JP4583654B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4583654B2
JP4583654B2 JP2001135770A JP2001135770A JP4583654B2 JP 4583654 B2 JP4583654 B2 JP 4583654B2 JP 2001135770 A JP2001135770 A JP 2001135770A JP 2001135770 A JP2001135770 A JP 2001135770A JP 4583654 B2 JP4583654 B2 JP 4583654B2
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layer
etching
impurity region
film
impurity
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Expired - Fee Related
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JP2001135770A
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Japanese (ja)
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JP2002043329A (ja
JP2002043329A5 (enExample
Inventor
舜平 山崎
徹 高山
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001135770A priority Critical patent/JP4583654B2/ja
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Publication of JP2002043329A5 publication Critical patent/JP2002043329A5/ja
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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001135770A 2000-05-13 2001-05-07 半導体装置の作製方法 Expired - Fee Related JP4583654B2 (ja)

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JP2001135770A JP4583654B2 (ja) 2000-05-13 2001-05-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000180550 2000-05-13
JP2000-180550 2000-05-13
JP2001135770A JP4583654B2 (ja) 2000-05-13 2001-05-07 半導体装置の作製方法

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JP2002043329A JP2002043329A (ja) 2002-02-08
JP2002043329A5 JP2002043329A5 (enExample) 2008-05-29
JP4583654B2 true JP4583654B2 (ja) 2010-11-17

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JP2001135770A Expired - Fee Related JP4583654B2 (ja) 2000-05-13 2001-05-07 半導体装置の作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4402396B2 (ja) * 2003-08-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4537029B2 (ja) * 2003-09-30 2010-09-01 シャープ株式会社 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置
JP2014241363A (ja) 2013-06-12 2014-12-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102835255B1 (ko) * 2020-10-12 2025-07-16 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086579B2 (ja) * 1993-12-28 2000-09-11 シャープ株式会社 薄膜トランジスタの製造方法
JP3398453B2 (ja) * 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JPH11145112A (ja) * 1997-11-07 1999-05-28 Nec Corp パターニング方法

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JP2002043329A (ja) 2002-02-08

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