JP2698278B2 - Hybrid integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly, to a hybrid integrated circuit device having improved insulation between an integrated circuit and an insulating metal substrate and between a heatsink.

[0002]

2. Description of the Related Art A conventional hybrid integrated circuit device will be described with reference to FIGS. FIG. 4 is a cross-sectional view illustrating the structure within the circle in FIG. A conventional hybrid integrated circuit device comprises a first insulating metal substrate (60), and a wire bonding pad (64) formed on the first insulating metal substrate (60) via a first insulating layer (62). , Conductive path (65), die bond pad (6
6), other circuit patterns including pads, semiconductor elements such as integrated circuit elements (68) fixed and mounted on die bond pads (66), chip capacitors or chip resistors (not shown), and external leads (70) And a case material (72) for hermetically sealing the second insulating metal substrate (90) mainly used for improving the insulating property and the mounted element.

The first and second insulating metal substrates (60) and (90) are made of aluminum having a thickness of about 2 mm in consideration of heat radiation characteristics and workability. It is processed. The first insulated metal substrate (60) is rectangular, and when the hybrid integrated circuit device is substantially completed, it is divided and pressed from the hybrid integrated circuit device substrate of several units to several tens of units to the size of the unit hybrid integrated circuit device. . The second insulated metal substrate (90) has substantially the same planar shape as the case material (72),
A coaxial hole (92) is formed at a position corresponding to the screw hole (74) of the case material (72) described later.

The various pads (64) (66) and the conductive path (65)
A thermosetting insulating resin having adhesiveness such as a polyimide resin and a clad material of a copper foil having a thickness of about 35 μm are heated at a temperature of 150 ° C. to 1 ° C.
After hot pressing the first insulating metal substrate (60) at 70 ° C. and a pressure of 50 to 100 kg per square centimeter,
The copper foil is formed into a predetermined pattern by photo-etching or the like. The thermosetting insulating resin is completely cured in this hot pressing step, and the first insulating layer (6
2).

[0005] Chip components are used for semiconductor elements such as the integrated circuit element (68) and other circuit elements, and the integrated circuit element (68) is fixed to the die bond pad (66) with silver paste or the like. In addition, odd-shaped components such as chip capacitors, chip resistors, and external leads (70) are fixed by soldering. These circuit elements are temporarily attached to a solder paste screen-printed on a predetermined pad (66), and then reflowed to be completely fixed.

The case material (72) is, for example, formed by injection molding a fiberglass rain hose PET (FRPET) into a substantially box shape. Usually, a hybrid integrated circuit device is connected to a heat radiating plate at the longitudinal end. A screw hole (74) is provided. The case material (72) is heated and pressed (125 ° C., 8 hours) using an epoxy impregnated polyester non-woven cloth as an adhesive sheet, and is fixed at the end of the first insulating metal substrate (60). Is sealed. Thereafter, a first insulating metal substrate is formed by a second insulating layer (94) such as a thermosetting insulating resin or a silicon resin.
A second insulating metal substrate (90) is adhered to the back surface of (60). The second insulating layer (94) achieves high insulation between the heat sink and the circuit on the first insulating metal substrate (60).

[0007]

The conventional hybrid integrated circuit device has a structure in which the surfaces of first and second insulating metal substrates (60) and (90) are anodized and the first and second insulating layers are provided. (6
2) Although considerable insulation strength is obtained by (94),
Further, there is a demand for a high breakdown voltage structure suitable for high voltage applications.

Although the distance between the end face of the first insulated metal substrate (60) and the screw hole (74) for connecting the hybrid integrated circuit device to the heat sink is designed to be large, a high withstand voltage is achieved. There is a problem that the demand for miniaturization cannot be met. Accordingly, an object of the present invention is to provide a small-sized hybrid integrated circuit device having a high withstand voltage structure.

[0009]

Means for Solving the Problems The invention of claim 1 is the second invention.
The main feature is that a bush hole for a screw to be connected to the heat sink is formed in the insulating metal substrate, and the bush is pressed into the bush hole. The main feature of the invention of claim 2 is that a resin reservoir is formed on a wall of a case material for sealing the mounted circuit element of the first insulating metal substrate.

The invention according to claim 3 is characterized in that a resin reservoir is formed on a wall of a case member immediately adjacent to a screw hole connected to a heat sink.

[0011]

A bush hole for a screw to be connected to a heat sink is formed in the second insulating metal substrate, and the bush is press-fitted into the bush hole. The section is insulated and insulated between the circuit on the first insulated metal substrate and the second insulated metal substrate.

The resin reservoir is formed on the wall of the case material for sealing the mounted circuit element of the first insulating metal substrate. The resin reservoir penetrates the resin into the end surface of the first insulating metal substrate and the second insulating metal substrate. The section of the screw hole of the insulating metal substrate of No. 2 is insulated. 4. The structure according to claim 3, wherein the resin reservoir is formed on the wall of the case material immediately adjacent to the screw hole connected to the heat sink, by means of a simpler structure and process. It is possible to insulate the cross section of the hole.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing a structure corresponding to the structure in the circle of the conventional example shown in FIG. A hybrid integrated circuit device according to the present invention comprises a first insulating metal substrate (10) on which a semiconductor element and other circuit elements are mounted;
The case material (20) for sealing the mounting element of (10) is mainly composed of a second insulating metal substrate (40) used for improving insulation.

The first and second insulating metal substrates (10) and (40) are made of aluminum having a thickness of about 2 mm in consideration of heat radiation characteristics and workability. It is processed. The first insulated metal substrate (10) is rectangular, and when the hybrid integrated circuit device is substantially completed, it is divided and pressed from the hybrid integrated circuit device substrate of several to several tens of units to the size of the unit hybrid integrated circuit device. . The second insulated metal substrate (40) has substantially the same planar shape as the case material (20),
The area is larger than that of the first insulating metal substrate (10).

The wire bonding pad (14), die bond pad (16), other pads and conductive paths (not shown) are made of an adhesive thermosetting insulating resin such as a polyimide resin and a copper foil having a thickness of about 35 μm. Clad material at temperature 15
0 ° C to 170 ° C, 50 to 10 per square centimeter
After hot-pressing the first insulating metal substrate (10) at a pressure of 0 kg, the copper foil is formed into a predetermined pattern by photo-etching or the like. The thermosetting insulating resin is completely cured in this hot pressing step to form an insulating layer having a thickness of about 35 μm.
(12).

Chip components are used for semiconductor elements such as the integrated circuit element (18) and other circuit elements, and are fixed to predetermined pads (16) with silver paste or the like. Further, odd-shaped components such as a chip capacitor, a chip resistor, and external leads (both not shown) are fixed by soldering. These circuit elements are screen-printed with solder paste on predetermined pads, temporarily attached thereto, and then reflowed to be completely fixed.

The case material (20) is obtained by injection molding a fiberglass rain hose PET (FRPET) into a substantially box shape. The wall (26) of the case material (20) is used as a first insulated metal substrate using an epoxy impregnated polyester non-woven cloth as an adhesive sheet.
After heat-pressing (125 ° C., 8 hours) around the periphery of (10) to seal the mounting element on the first insulating metal substrate (10), the second element made of silicon resin or ordinary thermosetting resin is used. The second insulating metal substrate (40) is fixed to the surface of the first insulating metal substrate (10) opposite to the surface on which the integrated circuit element is mounted by the insulating layer (44).

The case material (20) includes a first insulating metal substrate (10).
A screw hole (22) for coupling the hybrid integrated circuit device to a heat sink is formed in the immediate vicinity of the end in the longitudinal direction, and a bush hole having a larger diameter than the screw hole (22) is formed below the screw hole (22). In addition, steps (34) for positioning the second insulated metal substrate (40) are formed on a plurality of lower sides of the case material (20).
On the other hand, the second insulating metal substrate (40) has the first insulating metal substrate.
A bush hole (42) is formed at a position corresponding to the screw hole (22) or the bush hole of (10), and the second insulating metal substrate (40) is formed.
As a result, the screw hole (22) of the case material (20) and the bush hole (42) of the second insulating metal substrate (40) are coaxially arranged.

The bush (50) having the screw hole (52) is made of fluorocarbon resin to have a somewhat larger diameter than the bush hole (42) of the second insulating metal substrate (40), and the second insulating metal substrate (40). And pressed into the bush hole (42).
In the present embodiment configured as described above, the bush (50) covers the cross section of the bush hole (42) of the second insulating metal substrate (40). High insulation between the circuit and the second insulating metal substrate (40) is ensured. Also, the creepage distance between the circuit and the screw on the first insulating metal substrate (10) increases. For this reason, the distance between the end of the first insulating metal substrate (10) and the screw hole (22) of the case material (20) can be shortened, and the miniaturization of the hybrid integrated circuit device is achieved.

A second embodiment of the present invention will be described with reference to FIG. FIG. 2 also shows a cross-sectional view of a structure corresponding to the structure in the circle of the conventional example shown in FIG. 4, and the same reference numerals are used for the portions corresponding to the previous embodiment. In the present embodiment, a groove used as a resin reservoir is formed on the wall (26) of the case material (20).
(28) is formed, the first insulated metal substrate (10) and the case material (2
Immediately before the thermocompression bonding of (0), a fluid thermosetting resin (48) is applied to the groove (28) by an appropriate means. Then, in the state shown in the figure, at the time of heat treatment for fixing the first and second insulating metal substrates (10) and (40), the thermosetting resin (48) applied to the groove (28) becomes the first.
And penetrates into the gap between the second insulating metal substrate (10) (40) and the case material (20) and cures, and the end of the first insulating metal substrate (10) and the second insulating metal substrate (40). ) Completely covers the cross section of the bush hole (42). In addition, the groove (28) of the case material (20) is
It is sufficient if it is formed at a part of the position close to 2).

FIG. 2 shows a large gap between the first and second insulating metal substrates (10) and (40) and the case material (20) for the sake of explanation. Insulated metal substrate (10)
Since the creeping discharge between the upper circuit and the second insulating metal substrate (40) or between the screw (not shown) is prevented, the substrate size of the first insulating metal substrate (10) and the second insulating metal substrate (40) is reduced. Can be made almost the same, and a very small hybrid integrated circuit can be obtained.

[0022]

As described above, in the hybrid integrated circuit device according to the present invention, a bush hole for a screw to be connected to a heat sink is formed in a second insulating metal substrate, and a bush is pressed into this bush hole. Therefore, the cross section of the bush hole of the second insulated metal substrate is insulated and covered, and the sizes of the first and second insulated metal substrates can be made substantially the same. As a result, downsizing is achieved.

Further, since the resin reservoir is formed on the wall of the case material for sealing the mounted circuit element of the first insulating metal substrate, the end surface of the first insulating metal substrate and the second insulating substrate are formed by the penetration of the resin in the resin reservoir. The cross section of the screw hole of the metal substrate can be covered by insulation. As a result, downsizing is achieved. Furthermore, since a resin reservoir is formed on the wall of the case material immediately adjacent to the screw hole to be connected to the heat sink, the first case material structure and process can be simplified.
It becomes possible to insulate the end face of the insulating metal substrate and the cross section of the screw hole of the second insulating metal substrate.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a first embodiment.

FIG. 2 is a sectional view of a main part of a second embodiment.

FIG. 3 is a perspective view of a conventional example shown with a part cut away.

FIG. 4 is a sectional view of a main part of a conventional example.

[Explanation of symbols]

 Reference Signs List 10 first insulating metal substrate 12 first insulating layer 14 wire bonding pad 16 die bond pad 20 case material 22 screw hole 40 second insulating metal substrate 42 bush hole 44 second insulating layer 50 bush 52 screw hole

Claims (3)

(57) [Claims] A first insulating metal substrate on which a plurality of integrated circuit elements are fixed and mounted on a circuit pattern; and a screw hole for connecting a hybrid integrated circuit device to a heat sink. A case material for sealing the mounted circuit element of the substrate; and a bush hole formed at a position corresponding to the screw hole of the case material, and an insulating adhesive bonded to a surface of the first insulated metal substrate opposite to the integrated circuit element mounting surface. A hybrid integrated circuit device comprising: a second insulating metal substrate fixed by an agent; and a bush pressed into a bush hole of the second insulating metal substrate. 2. A first insulating metal substrate, comprising: a first insulating metal substrate having a plurality of integrated circuit elements fixed and mounted on a circuit pattern; and a screw hole for connecting the hybrid integrated circuit device to a heat sink. A case material in which a resin reservoir is formed on a wall for sealing the mounted circuit element, and a second insulating metal fixed to the surface of the first insulating metal substrate opposite to the integrated circuit element mounting surface with an insulating adhesive. A hybrid integrated circuit device comprising a substrate, wherein an end of the first insulating metal substrate is covered with a resin that penetrates from a resin reservoir of the case material. 3. A first insulating metal substrate comprising: a first insulating metal substrate having a plurality of integrated circuit elements fixed and mounted on a circuit pattern; and a screw hole for connecting the hybrid integrated circuit device to a heat sink. A case member having a resin reservoir formed in the vicinity of the screw hole on the wall for sealing the mounted circuit element, and an insulating adhesive fixed to a surface of the first insulating metal substrate opposite to the integrated circuit element mounting surface. A hybrid integrated circuit device comprising a second insulating metal substrate.