JP4574302B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4574302B2 JP4574302B2 JP2004267800A JP2004267800A JP4574302B2 JP 4574302 B2 JP4574302 B2 JP 4574302B2 JP 2004267800 A JP2004267800 A JP 2004267800A JP 2004267800 A JP2004267800 A JP 2004267800A JP 4574302 B2 JP4574302 B2 JP 4574302B2
- Authority
- JP
- Japan
- Prior art keywords
- probe
- wafer
- cleaning
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004267800A JP4574302B2 (ja) | 2004-09-15 | 2004-09-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004267800A JP4574302B2 (ja) | 2004-09-15 | 2004-09-15 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006086244A JP2006086244A (ja) | 2006-03-30 |
| JP2006086244A5 JP2006086244A5 (https=) | 2007-10-25 |
| JP4574302B2 true JP4574302B2 (ja) | 2010-11-04 |
Family
ID=36164508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004267800A Expired - Fee Related JP4574302B2 (ja) | 2004-09-15 | 2004-09-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4574302B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009115720A (ja) * | 2007-11-08 | 2009-05-28 | Japan Electronic Materials Corp | プローブのクリーニング方法およびプローブのクリーニング装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840836A (ja) * | 1981-09-03 | 1983-03-09 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH0442944A (ja) * | 1990-06-06 | 1992-02-13 | Matsushita Electron Corp | 半導体装置 |
| JP2004228314A (ja) * | 2003-01-22 | 2004-08-12 | Renesas Technology Corp | パッドを有する半導体装置 |
-
2004
- 2004-09-15 JP JP2004267800A patent/JP4574302B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006086244A (ja) | 2006-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7168163B2 (en) | Full wafer silicon probe card for burn-in and testing and test system including same | |
| CN1612322B (zh) | 半导体集成电路器件的制造方法 | |
| CN1612321A (zh) | 半导体集成电路器件的制造方法 | |
| US7223616B2 (en) | Test structures in unused areas of semiconductor integrated circuits and methods for designing the same | |
| JP4372785B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2005277338A (ja) | 半導体装置及びその検査方法 | |
| JP2001091544A (ja) | 半導体検査装置の製造方法 | |
| JP5696624B2 (ja) | 半導体試験治具 | |
| JP7299952B2 (ja) | 半導体ユニットのテスト方法 | |
| JP4574302B2 (ja) | 半導体装置の製造方法 | |
| JP2010267689A (ja) | 半導体集積回路装置の製造方法 | |
| JP5065674B2 (ja) | 半導体集積回路装置の製造方法 | |
| US6972202B2 (en) | Method of manufacturing and testing a semiconductor device | |
| JP4830772B2 (ja) | 半導体チップの検査方法 | |
| JP4052966B2 (ja) | ウェハ検査装置およびその検査方法 | |
| JP2007003252A (ja) | プローブカードおよび半導体集積回路の試験方法 | |
| TWI253704B (en) | Particle-removing wafer | |
| CN108695182B (zh) | 缺陷检测机台检测精度的校验方法及产品晶圆 | |
| JP2010098046A (ja) | プローブカードおよび半導体装置の製造方法 | |
| JP2002141474A (ja) | プレーナ型半導体チップとそのテスト方法並びに半導体ウエハ | |
| JP2010278073A (ja) | 半導体集積回路、半導体集積回路の検査装置、及び検査方法 | |
| JPH06216207A (ja) | ウエーハの検査方法 | |
| JP2003332399A (ja) | 絶縁膜の評価方法及び評価装置 | |
| US20260076152A1 (en) | Semiconductor structures having backside metal die damage rings and methods for manufacturing and testing thereof | |
| JP2000040717A (ja) | Tabテープおよびtabテープの電気的特性測定試験方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070910 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070910 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100218 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100528 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100803 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100818 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130827 Year of fee payment: 3 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |