JP4527292B2 - Semiconductor power module - Google Patents

Semiconductor power module Download PDF

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JP4527292B2
JP4527292B2 JP2001000115A JP2001000115A JP4527292B2 JP 4527292 B2 JP4527292 B2 JP 4527292B2 JP 2001000115 A JP2001000115 A JP 2001000115A JP 2001000115 A JP2001000115 A JP 2001000115A JP 4527292 B2 JP4527292 B2 JP 4527292B2
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control circuit
control
main circuit
metal base
semiconductor power
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JP2002203940A (en
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典孝 為谷
博 吉田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Abstract

PROBLEM TO BE SOLVED: To overcome the problem of a prior art such that a semiconductor power module is expensive since an insulating board with excellent thermal conductivity is used even in a control circuit section, and hence the number of processes increases. SOLUTION: In this semiconductor power module for packaging a main circuit section for mounting a power element, and the control circuit section for mounting a control element that controls the power element, a control terminal for external connection at the control circuit section is inserted into a case, a control circuit pattern is formed at one portion of the control terminal for external connection, and the control element is mounted onto the control circuit pattern.

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体パワーモジュールに関する。
【０００２】
【従来の技術】
半導体パワーモジュールは、電力制御用の半導体素子であるパワー素子を含む主回路と、該主回路の動作を制御する半導体素子である制御素子を含む制御回路とを、一つの装置に組み込んだものである。主としてモータ等を制御するインバータ装置等に応用されている。
【０００３】
図５は、従来の半導体パワーモジュールの断面を示す模式図である。図において、１は金属ベース絶縁基板、２は金属ベース絶縁基板における後述の主回路配線パターン１１３上にハンダ付けにより接合されたＩＧＢＴ、フライホイールダイオード等のパワー素子、３は金属ベース絶縁基板における後述の制御回路パターン１１６上にハンダ付けにより接合された主回路を駆動する制御素子、５は制御回路パターン１１６上にハンダ付けにより接合された制御回路端子であり、夫々パワー素子２や制御素子３とアルミワイヤ６により接続されている。
【０００４】
また７はパワー素子２および制御素子３を囲撓するように金属ベース絶縁基板１上に配設され、かつ接着された外枠であり、金属ベース絶縁基板１と外枠７とにより、金属ベース絶縁基板１を底板とするケース８を形成している。９はパワー素子２および制御素子３を覆うようにケース８内に充填されたエポキシ樹脂であり、金属ベース絶縁基板１からエポキシ樹脂９により従来の半導体パワーモジュール１００を構成している。
【０００５】
次に図６により、半導体パワーモジュール１００における金属ベース絶縁基板１の構成を説明する。図において、１１１は熱伝導性に優れたアルミ材からなる金属ベース部板、１１２は金属ベース板１１１の上に配設された絶縁板、１１３は絶縁板１１２の上に貼り付けられた銅箔をエッチングして形成された主回路配線パターンであり、金属ベース板１１１、絶縁板１１２および主回路配線パターン１１３により、前述の主回路基板１１４を構成し、主回路配線パターン１１３は図５に示したように、パワー素子２や主回路端子４がハンダ付けにて接合される。
【０００６】
また１１５はガラス繊維を骨材としたエポキシ樹脂製の絶縁板(ガラスエポキシ基材)、１１６、１１７は、夫々絶縁板１１５の両主面に貼り付けられた、銅箔をエッチングして得られた制御回路配線パターンおよび制御回路接地用パターンである。なお、絶縁板１１５の所定の個所には貫通孔１１５ａを形成してその内面に銅メッキを施し、その銅メッキ層により、制御回路配線パターン１１６と制御回路接地パターン１１７と電気的に導通し、制御回路接地用パターン１１７が制御回路(図示せず)の共通接地用パターンとして機能している。
【０００７】
なお、絶縁板１１５、制御回路配線パターン１１６および制御回路接地用パターン１１７により、制御回路基板１１８を構成し、この制御回路基板１１８は絶縁板１１２の主回路配線パターン１１３が配設されていない一定の領域１１２ａに接着シート１１９を介して接合されている。そして、制御回路配線パターン１１６には図５に示したごとく、制御素子３や制御回路端子５がハンダ付けにより接合される。
【０００８】
図７は、図６に示した従来の半導体パワーモジュール１００における金属ベース絶縁板１の組立方法を説明する断面の模式図である。以下、図７により、金属ベース絶縁基板１の製造プロセスを説明する。
【０００９】
図７において、金属ベース板１１１の主面上に絶縁板１１２を、絶縁板１１２の主面上に銅箔を配置した状態において一体に熱圧着し、その後、上記銅箔をウェットエッチングにより、主回路配線パターン１１３を形成し、金属ベース板１１１、絶縁板１１２および主回路配線パターン１１３からなる主回路１１４が完成する。
【００１０】
別途、絶縁板１１５の所定の位置に、その両主面に銅箔を形成すると共にＮＣドリルで孔明けし、貫通孔１１５ａの内面に上記銅メッキ層を形成する。次に銅箔をウェットエッチングにより、一方の主面に制御回路パターン１１６ａと、他方の主面に制御回路接地用パターン１１７とを、貫通孔１１５ａ内面の前記銅メッキ層により電気的に導通させ、これにより、制御回路接地用パターン１１７を制御回路(図示せず)の共通接地用パターンとして制御回路基板１１８が完成する。
【００１１】
その後、主回路基板１１４における絶縁板１１２の所定の領域１１２ａに制御回路基板１１８を接着シート１１９を介して接合することにより、図６に示すごとく、金属ベース絶縁基板１が完成し、図５に示した半導体パワーモジュール１００の底板として供される。
【００１２】
以上のごとく、従来の半導体パワーモジュール１００における金属ベース絶縁基板１は、金属板１１１、絶縁板１１２および主回路配線パターン１１３により構成された主回路基板１１４、および主回路基板１１４に接着シート１１９を用いて接着された制御回路基板１１８により構成されている。
【００１３】
【発明が解決しようとする課題】
従来の半導体パワーモジュールは、主回路基板１１４の上に制御回路基板１１８を積み重ねた積層構造の金属ベース絶縁基板１を用いているので、金属ベース絶縁基板１の製造に際し、主回路基板１１４および制御回路基板１１８が別々の工程で製造され、その後、積層プレスにて一体化する工程が必要であり、工数が多いためコスト高となり、また、上記、各工程で熱ストレスが加わり、結果として金属ベース絶縁基板１の絶縁特性を劣化させる要因となる等の課題があった。
【００１４】
また比較的高価な主回路基板１１４が、放熱を必要としない制御回路基板１１８の直下にも設けられているので、無駄なコストを要するという課題もあった。
【００１５】
また自己発生ノイズ対策上、制御回路基板１１８には制御回路接地用パターン１１７を設ける必要があったため、制御回路基板１１８の製作に別工程が必要であり、そのためコストがかかっていた。
【００１６】
また主回路端子や制御回路端子の取り付けにハンダを用いているため、取り付けの工程に治具等が必要であり、そしてエポキシ樹脂９注型、キュア工程等が必要なために工程自体も複雑であり、しかもこれ以降の工程で影響を受け易く、端子位置が移動し製品の端子位置づれが発生したり、また端子下の回路基板にストレスがかかり、製品信頼性上の課題もあった。
【００１７】
またハンダ付けによる熱ストレスの影響で金属ベース絶縁基板の絶縁信頼性が劣化するという課題もあった。
【００１８】
この発明は、上記の問題点を解消するために行われたものであり、製造工数が少なくかつ安価でしかも高信頼性が得られる半導体パワーモジュールを提供することを目的とする。
【００１９】
【課題を解決するための手段】
本発明に係わる半導体パワーモジュールは、パワー素子を搭載して回路構成している主回路部と、このパワー素子を制御する制御素子を搭載して回路構成している制御回路部とを樹脂製のケースで囲繞した半導体パワーモジュールにおいて、
前記主回路部の外部接続用主回路端子を前記ケースにインサートすると共に、前記外部接続用主回路端子の一端側を金属ベース板上に載置された絶縁板上に接着して主回路パターンを形成し、該主回路パターン上にパワー素子を搭載したことを特徴とする。
【００２０】
本発明において、前記制御回路部の外部接続用制御端子を前記ケースにインサートすると共に、前記外部接続用制御端子の一部で制御回路パターンを形成し、該制御回路パターン上に前記制御素子を搭載したことが好ましい。
【００２１】
本発明において、前記絶縁板は、熱圧着により硬化する絶縁シートであることが好ましい。
【００２２】
第４の発明に係わる半導体パワーモジュールは、パワー素子を搭載して回路構成している主回路部と、このパワー素子を制御する制御素子を搭載して回路構成している制御回路部とを樹脂製のケースで囲繞した半導体パワーモジュールにおいて、
前記制御回路部の外部接続用制御端子を前記ケースにインサートし、該外部接続用制御端子の一部で制御素子が搭載される制御回路パターンを形成すると共に、該制御回路パターンの前記制御素子が搭載される領域の周縁部に突起を配設したことを特徴とする。
【００２３】
【発明の実施の形態】
実施の形態１
図１は、この発明の実施の形態１として半導体パワーモジュールの断面を示す模式図である。
【００２４】
図において、１は金属ベース絶縁基板、２は金属ベース絶縁基板１における主回路パターン１８にハンダ付けにより接合されたＩＧＢＴ、フライホイールダイオード等のパワー素子、３は後述の底部７ａに設けた制御回路パターン１９上にハンダ付けにより接合され、パワー素子２を制御する制御素子である。
【００２５】
そして、４は、後述する耐熱性に優れたＰＰＳ(ポリ・フェニレン・サルファイト)製の樹脂からなる外枠７にインサート成形された主回路端子、５も前記主回路端子と同様に、前記外枠７にインサート成形された制御回路端子である。またこの制御回路端子５は、制御回路パターン１９を兼ねている。主回路端子４、制御回路端子５、夫々は金属ベース絶縁基板１の主回路パターン１８やパワー素子２などからの接続として安価で電気伝導性に優れたアルミワイヤ６により接続されている。
【００２６】
外枠７は、パワー素子２および制御素子３を囲繞するように金属ベース絶縁基板１上に配設され、かつ金属ベース絶縁基板１と接着されており、前述のごとく、主回路端子４および制御回路端子５はこの外枠７にインサート成形されている。また、この外枠７の一方側には内側方向に突出するようにして底部７ａが一体形成されており、その先端部が金属ベース絶縁基板１の一端に当接している。この底部７ａと金属ベース絶縁基板１とが底板を形成しており、そしてこの底板と外枠７とにより、インサートケース８を形成している。９はパワー素子２および制御素子３を覆うようにインサートケース８内に充填されたエポキシ樹脂であり、金属ベース絶縁基板１からエポキシ樹脂９の各構成要素により、本実施の形態１としての半導体パワーモジュール１０を構成している。
【００２７】
実施の形態２
図２は、もう一つの実施の形態２として半導体パワーモジュールの断面を示す模式図である。
【００２８】
図において、１１１は熱伝導に優れたアルミ材からなる金属ベース板、１１２ａは金属ベース板１１１の上に配設された絶縁板で両部材が金属ベース絶縁基板１をなす。２は主回路パターン１８にハンダ付けにより接合されたＩＧＢＴ、フライホイールダイオード等のパワー素子、３は制御回路パターン１９上にハンダ付けにより接合され、パワー素子２を制御する制御素子である。
【００２９】
また絶縁板１１２ａは、金属ベース板１１１と主回路パターン１８とを接着するための電気絶縁性、耐熱性および高熱伝導性を兼ね備えた高熱伝導充填剤入りのエポキシ樹脂製の接着剤であり、半硬化(Ｂステージ品)の絶縁シートとして供給され、熱圧着により硬化し、絶縁板を形成する。
【００３０】
そして、４は、耐熱性に優れたＰＰＳ(ポリ・フェニレン・サルファイト)製の樹脂からなる外枠７にインサート成形された主回路端子、５も前記主回路端子と同様に、前記外枠７にインサート成形された制御回路端子である。この制御回路端子５は、制御回路パターン１９を兼ねている。また、主回路端子４も主回路パターンを兼ねている。主回路端子４、制御回路端子５、夫々は金属ベース絶縁基板１の主回路パターン１８やパワー素子２などからの接続として安価で電気伝導性に優れたアルミワイヤ６により接続されている。
【００３１】
外枠７は、パワー素子２および制御素子３を囲繞するように金属ベース絶縁基板１上に配設され、かつ金属ベース絶縁基板１と接着されており、前述のごとく、主回路端子４および制御回路端子５はこの外枠７にインサート成形されている。また、この外枠７の一方側には内側方向(図２では左方向)に突出するようにして底部７ａが一体形成されており、その先端部が金属ベース絶縁基板１の一端に当接している。この底部７ａと金属ベース絶縁基板１とが底板を形成しており、そしてこの底板と外枠７とにより、インサートケース８を形成している。９はパワー素子２および制御素子３を覆うようにインサートケース８内に充填されたエポキシ樹脂であり、金属ベース絶縁基板１からエポキシ樹脂９の各構成要素により、本実施の形態２としての半導体パワーモジュール１０ａを構成している。
【００３２】
実施の形態３
図３は、この発明の実施の形態３として半導体パワーモジュールの断面を示す模式図である。
【００３３】
図において、１は金属ベース絶縁基板、２は主回路パターン１８にハンダ付けにより接合されたＩＧＢＴ、フライホイールダイオード等のパワー素子、３は後述の制御回路基板２０の制御回路パターン１９上にハンダ付けにより接合され、パワー素子２を制御する制御素子である。
【００３４】
そして、４は、耐熱性に優れたＰＰＳ(ポリ・フェニレン・サルファイト)製の樹脂からなる外枠７にインサート成形された主回路端子、５も前記主回路端子と同様に、後記の外枠７にインサート成形された制御回路端子である。またこの制御回路端子５は、制御回路パターン１９を兼ねている。主回路端子４、制御回路端子５、夫々は金属ベース絶縁基板１の主回路パターン１８やパワー素子２などからの接続として安価で電気伝導性に優れたアルミワイヤ６により接続されている。
【００３５】
制御回路基板２０は、ガラスエポキシ機材を介した両面銅箔パターンで構成された基板であり、制御回路端子５を後記の外枠７にインサート成形する時に同時に回路パターン化された状態の基板をインサートさせ、一体化する。
【００３６】
外枠７は、パワー素子２および制御素子３を囲繞するように金属ベース絶縁基板１上に配設され、かつ金属ベース絶縁基板１と接着されており、前述のごとく、主回路端子４、制御回路端子５および制御回路基板２０はこの外枠７にインサート成形されている。また、この外枠７の一方側には内側方向に突出するようにして底部７ａが一体形成されており、その先端部が金属ベース絶縁基板１の一端に当接している。この底部７ａと金属ベース絶縁基板１とが底板を形成しており、そしてこの底板と外枠７とにより、インサートケース８を形成している。９はパワー素子２および制御素子３を覆うようにインサートケース８内に充填されたエポキシ樹脂であり、金属ベース絶縁基板１からエポキシ樹脂９の各構成要素により、本実施の形態３としての半導体パワーモジュール１０ｂを構成している。
【００３７】
図１、図２および図３で示したインサートケースを採用することによって、図５で示したように、主回路端子および制御回路端子を、従来金属ベース絶縁基板にハンダ付けしていた工程に替えてアルミワイヤでの結線としたので、熱ストレスをかける工程を排除でき、そのため熱劣化を防止でき、高信頼性のものが得られる。
【００３８】
またインサートケース成形にて、主回路端子および制御回路端子を構成することによって、各端子の位置も決定するため、半導体パワーモジュールの各工程での変形もなくせる。
【００３９】
また制御回路部の底面がＰＰＳ樹脂で形成され、またその厚さも厚くすることが可能であるので、ノイズの影響を受け難い構造が得られる。
【００４０】
また制御回路は全てインサートケース上にて構成することが出来たため、比較的高価であった、金属ベース絶縁基板は放熱性が要求される部分の主回路のみにすることができ、基板サイズが小型化でき、そのコスト低減ができる。
【００４１】
実施の形態４
図４は、この発明の実施の形態４として、図１、図２、図３で採用したインサートケースの断面を示す模式図である。
【００４２】
図において、インサートケース８を構成するＰＰＳにより、制御回路パターン１９を係止させるための突起８ａ、８ｂを設ける。これらの突起により、制御素子３の搭載時に位置決めが可能となる。
【００４３】
【発明の効果】
この発明は、以上のように構成されているので、以下に示すような効果を奏する。
【００４４】
本発明によれば、主回路パターンをケースにインサートした外部接続用主回路端子の一部で構成し、金属ベース板上に載置された絶縁板上に接着したので、前記主回路部の総体的な小型化が出来るだけでなく、構造が簡単で、生産性に優れており、結果的に、小型で、生産性に優れ、安価な半導体パワーモジュールを提供できる効果がある。
【００４５】
また、制御回路パターンをケースにインサートした外部接続用端子の一部で構成したので、従来の制御回路用絶縁基板が不要で、生産性に優れ、安価な半導体パワーモジュールを提供出来る効果がある。
【００４６】
また、前記絶縁板は、熱圧着により硬化する絶縁シートであるので、生産性に優れ、安価な半導体パワーモジュールを提供出来る効果がある。
【図面の簡単な説明】
【図１】 この発明の実施の形態１としての半導体パワーモジュールの断面を示す模式図である。
【図２】 この発明の実施の形態２としての半導体パワーモジュールの断面を示す模式図である。
【図３】 この発明の実施の形態３としての半導体パワーモジュールの断面を示す模式図である。
【図４】 この発明の実施の形態４としての半導体パワーモジュールの断面を示す模式図である。
【図５】 従来の半導体パワーモジュールの断面を示す模式図である。
【図６】 図５に示した従来の半導体パワーモジュールにおける金属ベース絶縁基板の断面を示す模式図である。
【図７】 図６に示した従来の金属ベース絶縁板の組立方法を説明する断面の模式図である。
【符号の説明】
１ 金属ベース絶縁基板、２ パワー素子、３ 制御素子、７ 外枠、８ インサートケース、８ａ 突起、８ｂ 突起、７ａ 底部、１０ 半導体パワーモジュール(実施例１)、１０ａ 半導体パワーモジュール(実施例２)、１０ｂ 半導体パワーモジュール(実施例３)、１１金属ベース板、１２ 絶縁板、１８ 主回路配線パターン、１９ 制御回路配線パターン、２０ 制御回路基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor power module.
[0002]
[Prior art]
A semiconductor power module incorporates a main circuit including a power element, which is a semiconductor element for power control, and a control circuit including a control element, which is a semiconductor element that controls the operation of the main circuit, in one device. is there. It is mainly applied to inverter devices that control motors and the like.
[0003]
FIG. 5 is a schematic view showing a cross section of a conventional semiconductor power module. In the figure, reference numeral 1 is a metal base insulating substrate, 2 is a power element such as an IGBT or flywheel diode joined by soldering on a main circuit wiring pattern 113 described later on the metal base insulating substrate, and 3 is a metal base insulating substrate described later. Control elements 5 for driving the main circuit joined by soldering on the control circuit pattern 116 are control circuit terminals joined by soldering on the control circuit pattern 116, and are connected to the power element 2 and the control element 3, respectively. They are connected by an aluminum wire 6.
[0004]
Reference numeral 7 denotes an outer frame which is disposed on and adhered to the metal base insulating substrate 1 so as to surround the power element 2 and the control element 3, and the metal base insulating substrate 1 and the outer frame 7 are used to form a metal base. A case 8 having the insulating substrate 1 as a bottom plate is formed. Reference numeral 9 denotes an epoxy resin filled in the case 8 so as to cover the power element 2 and the control element 3, and the conventional semiconductor power module 100 is constituted by the epoxy resin 9 from the metal base insulating substrate 1.
[0005]
Next, the configuration of the metal base insulating substrate 1 in the semiconductor power module 100 will be described with reference to FIG. In the figure, 111 is a metal base part plate made of an aluminum material having excellent thermal conductivity, 112 is an insulating plate disposed on the metal base plate 111, and 113 is a copper foil pasted on the insulating plate 112. The main circuit board 114 is constituted by the metal base plate 111, the insulating plate 112, and the main circuit wiring pattern 113. The main circuit wiring pattern 113 is shown in FIG. As described above, the power element 2 and the main circuit terminal 4 are joined by soldering.
[0006]
115 is an epoxy resin insulating plate (glass epoxy base material) made of glass fiber as an aggregate, and 116 and 117 are obtained by etching copper foils attached to both main surfaces of the insulating plate 115, respectively. The control circuit wiring pattern and the control circuit grounding pattern. In addition, a through hole 115a is formed at a predetermined portion of the insulating plate 115, and the inner surface thereof is plated with copper. The copper plating layer electrically connects the control circuit wiring pattern 116 and the control circuit ground pattern 117, The control circuit ground pattern 117 functions as a common ground pattern for a control circuit (not shown).
[0007]
The insulating plate 115, the control circuit wiring pattern 116, and the control circuit grounding pattern 117 constitute a control circuit board 118, and the control circuit board 118 is not fixed to the main circuit wiring pattern 113 of the insulating plate 112. The region 112a is joined via an adhesive sheet 119. As shown in FIG. 5, the control element 3 and the control circuit terminal 5 are joined to the control circuit wiring pattern 116 by soldering.
[0008]
FIG. 7 is a schematic cross-sectional view illustrating a method of assembling the metal base insulating plate 1 in the conventional semiconductor power module 100 shown in FIG. Hereinafter, the manufacturing process of the metal base insulating substrate 1 will be described with reference to FIG.
[0009]
In FIG. 7, the insulating plate 112 is integrally bonded to the main surface of the metal base plate 111, and the copper foil is integrally bonded in a state where the copper foil is disposed on the main surface of the insulating plate 112. The circuit wiring pattern 113 is formed, and the main circuit 114 including the metal base plate 111, the insulating plate 112, and the main circuit wiring pattern 113 is completed.
[0010]
Separately, copper foil is formed on both main surfaces of the insulating plate 115 at predetermined positions and drilled with an NC drill, and the copper plating layer is formed on the inner surface of the through hole 115a. Next, by wet etching the copper foil, the control circuit pattern 116a on one main surface and the control circuit ground pattern 117 on the other main surface are electrically connected by the copper plating layer on the inner surface of the through hole 115a, As a result, the control circuit board 118 is completed using the control circuit ground pattern 117 as a common ground pattern for the control circuit (not shown).
[0011]
Thereafter, the control circuit board 118 is bonded to the predetermined region 112a of the insulating plate 112 in the main circuit board 114 via the adhesive sheet 119, thereby completing the metal base insulating board 1 as shown in FIG. It serves as a bottom plate of the semiconductor power module 100 shown.
[0012]
As described above, the metal base insulating substrate 1 in the conventional semiconductor power module 100 includes the metal plate 111, the insulating plate 112, the main circuit substrate 114 constituted by the main circuit wiring pattern 113, and the adhesive sheet 119 on the main circuit substrate 114. The control circuit board 118 is bonded by using the control circuit board 118.
[0013]
[Problems to be solved by the invention]
Since the conventional semiconductor power module uses the metal base insulating substrate 1 having a laminated structure in which the control circuit board 118 is stacked on the main circuit board 114, the main circuit board 114 and the control circuit are used in the manufacture of the metal base insulating substrate 1. The circuit board 118 is manufactured in separate processes and then integrated in a laminating press, which requires a lot of man-hours and is costly. In addition, thermal stress is applied in each process described above, resulting in a metal base. There existed problems, such as becoming a factor which deteriorates the insulation characteristic of the insulated substrate 1.
[0014]
In addition, since the relatively expensive main circuit board 114 is also provided immediately below the control circuit board 118 that does not require heat dissipation, there is a problem in that wasteful cost is required.
[0015]
Further, since it is necessary to provide the control circuit grounding pattern 117 on the control circuit board 118 as a countermeasure against self-generated noise, a separate process is required for manufacturing the control circuit board 118, which is costly.
[0016]
Also, since solder is used to attach the main circuit terminals and control circuit terminals, jigs are required for the attachment process, and the process itself is complicated due to the need for epoxy resin 9 casting, curing process, etc. In addition, there is a problem in product reliability because it is easily affected by subsequent processes, the terminal position is moved and the terminal position of the product is shifted, and the circuit board under the terminal is stressed.
[0017]
Another problem is that the insulation reliability of the metal base insulating substrate deteriorates due to the influence of thermal stress due to soldering.
[0018]
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor power module with a small number of manufacturing steps, low cost, and high reliability.
[0019]
[Means for Solving the Problems]
The semiconductor power module according to the present invention is made of a resin-made main circuit section having a circuit configuration with a power element mounted thereon and a control circuit section having a circuit configuration mounted with a control element for controlling the power element. In a semiconductor power module surrounded by a case,
The main circuit terminal for external connection of the main circuit portion is inserted into the case, and one end side of the main circuit terminal for external connection is bonded to an insulating plate placed on a metal base plate to form a main circuit pattern. And a power element is mounted on the main circuit pattern .
[0020]
In the present invention, an external connection control terminal of the control circuit section is inserted into the case, a control circuit pattern is formed by a part of the external connection control terminal, and the control element is mounted on the control circuit pattern. It is preferred that
[0021]
In the present invention, the insulating plate is preferably an insulating sheet that is cured by thermocompression bonding.
[0022]
According to a fourth aspect of the present invention, there is provided a semiconductor power module comprising: a main circuit portion having a circuit configuration with a power element mounted thereon; In the semiconductor power module surrounded by the case made of
Inserting the control terminal for external connection of the control circuit section into the case, forming a control circuit pattern in which the control element is mounted by a part of the control terminal for external connection, and the control element of the control circuit pattern Protrusions are arranged at the peripheral edge of the area to be mounted.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1
FIG. 1 is a schematic diagram showing a cross section of a semiconductor power module as Embodiment 1 of the present invention.
[0024]
In the figure, 1 is a metal base insulating substrate, 2 is a power element such as an IGBT or flywheel diode joined to the main circuit pattern 18 in the metal base insulating substrate 1 by soldering, and 3 is a control circuit provided on a bottom portion 7a to be described later. It is a control element that is bonded onto the pattern 19 by soldering and controls the power element 2.
[0025]
4 is a main circuit terminal insert-molded in an outer frame 7 made of a resin made of PPS (polyphenylene sulfite) having excellent heat resistance, which will be described later. The control circuit terminals are insert-molded in the frame 7. The control circuit terminal 5 also serves as the control circuit pattern 19. The main circuit terminal 4 and the control circuit terminal 5 are connected by an aluminum wire 6 that is inexpensive and has excellent electrical conductivity as a connection from the main circuit pattern 18 of the metal base insulating substrate 1 and the power element 2.
[0026]
The outer frame 7 is disposed on the metal base insulating substrate 1 so as to surround the power element 2 and the control element 3, and is bonded to the metal base insulating substrate 1, and as described above, the main circuit terminal 4 and the control element 7 are controlled. The circuit terminal 5 is insert-molded in the outer frame 7. Further, a bottom portion 7 a is integrally formed on one side of the outer frame 7 so as to protrude inwardly, and a tip portion thereof is in contact with one end of the metal base insulating substrate 1. The bottom portion 7a and the metal base insulating substrate 1 form a bottom plate, and the bottom plate and the outer frame 7 form an insert case 8. Reference numeral 9 denotes an epoxy resin filled in the insert case 8 so as to cover the power element 2 and the control element 3, and the semiconductor power as the first embodiment is determined by each component of the metal base insulating substrate 1 to the epoxy resin 9. The module 10 is configured.
[0027]
Embodiment 2
FIG. 2 is a schematic diagram showing a cross section of a semiconductor power module as another second embodiment.
[0028]
In the figure, 111 is a metal base plate made of an aluminum material excellent in heat conduction, 112a is an insulating plate disposed on the metal base plate 111, and both members form the metal base insulating substrate 1. Reference numeral 2 denotes a power element such as an IGBT or a flywheel diode joined to the main circuit pattern 18 by soldering. Reference numeral 3 denotes a control element which is joined to the control circuit pattern 19 by soldering and controls the power element 2.
[0029]
The insulating plate 112a is an adhesive made of an epoxy resin containing a high thermal conductive filler having electrical insulation, heat resistance and high thermal conductivity for bonding the metal base plate 111 and the main circuit pattern 18. It is supplied as a cured (B stage product) insulating sheet and cured by thermocompression to form an insulating plate.
[0030]
4 is a main circuit terminal insert-molded in an outer frame 7 made of a resin made of PPS (polyphenylene sulfite) having excellent heat resistance, and 5 is also the outer frame 7 like the main circuit terminal. It is a control circuit terminal insert-molded in The control circuit terminal 5 also serves as the control circuit pattern 19. The main circuit terminal 4 also serves as a main circuit pattern. The main circuit terminal 4 and the control circuit terminal 5 are connected by an aluminum wire 6 that is inexpensive and has excellent electrical conductivity as a connection from the main circuit pattern 18 of the metal base insulating substrate 1 and the power element 2.
[0031]
The outer frame 7 is disposed on the metal base insulating substrate 1 so as to surround the power element 2 and the control element 3, and is bonded to the metal base insulating substrate 1, and as described above, the main circuit terminal 4 and the control element 7 are controlled. The circuit terminal 5 is insert-molded in the outer frame 7. Further, a bottom portion 7a is integrally formed on one side of the outer frame 7 so as to protrude inwardly (leftward in FIG. 2), and its tip end abuts one end of the metal base insulating substrate 1. Yes. The bottom portion 7a and the metal base insulating substrate 1 form a bottom plate, and the bottom plate and the outer frame 7 form an insert case 8. Reference numeral 9 denotes an epoxy resin filled in the insert case 8 so as to cover the power element 2 and the control element 3, and the semiconductor power as the second embodiment is constituted by each component of the metal base insulating substrate 1 to the epoxy resin 9. The module 10a is configured.
[0032]
Embodiment 3
FIG. 3 is a schematic diagram showing a cross section of a semiconductor power module as Embodiment 3 of the present invention.
[0033]
In the figure, 1 is a metal base insulating substrate, 2 is a power element such as an IGBT or flywheel diode joined to the main circuit pattern 18 by soldering, and 3 is soldered on a control circuit pattern 19 of the control circuit board 20 described later. This is a control element that controls the power element 2.
[0034]
4 is a main circuit terminal insert-molded in an outer frame 7 made of a resin made of PPS (polyphenylene sulfite) having excellent heat resistance, and 5 is an outer frame described later, similarly to the main circuit terminal. 7 is a control circuit terminal which is insert-molded. The control circuit terminal 5 also serves as the control circuit pattern 19. The main circuit terminal 4 and the control circuit terminal 5 are connected by an aluminum wire 6 that is inexpensive and has excellent electrical conductivity as a connection from the main circuit pattern 18 of the metal base insulating substrate 1 and the power element 2.
[0035]
The control circuit board 20 is a board composed of a double-sided copper foil pattern through glass epoxy equipment, and when the control circuit terminal 5 is insert-molded into the outer frame 7 described later, the circuit-patterned board is inserted at the same time. And unite.
[0036]
The outer frame 7 is disposed on the metal base insulating substrate 1 so as to surround the power element 2 and the control element 3 and is bonded to the metal base insulating substrate 1. The circuit terminals 5 and the control circuit board 20 are insert-molded in the outer frame 7. Further, a bottom portion 7 a is integrally formed on one side of the outer frame 7 so as to protrude inwardly, and a tip portion thereof is in contact with one end of the metal base insulating substrate 1. The bottom portion 7a and the metal base insulating substrate 1 form a bottom plate, and the bottom plate and the outer frame 7 form an insert case 8. Reference numeral 9 denotes an epoxy resin filled in the insert case 8 so as to cover the power element 2 and the control element 3, and the semiconductor power as the third embodiment is constituted by each component of the metal base insulating substrate 1 to the epoxy resin 9. The module 10b is configured.
[0037]
By adopting the insert case shown in FIG. 1, FIG. 2 and FIG. 3, as shown in FIG. 5, the main circuit terminal and the control circuit terminal are replaced with the conventional soldering process on the metal base insulating substrate. Since the connection is made with aluminum wires, the process of applying heat stress can be eliminated, so that thermal deterioration can be prevented and high reliability can be obtained.
[0038]
Further, by forming the main circuit terminal and the control circuit terminal by molding the insert case, the position of each terminal is also determined, so that there is no deformation in each process of the semiconductor power module.
[0039]
In addition, since the bottom surface of the control circuit portion is made of PPS resin and the thickness thereof can be increased, a structure that is hardly affected by noise can be obtained.
[0040]
In addition, since all the control circuits could be configured on the insert case, it was relatively expensive. The metal-based insulating board can be made only to the main circuit where heat dissipation is required, and the board size is small. The cost can be reduced.
[0041]
Embodiment 4
FIG. 4 is a schematic diagram showing a cross section of the insert case employed in FIGS. 1, 2, and 3 as Embodiment 4 of the present invention.
[0042]
In the figure, protrusions 8 a and 8 b for locking the control circuit pattern 19 are provided by PPS constituting the insert case 8. These protrusions enable positioning when the control element 3 is mounted.
[0043]
【The invention's effect】
Since this invention is comprised as mentioned above, there exists an effect as shown below.
[0044]
According to the present invention, the main circuit pattern is constituted by a part of the main circuit terminals for external connection inserted in the case, and is bonded onto the insulating plate placed on the metal base plate. In addition to being able to reduce the overall size, the structure is simple and the productivity is excellent. As a result, there is an effect that it is possible to provide a semiconductor power module that is small, excellent in productivity, and inexpensive.
[0045]
Further, since the control circuit pattern is constituted by a part of the external connection terminals inserted into the case, the conventional control circuit insulating substrate is unnecessary, and there is an effect that it is possible to provide an inexpensive semiconductor power module that is excellent in productivity.
[0046]
Moreover, since the said insulating board is an insulating sheet hardened | cured by thermocompression bonding, it is excellent in productivity and has an effect which can provide an inexpensive semiconductor power module.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing a cross section of a semiconductor power module as Embodiment 1 of the present invention.
FIG. 2 is a schematic diagram showing a cross section of a semiconductor power module as a second embodiment of the present invention.
FIG. 3 is a schematic diagram showing a cross section of a semiconductor power module according to a third embodiment of the present invention.
FIG. 4 is a schematic diagram showing a cross section of a semiconductor power module as Embodiment 4 of the present invention.
FIG. 5 is a schematic view showing a cross section of a conventional semiconductor power module.
6 is a schematic view showing a cross section of a metal base insulating substrate in the conventional semiconductor power module shown in FIG.
7 is a schematic cross-sectional view illustrating a method of assembling the conventional metal base insulating plate shown in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Metal base insulation board, 2 Power element, 3 Control element, 7 Outer frame, 8 Insert case, 8a Protrusion, 8b Protrusion, 7a Bottom part, 10 Semiconductor power module (Example 1), 10a Semiconductor power module (Example 2) 10b Semiconductor power module (Example 3), 11 metal base plate, 12 insulating plate, 18 main circuit wiring pattern, 19 control circuit wiring pattern, 20 control circuit board

Claims (3)

パワー素子を搭載して回路構成している主回路部と、このパワー素子を制御する制御素子を搭載して回路構成している制御回路部とを樹脂製のケースで囲繞した半導体パワーモジュールにおいて、
前記主回路部の外部接続用主回路端子を前記ケースにインサートすると共に、前記外部接続用主回路端子の一端側を金属ベース板上に載置された絶縁板上に接着して主回路パターンを形成し、該主回路パターン上にパワー素子を搭載したことを特徴とする半導体パワーモジュール。A main circuit which is a circuit configuration equipped with a power element, and a control circuit unit equipped with a control element is the circuit configuration for controlling the power element in the semiconductor power modules surrounded by a resin case ,
The main circuit terminal for external connection of the main circuit portion is inserted into the case, and one end side of the main circuit terminal for external connection is bonded to an insulating plate placed on a metal base plate to form a main circuit pattern. A semiconductor power module formed and mounted with a power element on the main circuit pattern . 前記制御回路部の外部接続用制御端子を前記ケースにインサートすると共に、前記外部接続用制御端子の一部で制御回路パターンを形成し、該制御回路パターン上に前記制御素子を搭載したことを特徴とする請求項１記載の半導体パワーモジュール。The external connection control terminal before Symbol control circuit section with insert to the casing, said forming part with control circuit pattern of the external connection control terminal, equipped with the control device to the control circuit patterns on The semiconductor power module according to claim 1. 前記絶縁板は、熱圧着により硬化する絶縁シートであることを特徴とする請求項１または２記載の半導体パワーモジュール。The semiconductor power module according to claim 1, wherein the insulating plate is an insulating sheet that is cured by thermocompression bonding.
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