JP4522709B2 - 基板を被覆する方法および装置 - Google Patents
基板を被覆する方法および装置 Download PDFInfo
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- JP4522709B2 JP4522709B2 JP2003569889A JP2003569889A JP4522709B2 JP 4522709 B2 JP4522709 B2 JP 4522709B2 JP 2003569889 A JP2003569889 A JP 2003569889A JP 2003569889 A JP2003569889 A JP 2003569889A JP 4522709 B2 JP4522709 B2 JP 4522709B2
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- evaporated
- coil
- electromagnetic field
- substrate
- evaporating
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- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 109
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 230000005674 electromagnetic induction Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Electric Cables (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
Claims (16)
- バックグラウンド圧力の低い空間の中で或る量の電気伝導性の材料を蒸発させ、蒸発させるべき材料に対してエネルギーを供給して該材料を蒸発させることにより金属の層で基板を被覆し、この際蒸発させるべき材料を蒸発させる際、該空間の中で支持物なしで該材料を浮遊状態に保ち、高周波の交流電流をコイルに通すことによって発生させた交流電磁界の中に該材料を閉じ込める方法において、基板を細片の形で該空間の中に通し、基板を材料の層で連続的に被覆し、時間の経過と共に蒸発させるべき材料の追加量で蒸発される材料を充満させ、該コイルから分離された補助コイルによって得られる交流電磁界の分離された区域で蒸発させるべき材料が取り込まれるようにコイルの交流電磁界の形がつくられることを特徴とする方法。
- 交流電流の周波数は10kHz以上、好ましくは50kHzx以上、もっと好ましくは250kHz以上、さらにもっと好ましくは1MHz以上、それよりも好ましくは1.5MHz以上である、請求項1に記載の方法。
- 交流電磁界は、電流の強さが200A以上、好ましくは500A以上、さらに好ましくは1kA以上、もっと好ましくは4kA以上の交流電流により発生させる、請求項1または2に記載の方法。
- 浮遊する材料の中で消費される電力は少なくとも2kW、好ましくは少なくとも5kW、さらに好ましくは少なくとも10kWである、請求項1〜3のいずれか一項に記載の方法。
- 蒸発させるべき材料を電磁誘導加熱法を用いて加熱する、請求項1〜4のいずれか一項に記載の方法。
- レーザー・ビームおよび/または電子衝撃および/または誘導結合プラズマおよび/または抵抗加熱を用いる方法により蒸発させるべき材料を加熱する、請求項1〜5のいずれか一項に記載された方法。
- 取り込まれるべき材料は該空間の中を自由に流れてはいない、請求項1〜6のいずれか一項に記載の方法。
- チタン、マグネシウム、錫、亜鉛、クロム、ニッケル、またはアルミニウム、或いはこれらの金属の1種とこれらまたは他の金属を含む1種またはそれ以上の他の材料との混合物を蒸発させる、請求項1〜7のいずれか一項に記載された方法。
- 電気伝導性の材料を蒸発させることにより金属の層で基板を被覆する装置において、該装置は一つの室を具備し、該室はその中に低いバックグラウンド圧力を生じる装置、蒸発させるべき材料を受け取る装置、および蒸発させるべき材料を加熱する装置を備え、蒸発させるべき材料を受け取る装置は、蒸発させるべき材料を支持物なしで浮遊させ得るための交流電磁界を発生するのに使用できるコイルを具備しており、ここで該室の中の蒸発空間からコイルを分離する装置が存在し、該分離装置はセラミックス管を含んで成っており、使用中蒸発される材料を充満させるために、蒸発させるべき材料を針金の形で供給する供給装置が備えられ、該供給装置が該コイルから分離された補助コイルによって得られる交流電磁界の分離された区域を含むことを特徴とする装置。
- 該コイルは、高周波の交流電流により交流電磁界を発生させるように設計されていることを特徴とする請求項9に記載の装置。
- 材料を加熱する装置は電磁誘導コイルを具備している、請求項9または10に記載の装置。
- 材料を加熱する装置はレーザーおよび/または電子の発生源を具備している、請求項9〜11のいずれか一項に記載の装置。
- 該分離装置はセラミックス材料からつくられている、請求項9〜12のいずれか一項に記載された装置。
- 該室の中に測定装置が配置されている、請求項9〜13のいずれか一項に記載された装置。
- 該測定装置は温度を測定するのに適している、請求項14に記載の装置。
- 請求項1〜8のいずれか一項に記載された方法を実施するのに適した、請求項9〜15のいずれか一項に記載された装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL1020059A NL1020059C2 (nl) | 2002-02-21 | 2002-02-21 | Werkwijze en inrichting voor het bekleden van een substraat. |
PCT/NL2003/000139 WO2003071000A1 (en) | 2002-02-21 | 2003-02-21 | Method and device for coating a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005523381A JP2005523381A (ja) | 2005-08-04 |
JP4522709B2 true JP4522709B2 (ja) | 2010-08-11 |
Family
ID=27752086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003569889A Expired - Fee Related JP4522709B2 (ja) | 2002-02-21 | 2003-02-21 | 基板を被覆する方法および装置 |
Country Status (15)
Country | Link |
---|---|
US (1) | US7323229B2 (ja) |
EP (1) | EP1483425B1 (ja) |
JP (1) | JP4522709B2 (ja) |
KR (1) | KR100956491B1 (ja) |
CN (1) | CN100545299C (ja) |
AT (1) | ATE399889T1 (ja) |
AU (1) | AU2003221458A1 (ja) |
BR (1) | BR0307800B1 (ja) |
CA (1) | CA2476855C (ja) |
DE (1) | DE60321893D1 (ja) |
ES (1) | ES2309305T3 (ja) |
HK (1) | HK1078616A1 (ja) |
NL (1) | NL1020059C2 (ja) |
RU (1) | RU2316611C2 (ja) |
WO (1) | WO2003071000A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004080640A1 (en) * | 2003-03-14 | 2004-09-23 | Hille & Müller GMBH | Aluminium layered brazing product and method of its manufacture |
ZA200701534B (en) | 2004-08-23 | 2008-10-29 | Corus Technology Bv | Apparatus and method for levitation of an amount of conductive material |
EP1785010B1 (en) * | 2004-08-23 | 2009-04-08 | Corus Technology BV | Apparatus and method for levitation of an amount of conductive material |
JP5394061B2 (ja) * | 2005-05-31 | 2014-01-22 | タタ、スティール、ネダーランド、テクノロジー、ベスローテン、フェンノートシャップ | 基材を被覆する装置および方法 |
US7524385B2 (en) * | 2006-10-03 | 2009-04-28 | Elemetric, Llc | Controlled phase transition of metals |
KR100961371B1 (ko) | 2007-12-28 | 2010-06-07 | 주식회사 포스코 | 실러 접착성 및 내식성이 우수한 아연계 합금도금강판과 그제조방법 |
KR101639813B1 (ko) * | 2009-10-08 | 2016-07-15 | 주식회사 포스코 | 연속 코팅 장치 |
US9267203B2 (en) * | 2010-12-13 | 2016-02-23 | Posco | Continuous coating apparatus |
KR101207719B1 (ko) * | 2010-12-27 | 2012-12-03 | 주식회사 포스코 | 건식 코팅 장치 |
RU2522666C2 (ru) * | 2012-06-27 | 2014-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Юго-Западный государственный университет" (ЮЗГУ) | Устройство для левитации некоторого количества материала |
KR101355817B1 (ko) * | 2012-07-09 | 2014-02-05 | 한국표준과학연구원 | 전자기 부양 금속 박막 증착 장치 |
RU2693852C2 (ru) * | 2017-11-07 | 2019-07-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования " Юго-Западный государственный университет" (ЮЗГУ) | Устройство для левитации некоторого количества материала |
KR102098455B1 (ko) * | 2017-12-26 | 2020-04-07 | 주식회사 포스코 | 연속 증착 장치 및 연속 증착 방법 |
CN109518133A (zh) * | 2018-10-23 | 2019-03-26 | 集美大学 | 一种电磁加热的pvd设备及其生产工艺 |
CN112760608A (zh) * | 2020-12-14 | 2021-05-07 | 兰州空间技术物理研究所 | 碳纤维复合材料表面薄膜沉积过程防止层间放气的方法 |
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US2664852A (en) * | 1950-04-27 | 1954-01-05 | Nat Res Corp | Vapor coating apparatus |
US2957064A (en) * | 1958-09-30 | 1960-10-18 | Westinghouse Electric Corp | Stabilizing of levitation melting |
GB1206586A (en) * | 1966-09-07 | 1970-09-23 | Mini Of Technology | Vacuum deposition process of forming alloys |
BE713308A (ja) * | 1968-04-05 | 1968-10-07 | ||
DE2934011A1 (de) * | 1979-08-22 | 1981-03-26 | André Etienne de Dr. Lausanne Rudnay | Vorrichtung zum aufdampfen von elektrisch leitenden stoffen (metallen) im hochvakuum |
JPS621863A (ja) * | 1985-06-28 | 1987-01-07 | Ishikawajima Harima Heavy Ind Co Ltd | 金属蒸発装置 |
JP3563083B2 (ja) * | 1992-09-11 | 2004-09-08 | 真空冶金株式会社 | 超微粒子のガスデポジション方法及び装置 |
JPH07252639A (ja) * | 1994-03-15 | 1995-10-03 | Kao Corp | 金属薄膜体の製造方法 |
US5534314A (en) * | 1994-08-31 | 1996-07-09 | University Of Virginia Patent Foundation | Directed vapor deposition of electron beam evaporant |
JPH08104981A (ja) * | 1994-10-05 | 1996-04-23 | Sumitomo Electric Ind Ltd | Pvd装置 |
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US5736073A (en) * | 1996-07-08 | 1998-04-07 | University Of Virginia Patent Foundation | Production of nanometer particles by directed vapor deposition of electron beam evaporant |
DE19811816A1 (de) * | 1997-03-24 | 1998-10-01 | Fuji Electric Co Ltd | Verfahren zur Herstellung eines Elektrodenmaterials für Vakuum-Leistungsschalter |
CA2269632C (en) * | 1997-08-27 | 2003-09-02 | Josuke Nakata | Spherical semiconductor device and method of manufacturing same |
JPH1171605A (ja) * | 1997-08-29 | 1999-03-16 | Ishikawajima Harima Heavy Ind Co Ltd | 微粒子製造方法及び装置 |
EP1321545A1 (en) * | 2001-12-20 | 2003-06-25 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Method for producing particles with diamond structure |
-
2002
- 2002-02-21 NL NL1020059A patent/NL1020059C2/nl not_active IP Right Cessation
-
2003
- 2003-02-21 CN CNB038043181A patent/CN100545299C/zh not_active Expired - Fee Related
- 2003-02-21 KR KR1020047012566A patent/KR100956491B1/ko active IP Right Grant
- 2003-02-21 EP EP03710534A patent/EP1483425B1/en not_active Expired - Lifetime
- 2003-02-21 RU RU2004128083A patent/RU2316611C2/ru not_active IP Right Cessation
- 2003-02-21 BR BR0307800A patent/BR0307800B1/pt not_active IP Right Cessation
- 2003-02-21 AU AU2003221458A patent/AU2003221458A1/en not_active Abandoned
- 2003-02-21 ES ES03710534T patent/ES2309305T3/es not_active Expired - Lifetime
- 2003-02-21 WO PCT/NL2003/000139 patent/WO2003071000A1/en active Application Filing
- 2003-02-21 JP JP2003569889A patent/JP4522709B2/ja not_active Expired - Fee Related
- 2003-02-21 CA CA 2476855 patent/CA2476855C/en not_active Expired - Fee Related
- 2003-02-21 DE DE60321893T patent/DE60321893D1/de not_active Expired - Lifetime
- 2003-02-21 AT AT03710534T patent/ATE399889T1/de active
-
2004
- 2004-08-23 US US10/923,505 patent/US7323229B2/en not_active Expired - Fee Related
-
2005
- 2005-11-18 HK HK05110333A patent/HK1078616A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2004128083A (ru) | 2005-06-10 |
US7323229B2 (en) | 2008-01-29 |
EP1483425B1 (en) | 2008-07-02 |
US20050064110A1 (en) | 2005-03-24 |
KR100956491B1 (ko) | 2010-05-07 |
KR20040085192A (ko) | 2004-10-07 |
BR0307800B1 (pt) | 2012-09-04 |
BR0307800A (pt) | 2004-12-14 |
ATE399889T1 (de) | 2008-07-15 |
ES2309305T3 (es) | 2008-12-16 |
NL1020059C2 (nl) | 2003-08-25 |
RU2316611C2 (ru) | 2008-02-10 |
WO2003071000A1 (en) | 2003-08-28 |
JP2005523381A (ja) | 2005-08-04 |
CN1636077A (zh) | 2005-07-06 |
HK1078616A1 (en) | 2006-03-17 |
AU2003221458A1 (en) | 2003-09-09 |
EP1483425A1 (en) | 2004-12-08 |
CN100545299C (zh) | 2009-09-30 |
DE60321893D1 (de) | 2008-08-14 |
CA2476855A1 (en) | 2003-08-28 |
CA2476855C (en) | 2009-12-22 |
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