JP4575677B2 - 研磨パッド窓のための散乱防止層 - Google Patents
研磨パッド窓のための散乱防止層 Download PDFInfo
- Publication number
- JP4575677B2 JP4575677B2 JP2004026303A JP2004026303A JP4575677B2 JP 4575677 B2 JP4575677 B2 JP 4575677B2 JP 2004026303 A JP2004026303 A JP 2004026303A JP 2004026303 A JP2004026303 A JP 2004026303A JP 4575677 B2 JP4575677 B2 JP 4575677B2
- Authority
- JP
- Japan
- Prior art keywords
- window
- polishing pad
- wafer
- scattering layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims description 33
- 239000000463 material Substances 0.000 claims description 20
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 239000004922 lacquer Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 36
- 238000000034 method Methods 0.000 description 12
- 239000004814 polyurethane Substances 0.000 description 12
- 229920002635 polyurethane Polymers 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 8
- 238000011065 in-situ storage Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012625 in-situ measurement Methods 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007757 hot melt coating Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0214—Foldable telephones, i.e. with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/23—Construction or mounting of dials or of equivalent devices; Means for facilitating the use thereof
Landscapes
- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
次に、引き続き図面を参照して、計測される表面62を有するウェーハWのインシチュでの光学的計測を実施するための本発明の作動を説明する。作動に際して、光源71によって第一の光線70を発生させ、ウェーハ表面62に向ける。第一の光線70は、窓30及び散乱防止層50の両方を透過する波長を有する。
Claims (5)
- その中に形成された開口を有する研磨パッド本体と、
開口中に固定された窓であって、窓は上面と上面に対向しそれから一定の間隔をおいて配置された下面を含み、下面は、入射する光を散乱させることができる表面粗さを持つ窓と、
下面の上に形成された散乱防止層であって、
下面に隣接し表面粗さに適合する適合表面を有し、
適合表面に対向する実質的に平坦な面を有するに十分な厚さであり、
適合表面に対向する平坦な面を含み、
表面粗さによる光の波長が190ナノメータから3500ナノメータである光の散乱を減少させる散乱防止層と、
を含む、ケミカルメカニカル研磨に使用可能な研磨パッド。 - 表面粗さは、その上に入射する10%以上の光を散乱する、請求項1に記載の研磨パッド。
- 散乱防止層は透明な溶媒に溶かしたラッカを含む、請求項1に記載の研磨パッド。
- 散乱防止層は放射線硬化物質を含む、請求項1に記載の研磨パッド。
- 窓は第一の物質で作られ、散乱防止層も第一の物質で作られる、請求項1に記載の研磨パッド。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/357,024 US6676483B1 (en) | 2003-02-03 | 2003-02-03 | Anti-scattering layer for polishing pad windows |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004241775A JP2004241775A (ja) | 2004-08-26 |
JP4575677B2 true JP4575677B2 (ja) | 2010-11-04 |
Family
ID=29780494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004026303A Expired - Lifetime JP4575677B2 (ja) | 2003-02-03 | 2004-02-03 | 研磨パッド窓のための散乱防止層 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6676483B1 (ja) |
EP (1) | EP1442840B1 (ja) |
JP (1) | JP4575677B2 (ja) |
KR (1) | KR101109156B1 (ja) |
CN (1) | CN100509288C (ja) |
DE (1) | DE602004000552T2 (ja) |
TW (1) | TWI312715B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
AU2004225931A1 (en) | 2003-03-25 | 2004-10-14 | Neopad Technologies Corporation | Chip customized polish pads for chemical mechanical planarization (CMP) |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7195539B2 (en) * | 2003-09-19 | 2007-03-27 | Cabot Microelectronics Coporation | Polishing pad with recessed window |
WO2005088690A1 (ja) * | 2004-03-11 | 2005-09-22 | Toyo Tire & Rubber Co., Ltd. | 研磨パッドおよび半導体デバイスの製造方法 |
US20060089094A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
US7179159B2 (en) | 2005-05-02 | 2007-02-20 | Applied Materials, Inc. | Materials for chemical mechanical polishing |
JP4931133B2 (ja) * | 2007-03-15 | 2012-05-16 | 東洋ゴム工業株式会社 | 研磨パッド |
EP2227350A4 (en) * | 2007-11-30 | 2011-01-12 | Innopad Inc | CUSHION WITH FINISHED MOUNTING WINDOW FOR CHEMICAL-MECHANICAL POLISHING |
US8585790B2 (en) * | 2009-04-23 | 2013-11-19 | Applied Materials, Inc. | Treatment of polishing pad window |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
JP5620141B2 (ja) * | 2010-04-15 | 2014-11-05 | 東洋ゴム工業株式会社 | 研磨パッド |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
US8758659B2 (en) | 2010-09-29 | 2014-06-24 | Fns Tech Co., Ltd. | Method of grooving a chemical-mechanical planarization pad |
US8657653B2 (en) | 2010-09-30 | 2014-02-25 | Nexplanar Corporation | Homogeneous polishing pad for eddy current end-point detection |
US8628384B2 (en) * | 2010-09-30 | 2014-01-14 | Nexplanar Corporation | Polishing pad for eddy current end-point detection |
TWI676526B (zh) * | 2016-02-24 | 2019-11-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法及研磨方法 |
KR101945869B1 (ko) * | 2017-08-07 | 2019-02-11 | 에스케이씨 주식회사 | 우수한 기밀성을 갖는 연마패드 |
KR102580487B1 (ko) * | 2018-06-18 | 2023-09-21 | 주식회사 케이씨텍 | 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법 |
WO2022159810A1 (en) * | 2021-01-25 | 2022-07-28 | Cmc Materials, Inc. | Endpoint window with controlled texture surface |
KR102488101B1 (ko) * | 2021-05-04 | 2023-01-12 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
JP7466964B1 (ja) | 2023-07-03 | 2024-04-15 | 株式会社多聞 | 基板厚測定装置及び基板厚測定方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1170469A (ja) * | 1997-05-28 | 1999-03-16 | Lam Res Corp | 化学機械的研磨中に厚みをその場でモニタする方法及び装置 |
JP2001179617A (ja) * | 1999-12-27 | 2001-07-03 | Nikon Corp | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
JP2003285257A (ja) * | 2002-03-28 | 2003-10-07 | Toray Ind Inc | 研磨パッド、研磨装置および半導体の製造方法 |
JP2005538571A (ja) * | 2002-09-25 | 2005-12-15 | ピーピージー インダストリーズ オハイオ, インコーポレイテッド | 平坦化するための窓を有する研磨パッド |
Family Cites Families (14)
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US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US6716085B2 (en) | 2001-12-28 | 2004-04-06 | Applied Materials Inc. | Polishing pad with transparent window |
US6179709B1 (en) | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
KR100435246B1 (ko) * | 1999-03-31 | 2004-06-11 | 가부시키가이샤 니콘 | 연마체, 연마장치, 연마장치의 조정방법, 연마막 두께또는 연마종점의 측정방법, 및 반도체 디바이스의 제조방법 |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
US6544104B1 (en) * | 1999-08-27 | 2003-04-08 | Asahi Kasei Kabushiki Kaisha | Polishing pad and polisher |
US6454630B1 (en) | 1999-09-14 | 2002-09-24 | Applied Materials, Inc. | Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same |
US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
EP1224060B1 (en) | 1999-09-29 | 2004-06-23 | Rodel Holdings, Inc. | Polishing pad |
WO2002010729A1 (en) * | 2000-07-31 | 2002-02-07 | Asml Us, Inc. | In-situ method and apparatus for end point detection in chemical mechanical polishing |
JP2003048151A (ja) | 2001-08-08 | 2003-02-18 | Rodel Nitta Co | 研磨パッド |
JP2003133270A (ja) | 2001-10-26 | 2003-05-09 | Jsr Corp | 化学機械研磨用窓材及び研磨パッド |
-
2003
- 2003-02-03 US US10/357,024 patent/US6676483B1/en not_active Expired - Lifetime
-
2004
- 2004-01-29 EP EP04250485A patent/EP1442840B1/en not_active Expired - Lifetime
- 2004-01-29 DE DE602004000552T patent/DE602004000552T2/de not_active Expired - Lifetime
- 2004-02-02 TW TW093102310A patent/TWI312715B/zh not_active IP Right Cessation
- 2004-02-03 KR KR1020040007019A patent/KR101109156B1/ko active IP Right Grant
- 2004-02-03 CN CNB2004100283204A patent/CN100509288C/zh not_active Expired - Lifetime
- 2004-02-03 JP JP2004026303A patent/JP4575677B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1170469A (ja) * | 1997-05-28 | 1999-03-16 | Lam Res Corp | 化学機械的研磨中に厚みをその場でモニタする方法及び装置 |
JP2001179617A (ja) * | 1999-12-27 | 2001-07-03 | Nikon Corp | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
JP2003285257A (ja) * | 2002-03-28 | 2003-10-07 | Toray Ind Inc | 研磨パッド、研磨装置および半導体の製造方法 |
JP2005538571A (ja) * | 2002-09-25 | 2005-12-15 | ピーピージー インダストリーズ オハイオ, インコーポレイテッド | 平坦化するための窓を有する研磨パッド |
Also Published As
Publication number | Publication date |
---|---|
KR101109156B1 (ko) | 2012-02-24 |
US6676483B1 (en) | 2004-01-13 |
DE602004000552D1 (de) | 2006-05-18 |
DE602004000552T2 (de) | 2007-04-05 |
CN100509288C (zh) | 2009-07-08 |
CN1530205A (zh) | 2004-09-22 |
EP1442840A1 (en) | 2004-08-04 |
KR20040070444A (ko) | 2004-08-09 |
TW200507983A (en) | 2005-03-01 |
TWI312715B (en) | 2009-08-01 |
JP2004241775A (ja) | 2004-08-26 |
EP1442840B1 (en) | 2006-03-29 |
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