JP4587187B2 - Cmos型光電変換装置及び撮像システム - Google Patents

Cmos型光電変換装置及び撮像システム Download PDF

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Publication number
JP4587187B2
JP4587187B2 JP2008177064A JP2008177064A JP4587187B2 JP 4587187 B2 JP4587187 B2 JP 4587187B2 JP 2008177064 A JP2008177064 A JP 2008177064A JP 2008177064 A JP2008177064 A JP 2008177064A JP 4587187 B2 JP4587187 B2 JP 4587187B2
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Japan
Prior art keywords
impurity
region
photoelectric conversion
impurity region
conversion device
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Expired - Fee Related
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JP2008177064A
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Japanese (ja)
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JP2008263227A (ja
JP2008263227A5 (enrdf_load_stackoverflow
Inventor
浩 譲原
隆一 三島
高典 渡邉
武史 市川
清一 田村
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Canon Inc
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Canon Inc
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Priority to JP2008177064A priority Critical patent/JP4587187B2/ja
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Publication of JP2008263227A5 publication Critical patent/JP2008263227A5/ja
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Publication of JP4587187B2 publication Critical patent/JP4587187B2/ja
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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008177064A 2003-12-12 2008-07-07 Cmos型光電変換装置及び撮像システム Expired - Fee Related JP4587187B2 (ja)

Priority Applications (1)

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JP2008177064A JP4587187B2 (ja) 2003-12-12 2008-07-07 Cmos型光電変換装置及び撮像システム

Applications Claiming Priority (2)

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JP2003415011 2003-12-12
JP2008177064A JP4587187B2 (ja) 2003-12-12 2008-07-07 Cmos型光電変換装置及び撮像システム

Related Parent Applications (1)

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JP2004358342A Division JP4174468B2 (ja) 2003-12-12 2004-12-10 光電変換装置及び撮像システム

Related Child Applications (1)

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JP2010163306A Division JP4709319B2 (ja) 2003-12-12 2010-07-20 光電変換装置およびその製造方法、ならびに撮像システム

Publications (3)

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JP2008263227A JP2008263227A (ja) 2008-10-30
JP2008263227A5 JP2008263227A5 (enrdf_load_stackoverflow) 2010-02-04
JP4587187B2 true JP4587187B2 (ja) 2010-11-24

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JP2008177064A Expired - Fee Related JP4587187B2 (ja) 2003-12-12 2008-07-07 Cmos型光電変換装置及び撮像システム
JP2010163306A Expired - Lifetime JP4709319B2 (ja) 2003-12-12 2010-07-20 光電変換装置およびその製造方法、ならびに撮像システム

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JP2010163306A Expired - Lifetime JP4709319B2 (ja) 2003-12-12 2010-07-20 光電変換装置およびその製造方法、ならびに撮像システム

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JP (2) JP4587187B2 (enrdf_load_stackoverflow)
CN (1) CN101369594B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5959877B2 (ja) * 2012-02-17 2016-08-02 キヤノン株式会社 撮像装置
JP6355311B2 (ja) 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
JP2018107358A (ja) * 2016-12-27 2018-07-05 キヤノン株式会社 撮像装置の製造方法および撮像システム
JP7406887B2 (ja) 2019-08-07 2023-12-28 キヤノン株式会社 光電変換装置、放射線撮像システム、光電変換システム、移動体
US20230039770A1 (en) * 2020-01-10 2023-02-09 Sony Semiconductor Solutions Corporation Imaging element, manufacturing method, and electronic apparatus
CN116130499A (zh) * 2022-05-31 2023-05-16 神盾股份有限公司 光感测单元及光感测装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174358A (ja) * 1987-01-14 1988-07-18 Hitachi Ltd 固体撮像素子
JPH1126741A (ja) * 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
JP3934827B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 固体撮像装置
JP4449106B2 (ja) * 1999-07-14 2010-04-14 ソニー株式会社 Mos型固体撮像装置及びその製造方法
JP3315962B2 (ja) * 1999-12-01 2002-08-19 イノテック株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP3596749B2 (ja) * 1999-12-01 2004-12-02 日本ビクター株式会社 Cmosイメージセンサ
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3688980B2 (ja) * 2000-06-28 2005-08-31 株式会社東芝 Mos型固体撮像装置及びその製造方法
JP2002043557A (ja) * 2000-07-21 2002-02-08 Mitsubishi Electric Corp 固体撮像素子を有する半導体装置およびその製造方法
JP4270742B2 (ja) * 2000-11-30 2009-06-03 Necエレクトロニクス株式会社 固体撮像装置
US7324148B2 (en) * 2002-04-26 2008-01-29 Olympus Optical Co., Ltd. Camera and image pickup device unit used therefor having a sealing structure between a dust proofing member and an image pick up device
JP4174468B2 (ja) * 2003-12-12 2008-10-29 キヤノン株式会社 光電変換装置及び撮像システム

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Publication number Publication date
JP2008263227A (ja) 2008-10-30
JP2010245567A (ja) 2010-10-28
CN101369594B (zh) 2012-06-27
CN101369594A (zh) 2009-02-18
JP4709319B2 (ja) 2011-06-22

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