JP4485972B2 - 半導体酸化装置及び半導体素子の製造方法 - Google Patents
半導体酸化装置及び半導体素子の製造方法 Download PDFInfo
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- JP4485972B2 JP4485972B2 JP2005037805A JP2005037805A JP4485972B2 JP 4485972 B2 JP4485972 B2 JP 4485972B2 JP 2005037805 A JP2005037805 A JP 2005037805A JP 2005037805 A JP2005037805 A JP 2005037805A JP 4485972 B2 JP4485972 B2 JP 4485972B2
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Description
実施例1に係る面発光レーザの詳細な断面構造を図11に示す。図示する面発光レーザ200は、波長1.3μmのレーザを発振するもので、3インチの大きさの面方位〈100〉のn−GaAs基板202上に、媒質内における発振波長の1/4倍の厚みを有し、n−AlxGa1−xAs(x=0.9)とn−GaAsを交互に35.5周期積層した周期構造からなるn−半導体分布ブラッグ反射鏡(「下部半導体分布ブラッグ反射鏡」;以下、単に「下部反射鏡」という。)204を形成した。下部反射鏡204の上には、アンドープGaAsスペーサ層206、3層のGaInNAs井戸層208と4層のGaAsバリア層210からなる多重量子井戸活性層212、アンドープ上部GaAsスペーサ層214を形成した。
他の断面構造を有する面発光レーザを図13に示す。図示する面発光レーザは、面方位〈110〉方向に傾斜角2°をもって傾斜したn−(100)GaAs基板302上に、n−Al0.9Ga0.1Asとn−Al0.3Ga0.7Asを媒質内における発振波長の1/4倍の厚みで交互に、例えば、35.5周期積層した周期構造からなるn−半導体分布ブラッグ反射鏡(第1反射鏡:n側DBR)304を形成した(図13では詳細は省略)。n−Al0.9Ga0.1Asとn−Al0.3Ga0.7Asの間には、Al組成を一方の値から他方の値に徐々に変化させた、厚み20nmの組成傾斜層(図示せず)を挿入し、傾斜層を含めて媒質内における発振波長の1/4倍の厚みとした。このような構成を採用することにより、DBRに電流を流す場合、両者のバンド不連続を滑らかにすることができ、高抵抗化を抑制できる。第1反射層304の上には更に、Al0.5Ga0.5As下部スペーサ(クラッド)層306,波長が780nmとなる3層のAlGaAs井戸層と4層のAl0.3Ga0.7As障壁層からなる量子井戸活性層308、Al0.5Ga0.5As上部スペーサ(クラッド)層310を形成した。更にその上に、p−AlxGa1−xAs(x=0.9)とp−AlxGa1−xAs(x=0.3)を交互に、例えば25周期積層した周期構造のn−半導体分布ブラッグ反射鏡(第2反射鏡:p側DBR)312を形成した(図13では詳細は省略)。第2反射層312にも、第1反射鏡304と同様に組成傾斜層を挿入した。最上部には、電極との接触をとるp−GaAsコンタクト層314を形成した。第1反射鏡と第2反射鏡の間は、発振波長の1波長分の長さ(いわゆるラムダキャビティ)とした。
図14は、面発光レーザを一列に配置した面発光レーザアレイチップ400を示す。図示する面発光レーザアレイチップ400を構成する面発光レーザ402を上述の製造方法により製造されたものであり、電流狭窄部に囲まれた電流注入部の内径は5μmであり、横モードがシングルモードで動作するものである。なお、本適用例において、面発光レーザ402はp型GaAs半導体基板上に形成されており、上面にn側個別電極404、裏面にp側共通電極(図示せず)が配置されている。なお、図面上、面発光レーザ402は一次元(一列)配置されているが、二次元(複数列)配置してもよい。このように、上述した面発光レーザを用いた面発光レーザアレイチップでは、各レーザが面発光型であるために容易に配列でき、しかも通常の半導体プロセスで一体的に形成できるので、素子が極めて精度良く配置される。したがって、製品の歩留まりが飛躍的に向上し、製造時間を大幅に短縮できるので、低コストの面発光レーザアレイが提供できる。
図15は、面発光レーザを用いて構成された光送信モジュール500を示す。図示するように、光通信モジュール500は、適用例1で説明した面発光レーザアレイチップ502と多数の光導波路504で構成されており、各光導波路504の端面(光入力部)を面発光レーザに対向し、この面発光レーザから出射される光が光導波路504に入力されるようにしてある。光導波路504としては、例えば光ファイバが利用できる。また、光ファイバとしては、例えばシリカファイバを用いることができる。図示する実施の形態では、面発光レーザは波長1.3μmの光を出射するシングルモード素子を用い、光導波路である光ファイバにはシングルモードファイバを用いている。
図16は、面発光レーザを用いて構成された光通信(送受信)モジュール600を示す。図示するように、光通信モジュール600は、実施例2の製造方法によって製造された面発光レーザ602と、受信用フォトダイオード604と、アクリル系プラスチックファイバ606を組み合わせて構成されている。なお、面発光レーザ602はマルチモード素子であり、その発振波長は780nmである。
図17は、面発光レーザを用いて構成された画像形成装置700の概略構成を示す。画像形成装置700は、例えば、電子写真法による複写機、プリンタ、ファクシミリ、またはそれらの機能を複合的に搭載した複合機であり、静電潜像坦持体である感光体702と、一様に帯電された感光体702の外周面に光を露光する露光系704を備えている。露光系704は、作成する画像に対応した光を出力する光源706と、光源706から出力された光を反射しながら感光体702に走査するポリゴンミラー708と、ポリゴンミラー708で反射された光を感光体702に結像するレンズ系710を備えており、光源706に面発光レーザアレイ712が用いられている。
適用例4では面発光レーザを画像書き込み用の光源に用いたが、面発光レーザはCD等の記録媒体に対する記録用及び再生用の光源として利用することもできる。特に、上述の製造方法によれば面発光レーザは、端面発光型半導体レーザよりも低価格で製造できるとともに、端面発光型半導体レーザに比べて消費電力が少ないという利点を有することから、消費電力が問題となる携帯型の光ピックアップ装置に特に好適に利用できる。
Claims (15)
- 密閉可能な容器と、
半導体試料を支持するために上記容器の内部に設けられた基台と、
上記半導体試料の特定部位を酸化するために上記容器の内部に水蒸気を供給する供給部と、
上記基台に支持された半導体試料に対向可能に上記容器の壁に設けられた観察窓と、
上記容器の外部に上記観察窓を介して上記基台上の半導体試料と対向可能に設けられた観察手段と、
上記基台と観察手段との距離を調整する調整手段と、
上記供給部からの水蒸気の供給を停止して上記半導体試料の酸化を中断する手段と、
上記観察手段で得られた像をもとに上記半導体試料特定部位の酸化進行度を求め、上記酸化進行度に基づいて追加酸化量を求める手段と、
上記追加酸化量だけ上記半導体試料特定部位を追加酸化する手段を備えたことを特徴とする半導体酸化装置。 - 上記基台が加熱器を備えた加熱テーブルと上記加熱テーブル上に配置されて上記半導体試料を支持する試料テーブルを備えており、上記調整手段が上記加熱テーブルと上記試料テーブルを一体的に移動させる基台移動機構を備えていることを特徴とする請求項1に記載の半導体酸化装置。
- 上記基台が加熱器を備えた加熱テーブルと上記加熱テーブル上に配置されて上記半導体試料を支持する試料テーブルを備えており、上記調整手段が上記試料テーブルを移動させる基台移動機構を備えていることを特徴とする請求項1に記載の半導体酸化装置。
- 密閉可能な容器と、
半導体試料を支持するために上記容器の内部に設けられた基台と、
上記半導体試料の特定部位を酸化するために上記容器の内部に水蒸気を供給する供給部と、
上記基台に支持された半導体試料の上方に位置する容器壁に設けられた観察窓と、
上記容器の外側にあって上記観察窓を介して上記基台に対向する観察手段と、
上記基台又は観察手段若しくはそれらの両方を上下方向に移動させる昇降機構と、
上記供給部からの水蒸気の供給を停止して上記半導体試料の酸化を中断する手段と、
上記観察手段で得られた像をもとに上記半導体試料特定部位の酸化進行度を求め、上記酸化進行度に基づいて追加酸化量を求める手段と、
上記追加酸化量だけ上記半導体試料特定部位を追加酸化する手段を備えたことを特徴とする半導体酸化装置。 - 密閉可能な容器と、
半導体試料を支持するために上記容器の内部に設けられた基台と、
上記半導体試料の特定部位を酸化するために上記容器の内部に水蒸気を供給する供給部と、
上記容器の壁に設けられた観察窓と、
上記基台上に支持された上記半導体試料が上記観察窓に接近した観察位置と上記観察窓から離間する退避した退避位置との間で上記基台を移動させる移動機構と、
上記容器の外側にあって上記観察位置にある上記半導体試料と上記観察窓を介して対向する観察手段と、
上記供給部からの水蒸気の供給を停止して上記半導体試料の酸化を中断する手段と、
上記観察手段で得られた像をもとに上記半導体試料特定部位の酸化進行度を求め、上記酸化進行度に基づいて追加酸化量を求める手段と、
上記追加酸化量だけ上記半導体試料特定部位を追加酸化する手段を備えたことを特徴とする半導体酸化装置。 - 上記観察手段がマイクロスコープであることを特徴とする請求項1〜5のいずれかに記載の半導体装置。
- 上記観察手段が自動焦点機能を備えていることを特徴とする請求項1〜6のいずれかに記載の半導体装置。
- 上記酸化の中断中に上記容器内部の雰囲気ガスを真空排気する真空装置を備えたことを特徴とする請求項1〜7のいずれかに記載の半導体酸化装置。
- 上記酸化の中断中に上記容器内部で上記基台に支持されている上記半導体試料に不活性ガスを吹き付ける不活性ガス供給部を備えていることを特徴とする請求項1〜7のいずれかに記載の半導体酸化装置。
- 上記半導体試料が酸化狭窄型面発光レーザ用のウェハであることを特徴とする請求項1〜9のいずれかに記載の半導体酸化装置。
- アルミニウムと砒素を含む半導体層を備えたメサを含む半導体試料を水蒸気の雰囲気内に配置し、上記半導体層を上記メサの外周側面に現れる上記半導体層の周端から半径方向内側に向かって且つ上記半導体層の中央部を残して酸化することにより上記半導体層に電流狭窄部とこれに囲まれた電流注入部を形成する半導体素子の製造方法において、
上記半導体層の酸化処理中に少なくとも一回は上記酸化処理を中断する工程と、
上記酸化処理が中断されている間に、上記半導体素子が収容されている容器に設けた観察窓を介して上記容器内のメサと上記容器外の観察手段を接近させて対向させる工程と、
上記観察手段で観察された上記電流狭窄部の大きさ又は上記電流狭窄部に囲まれた電流注入部の大きさから酸化進行度を求める工程と、
上記酸化進行度から追加酸化量を求める工程と、
上記追加酸化量だけ上記半導体層を追加酸化する工程を備えたことを特徴とする半導体素子の製造方法。 - 上記メサと上記観察手段を接近させて対向させる工程は、上記メサを上記観察窓に接近させる工程を含むことを特徴とする請求項11に記載の半導体素子の製造方法。
- 上記酸化の中断中に上記容器内部の雰囲気ガスを真空排気する工程を含むことを特徴とする請求項11又は12のいずれかに記載の半導体素子の製造方法。
- 上記酸化の中断中に上記容器内部に支持されている上記半導体試料に不活性ガスを吹き付ける工程を含むことを特徴とする請求項11又は12のいずれかに記載の半導体素子の製造方法。
- 上記半導体素子が酸化狭窄型の面発光レーザであることを特徴とする請求項11〜14のいずれかに記載の半導体素子の製造方法。
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EP06714039A EP1849182B1 (en) | 2005-02-15 | 2006-02-13 | Semiconductor oxidation apparatus and method of producing semiconductor elements |
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PCT/JP2006/302898 WO2006088166A1 (en) | 2005-02-15 | 2006-02-13 | Semiconductor oxidation apparatus and method of producing semiconductor element |
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JP5092432B2 (ja) * | 2007-02-02 | 2012-12-05 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、光学装置、光照射装置、情報処理装置、光送信装置、光空間伝送装置および光伝送システム |
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JP5504784B2 (ja) | 2009-03-18 | 2014-05-28 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置 |
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- 2006-02-13 EP EP06714039A patent/EP1849182B1/en not_active Expired - Fee Related
- 2006-02-13 KR KR1020067021340A patent/KR100833961B1/ko not_active IP Right Cessation
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CN1943020A (zh) | 2007-04-04 |
WO2006088166A1 (en) | 2006-08-24 |
CN1943020B (zh) | 2011-06-29 |
CN102255242A (zh) | 2011-11-23 |
EP1849182A4 (en) | 2010-11-17 |
CN102255242B (zh) | 2013-07-10 |
KR100833961B1 (ko) | 2008-05-30 |
EP1849182B1 (en) | 2012-01-11 |
JP2006228811A (ja) | 2006-08-31 |
KR20070069092A (ko) | 2007-07-02 |
EP1849182A1 (en) | 2007-10-31 |
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