JP4574547B2 - 半導体光学装置 - Google Patents
半導体光学装置 Download PDFInfo
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- JP4574547B2 JP4574547B2 JP2005501545A JP2005501545A JP4574547B2 JP 4574547 B2 JP4574547 B2 JP 4574547B2 JP 2005501545 A JP2005501545 A JP 2005501545A JP 2005501545 A JP2005501545 A JP 2005501545A JP 4574547 B2 JP4574547 B2 JP 4574547B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
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- 230000005855 radiation Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 21
- 238000012544 monitoring process Methods 0.000 claims description 21
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
- G01N2201/0612—Laser diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Semiconductor Lasers (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
Claims (16)
- サンプル又は他のエレメントに投射すべき光を放射するように配列され且つ前記サンプル又は他のエレメントから受光した光に反応する単一の基板から成り、前記サンプル又は他のエレメントから受光した光に依存して変化する特性を監視する手段と、前記基板の一部として一体であって高低交互の複数の屈折率材料層を有して光が放射される反射器から成っていて第1の波長範囲の光を放射する共振空胴光放射エレメントと、前記反射器に組み込まれるか組み合わせられた吸収層とを更に備え、前記吸収層は、前記第1の波長範囲の光を吸収することなく前記第1の波長範囲とは異なる第2の波長範囲の光を吸収する帯域ギャップ材料から実現される半導体放射・検出光学装置。
- 請求項1に記載の半導体放射・検出光学装置であって、前記サンプル又は他のエレメントから受光した光は、電気的性質に影響を与えると共に電流−電圧特性を改変し、前記監視手段が前記電流−電圧特性を監視するようになっている半導体放射・検出光学装置。
- 請求項1に記載の半導体放射・検出光学装置であって、光放射エレメントと光検出エレメントとから成り、前記2つのエレメントは、共に、前記基板に一体化されている半導体放射・検出光学装置。
- 請求項3に記載の半導体放射・検出光学装置であって、前記光放射エレメント及び/又は前記光検出エレメントは、LED又はレーザのいずれかの形態の共振空洞エレメントから成っている半導体放射・検出光学装置。
- 請求項3又は4に記載の半導体放射・検出光学装置であって、前記光検出エレメントは、前記光放射エレメントから放射される光とは異なる波長の光を検出するようになっている半導体放射・検出光学装置。
- 請求項5に記載の半導体放射・検出光学装置であって、前記光検出エレメントは、前記異なった波長の光に優先的に反応するようにし、また前記光放射エレメントが放射する波長の光に相対的に反応しない半導体放射・検出光学装置。
- 請求項6に記載の半導体放射・検出光学装置であって、前記光検出エレメントは、受光面又はその付近に波長選択フィルタ層を備えている半導体放射・検出光学装置。
- 請求項7に記載の半導体放射・検出光学装置であって、前記光検出エレメントは、共振空胴から成っており、前記フィルタ層は、前記光検出エレメントの上方反射器に設けられている半導体放射・検出光学装置。
- 請求項8に記載の半導体放射・検出光学装置であって、前記半導体基板は、上下の反射器の間に設けられた前記共振空胴から成り、前記上方反射器がある領域は、前記光放射エレメントを形成するように除かれ、前記基板の他の領域は、前記光検出エレメントを形成し、且つ前記上方反射器に前記フィルタ層を含む半導体放射・検出光学装置。
- 請求項3乃至9のいずれかに記載の半導体放射・検出光学装置であって、前記前記光検出エレメントは、逆バイアスをかけるように配置されたダイオードから成り、前記ダイオードは、使用時に、なだれ的な光検出が生ずるように破壊点付近に配置される半導体放射・検出光学装置。
- 請求項1に記載の半導体放射・検出光学装置であって、共振空胴光放射器を備え、前記共振空胴光放射器は、その光放射面上に配置されて結合空胴システムを形成する二次光共振器を有し、前記二次光共振器は、サンプル用の室又は流動ダクトを含む半導体放射・検出光学装置。
- 請求項1に記載の半導体放射・検出光学装置であって、前記吸収層は、前記基板のドーピング処理されていない半導体領域に配置されている半導体放射・検出光学装置。
- 請求項12に記載の半導体放射・検出光学装置であって、前記吸収層は、光が放射される前記反射器を形成する高低交互の屈折率材料の2つの群の間に配置されている半導体放射・検出光学装置。
- 請求項1乃至13のいずれかに記載の半導体放射・検出光学装置であって、前記共通の基板に一体化された光放射・検出器群から成り、前記光放射・検出器群は、相互に独立して動作するように配置され、前記監視手段は、各光放射・検出器毎に他の光放射・検出器とは独立してその特性を監視するように配置されている半導体放射・検出光学装置。
- 請求項14に記載の半導体放射・検出光学装置であって、前記光放射・検出器は、直線的に配列されている半導体放射・検出光学装置。
- 請求項14に記載の半導体放射・検出光学装置であって、前記前記光放射・検出器は、二次元的に配列されている半導体放射・検出光学装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0224503A GB0224503D0 (en) | 2002-10-22 | 2002-10-22 | Semiconductor optical devices |
GB0300434A GB0300434D0 (en) | 2003-01-09 | 2003-01-09 | Semiconductor optical devices |
PCT/GB2003/004558 WO2004038813A2 (en) | 2002-10-22 | 2003-10-22 | Semiconductor optical devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006504111A JP2006504111A (ja) | 2006-02-02 |
JP4574547B2 true JP4574547B2 (ja) | 2010-11-04 |
Family
ID=32178873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005501545A Expired - Fee Related JP4574547B2 (ja) | 2002-10-22 | 2003-10-22 | 半導体光学装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7504665B2 (ja) |
EP (1) | EP1554761A2 (ja) |
JP (1) | JP4574547B2 (ja) |
AU (1) | AU2003274357B2 (ja) |
CA (1) | CA2503348A1 (ja) |
NZ (1) | NZ539566A (ja) |
WO (1) | WO2004038813A2 (ja) |
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US7564066B2 (en) * | 2005-11-09 | 2009-07-21 | Intel Corporation | Multi-chip assembly with optically coupled die |
JP2008039655A (ja) * | 2006-08-09 | 2008-02-21 | National Institute Of Advanced Industrial & Technology | 微小対象物放出光検出装置 |
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DE10004398A1 (de) * | 2000-02-02 | 2001-08-16 | Infineon Technologies Ag | VCSEL mit monolithisch integriertem Photodetektor |
CN1311436A (zh) * | 2000-03-01 | 2001-09-05 | 上海和泰光电科技有限公司 | 旋转平台上的生物芯片荧光图象的读取 |
JP2002100829A (ja) * | 2000-09-26 | 2002-04-05 | Canon Inc | 半導体発光受光装置、およびその作製方法 |
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2003
- 2003-10-22 WO PCT/GB2003/004558 patent/WO2004038813A2/en active Application Filing
- 2003-10-22 AU AU2003274357A patent/AU2003274357B2/en not_active Ceased
- 2003-10-22 CA CA002503348A patent/CA2503348A1/en not_active Abandoned
- 2003-10-22 NZ NZ539566A patent/NZ539566A/en active IP Right Revival
- 2003-10-22 US US10/532,363 patent/US7504665B2/en not_active Expired - Fee Related
- 2003-10-22 JP JP2005501545A patent/JP4574547B2/ja not_active Expired - Fee Related
- 2003-10-22 EP EP03758342A patent/EP1554761A2/en not_active Withdrawn
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NZ539566A (en) | 2007-01-26 |
JP2006504111A (ja) | 2006-02-02 |
US7504665B2 (en) | 2009-03-17 |
WO2004038813A3 (en) | 2005-01-20 |
CA2503348A1 (en) | 2004-05-06 |
AU2003274357A1 (en) | 2004-05-13 |
AU2003274357B2 (en) | 2009-07-30 |
WO2004038813A2 (en) | 2004-05-06 |
US20060138434A1 (en) | 2006-06-29 |
EP1554761A2 (en) | 2005-07-20 |
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