Lam Research Corporation Metal contamination reduction in substrate processing systems with transformer coupled plasma
WO2023246663A1 (zh) * 2022-06-22 2023-12-28 深圳市恒运昌真空技术有限公司 电流控制方法和能量辐射系统

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US5392018A (en) * 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
GB9321489D0 (en) * 1993-10-19 1993-12-08 Central Research Lab Ltd Plasma processing
JPH07122397A (ja) * 1993-10-28 1995-05-12 Kobe Steel Ltd プラズマ処理装置
TW296534B (enExample) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JPH0878191A (ja) * 1994-09-06 1996-03-22 Kobe Steel Ltd プラズマ処理方法及びその装置
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
CA2207154A1 (en) * 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
JP3739137B2 (ja) * 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
JPH1074599A (ja) * 1996-08-30 1998-03-17 Plasma Syst:Kk プラズマ処理方法および装置
DE69736081T2 (de) * 1996-09-27 2007-01-11 Surface Technoloy Systems Plc Plasmabearbeitungsvorrichtung
JP3220394B2 (ja) * 1996-09-27 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置
JP2000299199A (ja) * 1999-04-13 2000-10-24 Plasma System Corp プラズマ発生装置およびプラズマ処理装置

Also Published As

Publication number Publication date
WO1999050885A1 (en) 1999-10-07
JP4597367B2 (ja) 2010-12-15
KR20010042269A (ko) 2001-05-25
JP2002510841A (ja) 2002-04-09
US6155199A (en) 2000-12-05

Similar Documents

Publication Publication Date Title
KR100602074B1 (ko) 트랜스포머 결합 평형 안테나를 가진 플라즈마 발생장치
KR100338057B1 (ko) 유도 결합형 플라즈마 발생용 안테나 장치
US6463875B1 (en) Multiple coil antenna for inductively-coupled plasma generation systems
US7976674B2 (en) Embedded multi-inductive large area plasma source
KR100417327B1 (ko) 진공플라즈마프로세서
TWI239794B (en) Plasma processing apparatus and method
KR100444189B1 (ko) 유도결합 플라즈마 소스의 임피던스 정합 회로
EP1058489A2 (en) Method and apparatus for generating a plasma
US20180374685A1 (en) Plasma reactor with electrode array in ceiling
JP2004532506A (ja) 誘導結合プラズマにおいてプラズマ分布と性能とを改良するための装置および方法
JP2004055600A (ja) プラズマ処理装置
JP3751909B2 (ja) プラズマ装置及びプラズマ処理基体
TWI279169B (en) Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
WO2002056649A1 (en) Plasma generator
JP2000235900A (ja) プラズマ処理装置
JP4452061B2 (ja) プラズマ発生装置用アンテナの整合方法及びプラズマ発生装置
JP2012517663A (ja) 大面積プラズマ処理装置
JP3197739B2 (ja) プラズマ処理装置
JP4447829B2 (ja) プラズマ処理システム
KR101712263B1 (ko) 헬리컬공명플라즈마 안테나 및 이를 구비하는 플라즈마 발생 장치
WO2003079740A1 (en) Plasma device
KR101040541B1 (ko) 플라즈마 발생용 하이브리드 안테나
US12074390B2 (en) Parallel resonance antenna for radial plasma control
KR100433032B1 (ko) 포토레지스터 애싱 장치
KR100488362B1 (ko) 저주파형 유도결합 플라즈마 발생장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130625

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140625

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150624

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160627

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170629

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180711

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180711