JP4592675B2 - 炭素ナノチューブを利用した相変化メモリ及びその製造方法 - Google Patents
炭素ナノチューブを利用した相変化メモリ及びその製造方法 Download PDFInfo
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- JP4592675B2 JP4592675B2 JP2006321082A JP2006321082A JP4592675B2 JP 4592675 B2 JP4592675 B2 JP 4592675B2 JP 2006321082 A JP2006321082 A JP 2006321082A JP 2006321082 A JP2006321082 A JP 2006321082A JP 4592675 B2 JP4592675 B2 JP 4592675B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 146
- 239000002041 carbon nanotube Substances 0.000 title claims description 145
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- 230000008859 change Effects 0.000 title claims description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000012782 phase change material Substances 0.000 claims description 67
- 239000012212 insulator Substances 0.000 claims description 48
- 239000003054 catalyst Substances 0.000 claims description 22
- 239000002109 single walled nanotube Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
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- 239000000126 substance Substances 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 4 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/75—Single-walled
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/752—Multi-walled
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- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Carbon And Carbon Compounds (AREA)
Description
302、402、502 触媒
203、303、403、503 炭素ナノチューブ電極
205、305、405、505 絶縁体
207、307、407、507 相変化物質層
509 熱生成抵抗層
Claims (9)
- 外部電流を供給する電流源電極と、
少なくとも2つの異なる状態を有する相変化物質層と、
前記電流源電極と前記相変化物質層との間に複数配列し、前記相変化物質層に伸びてオーバーラップされる炭素ナノチューブ電極と、
前記炭素ナノチューブ電極の外側に形成される絶縁体と
を備えることを特徴とする炭素ナノチューブを利用した相変化メモリ。 - 前記炭素ナノチューブ電極の直径が、1nm〜100nmの範囲であることを特徴とする請求項1に記載の炭素ナノチューブを利用した相変化メモリ。
- 前記炭素ナノチューブ電極の全体長に対して、前記相変化物質層に伸びてオーバーラップされる長さが1/10〜8/10であることを特徴とする請求項1に記載の炭素ナノチューブを利用した相変化メモリ。
- 前記炭素ナノチューブ電極が、単層ナノチューブで形成されることを特徴とする請求項1に記載の炭素ナノチューブを利用した相変化メモリ。
- (a)外部電流を供給する電流源電極上に複数の炭素ナノチューブを形成する触媒を配列するステップと、
(b)前記触媒をシードとして垂直方向に成長させることにより、複数の炭素ナノチューブ電極を形成するステップと、
(c)前記電流源電極上に前記炭素ナノチューブ電極が完全に覆われるように、絶縁体を蒸着させるステップと、
(d)前記蒸着するステップ後、前記炭素ナノチューブ電極が前記絶縁体の表面に露出するように、前記絶縁体の表面を研磨するステップと、
(e)前記絶縁体の表面に露出した前記炭素ナノチューブ電極が突出するように、前記絶縁体を選択的にエッチングするステップと、
(f)前記絶縁体上に相変化物質を蒸着して、前記突出した炭素ナノチューブ電極をオーバーラップさせるステップと
を含むことを特徴とする炭素ナノチューブを利用した相変化メモリの製造方法。 - 前記(a)ステップにおいて、
前記触媒が、Fe2O3、Pt、Co、Ni、Ti、Moのうち、少なくともいずれか1つ以上で形成されることを特徴とする請求項5に記載の炭素ナノチューブを利用した相変化メモリの製造方法。 - 前記(b)ステップにおいて、
前記複数の炭素ナノチューブ電極が、単層ナノチューブで形成されることを特徴とする請求項5に記載の炭素ナノチューブを利用した相変化メモリの製造方法。 - 前記(b)ステップにおいて、
前記複数の炭素ナノチューブ電極が、1nm〜100nmの範囲の直径に形成されることを特徴とする請求項5に記載の炭素ナノチューブを利用した相変化メモリの製造方法。 - 前記(e)ステップが、
前記突出する炭素ナノチューブ電極の長さが、全体長に対して1/10〜8/10の範囲となるようにエッチングするステップであることを特徴とする請求項5に記載の炭素ナノチューブを利用した相変化メモリの製造方法。
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KR1020060001336A KR100674144B1 (ko) | 2006-01-05 | 2006-01-05 | 탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법 |
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CN (1) | CN1996634B (ja) |
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JP2004351602A (ja) * | 2003-05-30 | 2004-12-16 | Fuji Xerox Co Ltd | カーボンナノチューブデバイスおよびその製造方法、並びに、カーボンナノチューブ転写体 |
JP2005272271A (ja) * | 2004-03-26 | 2005-10-06 | Nippon Telegr & Teleph Corp <Ntt> | カーボンナノチューブの製造方法及び半導体装置の製造方法 |
JP2006510218A (ja) * | 2002-12-13 | 2006-03-23 | オヴォニクス,インコーポレイテッド | 相変化メモリを形成する方法 |
JP2006196900A (ja) * | 2005-01-12 | 2006-07-27 | Samsung Electronics Co Ltd | 相転移ram動作方法 |
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KR100493166B1 (ko) * | 2002-12-30 | 2005-06-02 | 삼성전자주식회사 | 수직나노튜브를 이용한 메모리 |
KR100521988B1 (ko) * | 2003-01-29 | 2005-10-17 | 재단법인서울대학교산학협력재단 | 나노 구조물을 이용한 커패시터를 포함하는 반도체 소자 및 그 제조 방법 |
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JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
KR100645064B1 (ko) * | 2005-05-23 | 2006-11-10 | 삼성전자주식회사 | 금속 산화물 저항 기억소자 및 그 제조방법 |
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US20070292985A1 (en) * | 2006-06-16 | 2007-12-20 | Yuegang Zhang | Phase change memory with nanofiber heater |
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JP2006510218A (ja) * | 2002-12-13 | 2006-03-23 | オヴォニクス,インコーポレイテッド | 相変化メモリを形成する方法 |
JP2004336054A (ja) * | 2003-05-01 | 2004-11-25 | Samsung Electronics Co Ltd | カーボンナノチューブを利用した半導体素子の配線形成方法およびその方法により製造された半導体素子 |
JP2004351602A (ja) * | 2003-05-30 | 2004-12-16 | Fuji Xerox Co Ltd | カーボンナノチューブデバイスおよびその製造方法、並びに、カーボンナノチューブ転写体 |
JP2005272271A (ja) * | 2004-03-26 | 2005-10-06 | Nippon Telegr & Teleph Corp <Ntt> | カーボンナノチューブの製造方法及び半導体装置の製造方法 |
JP2008515181A (ja) * | 2004-09-27 | 2008-05-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 相変化材料を有するナノワイヤを有する電気デバイス |
JP2006196900A (ja) * | 2005-01-12 | 2006-07-27 | Samsung Electronics Co Ltd | 相転移ram動作方法 |
JP2007081363A (ja) * | 2005-09-13 | 2007-03-29 | Samsung Electronics Co Ltd | 相変化メモリ及びその動作方法 |
JP2007157776A (ja) * | 2005-11-30 | 2007-06-21 | Toshiba Corp | 半導体記録素子 |
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CN1996634A (zh) | 2007-07-11 |
CN1996634B (zh) | 2010-10-13 |
US7749801B2 (en) | 2010-07-06 |
KR100674144B1 (ko) | 2007-01-29 |
US20100237318A1 (en) | 2010-09-23 |
JP2010287910A (ja) | 2010-12-24 |
US20070158697A1 (en) | 2007-07-12 |
JP2007184561A (ja) | 2007-07-19 |
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