JP4510623B2 - 加熱チャンバの熱絶縁装置及び方法 - Google Patents

加熱チャンバの熱絶縁装置及び方法 Download PDF

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Publication number
JP4510623B2
JP4510623B2 JP2004522930A JP2004522930A JP4510623B2 JP 4510623 B2 JP4510623 B2 JP 4510623B2 JP 2004522930 A JP2004522930 A JP 2004522930A JP 2004522930 A JP2004522930 A JP 2004522930A JP 4510623 B2 JP4510623 B2 JP 4510623B2
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JP
Japan
Prior art keywords
chamber
substrate
interface
recess
boundary
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Expired - Fee Related
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JP2004522930A
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English (en)
Japanese (ja)
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JP2005534171A (ja
Inventor
エマニュエル ビアー
ケネス イー バウメル
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02—Controlled or contamination-free environments or clean space conditions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2004522930A 2002-07-24 2002-07-24 加熱チャンバの熱絶縁装置及び方法 Expired - Fee Related JP4510623B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/023799 WO2004010480A1 (en) 2002-07-24 2002-07-24 Apparatus and method for thermally isolating a heat chamber

Publications (2)

Publication Number Publication Date
JP2005534171A JP2005534171A (ja) 2005-11-10
JP4510623B2 true JP4510623B2 (ja) 2010-07-28

Family

ID=30769034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004522930A Expired - Fee Related JP4510623B2 (ja) 2002-07-24 2002-07-24 加熱チャンバの熱絶縁装置及び方法

Country Status (3)

Country Link
JP (1) JP4510623B2 (zh)
CN (1) CN100428400C (zh)
WO (1) WO2004010480A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7354845B2 (en) 2004-08-24 2008-04-08 Otb Group B.V. In-line process for making thin film electronic devices
JP4672538B2 (ja) * 2005-12-06 2011-04-20 東京エレクトロン株式会社 加熱処理装置
CA2552327C (en) 2006-07-13 2014-04-15 Mackenzie Millar Method for selective extraction of natural gas liquids from "rich" natural gas
ITMI20070350A1 (it) * 2007-02-23 2008-08-24 Univ Milano Bicocca Metodo di lavorazine a plasma atmosferico per il trattamento dei materiali
EP2293321A1 (en) * 2009-09-08 2011-03-09 Applied Materials, Inc. Mechanical modularity chambers
CA2763081C (en) 2011-12-20 2019-08-13 Jose Lourenco Method to produce liquefied natural gas (lng) at midstream natural gas liquids (ngls) recovery plants.
CA2772479C (en) 2012-03-21 2020-01-07 Mackenzie Millar Temperature controlled method to liquefy gas and a production plant using the method.
CA2790961C (en) 2012-05-11 2019-09-03 Jose Lourenco A method to recover lpg and condensates from refineries fuel gas streams.
CA2787746C (en) 2012-08-27 2019-08-13 Mackenzie Millar Method of producing and distributing liquid natural gas
CA2798057C (en) 2012-12-04 2019-11-26 Mackenzie Millar A method to produce lng at gas pressure letdown stations in natural gas transmission pipeline systems
CA2813260C (en) 2013-04-15 2021-07-06 Mackenzie Millar A method to produce lng
CA2958091C (en) 2014-08-15 2021-05-18 1304338 Alberta Ltd. A method of removing carbon dioxide during liquid natural gas production from natural gas at gas pressure letdown stations
US11173445B2 (en) 2015-09-16 2021-11-16 1304338 Alberta Ltd. Method of preparing natural gas at a gas pressure reduction stations to produce liquid natural gas (LNG)
CN107316824B (zh) * 2016-04-22 2020-10-16 北京北方华创微电子装备有限公司 半导体集成加工设备和半导体加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866926A (en) * 1973-03-19 1975-02-18 Mccord Corp Carburetor gasket
NL8900544A (nl) * 1989-03-06 1990-10-01 Asm Europ Behandelingsstelsel, behandelingsvat en werkwijze voor het behandelen van een substraat.
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
JPH07201753A (ja) * 1993-12-29 1995-08-04 Nippon Steel Corp 薄膜製造方法およびその装置
KR960002534A (ko) * 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
JP3011366B2 (ja) * 1995-10-26 2000-02-21 株式会社ノリタケカンパニーリミテド 膜形成素材を含む基板の焼成方法および装置
JP4067633B2 (ja) * 1998-03-06 2008-03-26 東京エレクトロン株式会社 処理装置
US6284006B1 (en) * 1999-11-15 2001-09-04 Fsi International, Inc. Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus

Also Published As

Publication number Publication date
CN100428400C (zh) 2008-10-22
CN1639838A (zh) 2005-07-13
WO2004010480A1 (en) 2004-01-29
JP2005534171A (ja) 2005-11-10

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