JP4545745B2 - 半導体デバイスの洗浄方法、製造方法、及び半導体基板から加工残渣を除去する方法 - Google Patents
半導体デバイスの洗浄方法、製造方法、及び半導体基板から加工残渣を除去する方法 Download PDFInfo
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- JP4545745B2 JP4545745B2 JP2006518989A JP2006518989A JP4545745B2 JP 4545745 B2 JP4545745 B2 JP 4545745B2 JP 2006518989 A JP2006518989 A JP 2006518989A JP 2006518989 A JP2006518989 A JP 2006518989A JP 4545745 B2 JP4545745 B2 JP 4545745B2
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- 238000000034 method Methods 0.000 title claims description 52
- 238000004140 cleaning Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 45
- 239000000693 micelle Substances 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 28
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 27
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 13
- 235000006408 oxalic acid Nutrition 0.000 claims description 9
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 79
- 239000000203 mixture Substances 0.000 description 21
- 238000009472 formulation Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000002411 adverse Effects 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 125000000129 anionic group Chemical group 0.000 description 4
- 239000006184 cosolvent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- -1 hexadecyl (cetyl) trimethylammonium halide Chemical class 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- ABBQHOQBGMUPJH-UHFFFAOYSA-M Sodium salicylate Chemical compound [Na+].OC1=CC=CC=C1C([O-])=O ABBQHOQBGMUPJH-UHFFFAOYSA-M 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- OUUIIDVPIFIYMC-UHFFFAOYSA-M [Na+].CCCCCCCCCCCC(O)=O.CCCCCCCCCCCC([O-])=O Chemical compound [Na+].CCCCCCCCCCCC(O)=O.CCCCCCCCCCCC([O-])=O OUUIIDVPIFIYMC-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229960004025 sodium salicylate Drugs 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 239000003760 tallow Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Description
Deer Clean(登録商標):Kanto Corporation社(オレゴン州ポートランド)から市販されている3%シュウ酸溶液。
CF3CF2CF2CF2CF2CF2CH2CH2SO3X、
ここで、X=HまたはNH4。
(RfCH2CH2O)aPO(ONH2(CH2CH2OH)2)b、
ここで、a+b=3、およびRf=F(CF2CF2)n、但しn=3。
上記材料は、CMCに近い低い濃度で使用される。これらの材料のミセル溶液は、界面活性剤の濃度を適当に修正することにより入手できる在庫製品から調製することができる。
シュウ酸:3%シュウ酸の水溶液。
FSB:Zonyl(登録商標)FSB;DuPont社から市販されているフルオロ界面活性剤。
比較例1
この例は、ベースライン・プロセス(すなわち、エッチング後バイアを洗浄しないプロセス)中、バイア内のエッチング後の残渣の存在が生産歩留まりにどのような悪影響を与えるのかを示す。
例1〜5
これらの例は、ミセル洗浄溶液を使用した場合の接触抵抗および歩留まりの可能な改善を示す。
例6〜10
これらの例は、大型バイア構造を含むダイにミセル洗浄溶液を使用した場合の接触抵抗および歩留まりの可能な改善を示す。
比較例3〜5
この例は、ベースライン・プロセス(すなわち、バイアを洗浄しないプロセス)中、バイア内のエッチング後の残渣の存在が、比較的多数のバイアを有するウェーハの生産歩留まりにどのような悪影響を与えるのかを示す。
例11〜21
これらの例は、多数のバイアを有するウェーハにミセル洗浄溶液を使用した場合の接触抵抗およびバイア・チェーン歩留まりの可能な改善を示す。
結果が示すように、ある種のミセル溶液を使用すると、バイア・チェーン歩留まりが劇的に増大する。例11〜13のミセル溶液は、特に効果があり、ベースライン・プロセスの歩留まりより遥かに高い、約90〜96%のバイア・チェーン歩留まりを示したことが分かる。例14〜15のミセル溶液も、バイア・チェーン歩留まりを劇的に改善した(70〜78%)。
Claims (5)
- 半導体デバイスを洗浄するための方法であって、
バルク誘電率(K)が3.0未満の低K構造を備える半導体デバイスを提供するステップであって、前記低K構造の表面に有機金属加工残渣を有しているステップと、
前記半導体デバイスにミセル溶液を塗布して前記残渣を除去するステップとを含み、
前記ミセル溶液は、0.01重量%〜1重量%の界面活性剤、1重量%〜10重量%のクエン酸、及び1重量%〜10重量%のシュウ酸を含む方法。 - 半導体基板から加工残渣を除去するための方法であって、
バルク誘電率(K)が3.0未満であり、かつ複数の開口部を有する半導体基板を提供するステップであって、前記開口部はその表面上に堆積している加工残渣を有しているステップと、
前記基板にミセル溶液を塗布し、それにより前記複数の開口部から前記加工残渣の少なくとも一部を除去するステップとを含み、
前記ミセル溶液は、0.01重量%〜1重量%の炭化水素界面活性剤、1重量%〜10重量%のクエン酸、及び1重量%〜10重量%のシュウ酸を含む、方法。 - 前記加工残渣の少なくとも一部が、前記開口部のエッチング中に形成される請求項2に記載の方法。
- 半導体デバイスを製造するための方法であって、
バルク誘電率(K)が3.0未満の半導体基板を提供するステップと、
前記半導体基板内に複数の開口部をエッチングするステップであって、前記エッチングが終了した場合、前記開口部のうちの少なくともいくつかが、その表面上に堆積している前記エッチング・プロセス中に形成された有機金属加工残渣を有するステップと、
前記加工残渣をミセル溶液と接触させることにより、前記加工残渣の少なくとも一部を除去するステップとを含み、
前記ミセル溶液は、0.01重量%〜1重量%の炭化水素界面活性剤、1重量%〜10重量%のクエン酸、及び1重量%〜10重量%のシュウ酸を含む、方法。 - 前記ミセル溶液が、1重量%〜10重量%のエチレン・グリコール・モノブチル・エーテル(EGMBE)を含む請求項4に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/618,228 US7018939B2 (en) | 2003-07-11 | 2003-07-11 | Micellar technology for post-etch residues |
PCT/US2004/022733 WO2005008739A2 (en) | 2003-07-11 | 2004-07-07 | Micellar technology for post-etch residues |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007535122A JP2007535122A (ja) | 2007-11-29 |
JP4545745B2 true JP4545745B2 (ja) | 2010-09-15 |
Family
ID=33565094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006518989A Expired - Fee Related JP4545745B2 (ja) | 2003-07-11 | 2004-07-07 | 半導体デバイスの洗浄方法、製造方法、及び半導体基板から加工残渣を除去する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7018939B2 (ja) |
EP (1) | EP1647048A2 (ja) |
JP (1) | JP4545745B2 (ja) |
KR (1) | KR20060034699A (ja) |
CN (1) | CN100424829C (ja) |
TW (1) | TWI353018B (ja) |
WO (1) | WO2005008739A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2006125461A1 (en) * | 2005-05-25 | 2006-11-30 | Freescale Semiconductor, Inc | Treatment solution and method of applying a passivating layer |
EP1913628A1 (en) * | 2005-08-05 | 2008-04-23 | Freescale Semiconductor, Inc. | Pore sealing and cleaning porous low dielectric constant structures |
US7923425B2 (en) * | 2006-08-21 | 2011-04-12 | Henkel Ag & Co. Kgaa | Low-foaming, acidic low-temperature cleaner and process for cleaning surfaces |
US7977037B2 (en) * | 2006-08-24 | 2011-07-12 | Micron Technology, Inc. | Photoresist processing methods |
US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
US20080149591A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
SG173429A1 (en) * | 2009-05-29 | 2011-09-29 | Mitsui Chemicals Inc | Composition for sealing semiconductor, semiconductor device, and process for manufacturing semiconductor device |
WO2024118789A1 (en) * | 2022-11-29 | 2024-06-06 | Applied Materials, Inc. | Oxidation conformality improvement with in-situ integrated processing |
Family Cites Families (22)
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US5038249A (en) * | 1987-02-20 | 1991-08-06 | Colgate-Palmolive Co. | Nonisotropic solution polarizable material and electrical components produced therefrom |
US5245512A (en) * | 1987-02-20 | 1993-09-14 | Colgate-Palmolive Company | Nonisotropic solution polarizable material and electrical components produced therefrom |
US5133955A (en) * | 1988-12-22 | 1992-07-28 | Arizona Technology Development Corporation | Low temperature preparation of ultrafine oxide particles using organized reaction media |
WO1993014022A1 (en) * | 1992-01-15 | 1993-07-22 | Battelle Memorial Institute | Process of forming metal compounds using reverse micelle or reverse microemulsion systems |
US5252245A (en) * | 1992-02-07 | 1993-10-12 | The Clorox Company | Reduced residue hard surface cleaner |
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US6103627A (en) * | 1996-02-21 | 2000-08-15 | Micron Technology, Inc. | Treatment of a surface having an exposed silicon/silica interface |
JPH09321250A (ja) * | 1996-06-03 | 1997-12-12 | Mitsubishi Electric Corp | 半導体装置の製造方法およびその製造装置 |
US6177356B1 (en) * | 1997-06-05 | 2001-01-23 | Sizary Ltd. | Semiconductor cleaning apparatus |
AU7796598A (en) * | 1997-06-06 | 1998-12-21 | Colgate-Palmolive Company, The | Microemulsion all purpose liquid cleaning compositions |
DE69941088D1 (de) * | 1998-05-18 | 2009-08-20 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
US6036886A (en) * | 1998-07-29 | 2000-03-14 | Nanocrystals Technology L.P. | Microemulsion method for producing activated metal oxide nanocrystals |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
US6268330B1 (en) * | 1999-05-21 | 2001-07-31 | Colgate-Palmolive Company | Clear microemulsion acidic light duty liquid cleaning compositions |
TW593674B (en) * | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US6346508B1 (en) * | 2000-02-11 | 2002-02-12 | Colgate-Palmolive Company | Acidic all purpose liquid cleaning compositions |
DE60108286T2 (de) * | 2000-03-27 | 2005-12-29 | Shipley Co., L.L.C., Marlborough | Entfernungsmittel für Polymer |
JP2002069495A (ja) * | 2000-06-16 | 2002-03-08 | Kao Corp | 洗浄剤組成物 |
US6641678B2 (en) * | 2001-02-15 | 2003-11-04 | Micell Technologies, Inc. | Methods for cleaning microelectronic structures with aqueous carbon dioxide systems |
JP2003179011A (ja) * | 2001-12-10 | 2003-06-27 | Asahi Kasei Corp | 半導体基板の製造方法 |
FR2842755B1 (fr) * | 2002-07-23 | 2005-02-18 | Soitec Silicon On Insulator | Rincage au moyen d'une solution de tensioactif apres planarisation mecano-chimique d'une tranche |
-
2003
- 2003-07-11 US US10/618,228 patent/US7018939B2/en not_active Expired - Lifetime
-
2004
- 2004-07-07 JP JP2006518989A patent/JP4545745B2/ja not_active Expired - Fee Related
- 2004-07-07 CN CNB2004800200021A patent/CN100424829C/zh not_active Expired - Fee Related
- 2004-07-07 KR KR1020067000717A patent/KR20060034699A/ko not_active Application Discontinuation
- 2004-07-07 WO PCT/US2004/022733 patent/WO2005008739A2/en active Application Filing
- 2004-07-07 EP EP04778309A patent/EP1647048A2/en not_active Withdrawn
- 2004-07-12 TW TW093120848A patent/TWI353018B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200511425A (en) | 2005-03-16 |
CN1823401A (zh) | 2006-08-23 |
WO2005008739A2 (en) | 2005-01-27 |
US7018939B2 (en) | 2006-03-28 |
WO2005008739A3 (en) | 2005-07-21 |
JP2007535122A (ja) | 2007-11-29 |
TWI353018B (en) | 2011-11-21 |
EP1647048A2 (en) | 2006-04-19 |
CN100424829C (zh) | 2008-10-08 |
US20050009359A1 (en) | 2005-01-13 |
KR20060034699A (ko) | 2006-04-24 |
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