JP4497447B2 - パルス状直流スパッタ成膜方法及び該方法のための成膜装置 - Google Patents

パルス状直流スパッタ成膜方法及び該方法のための成膜装置 Download PDF

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Publication number
JP4497447B2
JP4497447B2 JP2003055286A JP2003055286A JP4497447B2 JP 4497447 B2 JP4497447 B2 JP 4497447B2 JP 2003055286 A JP2003055286 A JP 2003055286A JP 2003055286 A JP2003055286 A JP 2003055286A JP 4497447 B2 JP4497447 B2 JP 4497447B2
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film
duty ratio
pulsed
substrate
sputtering
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JP2004266112A (ja
JP2004266112A5 (https=
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成史 五戸
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Ulvac Inc
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Ulvac Inc
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JP2003055286A 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置 Expired - Lifetime JP4497447B2 (ja)

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JP2003055286A JP4497447B2 (ja) 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

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JP2003055286A JP4497447B2 (ja) 2003-03-03 2003-03-03 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

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JP2009165987A Division JP4613243B2 (ja) 2009-07-14 2009-07-14 パルス状直流スパッタ成膜方法及び該方法のための成膜装置

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JP2004266112A JP2004266112A (ja) 2004-09-24
JP2004266112A5 JP2004266112A5 (https=) 2006-03-09
JP4497447B2 true JP4497447B2 (ja) 2010-07-07

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007308727A (ja) * 2006-05-16 2007-11-29 Bridgestone Corp 結晶性薄膜の成膜方法
EP2102889B1 (en) * 2006-12-12 2020-10-07 Evatec AG Rf substrate bias with high power impulse magnetron sputtering (hipims)
JP5058642B2 (ja) * 2007-03-26 2012-10-24 財団法人神奈川科学技術アカデミー 半導体基板の製造方法
US8691058B2 (en) * 2008-04-03 2014-04-08 Oerlikon Advanced Technologies Ag Apparatus for sputtering and a method of fabricating a metallization structure
JP6329839B2 (ja) 2014-07-29 2018-05-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN106811726A (zh) * 2015-11-30 2017-06-09 北京北方微电子基地设备工艺研究中心有限责任公司 溅射沉积工艺及溅射沉积设备
KR20190132667A (ko) * 2017-04-03 2019-11-28 가부시키가이샤 아루박 막형성 장치 및 막형성 방법
JP7762853B2 (ja) * 2020-07-03 2025-10-31 パナソニックＩｐマネジメント株式会社 スパッタ装置およびスパッタ方法
CN117418208B (zh) * 2023-08-10 2025-03-07 等离子体装备科技(广州)有限公司 连接器镀膜方法及其制备工艺

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684539B2 (ja) * 1984-12-25 1994-10-26 日電アネルバ株式会社 スパッタリングによる薄膜形成方法
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
JP2598062B2 (ja) * 1988-01-29 1997-04-09 株式会社日立製作所 基板バイアス方式のマグネトロンスパッタリング方法及びその装置
US6193855B1 (en) * 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage

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