JP4492878B2 - ドナー基板,有機電界発光表示装置の製造方法 - Google Patents
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Description
13,23 光熱変換層パターン
15,25,35 反射層
17,27,37 中間層
19,29,39 転写層
20a 陥凹部
31 反射層パターン
33 光熱変換層
A1,A2,A3 アクセプタ基板
D1,D2,D3 ドナー基板
S1,S2,S3 選択的発熱構造体
Claims (18)
- ベース基板と;
前記ベース基板上に配される転写層と;
前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域と前記発熱領域に隣接する非発熱領域とを有する選択的発熱構造体と;
を備え,
前記選択的発熱構造体は,
前記ベース基板の一部の領域に選択的に配され,かつ前記発熱領域を定める光熱変換層パターンと;
前記光熱変換層パターンを覆うように前記ベース基板に配される反射層と;
を有することを特徴とするドナー基板。 - 前記反射層は,さらに前記光熱変換層パターンの側部を覆いながら前記ベース基板に接触さして配されることを特徴とする,請求項1に記載のドナー基板。
- 前記選択的発熱構造体と前記転写層との間に介在される中間層をさらに備えることを特徴とする,請求項1に記載のドナー基板。
- 陥凹部を有するベース基板と;
前記ベース基板上に配される転写層と;
前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域と前記発熱領域に隣接する非発熱領域とを有する選択的発熱構造体と;
を備え,
前記選択的発熱構造体は,
前記陥凹部内に選択的に配され,かつ前記発熱領域を定める光熱変換層パターンと;
前記光熱変換層パターンの上に配される反射層と;
をさらに有することを特徴とするドナー基板。 - 前記反射層は,さらに前記ベース基板の上に配されることを特徴とする,請求項4に記載のドナー基板。
- 前記選択的発熱構造体と前記転写層との間に介在される中間層をさらに備えることを特徴とする,請求項4に記載のドナー基板。
- ベース基板と;
前記ベース基板上に配される転写層と;
前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域と前記発熱領域に隣接する非発熱領域とを有する選択的発熱構造体と;
を備え,
前記選択的発熱構造体は,
前記ベース基板の一部の領域に選択的に配され,かつ前記非発熱領域を定める反射層パターンと;
前記反射層パターンを覆う光熱変換層と;
前記光熱変換層上に配される反射層と;
を有することを特徴とするドナー基板。 - 前記選択的発熱構造体と前記転写層との間に介在される中間層をさらに備えることを特徴とする,請求項7に記載のドナー基板。
- ベース基板と;
前記ベース基板上の一部の領域に選択的に配され,光熱変換により発熱する発熱領域を定める光熱変換層パターンと;
前記光熱変換層パターンを覆うように前記ベース基板上に配される反射層と;
前記反射層上に配される転写層と;
を備えることを特徴とするドナー基板。 - 前記反射層は,さらに前記光熱変換層パターンの側部を覆いながら前記ベース基板に接触して配されることを特徴とする,請求項9に記載のドナー基板。
- 前記光熱変換層パターンと前記転写層との間に介在される中間層をさらに含むことを特徴とする,請求項9に記載のドナー基板。
- 陥凹部を有するベース基板と;
前記陥凹部内に選択的に配され,光熱変換により発熱する発熱領域を定める光熱変換層パターンと;
前記光熱変換層パターンを覆うように前記ベース基板上に配される反射層と;
前記反射層上に配される転写層と;
を備えることを特徴とするドナー基板。 - 前記光熱変換層パターンおよび前記ベース基板と,前記転写層との間に介在される中間層をさらに備えることを特徴とする,請求項12に記載のドナー基板。
- ベース基板と;
前記ベース基板上の一部の領域に選択的に配され,光熱変換により発熱する発熱領域に隣接する非発熱領域を定める反射層パターンと;
前記反射層パターンを覆うように前記ベース基板上に配される光熱変換層と;
前記光熱変換層上に配される反射層と;
前記反射層上に配される転写層と;
を備えることを特徴とするドナー基板。 - 前記光熱変換層と前記転写層との間に介在される中間層をさらに含むことを特徴とする,請求項14に記載のドナー基板。
- ベース基板と,前記ベース基板上に配される転写層と,前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域および前記発熱領域に隣接する非発熱領域とを有し,さらに前記ベース基板の一部の領域に選択的に配され,かつ前記発熱領域を定める光熱変換層パターンと,前記光熱変換層パターンを覆うように前記ベース基板に配される反射層とを有する選択的発熱構造体とを備えるドナー基板を準備し,
少なくとも一つの画素電極を有するアクセプタ基板上に,前記ドナー基板の前記転写層が前記アクセプタ基板に対向するように,前記ドナー基板を配し,
前記ドナー基板上に,前記発熱領域の幅より大きい幅を有するレーザ光線を照射し,前記アクセプタ基板の画素電極上に転写層パターンを形成することを特徴とする,有機電界発光表示装置の製造方法。 - 陥凹部を有するベース基板と,前記ベース基板上に配される転写層と,前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域と前記発熱領域に隣接する非発熱領域とを有する選択的発熱構造体とを備え,さらに前記選択的発熱構造体は,前記陥凹部内に選択的に配され,かつ前記発熱領域を定める光熱変換層パターンと,前記光熱変換層パターンの上に配される反射層とを有するドナー基板を準備し,
少なくとも一つの画素電極を有するアクセプタ基板上に,前記ドナー基板の前記転写層が前記アクセプタ基板に対向するように,前記ドナー基板を配し,
前記ドナー基板上に,前記発熱領域の幅より大きい幅を有するレーザ光線を照射し,前記アクセプタ基板の画素電極上に転写層パターンを形成することを特徴とする,有機電界発光表示装置の製造方法。 - ベース基板と,前記ベース基板上に配される転写層と,前記ベース基板と前記転写層との間に介在され,光熱変換により発熱する発熱領域および前記発熱領域に隣接する非発熱領域とを有し,さらに前記ベース基板の一部の領域に選択的に配され,かつ前記非発熱領域を定める反射層パターンと,前記反射層パターンを覆う光熱変換層とを有する選択的発熱構造体とを備えるドナー基板を準備し,
少なくとも一つの画素電極を有するアクセプタ基板上に,前記ドナー基板の前記転写層が前記アクセプタ基板に対向するように,前記ドナー基板を配し,
前記ドナー基板上に,前記発熱領域の幅より大きい幅を有するレーザ光線を照射し,前記アクセプタ基板の画素電極上に転写層パターンを形成することを特徴とする,有機電界発光表示装置の製造方法。
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KR20040083744A KR100667069B1 (ko) | 2004-10-19 | 2004-10-19 | 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법 |
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JP2006309995A (ja) * | 2005-04-27 | 2006-11-09 | Sony Corp | 転写用基板および表示装置の製造方法ならびに表示装置 |
KR100759685B1 (ko) * | 2005-09-08 | 2007-09-17 | 삼성에스디아이 주식회사 | 레이저 전사용 전사부재 및 이를 이용한 발광소자 및발광소자의 제조방법 |
JP4449890B2 (ja) * | 2005-11-21 | 2010-04-14 | ソニー株式会社 | 転写用基板および転写方法ならびに表示装置の製造方法 |
JP5013048B2 (ja) * | 2006-04-06 | 2012-08-29 | ソニー株式会社 | 赤色有機発光素子およびこれを備えた表示装置 |
JP2008027722A (ja) * | 2006-07-21 | 2008-02-07 | Sony Corp | 表示装置および表示装置の製造方法 |
US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP2008235010A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置の製造方法 |
US8367152B2 (en) * | 2007-04-27 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device |
KR20090028413A (ko) * | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 제작방법 및 증착용 기판 |
KR20090041314A (ko) * | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
US8153201B2 (en) * | 2007-10-23 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light-emitting device, and evaporation donor substrate |
US8425974B2 (en) * | 2007-11-29 | 2013-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation donor substrate and method for manufacturing light-emitting device |
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CN1769066B (zh) | 2012-02-15 |
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EP1650046B1 (en) | 2012-12-19 |
JP2006123546A (ja) | 2006-05-18 |
KR100667069B1 (ko) | 2007-01-10 |
EP1787822A3 (en) | 2007-05-30 |
US20060084006A1 (en) | 2006-04-20 |
US7674749B2 (en) | 2010-03-09 |
CN1769066A (zh) | 2006-05-10 |
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