JPH08288441A - Power semiconductor device - Google Patents

Power semiconductor device

Info

Publication number
JPH08288441A
JPH08288441A JP7095047A JP9504795A JPH08288441A JP H08288441 A JPH08288441 A JP H08288441A JP 7095047 A JP7095047 A JP 7095047A JP 9504795 A JP9504795 A JP 9504795A JP H08288441 A JPH08288441 A JP H08288441A
Authority
JP
Japan
Prior art keywords
circuit board
frame
circuit pattern
semiconductor device
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7095047A
Other languages
Japanese (ja)
Other versions
JP2972112B2 (en
Inventor
Hirobumi Tsunano
博文 綱野
Hideyuki Imanaka
秀行 今中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7095047A priority Critical patent/JP2972112B2/en
Publication of JPH08288441A publication Critical patent/JPH08288441A/en
Application granted granted Critical
Publication of JP2972112B2 publication Critical patent/JP2972112B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To eliminate the need of a complicated manufacturing process so as to reduce the manufacturing cost and size of a power semiconductor device by integrally forming an insulating circuit board and frame-like case of the same resin and forming a circuit pattern of a metallic plate on the circuit board. CONSTITUTION: A frame-like case 5 which becomes the side wall of a liquid sealing resin housing section and insulating circuit board 6 which becomes the bottom of the housing section are integrally molded of the same resin. In the circuit board 6, an input-side circuit pattern 1 and output-side circuit pattern 2 are formed. An external output terminal 4 integrally formed with the circuit pattern 2 is bent at an angle of about 90 deg. against the pattern 2 and led out of the case 5 after passing through the case 5. The patterns 1 and 2 and terminal 4 are made of brass, etc., plated with tin, etc. Therefore, the manufacturing cost of a power semiconductor device can be reduced, because no complicated process is required at the time of joining the case 6 to the board 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、絶縁性回路基板上に半
導体素子を含む種々の電子部品および外部入出力端子を
搭載し、絶縁性回路基板の周囲を囲むように枠状ケース
を有し、封止樹脂でモールドして所定の機能を有するよ
うモジュール化した、例えばソリッドステートリレー
(以下、「SSR」と称す。)モジュール等の電力半導
体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mounts various electronic components including a semiconductor element and external input / output terminals on an insulating circuit board, and has a frame-like case surrounding the insulating circuit board. The present invention relates to a power semiconductor device such as, for example, a solid state relay (hereinafter referred to as “SSR”) module which is molded with a sealing resin to have a module having a predetermined function.

【0002】[0002]

【従来の技術】従来の電力半導体装置の構造の一例を、
図6を参照して説明する。尚、図6(a)〜(e)は、
従来の電力半導体装置の製造工程を示す概略図である。
2. Description of the Related Art An example of the structure of a conventional power semiconductor device is
This will be described with reference to FIG. In addition, FIG.
It is a schematic diagram showing a manufacturing process of a conventional power semiconductor device.

【0003】まず、Al等からなる金属板20の一面全
体に絶縁層21が形成され、かつこの絶縁層21上に導
体により回路パターン1,2が形成された金属ベースか
らなる絶縁性回路基板6の半導体素子を含む電子部品搭
載領域にクリーム状ハンダ11を塗布し、所定の位置に
半導体素子7および電気部品8,10を載置し、金属ベ
ースの絶縁性回路基板6全体を加熱、冷却することによ
りクリーム状ハンダ11を溶融、硬化させ、半導体素子
7および電気部品8,10をハンダ付する<図6
(a),(b)>。
First, an insulating layer 21 is formed on the entire surface of a metal plate 20 made of Al or the like, and an insulating circuit board 6 made of a metal base on which circuit patterns 1 and 2 are formed by conductors. The cream-like solder 11 is applied to the electronic component mounting region including the semiconductor element, the semiconductor element 7 and the electric components 8 and 10 are placed at predetermined positions, and the entire metal-based insulating circuit board 6 is heated and cooled. As a result, the creamy solder 11 is melted and hardened, and the semiconductor element 7 and the electric components 8 and 10 are soldered.
(A), (b)>.

【0004】次に、金属ベース絶縁性回路基板6上の回
路パターン1,2の外部入出力端子3,4搭載領域にク
リーム状ハンダ11′を塗布し、クリーム状ハンダ1
1′を塗布した箇所に外部入出力端子3,4を治具等に
よりセットした後、金属ベース絶縁性回路基板6全体を
加熱、冷却することによりクリーム状ハンダ11′を溶
融、硬化させ、外部入出力端子3,4をハンダ付し電気
的に接続する<図6(c)>。
Next, cream-like solder 11 'is applied to the external input / output terminal 3, 4 mounting areas of the circuit patterns 1 and 2 on the metal-based insulating circuit board 6, and the cream-like solder 1 is applied.
After setting the external input / output terminals 3 and 4 to the portion to which 1'is applied by a jig or the like, the creamy solder 11 'is melted and hardened by heating and cooling the entire metal base insulating circuit board 6, The input / output terminals 3 and 4 are soldered and electrically connected <Fig. 6 (c)>.

【0005】その後、金属ベース絶縁性回路基板6の外
周部に壁面となる枠状ケース5を、シリコンあるいはエ
ポキシ系等の接着剤22を用いて固定する<図6(d)
>。 最後に、枠状ケース5の内部に外部より遮断、密封し信
頼性を高めるために、エポキシ樹脂等からなる液状の封
止樹脂12を注入、硬化して電力半導体装置が完成する
<図6(e)>。
After that, the frame-shaped case 5 to be the wall surface is fixed to the outer peripheral portion of the metal-based insulating circuit board 6 by using an adhesive 22 such as silicon or epoxy-based resin (FIG. 6D).
>. Finally, in order to shield and seal the inside of the frame-like case 5 from the outside to enhance reliability, a liquid sealing resin 12 made of epoxy resin or the like is injected and cured to complete the power semiconductor device <FIG. e)>.

【0006】以上のように、従来の電力半導体装置の製
造工程は大きく分けて、図5(a)のアセンブリフロー
チャートに示すように、金属ベース絶縁性回路基板に半
導体素子を含む電子部品をハンダ付する部品搭載工程、
金属ベース絶縁性回路基板に外部入出力端子をハンダ付
する入出力端子固定工程、半導体素子を含む電子部品と
外部入出力端子が搭載された金属ベース絶縁性回路基板
に枠状ケースを接着する外枠固定工程および枠状ケース
内部に封止樹脂を注入、硬化する絶縁樹脂注入工程の4
工程からなる。
As described above, the manufacturing process of the conventional power semiconductor device is roughly divided, and as shown in the assembly flow chart of FIG. 5A, the electronic component including the semiconductor element is soldered to the metal base insulating circuit board. Component mounting process,
I / O terminal fixing process of soldering external I / O terminals to the metal-based insulating circuit board, and attaching a frame-shaped case to the metal-based insulating circuit board on which electronic components including semiconductor elements and external I / O terminals are mounted 4 of the frame fixing step and the insulating resin injecting step of injecting and curing the sealing resin inside the frame-shaped case
Consists of steps.

【0007】[0007]

【発明が解決しようとする課題】従来の電力半導体装置
においては、液状の封止樹脂を注入、硬化する際、その
液状樹脂収納部の壁面を形成するために、枠状ケースを
液状樹脂収納部の底面となる金属ベース絶縁性回路基板
に接着する外枠固定工程および金属ベース絶縁性回路基
板上の回路パターンに外部入出力端子を金属ベース絶縁
性回路基板に対して略垂直に固定する外部入出力端子固
定工程が必要となる。
In the conventional power semiconductor device, when the liquid sealing resin is injected and cured, the frame-shaped case is used to form the wall surface of the liquid resin housing portion. The outer frame fixing process for adhering to the metal base insulating circuit board, which is the bottom of the board, and the external input to fix the external input / output terminals to the circuit pattern on the metal base insulating circuit board almost perpendicularly An output terminal fixing process is required.

【0008】外枠固定工程では、接着剤としてシリコン
あるいはエポキシ系等の樹脂が使用されるが、これらを
使用した接着作業は比較的時間を要し、また、熱硬化性
接着剤を使用した場合は、接着剤を加熱して硬化するた
めの恒温槽等の設備が必要となり製造コストが高くな
る。
In the step of fixing the outer frame, a resin such as silicone or epoxy is used as an adhesive, but the bonding work using these takes a relatively long time, and when a thermosetting adhesive is used. Requires a facility such as a thermostatic oven for heating and curing the adhesive, which increases the manufacturing cost.

【0009】外部入出力端子固定工程では、外部入出力
端子と金属ベース絶縁性回路基板上の回路パターンとの
電気的接続および固定を、ハンダ材を介して行ってお
り、この作業も比較的時間を要し、また、外部入出力端
子を垂直に所望の箇所に固定するための治具等が必要と
なり製造コストが高くなる。
In the step of fixing the external input / output terminal, the external input / output terminal and the circuit pattern on the metal base insulating circuit board are electrically connected and fixed through the solder material, and this work also takes a relatively long time. In addition, a jig or the like for vertically fixing the external input / output terminal to a desired position is required, which increases the manufacturing cost.

【0010】また、電力半導体装置自体の発熱および周
囲温度の上昇等により、電力半導体装置が高温になった
場合、外部入出力端子と封止樹脂の膨張係数の違いによ
り、外部入出力端子と回路パターンとの接合部であるハ
ンダ材にストレスが加わり、ハンダ材にクラックが発生
することがあり信頼性の問題となっていた。
Further, when the power semiconductor device becomes high in temperature due to heat generation of the power semiconductor device itself, increase in ambient temperature, etc., the external input / output terminal and the circuit are affected by the difference in expansion coefficient between the external input / output terminal and the sealing resin. Stress is applied to the solder material that is the joint with the pattern, and cracks may occur in the solder material, which has been a problem of reliability.

【0011】更に、外部入出力端子を回路パターンにハ
ンダ付する領域が必要となり、金属ベース絶縁性回路基
板の小型化の妨げになっていた。
Further, a region for soldering the external input / output terminals to the circuit pattern is required, which hinders the miniaturization of the metal-based insulating circuit board.

【0012】本発明は、上記問題点に鑑みなされたもの
で、従来品に比べて安価で信頼性が高く、小型化を実現
した電力半導体装置を提供するものである。
The present invention has been made in view of the above problems, and provides a power semiconductor device which is cheaper, more reliable, and smaller in size than conventional products.

【0013】[0013]

【課題を解決するための手段】前記目的を達成するた
め、本発明の電力半導体装置は、金属板よりなる回路パ
ターンが内部に埋め込まれた絶縁性回路基板と、絶縁性
回路基板の周縁部から同一材質にて一体に立設し、封止
樹脂収容部の側壁となる枠状ケースと、絶縁性回路基板
の内部に埋め込まれた回路パターンと電気的接続を施し
た半導体素子を含む電子部品および外部入出力端子と、
絶縁性回路基板と枠状ケースとで形成された凹部に注
入、硬化された封止樹脂とを備えてなることを特徴とす
る。
To achieve the above object, a power semiconductor device of the present invention comprises an insulating circuit board having a circuit pattern made of a metal plate embedded therein, and a peripheral portion of the insulating circuit board. An electronic component including a frame-like case that is integrally erected upright with the same material and serves as a side wall of the encapsulating resin housing portion, and a semiconductor element electrically connected to the circuit pattern embedded inside the insulating circuit board, and External input / output terminals,
It is characterized in that it is provided with a sealing resin which is injected and cured in a recess formed by the insulating circuit board and the frame-shaped case.

【0014】また、請求項1記載の電力半導体装置にお
いて、外部入出力端子は、絶縁性回路基板に埋め込まれ
た回路パターンと一体に形成され、回路パターンに対し
て略90度の角度で折曲し、枠状ケースの内部を通り、
枠状ケース外部に導出したことを特徴とする。
Further, in the power semiconductor device according to the present invention, the external input / output terminal is formed integrally with the circuit pattern embedded in the insulating circuit board, and is bent at an angle of approximately 90 degrees with respect to the circuit pattern. Through the frame-shaped case,
It is characterized in that it is led out of the frame-shaped case.

【0015】[0015]

【作用】上記構成により本発明の請求項1記載の電力半
導体装置によれば、絶縁性回路基板と枠状ケースを同一
樹脂にて一体成形し、絶縁性回路基板内部に金属板によ
り回路パターンを形成した構造なので、絶縁性回路基板
に枠状ケースを固定する煩雑な工程が不要となる。ま
た、電子部品等の搭載領域直下にも回路パターンの形成
が可能となり、回路パターンの設計上の自由度が増す。
With the above structure, according to the power semiconductor device of the present invention, the insulating circuit board and the frame-like case are integrally molded with the same resin, and the circuit pattern is formed inside the insulating circuit board by the metal plate. Since the structure is formed, a complicated step of fixing the frame-shaped case to the insulating circuit board is not necessary. In addition, it becomes possible to form a circuit pattern directly under a mounting area for electronic components and the like, which increases the degree of freedom in designing the circuit pattern.

【0016】請求項2記載の電力半導体装置によれば、
外部入出力端子が回路パターンと一体に形成され、枠状
ケース内部を通り、枠状ケース外部に導出した構造なの
で、外部入出力端子を回路パターンにハンダ付する工程
が不要となり、更に、外部入出力端子と回路パターンの
ハンダ材による接合部が存在しないため、熱ストレス等
による接合部へのクラック発生という問題が解消され
る。
According to the power semiconductor device of the second aspect,
Since the external I / O terminals are formed integrally with the circuit pattern and pass through the inside of the frame-shaped case and are led out to the outside of the frame-shaped case, the step of soldering the external I / O terminals to the circuit pattern is unnecessary, and Since there is no joint between the output terminal and the circuit pattern by the solder material, the problem of cracking in the joint due to thermal stress or the like is solved.

【0017】更に、外部入出力端子を回路パターンにハ
ンダ付する領域が不要となるため、絶縁性回路基板の小
型化が図れる。
Further, since the area for soldering the external input / output terminal to the circuit pattern is unnecessary, the insulating circuit board can be downsized.

【0018】[0018]

【実施例】本発明の電力半導体装置は、半導体素子を含
む電子部品および外部入出力端子を搭載した絶縁性回路
基板の周囲を枠状ケースで取り囲み、絶縁性回路基板と
枠状ケースとで形成された凹部に液状樹脂を注入、硬化
する構造において、絶縁性回路基板と枠状ケースが同一
樹脂にて一体成形され、かつ、絶縁性回路基板内部に回
路パターンが埋め込まれ、外部に導出している外部入出
力端子が枠状ケース内部を通り、絶縁性回路基板内部の
回路パターンと一体的に形成されていることを特徴とす
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A power semiconductor device according to the present invention is formed by an insulating circuit board and a frame-like case by surrounding an insulating circuit board on which electronic components including semiconductor elements and external input / output terminals are mounted with a frame-like case. In a structure in which a liquid resin is injected into the recessed portion and cured, the insulating circuit board and the frame-shaped case are integrally molded with the same resin, and the circuit pattern is embedded inside the insulating circuit board and led out to the outside. The external input / output terminals that pass through the frame-shaped case are integrally formed with the circuit pattern inside the insulating circuit board.

【0019】以下、本発明の電力半導体装置の構造を、
一例として、5つのSSRが並列に接続された、いわゆ
る5チャンネル電力用SSRモジュールについて図面を
参照して詳細に説明する。
The structure of the power semiconductor device of the present invention will be described below.
As an example, a so-called 5-channel power SSR module in which five SSRs are connected in parallel will be described in detail with reference to the drawings.

【0020】尚、実施例において、従来例と同一機能部
分には同一記号を付している。
In the embodiment, the same functional parts as those of the conventional example are designated by the same symbols.

【0021】図1は、本発明の枠状ケース一体型絶縁性
回路基板の構造図であり、(a)は上面側からの内部透
視図、(b)は一部断面を含む正面図、(c)は側面断
面図である。
1A and 1B are structural views of an insulating circuit board integrated with a frame-like case according to the present invention. FIG. 1A is an internal perspective view from the upper surface side, and FIG. 1B is a front view including a partial cross section. c) is a side sectional view.

【0022】図1の如く、液状封止樹脂収容部の側壁と
なる枠状ケース5と底部の絶縁性回路基板6が同一樹脂
にて一体的に成形されている。
As shown in FIG. 1, a frame-shaped case 5 which serves as a side wall of the liquid sealing resin accommodating portion and an insulating circuit board 6 at the bottom are integrally formed of the same resin.

【0023】尚、一体的に成形されている枠状ケース5
と絶縁性回路基板6の材質は、後工程のハンダ付時の加
熱に耐えるために熱変形温度230℃以上の熱可塑性樹
脂、例えば、ポリフェニレンサルファイド(PPS)が
用いられる。
The frame-shaped case 5 integrally formed
As the material of the insulating circuit board 6, a thermoplastic resin having a heat distortion temperature of 230 ° C. or higher, such as polyphenylene sulfide (PPS), is used in order to withstand heating during soldering in a later step.

【0024】所望の回路に作成された入力側回路パター
ン1および出力側回路パターン2は、絶縁性回路基板6
の内部に形成されている。
The input side circuit pattern 1 and the output side circuit pattern 2 formed in a desired circuit are the insulating circuit board 6
Is formed inside.

【0025】また、外部出力端子4は、出力側回路パタ
ーン2と一体的に形成され、出力側回路パターン2に対
して略90度の角度で折曲し、枠状ケース5内部を通
り、枠状ケース5外部に導出している。
The external output terminal 4 is formed integrally with the output side circuit pattern 2, is bent at an angle of approximately 90 degrees with respect to the output side circuit pattern 2, passes through the inside of the frame-shaped case 5, It is led to the outside of the case 5.

【0026】尚、本例では、外部出力端子4だけを、出
力側回路パターン2と一体的に形成しているが、外部入
力端子も入力側回路パターン1と一体的に形成しても良
い。回路パターン1,2および外部入出力端子3,4の
材質としては、厚さ0.3〜0.5mm程度の黄銅板等
が用いられ、必要に応じ、スズメッキ等が施される。
Although only the external output terminal 4 is formed integrally with the output side circuit pattern 2 in this example, the external input terminal may be formed integrally with the input side circuit pattern 1. As a material for the circuit patterns 1 and 2 and the external input / output terminals 3 and 4, a brass plate or the like having a thickness of about 0.3 to 0.5 mm is used, and tin plating or the like is applied if necessary.

【0027】13は、外部機器への取り付け時、ネジ固
定するための貫通孔である。
Reference numeral 13 is a through hole for fixing a screw when it is attached to an external device.

【0028】図2は、上述の枠状ケース一体型絶縁性回
路基板における上面側からの外観図を示している。
FIG. 2 is an external view of the frame-shaped case-integrated insulative circuit board from the top side.

【0029】図2の如く、入力側回路パターンおよび出
力側回路パターンの半導体素子を含む電子部品のハンダ
付箇所には、絶縁性回路基板6に窓部14が設けられ、
回路パターンの一部が露出した状態になっている。
As shown in FIG. 2, a window portion 14 is provided on the insulating circuit board 6 at the soldered portion of the electronic component including the semiconductor element of the input side circuit pattern and the output side circuit pattern,
Part of the circuit pattern is exposed.

【0030】図3は、半導体素子を含む電子部品を搭載
した構造図であり、(a)は平面図、(b)は一部断面
を含む正面図、(c)は側面断面図である。
3A and 3B are structural views in which electronic parts including semiconductor elements are mounted, FIG. 3A is a plan view, FIG. 3B is a front view including a partial cross section, and FIG.

【0031】図3の如く、入力電流を調整する入力抵抗
10,半導体素子より構成されるSSR素子7および外
部からのノイズよりSSR素子7を保護するスナバ回路
を構成するコンデンサ8、抵抗9が所定の位置にハンダ
付される。
As shown in FIG. 3, an input resistor 10 for adjusting an input current, an SSR element 7 composed of a semiconductor element, a capacitor 8 and a resistor 9 constituting a snubber circuit for protecting the SSR element 7 from external noise are predetermined. Soldered to the position.

【0032】これら半導体素子7および電子部品8,
9,10は、リード端子タイプのものが使用され、この
リード端子15が絶縁性回路基板6の表面より露出した
回路パターンに形成された貫通孔16に挿入され、リー
ド端子15と回路パターンがハンダ材によりハンダ付さ
れる。ハンダ材としては、例えば、クリーム状の融点1
83℃のSn/Pb共晶ハンダが用いられる。
These semiconductor element 7 and electronic component 8,
9 and 10 are of lead terminal type, and the lead terminal 15 is inserted into a through hole 16 formed in a circuit pattern exposed from the surface of the insulating circuit board 6 so that the lead terminal 15 and the circuit pattern are soldered. Soldered by material. As the solder material, for example, a creamy melting point 1
Sn / Pb eutectic solder at 83 ° C is used.

【0033】尚、17は外部入力コネクターである。こ
の外部入力コネクター17は、外部出力端子4と同様
に、入力側回路パターン1と一体的に形成し、枠状ケー
ス5内部を通り枠状ケース5より外部に導出する外部入
力端子としても良い。
Reference numeral 17 is an external input connector. Like the external output terminal 4, the external input connector 17 may be an external input terminal that is integrally formed with the input side circuit pattern 1 and passes through the inside of the frame-shaped case 5 and is led out from the frame-shaped case 5 to the outside.

【0034】次に、本発明の一実施例による電力半導体
装置の製造方法を図4(a)〜(c)に示す概略図を参
照して説明する。
Next, a method of manufacturing a power semiconductor device according to an embodiment of the present invention will be described with reference to the schematic diagrams shown in FIGS.

【0035】まず、厚さ0.3〜0.5mm程度の金属
板からなる入力側回路パターン1,出力側回路パターン
2および回路パターン1,2と一体に作成された外部入
出力端子3,4を金型(図示せず)内の所定の位置に配
置し、いわゆるインサート成形により枠状ケース5と底
部の絶縁性回路基板6を同一樹脂で一体的に成形するこ
とにより、枠状ケース一体型絶縁性回路基板23が出来
上がる<図4(a)>。
First, the external input / output terminals 3 and 4 integrally formed with the input side circuit pattern 1, the output side circuit pattern 2 and the circuit patterns 1 and 2 which are made of a metal plate having a thickness of about 0.3 to 0.5 mm. Is placed at a predetermined position in a mold (not shown), and the frame-shaped case 5 and the insulating circuit board 6 at the bottom are integrally molded by the same resin by so-called insert molding, thereby forming a frame-shaped case integrated type. The insulating circuit board 23 is completed <FIG. 4 (a)>.

【0036】次に、半導体素子7を含む電子部品8,
9,10を絶縁性回路基板6内部の回路パターン1,2
にハンダ材11によりハンダ付する。このハンダ材11
としては、例えば、クリーム状の融点183℃のSn/
Pb共晶ハンダが用いられる<図4(b)>。
Next, an electronic component 8 including the semiconductor element 7,
9 and 10 are circuit patterns 1 and 2 inside the insulating circuit board 6.
Solder with the solder material 11. This solder material 11
Is, for example, Sn / having a cream-like melting point of 183 ° C.
Pb eutectic solder is used <Fig. 4 (b)>.

【0037】最後に、同一樹脂で形成された絶縁性回路
基板6と枠状ケース5に囲まれた凹部に液状封止樹脂1
2を注入、硬化させて、電力半導体装置が完成する。
Finally, the liquid sealing resin 1 is placed in the recess surrounded by the insulating circuit board 6 and the frame-shaped case 5 which are made of the same resin.
2 is injected and cured to complete the power semiconductor device.

【0038】ここで、液状封止樹脂12としては、例え
ば、熱硬化性エポキシ樹脂が用いられる<図4(c)
>。
Here, as the liquid sealing resin 12, for example, a thermosetting epoxy resin is used <FIG. 4 (c).
>.

【0039】以上のように構成された本発明の電力半導
体装置によれば、図5の従来と本発明の電力半導体装置
のアセンブリフローチャートの対比図に示すように、従
来の電力半導体装置の製造工程で必要であった外部入出
力端子を回路パターンにハンダ付する入出力端子固定工
程および絶縁性回路基板に枠状ケースを接着する外枠固
定工程が不要となり、工程の簡略化が図れる。
According to the power semiconductor device of the present invention configured as described above, as shown in a comparison diagram of the assembly flowchart of the conventional power semiconductor device of the present invention shown in FIG. The external input / output terminal fixing step of soldering the external input / output terminal to the circuit pattern and the outer frame fixing step of adhering the frame-shaped case to the insulating circuit board, which are required in the above step, are unnecessary, and the steps can be simplified.

【0040】[0040]

【発明の効果】以上説明から明らかなように、本発明の
請求項1記載の電力半導体装置によれば、絶縁性回路基
板と枠状ケースを同一樹脂にて一体成形し、絶縁性回路
基板内部に金属板により回路パターンを形成した構成な
ので、絶縁性回路基板に枠状ケースを接着する煩雑な工
程が不要となり、製造コストの低減が可能となる。
As is apparent from the above description, according to the power semiconductor device of the first aspect of the present invention, the insulating circuit board and the frame-shaped case are integrally molded with the same resin, and the inside of the insulating circuit board is formed. Since the circuit pattern is formed on the metal plate, the complicated process of adhering the frame-shaped case to the insulative circuit board is unnecessary, and the manufacturing cost can be reduced.

【0041】更に、電子部品等の搭載領域直下にも回路
パターンの形成が可能となり、回路パターンの設計上の
自由度が増す。
Furthermore, it becomes possible to form a circuit pattern directly under the mounting area for electronic parts and the like, and the degree of freedom in designing the circuit pattern increases.

【0042】請求項2記載の電力半導体装置によれば、
外部入出力端子が回路パターンと一体に形成され、枠状
ケース内部を通り、外部に導出した構成なので、外部入
出力端子を回路パターンにハンダ付する工程が不要とな
り、製造コストの低減が可能となる。
According to the power semiconductor device of the second aspect,
Since the external input / output terminals are formed integrally with the circuit pattern and pass through the inside of the frame-shaped case and are led out to the outside, the process of soldering the external input / output terminals to the circuit pattern is unnecessary, and the manufacturing cost can be reduced. Become.

【0043】更に、外部入出力端子と回路パターンとの
ハンダ材による接合部が存在しないため、熱ストレス等
による接合部へのクラック発生という問題が解消され、
高信頼性の電力半導体装置が提供出来る。
Further, since there is no joint between the external input / output terminal and the circuit pattern by the solder material, the problem of cracks occurring at the joint due to thermal stress is solved.
A highly reliable power semiconductor device can be provided.

【0044】更に、外部入出力端子を回路パターンにハ
ンダ付する領域が不要となるため、電力半導体装置の小
型化が可能となる。
Further, since the area for soldering the external input / output terminal to the circuit pattern is unnecessary, the power semiconductor device can be downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の枠状ケース一体型絶縁性回路基板の構
造図であり、(a)は上面側からの内部透視図、(b)
は一部断面を含む正面図、(c)は側面断面図である。
1A and 1B are structural views of a frame-shaped case-integrated insulating circuit board of the present invention, in which FIG. 1A is an internal perspective view from the upper surface side, and FIG.
Is a front view including a partial cross section, and (c) is a side cross-sectional view.

【図2】本発明の枠状ケース一体型絶縁性回路基板の上
面側からの外観図である。
FIG. 2 is an external view of the frame-shaped case-integrated insulative circuit board of the present invention seen from the upper surface side.

【図3】本発明の枠状ケース一体型絶縁性回路基板に電
子部品等を搭載した構造図であり、(a)は平面図、
(b)は一部断面を含む正面図、(c)は側面断面図で
ある。
FIG. 3 is a structural diagram in which electronic components and the like are mounted on a frame-shaped case-integrated insulating circuit board of the present invention, (a) is a plan view,
(B) is a front view including a partial cross section, and (c) is a side cross-sectional view.

【図4】(a)〜(c)は本発明の電力半導体装置の製
造工程を示す概略図である。
4A to 4C are schematic views showing a manufacturing process of the power semiconductor device of the present invention.

【図5】従来と本発明の電力半導体装置のアセンブリフ
ローチャートの対比図である。
FIG. 5 is a comparison diagram of assembly flowcharts of a conventional power semiconductor device and the present invention.

【図6】(a)〜(e)は従来例による電力半導体装置
の製造工程を示す概略図である。
6A to 6E are schematic views showing a manufacturing process of a conventional power semiconductor device.

【符号の説明】[Explanation of symbols]

1 入力側回路パターン 2 出力側回路パターン 3,4 外部入出力端子 5 枠状ケース 6 絶縁性回路基板 7 半導体素子 8,9,10 電子部品 1 Input side circuit pattern 2 Output side circuit pattern 3,4 External input / output terminal 5 Frame case 6 Insulating circuit board 7 Semiconductor element 8, 9, 10 Electronic parts

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 金属板よりなる回路パターンが内部に埋
め込まれた絶縁性回路基板と、 該絶縁性回路基板の周縁部から同一材質にて一体に立設
し、封止樹脂収容部の側壁となる枠状ケースと、 前記絶縁性回路基板の内部に埋め込まれた前記回路パタ
ーンと電気的接続を施した半導体素子を含む電子部品お
よび外部入出力端子と、 前記絶縁性回路基板と前記枠状ケースとで形成された凹
部に注入、硬化された封止樹脂と、 を備えてなることを特徴とする電力半導体装置。
1. An insulating circuit board in which a circuit pattern made of a metal plate is embedded, and an insulating circuit board and a side wall of a sealing resin accommodating portion, which are integrally erected from the peripheral portion of the insulating circuit board with the same material. A frame-shaped case, an electronic component and an external input / output terminal including a semiconductor element electrically connected to the circuit pattern embedded in the insulating circuit board, the insulating circuit board and the frame-shaped case A power semiconductor device, comprising: a sealing resin that is injected into the recess formed by and cured.
【請求項2】 前記外部入出力端子は、前記絶縁性回路
基板に埋め込まれた前記回路パターンと一体に形成さ
れ、該回路パターンに対して略90度の角度で折曲し、
前記枠状ケースの内部を通り、該枠状ケース外部に導出
したことを特徴とする請求項1記載の電力半導体装置。
2. The external input / output terminal is integrally formed with the circuit pattern embedded in the insulating circuit board, and is bent at an angle of about 90 degrees with respect to the circuit pattern,
The power semiconductor device according to claim 1, wherein the power semiconductor device passes through the inside of the frame-shaped case and is led out to the outside of the frame-shaped case.
JP7095047A 1995-04-20 1995-04-20 Power semiconductor device Expired - Fee Related JP2972112B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7095047A JP2972112B2 (en) 1995-04-20 1995-04-20 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7095047A JP2972112B2 (en) 1995-04-20 1995-04-20 Power semiconductor device

Publications (2)

Publication Number Publication Date
JPH08288441A true JPH08288441A (en) 1996-11-01
JP2972112B2 JP2972112B2 (en) 1999-11-08

Family

ID=14127158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7095047A Expired - Fee Related JP2972112B2 (en) 1995-04-20 1995-04-20 Power semiconductor device

Country Status (1)

Country Link
JP (1) JP2972112B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203940A (en) * 2001-01-04 2002-07-19 Mitsubishi Electric Corp Semiconductor power module
JP2014093303A (en) * 2012-10-31 2014-05-19 Daikin Ind Ltd Power module and power conversion device having the same
CN109548349A (en) * 2018-11-30 2019-03-29 中国工程物理研究院流体物理研究所 A kind of Gao Zhongying solid pulse power source integrates prototype devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203940A (en) * 2001-01-04 2002-07-19 Mitsubishi Electric Corp Semiconductor power module
JP4527292B2 (en) * 2001-01-04 2010-08-18 三菱電機株式会社 Semiconductor power module
JP2014093303A (en) * 2012-10-31 2014-05-19 Daikin Ind Ltd Power module and power conversion device having the same
CN109548349A (en) * 2018-11-30 2019-03-29 中国工程物理研究院流体物理研究所 A kind of Gao Zhongying solid pulse power source integrates prototype devices
CN109548349B (en) * 2018-11-30 2023-09-19 中国工程物理研究院流体物理研究所 High repetition frequency solid-state pulse power source integrated prototype device

Also Published As

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