JP4497650B2 - レーザ発振装置、露光装置および半導体デバイス製造方法 - Google Patents

レーザ発振装置、露光装置および半導体デバイス製造方法 Download PDF

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Publication number
JP4497650B2
JP4497650B2 JP2000126502A JP2000126502A JP4497650B2 JP 4497650 B2 JP4497650 B2 JP 4497650B2 JP 2000126502 A JP2000126502 A JP 2000126502A JP 2000126502 A JP2000126502 A JP 2000126502A JP 4497650 B2 JP4497650 B2 JP 4497650B2
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Japan
Prior art keywords
oscillation
wavelength
laser
exposure
oscillation wavelength
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Expired - Fee Related
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JP2000126502A
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English (en)
Japanese (ja)
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JP2001307997A5 (enExample
JP2001307997A (ja
Inventor
善之 永井
直人 佐野
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000126502A priority Critical patent/JP4497650B2/ja
Priority to US09/839,139 priority patent/US6870865B2/en
Priority to DE60121098T priority patent/DE60121098T2/de
Priority to EP01303730A priority patent/EP1158629B1/en
Publication of JP2001307997A publication Critical patent/JP2001307997A/ja
Priority to US10/930,745 priority patent/US7145925B2/en
Publication of JP2001307997A5 publication Critical patent/JP2001307997A5/ja
Application granted granted Critical
Publication of JP4497650B2 publication Critical patent/JP4497650B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/104—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000126502A 2000-04-26 2000-04-26 レーザ発振装置、露光装置および半導体デバイス製造方法 Expired - Fee Related JP4497650B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000126502A JP4497650B2 (ja) 2000-04-26 2000-04-26 レーザ発振装置、露光装置および半導体デバイス製造方法
US09/839,139 US6870865B2 (en) 2000-04-26 2001-04-23 Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
DE60121098T DE60121098T2 (de) 2000-04-26 2001-04-24 Lasersteuervorrichtung, Belichtungsapparat und Verfahren zur Herstellung einer Halbleitervorrichtung
EP01303730A EP1158629B1 (en) 2000-04-26 2001-04-24 Laser control apparatus, exposure apparatus and semiconductor device manufacturing method
US10/930,745 US7145925B2 (en) 2000-04-26 2004-09-01 Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000126502A JP4497650B2 (ja) 2000-04-26 2000-04-26 レーザ発振装置、露光装置および半導体デバイス製造方法

Publications (3)

Publication Number Publication Date
JP2001307997A JP2001307997A (ja) 2001-11-02
JP2001307997A5 JP2001307997A5 (enExample) 2007-06-14
JP4497650B2 true JP4497650B2 (ja) 2010-07-07

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JP2000126502A Expired - Fee Related JP4497650B2 (ja) 2000-04-26 2000-04-26 レーザ発振装置、露光装置および半導体デバイス製造方法

Country Status (4)

Country Link
US (2) US6870865B2 (enExample)
EP (1) EP1158629B1 (enExample)
JP (1) JP4497650B2 (enExample)
DE (1) DE60121098T2 (enExample)

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JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
KR100624081B1 (ko) 2002-01-31 2006-09-19 캐논 가부시끼가이샤 레이저장치, 노광장치 및 노광방법
JP2005191503A (ja) * 2003-12-26 2005-07-14 Canon Inc レーザ装置、露光方法及び装置
JP5457873B2 (ja) * 2010-02-18 2014-04-02 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
WO2014038584A1 (ja) * 2012-09-07 2014-03-13 ギガフォトン株式会社 レーザ装置及びレーザ装置の制御方法
JP6223014B2 (ja) * 2013-06-26 2017-11-01 キヤノン株式会社 被検体情報取得装置
JP6585174B2 (ja) 2015-08-07 2019-10-02 ギガフォトン株式会社 狭帯域化レーザ装置
JP6595012B2 (ja) * 2016-02-02 2019-10-23 ギガフォトン株式会社 狭帯域化レーザ装置
US10234220B2 (en) 2017-04-14 2019-03-19 Kent J. Myers Detachable box magazine with follower retraction member
US10480878B2 (en) 2017-04-14 2019-11-19 Kent J Myers Detachable box magazine with follower retraction member
US10480877B1 (en) 2017-04-14 2019-11-19 Kent J. Myers Detachable box magazine with follower retraction member
WO2020157839A1 (ja) 2019-01-29 2020-08-06 ギガフォトン株式会社 レーザ装置の波長制御方法及び電子デバイスの製造方法
US11581692B2 (en) 2019-06-18 2023-02-14 KLA Corp. Controlling pressure in a cavity of a light source
JP7573429B2 (ja) 2020-12-10 2024-10-25 株式会社ミツトヨ レーザ装置、及び波長異常検出方法
CN113904213B (zh) * 2021-12-08 2022-04-01 杭州拓致光电科技有限公司 一种基于光热折变玻璃的多波长锁波器及其制备方法

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EP0183827B1 (en) 1984-06-21 1991-08-28 AT&T Corp. Deep-uv lithography
WO1989000779A1 (fr) * 1987-07-17 1989-01-26 Kabushiki Kaisha Komatsu Seisakusho Dispositif de regulation de la longueur d'onde d'un rayon laser
JPH01106426A (ja) * 1987-10-19 1989-04-24 Canon Inc 露光装置
JP2711667B2 (ja) * 1988-01-27 1998-02-10 株式会社小松製作所 狭帯域エキシマレーザの起動方法及び装置
WO1989007353A1 (fr) * 1988-01-27 1989-08-10 Kabushiki Kaisha Komatsu Seisakusho Procede et dispositif de commande d'un laser excimeur a oscillation a bande etroite
JP2557691B2 (ja) * 1988-07-29 1996-11-27 株式会社小松製作所 狭帯域発振エキシマレーザ
JPH04223386A (ja) * 1990-12-25 1992-08-13 Mitsubishi Electric Corp 狭帯域エキシマレーザ発振器
JPH0513862A (ja) * 1991-07-02 1993-01-22 Mitsubishi Electric Corp レーザー装置
JPH05312646A (ja) 1992-05-15 1993-11-22 Mitsubishi Electric Corp 波長測定装置およびこれを搭載したレーザ装置
US5420877A (en) * 1993-07-16 1995-05-30 Cymer Laser Technologies Temperature compensation method and apparatus for wave meters and tunable lasers controlled thereby
JP2631080B2 (ja) * 1993-10-05 1997-07-16 株式会社小松製作所 レーザ装置の出力制御装置
JPH07120326A (ja) * 1993-10-22 1995-05-12 Komatsu Ltd 波長検出装置
JPH08274399A (ja) * 1995-04-03 1996-10-18 Komatsu Ltd パルスレーザ装置のパルスエネルギ制御装置と方法
JP3402850B2 (ja) * 1995-05-09 2003-05-06 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
JP3782486B2 (ja) * 1995-06-21 2006-06-07 キヤノン株式会社 レーザ出力制御装置、露光装置およびデバイス製造方法
JPH097927A (ja) * 1995-06-26 1997-01-10 Canon Inc 照明装置及び露光装置
JPH10173274A (ja) * 1996-12-12 1998-06-26 Komatsu Ltd エキシマレーザ装置
US6078599A (en) * 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
JP3697036B2 (ja) * 1997-10-03 2005-09-21 キヤノン株式会社 露光装置及びそれを用いた半導体製造方法
JP2002525856A (ja) * 1998-09-11 2002-08-13 ニュー・フォーカス・インコーポレイテッド 波長可変レーザ
JP2001148344A (ja) * 1999-09-09 2001-05-29 Nikon Corp 露光装置、エネルギ源の出力制御方法、該方法を用いるレーザ装置、及びデバイス製造方法
JP2001196679A (ja) * 2000-01-12 2001-07-19 Komatsu Ltd 狭帯域化レーザ装置及びその波長制御装置
JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
US6813287B2 (en) * 2001-03-29 2004-11-02 Gigaphoton Inc. Wavelength control device for laser device
KR100624081B1 (ko) * 2002-01-31 2006-09-19 캐논 가부시끼가이샤 레이저장치, 노광장치 및 노광방법

Also Published As

Publication number Publication date
US7145925B2 (en) 2006-12-05
US6870865B2 (en) 2005-03-22
US20010036207A1 (en) 2001-11-01
EP1158629A2 (en) 2001-11-28
DE60121098D1 (de) 2006-08-10
DE60121098T2 (de) 2007-05-31
EP1158629B1 (en) 2006-06-28
EP1158629A3 (en) 2004-01-02
US20050030987A1 (en) 2005-02-10
JP2001307997A (ja) 2001-11-02

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