JP4538474B2 - インバータ装置 - Google Patents
インバータ装置 Download PDFInfo
- Publication number
- JP4538474B2 JP4538474B2 JP2007203754A JP2007203754A JP4538474B2 JP 4538474 B2 JP4538474 B2 JP 4538474B2 JP 2007203754 A JP2007203754 A JP 2007203754A JP 2007203754 A JP2007203754 A JP 2007203754A JP 4538474 B2 JP4538474 B2 JP 4538474B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- electrode side
- positive
- negative electrode
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Inverter Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007203754A JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007203754A JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003127641A Division JP4055643B2 (ja) | 2003-05-06 | 2003-05-06 | インバータ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008004953A JP2008004953A (ja) | 2008-01-10 |
| JP2008004953A5 JP2008004953A5 (enExample) | 2008-02-21 |
| JP4538474B2 true JP4538474B2 (ja) | 2010-09-08 |
Family
ID=39009032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007203754A Expired - Fee Related JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4538474B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5292823B2 (ja) * | 2008-01-22 | 2013-09-18 | 日産自動車株式会社 | 電力変換装置 |
| JP5352113B2 (ja) * | 2008-04-22 | 2013-11-27 | トヨタ自動車株式会社 | インバータモジュール |
| JP5184218B2 (ja) * | 2008-06-02 | 2013-04-17 | 本田技研工業株式会社 | コンデンサ搭載型インバータユニット |
| DE102009017621B3 (de) * | 2009-04-16 | 2010-08-19 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur Verringerung der Störabstrahlung in einem leistungselektronischen System |
| JP5289348B2 (ja) * | 2010-01-22 | 2013-09-11 | 三菱電機株式会社 | 車載用電力変換装置 |
| JP5652370B2 (ja) * | 2011-03-30 | 2015-01-14 | 株式会社デンソー | 電力変換装置 |
| WO2016027557A1 (ja) | 2014-08-22 | 2016-02-25 | 三菱電機株式会社 | 電力変換装置 |
| US10790758B2 (en) * | 2018-03-08 | 2020-09-29 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Power converter for electric vehicle drive systems |
| JP7279847B2 (ja) * | 2020-03-05 | 2023-05-23 | 富士電機株式会社 | 電力変換装置 |
| CN114551391A (zh) * | 2022-01-17 | 2022-05-27 | 致瞻科技(上海)有限公司 | 一种低电磁干扰的功率半导体模块的封装架构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171754A (ja) * | 1984-02-17 | 1985-09-05 | Sumitomo Electric Ind Ltd | 回路素子付半導体チツプキヤリア |
| JPH01108751A (ja) * | 1987-10-21 | 1989-04-26 | Nec Corp | 集積回路装置 |
| JPH1189248A (ja) * | 1997-09-02 | 1999-03-30 | Denso Corp | 電力制御装置 |
| EP1231639B1 (en) * | 2000-08-18 | 2008-10-22 | Mitsubishi Denki Kabushiki Kaisha | Power module |
| JP2003110090A (ja) * | 2001-07-09 | 2003-04-11 | Daikin Ind Ltd | パワーモジュールおよび空気調和機 |
-
2007
- 2007-08-06 JP JP2007203754A patent/JP4538474B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008004953A (ja) | 2008-01-10 |
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