JP4511414B2 - 気化器 - Google Patents
気化器 Download PDFInfo
- Publication number
- JP4511414B2 JP4511414B2 JP2005146893A JP2005146893A JP4511414B2 JP 4511414 B2 JP4511414 B2 JP 4511414B2 JP 2005146893 A JP2005146893 A JP 2005146893A JP 2005146893 A JP2005146893 A JP 2005146893A JP 4511414 B2 JP4511414 B2 JP 4511414B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- flow path
- vaporization chamber
- vaporizer
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000006200 vaporizer Substances 0.000 title claims description 30
- 239000007788 liquid Substances 0.000 claims description 71
- 230000008016 vaporization Effects 0.000 claims description 52
- 238000009834 vaporization Methods 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 24
- 239000012159 carrier gas Substances 0.000 claims description 23
- 239000011344 liquid material Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 28
- 239000000203 mixture Substances 0.000 description 8
- 239000003595 mist Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
12… 中央ブロック
14,16… バルブ構成ブロック
18… 気化室
20… 液体流路
20b… 端部
22… ガス流路
24… 流量制御バルブ
26… 閉止バルブ
28… ヒータ
36,42… 弁座
38,44… ダイヤフラム
40,46… アクチュエータ
Claims (1)
- 略円柱状の内壁を有し、かつ、軸方向端部に吐出口を有する気化室と、前記気化室内へ液体原料を供給する液体流路と、前記液体流路に設けられ、前記気化室内への前記液体原料の供給量を制御する流量制御バルブと、前記液体流路へキャリアガスを供給するガス流路と、前記気化室の内壁を加熱するヒータとを備える、気化器であって、
前記ガス流路は、前記流量制御バルブの出口近傍において前記液体流路に接続されており、前記液体流路の前記気化室側の端部は、前記内壁の接線方向へ延びて形成されている、気化器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005146893A JP4511414B2 (ja) | 2005-05-19 | 2005-05-19 | 気化器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005146893A JP4511414B2 (ja) | 2005-05-19 | 2005-05-19 | 気化器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006322047A JP2006322047A (ja) | 2006-11-30 |
JP4511414B2 true JP4511414B2 (ja) | 2010-07-28 |
Family
ID=37541936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005146893A Active JP4511414B2 (ja) | 2005-05-19 | 2005-05-19 | 気化器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4511414B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5346532B2 (ja) * | 2008-09-29 | 2013-11-20 | 創研工業株式会社 | 気化器ユニット、これを用いる半導体処理システムおよび気化器に接続されるガス輸送管 |
JP5346538B2 (ja) * | 2008-10-07 | 2013-11-20 | 創研工業株式会社 | 流体加熱装置およびこれを利用した半導体処理装置 |
JP7402801B2 (ja) * | 2018-08-24 | 2023-12-21 | 株式会社堀場エステック | 気化器、液体材料気化装置、及び気化方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186103A (ja) * | 1994-12-28 | 1996-07-16 | Mitsubishi Electric Corp | 薄膜の堆積装置 |
JP2001217204A (ja) * | 1999-12-22 | 2001-08-10 | Hynix Semiconductor Inc | 半導体素子の銅金属配線形成方法 |
JP2003142468A (ja) * | 2002-10-08 | 2003-05-16 | Mitsubishi Electric Corp | 化学気相成長装置 |
-
2005
- 2005-05-19 JP JP2005146893A patent/JP4511414B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186103A (ja) * | 1994-12-28 | 1996-07-16 | Mitsubishi Electric Corp | 薄膜の堆積装置 |
JP2001217204A (ja) * | 1999-12-22 | 2001-08-10 | Hynix Semiconductor Inc | 半導体素子の銅金属配線形成方法 |
JP2003142468A (ja) * | 2002-10-08 | 2003-05-16 | Mitsubishi Electric Corp | 化学気相成長装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2006322047A (ja) | 2006-11-30 |
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