JP4562868B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4562868B2
JP4562868B2 JP2000195163A JP2000195163A JP4562868B2 JP 4562868 B2 JP4562868 B2 JP 4562868B2 JP 2000195163 A JP2000195163 A JP 2000195163A JP 2000195163 A JP2000195163 A JP 2000195163A JP 4562868 B2 JP4562868 B2 JP 4562868B2
Authority
JP
Japan
Prior art keywords
impurity
film
region
semiconductor
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000195163A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002016116A (ja
JP2002016116A5 (enrdf_load_stackoverflow
Inventor
敦生 磯部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000195163A priority Critical patent/JP4562868B2/ja
Publication of JP2002016116A publication Critical patent/JP2002016116A/ja
Publication of JP2002016116A5 publication Critical patent/JP2002016116A5/ja
Application granted granted Critical
Publication of JP4562868B2 publication Critical patent/JP4562868B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000195163A 2000-06-28 2000-06-28 半導体装置の作製方法 Expired - Fee Related JP4562868B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000195163A JP4562868B2 (ja) 2000-06-28 2000-06-28 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000195163A JP4562868B2 (ja) 2000-06-28 2000-06-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002016116A JP2002016116A (ja) 2002-01-18
JP2002016116A5 JP2002016116A5 (enrdf_load_stackoverflow) 2007-07-05
JP4562868B2 true JP4562868B2 (ja) 2010-10-13

Family

ID=18693866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000195163A Expired - Fee Related JP4562868B2 (ja) 2000-06-28 2000-06-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4562868B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4641717B2 (ja) * 2002-12-16 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の評価方法及び素子基板
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204244A (ja) * 1992-12-28 1994-07-22 Sony Corp 半導体装置の製造方法
JP3146113B2 (ja) * 1994-08-30 2001-03-12 シャープ株式会社 薄膜トランジスタの製造方法および液晶表示装置
JP3998765B2 (ja) * 1997-09-04 2007-10-31 シャープ株式会社 多結晶半導体層の製造方法及び半導体装置の評価方法
US6151119A (en) * 1997-12-19 2000-11-21 Advanced Micro Devices Apparatus and method for determining depth profile characteristics of a dopant material in a semiconductor device
JP3658213B2 (ja) * 1998-11-19 2005-06-08 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2002016116A (ja) 2002-01-18

Similar Documents

Publication Publication Date Title
JP4798907B2 (ja) 半導体装置
US9576981B2 (en) Semiconductor device having a gate insulting film with thick portions aligned with a tapered gate electrode
US8704233B2 (en) Semiconductor device and method of manufacturing the same
JP4801790B2 (ja) 半導体装置
JPH11112002A (ja) 半導体装置およびその製造方法
JPH11261075A (ja) 半導体装置およびその作製方法
JP4562868B2 (ja) 半導体装置の作製方法
JP4583654B2 (ja) 半導体装置の作製方法
JP4641586B2 (ja) 半導体装置の作製方法
JP5046445B2 (ja) 半導体装置の作製方法
JP4700159B2 (ja) 半導体装置の作製方法
JP5760102B2 (ja) 表示装置
JP5153921B2 (ja) 表示装置、及び携帯情報端末
JP5030341B2 (ja) 半導体装置
JP5386626B2 (ja) 表示装置
JP5685633B2 (ja) 表示装置
JP2002016257A (ja) 半導体装置およびその作製方法
JP2013200574A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091019

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100727

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100728

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130806

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130806

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees