JP4533984B2 - 加熱装置及びサセプタの温度を増加させる方法 - Google Patents

加熱装置及びサセプタの温度を増加させる方法 Download PDF

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Publication number
JP4533984B2
JP4533984B2 JP2000559058A JP2000559058A JP4533984B2 JP 4533984 B2 JP4533984 B2 JP 4533984B2 JP 2000559058 A JP2000559058 A JP 2000559058A JP 2000559058 A JP2000559058 A JP 2000559058A JP 4533984 B2 JP4533984 B2 JP 4533984B2
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temperature
heating
heating element
susceptor
value
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Japanese (ja)
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JP2003527738A (ja
JP2003527738A5 (enExample
Inventor
エマニュエル ビア，
デュオヤン シェン，
エイタン ゾハール，
マーク， エム． コールラック，
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エーケーティー株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Remote Sensing (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Control Of Temperature (AREA)
JP2000559058A 1998-07-13 1999-07-13 加熱装置及びサセプタの温度を増加させる方法 Expired - Lifetime JP4533984B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/115,112 1998-07-13
US09/115,112 US6225601B1 (en) 1998-07-13 1998-07-13 Heating a substrate support in a substrate handling chamber
PCT/US1999/015852 WO2000002824A1 (en) 1998-07-13 1999-07-13 Heating a substrate support in a substrate handling chamber

Publications (3)

Publication Number Publication Date
JP2003527738A JP2003527738A (ja) 2003-09-16
JP2003527738A5 JP2003527738A5 (enExample) 2006-01-05
JP4533984B2 true JP4533984B2 (ja) 2010-09-01

Family

ID=22359359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000559058A Expired - Lifetime JP4533984B2 (ja) 1998-07-13 1999-07-13 加熱装置及びサセプタの温度を増加させる方法

Country Status (7)

Country Link
US (1) US6225601B1 (enExample)
EP (1) EP1097111B1 (enExample)
JP (1) JP4533984B2 (enExample)
KR (1) KR100638414B1 (enExample)
DE (1) DE69906082T2 (enExample)
TW (1) TW538010B (enExample)
WO (1) WO2000002824A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6521046B2 (en) * 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002158178A (ja) * 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
JP4059694B2 (ja) * 2002-03-27 2008-03-12 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20110081137A1 (en) * 2009-10-06 2011-04-07 Advantest Corporation Manufacturing equipment and manufacturing method
JP2010283364A (ja) * 2010-07-15 2010-12-16 Sumitomo Electric Ind Ltd 半導体製造装置用保持体
JP5867255B2 (ja) * 2011-08-30 2016-02-24 株式会社デンソー 熱交換器、熱交換器ユニット、および熱交換器の取り付け方法
DE102013109155A1 (de) * 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法
CN108728828A (zh) * 2017-04-20 2018-11-02 中微半导体设备(上海)有限公司 Cvd设备及其温度控制方法与发热体
CN113091315B (zh) * 2021-03-24 2022-07-19 青岛海尔空调器有限总公司 暖风机控制方法、装置、暖风机和存储介质

Family Cites Families (24)

* Cited by examiner, † Cited by third party
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JPS5115835A (enExample) 1974-07-31 1976-02-07 Kokusai Electric Co Ltd
JPS62295418A (ja) * 1986-06-16 1987-12-22 Ushio Inc レジスト処理方法
US4886954A (en) 1988-04-15 1989-12-12 Thermco Systems, Inc. Hot wall diffusion furnace and method for operating the furnace
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JP2786571B2 (ja) * 1992-07-07 1998-08-13 日本碍子株式会社 半導体ウエハー加熱装置
US5352294A (en) 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
DE69424759T2 (de) 1993-12-28 2001-02-08 Applied Materials, Inc. Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren
EP0661732B1 (en) * 1993-12-28 2004-06-09 Applied Materials, Inc. A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JPH0845946A (ja) * 1994-08-01 1996-02-16 Hitachi Ltd シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
JPH097963A (ja) * 1995-06-19 1997-01-10 Kokusai Electric Co Ltd 電気炉のデータ処理方法
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH09134886A (ja) * 1995-11-08 1997-05-20 Kokusai Electric Co Ltd 半導体製造装置のランピング温度制御方法
JP3563224B2 (ja) 1996-03-25 2004-09-08 住友電気工業株式会社 半導体ウエハの評価方法、熱処理方法、および熱処理装置
US5653808A (en) 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
EP0823492A3 (en) * 1996-08-07 1999-01-20 Concept Systems Design Inc. Zone heating system with feedback control
DE69710655T2 (de) * 1996-08-07 2002-10-31 Concept Systems Design Inc Gaseinleitsystem für CVD Reaktoren
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
US5812403A (en) * 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers

Also Published As

Publication number Publication date
US6225601B1 (en) 2001-05-01
DE69906082T2 (de) 2004-02-19
JP2003527738A (ja) 2003-09-16
WO2000002824A1 (en) 2000-01-20
TW538010B (en) 2003-06-21
KR100638414B1 (ko) 2006-10-24
KR20010053512A (ko) 2001-06-25
EP1097111B1 (en) 2003-03-19
EP1097111A1 (en) 2001-05-09
DE69906082D1 (de) 2003-04-24

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