JP4539869B2 - 配線基板の製造方法 - Google Patents
配線基板の製造方法 Download PDFInfo
- Publication number
- JP4539869B2 JP4539869B2 JP2006065987A JP2006065987A JP4539869B2 JP 4539869 B2 JP4539869 B2 JP 4539869B2 JP 2006065987 A JP2006065987 A JP 2006065987A JP 2006065987 A JP2006065987 A JP 2006065987A JP 4539869 B2 JP4539869 B2 JP 4539869B2
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- JP
- Japan
- Prior art keywords
- substrate
- solution
- wiring board
- layer
- catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0565—Resist used only for applying catalyst, not for plating itself
Description
めっきレジストを使用しないで金属を析出させる無電解めっき法により配線基板を製造する方法であって、
(a)パラジウム、過酸化水素および塩酸を含む触媒溶液に基板を浸漬することにより、当該基板上に触媒層を設ける工程と、
(b)無電解めっき液に前記基板を浸漬することにより、前記触媒層上に金属を析出させて金属層を設ける工程と、
を含む。
前記触媒溶液は、pH4.0〜pH6.9に調整されたものであることができる。
前記触媒溶液は、pH4.0〜pH5.0に調整されたものであることができる。
前記無電解めっき液は、pH4.1〜pH4.4に調整されたものであることができる。
前記無電解めっき液は、ニッケルを含むことができる。
めっきレジストを使用しないで金属を析出させる無電解めっき法により配線基板を製造する方法であって、
(a)触媒溶液に基板を浸漬することにより、当該基板上に触媒層を設ける工程と、
(b)pH4.1〜pH4.4に調整された無電解めっき液に前記基板を浸漬することにより、前記触媒層上に金属を析出させて金属層を設ける工程と、
を含むことができる。
前記無電解めっき液は、ニッケルを含むことができる。
前記工程(a)の前に、
前記基板上の所望の配線パターン以外の領域にレジスト層を設ける工程と、
界面活性剤を含む界面活性剤層を前記基板上に設ける工程と、
をさらに含み、
前記工程(a)の後に、
前記レジスト層を除去することにより、所望の配線パターン以外の領域の界面活性剤層および触媒層を除去する工程と、
を含むことができる。
パラジウム、過酸化水素および塩酸を含む混合水溶液からなる。
図1〜図8は、本実施の形態にかかる配線基板100(図8参照)の製造方法を示す図である。本実施の形態では、無電解めっきを適用して配線基板を製造する。
(4a)純度99.99%のパラジウムペレットを塩酸と過酸化水素水と水との混合溶液に溶解させ、パラジウム濃度が0.1〜0.5g/lの塩化パラジウム溶液とする。ここで塩酸と過酸化水素水と水の混合溶液は、水600mlに対し、35%塩酸を50ml〜200ml、30%過酸化水素水を50ml〜200ml添加したものであることが好ましい。
(4b)上述した塩化パラジウム溶液をさらに水と過酸化水素水で希釈することによりパラジウム濃度を0.01〜0.05g/lとする。ここで添加する水と過酸化水素水の混合比は、水250mlに対し、30%過酸化水素水5ml〜30mlであることが好ましい。
(4c)水酸化ナトリウム水溶液等を用いて、塩化パラジウム溶液のpHを4.0〜6.9、好ましくは4.0〜5.0に調整する。このように調整することにより、触媒層を形成するのに適した触媒溶液とすることができる。
図9は、本実施の形態にかかる配線基板の製造方法によって製造される配線基板を適用した電子デバイスの一例を示す。電子デバイス1000は、配線基板100と、集積回路チップ90と、他の基板92とを含む。
3.1.第1の実験例
本実施の形態にかかる配線基板の製造方法により配線基板を形成した。
本実施の形態にかかる配線基板の製造方法により配線基板を形成した。
第1の実験例では、パラジウム、過酸化水素および塩酸を含む触媒溶液を用いて触媒層とPH4.1〜4.4に調整した無電解めっき液を用いてニッケル層を形成した。これに対し、第2の実験例では、市販の触媒溶液を用いて触媒層を形成し、通常のPHのニッケル無電解めっき液を用いてニッケル層を形成した。第2の実験例で作製されたニッケル層の幅は約950nmであるため、線の端の部分が直線ではなく不規則でゆらいだ形状となり、また一部隣接部と接触している部分も確認された。
Claims (5)
- めっきレジストを使用しないで金属を析出させる無電解めっき法により配線基板を製造する方法であって、
(a)パラジウム、過酸化水素および塩酸を含む触媒溶液に基板を浸漬することにより、当該基板上に触媒層を設ける工程と、
(b)無電解めっき液に前記基板を浸漬することにより、前記触媒層上に金属を析出させて金属層を設ける工程と、
を含む、配線基板の製造方法。 - 請求項1において、
前記触媒溶液は、pH4.0〜pH6.9に調整されたものである、配線基板の製造方法。 - 請求項1において、
前記触媒溶液は、pH4.0〜pH5.0に調整されたものである、配線基板の製造方法。 - 請求項1ないし3のいずれかにおいて、
前記無電解めっき液は、pH4.1〜PH4.4に調整されたものである、配線基板の製造方法。 - 請求項3において、
前記無電解めっき液は、ニッケルを含む、配線基板の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006065987A JP4539869B2 (ja) | 2006-03-10 | 2006-03-10 | 配線基板の製造方法 |
US11/716,719 US20070218193A1 (en) | 2006-03-10 | 2007-03-09 | Method of manufacturing interconnect substrate |
CNA200710087314XA CN101035414A (zh) | 2006-03-10 | 2007-03-09 | 布线基板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006065987A JP4539869B2 (ja) | 2006-03-10 | 2006-03-10 | 配線基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007243033A JP2007243033A (ja) | 2007-09-20 |
JP4539869B2 true JP4539869B2 (ja) | 2010-09-08 |
Family
ID=38518163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006065987A Expired - Fee Related JP4539869B2 (ja) | 2006-03-10 | 2006-03-10 | 配線基板の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070218193A1 (ja) |
JP (1) | JP4539869B2 (ja) |
CN (1) | CN101035414A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110063127A (ko) * | 2009-12-04 | 2011-06-10 | 삼성전기주식회사 | 할로겐산을 포함하는 팔라듐 활성 억제액 및 이를 이용한 기판상 도금 불량 방지 방법 |
JP2014158010A (ja) * | 2013-01-15 | 2014-08-28 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
CN103866300A (zh) * | 2014-03-06 | 2014-06-18 | 东莞劲胜精密组件股份有限公司 | 非金属基材金属化方法 |
KR101921845B1 (ko) * | 2014-08-28 | 2018-11-23 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치의 제조 방법, 반도체 장치 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50137106A (ja) * | 1974-04-17 | 1975-10-31 | ||
JPH05106056A (ja) * | 1991-10-11 | 1993-04-27 | Okuno Seiyaku Kogyo Kk | 部分めつき方法 |
JPH07202382A (ja) * | 1994-01-07 | 1995-08-04 | Sumitomo Metal Ind Ltd | 導体層パターンの形成方法 |
JPH1075038A (ja) * | 1996-06-28 | 1998-03-17 | Ngk Spark Plug Co Ltd | 配線基板とその製造方法 |
JP2001172769A (ja) * | 1999-12-14 | 2001-06-26 | Matsushita Electric Ind Co Ltd | 無電解ニッケルめっき用還元性活性化処理液及びそれを用いたプリント配線板の製造方法 |
JP2001303148A (ja) * | 2000-04-20 | 2001-10-31 | Hitachi Chem Co Ltd | パラジウム含有排水の処理方法 |
JP2001323383A (ja) * | 2000-05-12 | 2001-11-22 | Okuno Chem Ind Co Ltd | 無電解めっき用触媒付与方法 |
JP2002180261A (ja) * | 2000-12-08 | 2002-06-26 | Nikko Metal Plating Kk | 無電解ニッケルめっき液 |
JP2003073842A (ja) * | 2001-08-27 | 2003-03-12 | Kyocera Corp | 無電解めっき用触媒液 |
JP2003147549A (ja) * | 2001-11-08 | 2003-05-21 | Nippon Parkerizing Co Ltd | 樹脂との耐熱接着性に優れたニッケル系表面処理皮膜 |
JP2005286138A (ja) * | 2004-03-30 | 2005-10-13 | Seiko Epson Corp | 配線基板の製造方法及び電子デバイスの製造方法 |
JP2005298899A (ja) * | 2004-04-12 | 2005-10-27 | Okuno Chem Ind Co Ltd | 樹脂成形体に対する無電解めっき用前処理方法 |
JP2006299366A (ja) * | 2005-04-22 | 2006-11-02 | Okuno Chem Ind Co Ltd | 樹脂成形体へのめっき方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3546009A (en) * | 1967-01-03 | 1970-12-08 | Kollmorgen Corp | Metallization of insulating substrates |
US3561995A (en) * | 1967-04-03 | 1971-02-09 | M & T Chemicals Inc | Method of activating a polymer surface and resultant article |
US3563784A (en) * | 1968-09-09 | 1971-02-16 | Macdermid Inc | Pre-activation treatment in the electroless plating of synthetic resin substrates |
US3672938A (en) * | 1969-02-20 | 1972-06-27 | Kollmorgen Corp | Novel precious metal sensitizing solutions |
US4865873A (en) * | 1986-09-15 | 1989-09-12 | General Electric Company | Electroless deposition employing laser-patterned masking layer |
-
2006
- 2006-03-10 JP JP2006065987A patent/JP4539869B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-09 CN CNA200710087314XA patent/CN101035414A/zh active Pending
- 2007-03-09 US US11/716,719 patent/US20070218193A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50137106A (ja) * | 1974-04-17 | 1975-10-31 | ||
JPH05106056A (ja) * | 1991-10-11 | 1993-04-27 | Okuno Seiyaku Kogyo Kk | 部分めつき方法 |
JPH07202382A (ja) * | 1994-01-07 | 1995-08-04 | Sumitomo Metal Ind Ltd | 導体層パターンの形成方法 |
JPH1075038A (ja) * | 1996-06-28 | 1998-03-17 | Ngk Spark Plug Co Ltd | 配線基板とその製造方法 |
JP2001172769A (ja) * | 1999-12-14 | 2001-06-26 | Matsushita Electric Ind Co Ltd | 無電解ニッケルめっき用還元性活性化処理液及びそれを用いたプリント配線板の製造方法 |
JP2001303148A (ja) * | 2000-04-20 | 2001-10-31 | Hitachi Chem Co Ltd | パラジウム含有排水の処理方法 |
JP2001323383A (ja) * | 2000-05-12 | 2001-11-22 | Okuno Chem Ind Co Ltd | 無電解めっき用触媒付与方法 |
JP2002180261A (ja) * | 2000-12-08 | 2002-06-26 | Nikko Metal Plating Kk | 無電解ニッケルめっき液 |
JP2003073842A (ja) * | 2001-08-27 | 2003-03-12 | Kyocera Corp | 無電解めっき用触媒液 |
JP2003147549A (ja) * | 2001-11-08 | 2003-05-21 | Nippon Parkerizing Co Ltd | 樹脂との耐熱接着性に優れたニッケル系表面処理皮膜 |
JP2005286138A (ja) * | 2004-03-30 | 2005-10-13 | Seiko Epson Corp | 配線基板の製造方法及び電子デバイスの製造方法 |
JP2005298899A (ja) * | 2004-04-12 | 2005-10-27 | Okuno Chem Ind Co Ltd | 樹脂成形体に対する無電解めっき用前処理方法 |
JP2006299366A (ja) * | 2005-04-22 | 2006-11-02 | Okuno Chem Ind Co Ltd | 樹脂成形体へのめっき方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070218193A1 (en) | 2007-09-20 |
JP2007243033A (ja) | 2007-09-20 |
CN101035414A (zh) | 2007-09-12 |
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