JP4588300B2 - 半導体装置、電子機器 - Google Patents

半導体装置、電子機器 Download PDF

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Publication number
JP4588300B2
JP4588300B2 JP2003161409A JP2003161409A JP4588300B2 JP 4588300 B2 JP4588300 B2 JP 4588300B2 JP 2003161409 A JP2003161409 A JP 2003161409A JP 2003161409 A JP2003161409 A JP 2003161409A JP 4588300 B2 JP4588300 B2 JP 4588300B2
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Japan
Prior art keywords
transistor
drain
source
electrode
pixel
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JP2003161409A
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Japanese (ja)
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JP2004126513A (ja
JP2004126513A5 (enExample
Inventor
舜平 山崎
昌彦 早川
好文 棚田
光明 納
彩 安西
良太 福本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003161409A priority Critical patent/JP4588300B2/ja
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Publication of JP2004126513A5 publication Critical patent/JP2004126513A5/ja
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Publication of JP4588300B2 publication Critical patent/JP4588300B2/ja
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  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2003161409A 2002-06-05 2003-06-05 半導体装置、電子機器 Expired - Fee Related JP4588300B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003161409A JP4588300B2 (ja) 2002-06-05 2003-06-05 半導体装置、電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002164970 2002-06-05
JP2002228987 2002-08-06
JP2003161409A JP4588300B2 (ja) 2002-06-05 2003-06-05 半導体装置、電子機器

Publications (3)

Publication Number Publication Date
JP2004126513A JP2004126513A (ja) 2004-04-22
JP2004126513A5 JP2004126513A5 (enExample) 2006-07-20
JP4588300B2 true JP4588300B2 (ja) 2010-11-24

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JP2003161409A Expired - Fee Related JP4588300B2 (ja) 2002-06-05 2003-06-05 半導体装置、電子機器

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4574130B2 (ja) 2003-06-18 2010-11-04 株式会社半導体エネルギー研究所 半導体装置、電子機器
KR101169263B1 (ko) 2004-12-13 2012-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 이용하는 전자 기기
JP4945087B2 (ja) * 2005-03-31 2012-06-06 東芝モバイルディスプレイ株式会社 表示装置
JP2008134577A (ja) * 2006-10-24 2008-06-12 Eastman Kodak Co 表示装置及びその製造方法
JP2008233536A (ja) 2007-03-20 2008-10-02 Sony Corp 表示装置
JP5422945B2 (ja) * 2008-09-01 2014-02-19 セイコーエプソン株式会社 薄膜トランジスタの製造方法および電気光学装置の製造方法
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
JP5861187B2 (ja) * 2011-07-05 2016-02-16 株式会社Ｊｏｌｅｄ 有機ｅｌ素子およびその製造方法
TWI613759B (zh) * 2012-11-28 2018-02-01 半導體能源研究所股份有限公司 顯示裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06250219A (ja) * 1993-02-25 1994-09-09 Toshiba Corp 液晶表示装置
DE69838780T2 (de) * 1997-02-17 2008-10-30 Seiko Epson Corp. Stromgesteuerte emissionsanzeigevorrichtung, verfahren zu deren ansteuerung und herstellungsverfahren
JP4627822B2 (ja) * 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 表示装置
US6859193B1 (en) * 1999-07-14 2005-02-22 Sony Corporation Current drive circuit and display device using the same, pixel circuit, and drive method
JP4388648B2 (ja) * 1999-10-29 2009-12-24 シャープ株式会社 薄膜トランジスタ、液晶表示装置、およびその製造方法
JP4748847B2 (ja) * 1999-12-15 2011-08-17 株式会社半導体エネルギー研究所 Ｅｌ表示装置および電気器具
TW522454B (en) * 2000-06-22 2003-03-01 Semiconductor Energy Lab Display device

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JP2004126513A (ja) 2004-04-22

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