JP4549475B2 - 半導体装置、電子機器、および半導体装置の作製方法 - Google Patents

半導体装置、電子機器、および半導体装置の作製方法 Download PDF

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Publication number
JP4549475B2
JP4549475B2 JP2000033377A JP2000033377A JP4549475B2 JP 4549475 B2 JP4549475 B2 JP 4549475B2 JP 2000033377 A JP2000033377 A JP 2000033377A JP 2000033377 A JP2000033377 A JP 2000033377A JP 4549475 B2 JP4549475 B2 JP 4549475B2
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film
region
tft
pixel
insulating film
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Expired - Fee Related
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JP2000033377A
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Japanese (ja)
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JP2000299469A (ja
JP2000299469A5 (enExample
Inventor
舜平 山崎
智史 村上
潤 小山
幸夫 田中
英人 北角
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000033377A priority Critical patent/JP4549475B2/ja
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Publication of JP2000299469A5 publication Critical patent/JP2000299469A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000033377A 1999-02-12 2000-02-10 半導体装置、電子機器、および半導体装置の作製方法 Expired - Fee Related JP4549475B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000033377A JP4549475B2 (ja) 1999-02-12 2000-02-10 半導体装置、電子機器、および半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-33623 1999-02-12
JP3362399 1999-02-12
JP2000033377A JP4549475B2 (ja) 1999-02-12 2000-02-10 半導体装置、電子機器、および半導体装置の作製方法

Related Child Applications (1)

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JP2010119143A Division JP5132714B2 (ja) 1999-02-12 2010-05-25 透過型液晶表示装置、プロジェクター及びデジタルカメラ

Publications (3)

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JP2000299469A JP2000299469A (ja) 2000-10-24
JP2000299469A5 JP2000299469A5 (enExample) 2007-04-05
JP4549475B2 true JP4549475B2 (ja) 2010-09-22

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JP2000033377A Expired - Fee Related JP4549475B2 (ja) 1999-02-12 2000-02-10 半導体装置、電子機器、および半導体装置の作製方法

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Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583471B1 (en) 1999-06-02 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having first and second insulating films
US6580094B1 (en) 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
JP3643025B2 (ja) * 2000-10-20 2005-04-27 シャープ株式会社 アクティブマトリクス型表示装置およびその製造方法
US6664732B2 (en) 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2005100992A (ja) * 2000-10-26 2005-04-14 Semiconductor Energy Lab Co Ltd 発光装置
JP4954366B2 (ja) * 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4137454B2 (ja) * 2001-01-17 2008-08-20 株式会社半導体エネルギー研究所 発光装置、電子機器及び発光装置の作製方法
SG103846A1 (en) 2001-02-28 2004-05-26 Semiconductor Energy Lab A method of manufacturing a semiconductor device
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
JP4302347B2 (ja) * 2001-12-18 2009-07-22 シャープ株式会社 薄膜トランジスタ基板及びその製造方法
US6835954B2 (en) 2001-12-29 2004-12-28 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device
TWI255432B (en) * 2002-06-03 2006-05-21 Lg Philips Lcd Co Ltd Active matrix organic electroluminescent display device and fabricating method thereof
TWI220072B (en) 2003-02-19 2004-08-01 Toppoly Optoelectronics Corp TFT structure with LDD region and manufacturing process of the same
US7554260B2 (en) * 2004-07-09 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device provided with a conductive film connection between a wiring component and a metal electrode film
JP4675680B2 (ja) 2005-05-30 2011-04-27 シャープ株式会社 薄膜トランジスタ基板の製造方法
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20100327353A1 (en) * 2008-01-29 2010-12-30 Atsushi Shoji Semiconductor device and method for manufacturing the same
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2010050160A1 (ja) * 2008-10-27 2010-05-06 シャープ株式会社 半導体装置及びその製造方法
US8471973B2 (en) * 2009-06-12 2013-06-25 Au Optronics Corporation Pixel designs of improving the aperture ratio in an LCD
KR102007833B1 (ko) * 2013-04-30 2019-08-06 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판
US9680026B2 (en) 2013-09-13 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having gate electrode overlapping semiconductor film
CN104465702B (zh) * 2014-11-03 2019-12-10 深圳市华星光电技术有限公司 Amoled背板的制作方法
JP6725335B2 (ja) * 2016-06-20 2020-07-15 株式会社ジャパンディスプレイ 半導体装置
US11183595B2 (en) * 2019-11-22 2021-11-23 Sakai Display Products Corporation Thin film transistor, image display panel, and method for manufacturing thin film transistor
JP7404929B2 (ja) * 2020-02-26 2023-12-26 富士フイルムビジネスイノベーション株式会社 発光装置、光学装置及び計測装置
KR102763280B1 (ko) * 2020-11-09 2025-02-10 삼성디스플레이 주식회사 표시패널 및 이를 구비하는 표시장치
CN115128873B (zh) * 2021-03-29 2023-12-05 株式会社日本显示器 显示装置及显示装置的阵列基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326013B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09171196A (ja) * 1995-10-16 1997-06-30 Sharp Corp 液晶表示装置
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

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