JP4543069B2 - マスクレス露光装置 - Google Patents

マスクレス露光装置 Download PDF

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Publication number
JP4543069B2
JP4543069B2 JP2007249885A JP2007249885A JP4543069B2 JP 4543069 B2 JP4543069 B2 JP 4543069B2 JP 2007249885 A JP2007249885 A JP 2007249885A JP 2007249885 A JP2007249885 A JP 2007249885A JP 4543069 B2 JP4543069 B2 JP 4543069B2
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JP
Japan
Prior art keywords
projection lens
exposure
substrate
wedge glass
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007249885A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009080324A (ja
Inventor
良忠 押田
和夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Via Mechanics Ltd
Original Assignee
Hitachi Via Mechanics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Via Mechanics Ltd filed Critical Hitachi Via Mechanics Ltd
Priority to JP2007249885A priority Critical patent/JP4543069B2/ja
Priority to TW097128953A priority patent/TWI443473B/zh
Priority to KR1020080078837A priority patent/KR101516607B1/ko
Priority to CN2008101449489A priority patent/CN101398631B/zh
Priority to DE102008038443.7A priority patent/DE102008038443B4/de
Publication of JP2009080324A publication Critical patent/JP2009080324A/ja
Application granted granted Critical
Publication of JP4543069B2 publication Critical patent/JP4543069B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007249885A 2007-09-26 2007-09-26 マスクレス露光装置 Active JP4543069B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007249885A JP4543069B2 (ja) 2007-09-26 2007-09-26 マスクレス露光装置
TW097128953A TWI443473B (zh) 2007-09-26 2008-07-31 No mask exposure device
KR1020080078837A KR101516607B1 (ko) 2007-09-26 2008-08-12 마스크레스 노광 장치
CN2008101449489A CN101398631B (zh) 2007-09-26 2008-08-13 无掩模曝光装置
DE102008038443.7A DE102008038443B4 (de) 2007-09-26 2008-08-20 Maskenloser Belichtungsapparat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007249885A JP4543069B2 (ja) 2007-09-26 2007-09-26 マスクレス露光装置

Publications (2)

Publication Number Publication Date
JP2009080324A JP2009080324A (ja) 2009-04-16
JP4543069B2 true JP4543069B2 (ja) 2010-09-15

Family

ID=40384579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007249885A Active JP4543069B2 (ja) 2007-09-26 2007-09-26 マスクレス露光装置

Country Status (5)

Country Link
JP (1) JP4543069B2 (ko)
KR (1) KR101516607B1 (ko)
CN (1) CN101398631B (ko)
DE (1) DE102008038443B4 (ko)
TW (1) TWI443473B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5354803B2 (ja) * 2010-06-28 2013-11-27 株式会社ブイ・テクノロジー 露光装置
CN105549337A (zh) * 2016-02-03 2016-05-04 京东方科技集团股份有限公司 一种光刻装置及光刻方法、显示基板的制作方法
KR102197572B1 (ko) * 2016-07-13 2020-12-31 어플라이드 머티어리얼스, 인코포레이티드 조명 소스로서의 마이크로 led 어레이
JP2019045836A (ja) * 2017-09-01 2019-03-22 株式会社アドテックエンジニアリング 直接描画露光装置
KR20190054815A (ko) 2017-11-14 2019-05-22 삼성전자주식회사 마스크리스 노광 방법, 마스크리스 노광 장치 및 이를 이용한 반도체 장치의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004163798A (ja) * 2002-11-15 2004-06-10 Fuji Photo Film Co Ltd 露光装置
JP2005266779A (ja) * 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法
JP2006030791A (ja) * 2004-07-20 2006-02-02 Fuji Photo Film Co Ltd 光学装置
JP2007025005A (ja) * 2005-07-12 2007-02-01 Fujifilm Holdings Corp セル内構造の製造方法及びセル内構造並びに表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3139023B2 (ja) * 1991-01-30 2001-02-26 株式会社日立製作所 電子線装置及び電子線装置の焦点調整方法
US5209813A (en) 1990-10-24 1993-05-11 Hitachi, Ltd. Lithographic apparatus and method
JP4546019B2 (ja) 2002-07-03 2010-09-15 株式会社日立製作所 露光装置
JP4244156B2 (ja) 2003-05-07 2009-03-25 富士フイルム株式会社 投影露光装置
US7061591B2 (en) * 2003-05-30 2006-06-13 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US7197828B2 (en) 2005-05-31 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing FPD chuck Z position measurement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004163798A (ja) * 2002-11-15 2004-06-10 Fuji Photo Film Co Ltd 露光装置
JP2005266779A (ja) * 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法
JP2006030791A (ja) * 2004-07-20 2006-02-02 Fuji Photo Film Co Ltd 光学装置
JP2007025005A (ja) * 2005-07-12 2007-02-01 Fujifilm Holdings Corp セル内構造の製造方法及びセル内構造並びに表示装置

Also Published As

Publication number Publication date
CN101398631B (zh) 2012-09-26
TW200915016A (en) 2009-04-01
TWI443473B (zh) 2014-07-01
DE102008038443B4 (de) 2023-07-27
KR101516607B1 (ko) 2015-04-30
JP2009080324A (ja) 2009-04-16
KR20090031977A (ko) 2009-03-31
DE102008038443A1 (de) 2009-04-02
CN101398631A (zh) 2009-04-01

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