JP4560500B2 - スラブの寿命検出方法 - Google Patents

スラブの寿命検出方法 Download PDF

Info

Publication number
JP4560500B2
JP4560500B2 JP2006217327A JP2006217327A JP4560500B2 JP 4560500 B2 JP4560500 B2 JP 4560500B2 JP 2006217327 A JP2006217327 A JP 2006217327A JP 2006217327 A JP2006217327 A JP 2006217327A JP 4560500 B2 JP4560500 B2 JP 4560500B2
Authority
JP
Japan
Prior art keywords
target
warning
value
slab
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006217327A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007092171A (ja
Inventor
義理 蕭
振華 余
青蓉 汪
呈鏘 許
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/427,602 external-priority patent/US8795486B2/en
Priority claimed from US11/427,618 external-priority patent/US7891536B2/en
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of JP2007092171A publication Critical patent/JP2007092171A/ja
Application granted granted Critical
Publication of JP4560500B2 publication Critical patent/JP4560500B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Safety Devices In Control Systems (AREA)
JP2006217327A 2005-09-26 2006-08-09 スラブの寿命検出方法 Active JP4560500B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US72039005P 2005-09-26 2005-09-26
US72872405P 2005-10-20 2005-10-20
US73638905P 2005-11-14 2005-11-14
US11/427,602 US8795486B2 (en) 2005-09-26 2006-06-29 PVD target with end of service life detection capability
US11/427,618 US7891536B2 (en) 2005-09-26 2006-06-29 PVD target with end of service life detection capability

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010104537A Division JP5258834B2 (ja) 2005-09-26 2010-04-28 スラブの寿命検出方法およびそのシステム

Publications (2)

Publication Number Publication Date
JP2007092171A JP2007092171A (ja) 2007-04-12
JP4560500B2 true JP4560500B2 (ja) 2010-10-13

Family

ID=37978210

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006217327A Active JP4560500B2 (ja) 2005-09-26 2006-08-09 スラブの寿命検出方法
JP2010104537A Active JP5258834B2 (ja) 2005-09-26 2010-04-28 スラブの寿命検出方法およびそのシステム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010104537A Active JP5258834B2 (ja) 2005-09-26 2010-04-28 スラブの寿命検出方法およびそのシステム

Country Status (3)

Country Link
JP (2) JP4560500B2 (zh)
KR (1) KR100835273B1 (zh)
TW (1) TWI337301B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5350162B2 (ja) * 2009-09-30 2013-11-27 株式会社ダイヘン インピーダンス整合装置
US11754691B2 (en) 2019-09-27 2023-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Target measurement device and method for measuring a target

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169377A (ja) * 1986-12-23 1988-07-13 バルツェルス　アクチェンゲゼルシャフト 陰極スパッタリングを実行する方法および陰極スパッタリング用の噴霧化装置
JPH08176808A (ja) * 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
JP2003099114A (ja) * 2001-09-21 2003-04-04 Olympus Optical Co Ltd メンテナンス一括管理装置
JP2004299134A (ja) * 2003-03-28 2004-10-28 Toshiba Mach Co Ltd 射出成形機における材料供給装置及び射出成形機

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169377A (ja) * 1986-12-23 1988-07-13 バルツェルス　アクチェンゲゼルシャフト 陰極スパッタリングを実行する方法および陰極スパッタリング用の噴霧化装置
JPH08176808A (ja) * 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
JP2003099114A (ja) * 2001-09-21 2003-04-04 Olympus Optical Co Ltd メンテナンス一括管理装置
JP2004299134A (ja) * 2003-03-28 2004-10-28 Toshiba Mach Co Ltd 射出成形機における材料供給装置及び射出成形機

Also Published As

Publication number Publication date
KR100835273B1 (ko) 2008-06-05
JP2010248631A (ja) 2010-11-04
KR20070034969A (ko) 2007-03-29
JP2007092171A (ja) 2007-04-12
JP5258834B2 (ja) 2013-08-07
TWI337301B (en) 2011-02-11
TW200715078A (en) 2007-04-16

Similar Documents

Publication Publication Date Title
US7842189B2 (en) Treatment device, treatment device consumable parts management method, treatment system, and treatment system consumable parts management method
US8133360B2 (en) Prediction and compensation of erosion in a magnetron sputtering target
TWI425208B (zh) 質量分析單元
US20070224709A1 (en) Plasma processing method and apparatus, control program and storage medium
US20070068796A1 (en) Method of using a target having end of service life detection capability
EP0622823A1 (en) Sputtering targets having life alarm function
US20110126397A1 (en) Pvd target with end of service life detection capability
JP2009245988A (ja) プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
JP4560500B2 (ja) スラブの寿命検出方法
JPH04311560A (ja) 真空アーク蒸着装置
JPS6039161A (ja) スパツタ・コーテイングを制御する方法及び装置
WO2023240682A1 (zh) 靶材原位监控方法、系统、计算机设备和存储介质
US8795486B2 (en) PVD target with end of service life detection capability
US20140183036A1 (en) In Situ Sputtering Target Measurement
JPH06340971A (ja) スパッタリングターゲットの浸食の検出方法およびその装置
US11823964B2 (en) Deposition system and method
JP7509926B2 (ja) イオンミリング装置
JP2002060935A (ja) ターゲットエロージョン計測を可能としたスパッタリング装置
JP2003105536A (ja) スパッタ装置
JP2006013364A (ja) プラズマ処理装置及びプラズマ処理方法
JPH11162851A (ja) 半導体装置の製造方法および半導体製造装置
JPH10306369A (ja) スパッタリングターゲットおよびそれを用いたオーバースパッタの検知方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091118

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100428

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100517

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100628

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100726

R150 Certificate of patent or registration of utility model

Ref document number: 4560500

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130730

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250