JP4583523B2 - Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 - Google Patents

Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 Download PDF

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JP4583523B2
JP4583523B2 JP14094599A JP14094599A JP4583523B2 JP 4583523 B2 JP4583523 B2 JP 4583523B2 JP 14094599 A JP14094599 A JP 14094599A JP 14094599 A JP14094599 A JP 14094599A JP 4583523 B2 JP4583523 B2 JP 4583523B2
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JP2000332293A (ja
JP2000332293A5 (enExample
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真也 石田
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Sharp Corp
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JP14094599A 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 Expired - Lifetime JP4583523B2 (ja)

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JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

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JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

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JP2000332293A JP2000332293A (ja) 2000-11-30
JP2000332293A5 JP2000332293A5 (enExample) 2006-03-23
JP4583523B2 true JP4583523B2 (ja) 2010-11-17

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Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
CN102918663B (zh) * 2010-03-01 2015-06-17 同和电子科技有限公司 半导体器件及其生产方法
CN108615725A (zh) 2012-07-11 2018-10-02 亮锐控股有限公司 降低或者消除ⅲ-氮化物结构中的纳米管缺陷
CN110350056B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 一种led外延层生长方法
CN112670378A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法

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