JP4485511B2 - ヒートシンク装置及びその製造方法 - Google Patents
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- JP4485511B2 JP4485511B2 JP2006321629A JP2006321629A JP4485511B2 JP 4485511 B2 JP4485511 B2 JP 4485511B2 JP 2006321629 A JP2006321629 A JP 2006321629A JP 2006321629 A JP2006321629 A JP 2006321629A JP 4485511 B2 JP4485511 B2 JP 4485511B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000002184 metal Substances 0.000 claims description 95
- 229910052751 metal Inorganic materials 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000002390 adhesive tape Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 238000007772 electroless plating Methods 0.000 claims description 10
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000002788 crimping Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 68
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Description
本発明の他の課題は、粘着テープにより金属製ヒートシンクを半導体素子の底面上に配置することにより、接着剤やその他の接着技術を用いる必要がなく、半導体素子の周囲にある金属製ヒートシンク上にボンディングパッドを配置して半導体素子の電極と外部回路とを電気的に接続することにより、素子を作動させた時に発生する熱を迅速かつ効果的に除去し、素子の良好な動作性を確保して寿命を延ばすことができる上、半導体素子の正負極を外部回路に簡単に接続することのできるヒートシンク装置の製造方法を提供することにある。
(1) 金属薄層、金属製ヒートシンク、及び、2つのボンディングパッドを備えたヒートシンク装置であって、前記金属薄層は、第1表面と第2表面とを有し、前記第1表面には、極性の異なる2つの電極を有する半導体素子が少なくとも1つ埋め込まれ、前記金属製ヒートシンクは、前記金属薄層の前記第2表面に接合され、前記ボンディングパッドは、前記第1表面上に配置され、ワイヤを介して前記各電極と外部回路とにそれぞれ電気接続したことを特徴とするヒートシンク装置を提供する。
前記(1)に記載のヒートシンク装置の製造方法であって、
(9) 仮基板の表面に粘着テープを接着する工程と、前記粘着テープの表面の一部に極性の異なる2つの電極を有する半導体素子を圧着する工程と、前記粘着テープ及び前記半導体素子の表面に金属薄層を形成することにより、前記金属薄層の第1表面に前記半導体素子を埋め込む工程と、前記金属薄層の第2表面に金属製ヒートシンクを形成する工程と、前記粘着テープ及び前記仮基板を除去する工程と、前記金属薄層の表面に2つのボンディングパッドを形成し、該ボンディングパッドと前記半導体素子の各電極とをワイヤを介して電気的に接続する工程とを含むことを特徴とするヒートシンク装置の製造方法を提供する。
102 粘着テープ
104 表面
106 表面
108a 光電素子
108b 光電素子
110 電極
112 電極
114 金属薄層
116 銀膜
118 金膜
120 光反射層
122 金属製ヒートシンク
124 絶縁層
126 導電層
128 ボンディングパッド
130 絶縁層
132 導電層
134 ボンディングパッド
136 ワイヤ
138 ワイヤ
140 粘着剤
Claims (15)
- 金属薄層、金属製ヒートシンク、及び、2つのボンディングパッドを備えたヒートシンク装置であって、
前記金属薄層は、第1表面と第2表面とを有し、前記第1表面には、極性の異なる2つの電極を有する半導体素子が少なくとも1つ埋め込まれ、
前記金属製ヒートシンクは、前記金属薄層の前記第2表面に接合され、
前記ボンディングパッドは、前記第1表面上に配置され、ワイヤを介して前記各電極と外部回路とにそれぞれ電気接続したことを特徴とするヒートシンク装置。 - 前記半導体素子は、GaN系材料、AlGaInP系材料、PbS系材料又はSiC系材料である化合物半導体材料からなることを特徴とする請求項1に記載のヒートシンク装置。
- 前記金属薄層は、Ni、Cr、Ti、Ag、Pt、Al、Au若しくはこれらの金属合金であることを特徴とする請求項1又は2に記載のヒートシンク装置。
- 前記金属薄層の厚みは、10μmよりも小さいことを特徴とする請求項1乃至3のいずれか1項に記載のヒートシンク装置。
- 前記金属製ヒートシンクは、Fe/Ni合金、Cu、Ni、Al、W、又はこれらの金属合金からなることを特徴とする請求項1乃至4のいずれか1項に記載のヒートシンク装置。
- 前記金属製ヒートシンクの厚みは、10μmよりも大きいことを特徴とする請求項1乃至5のいずれか1項に記載のヒートシンク装置。
- 前記ボンディングパッドは、
前記金属薄層の表面に形成された絶縁層と、
前記絶縁層上に形成された導電層と、
を備えることを特徴とする請求項1乃至6のいずれか1項に記載のヒートシンク装置。 - 前記金属製ヒートシンクと前記金属薄層の間に形成された光反射層をさらに備えることを特徴とする請求項1乃至7のいずれか1項に記載のヒートシンク装置。
- 前記請求項1に記載のヒートシンク装置の製造方法であって、
仮基板の表面に粘着テープを接着する工程と、
前記粘着テープの表面の一部に極性の異なる2つの電極を有する半導体素子を圧着する工程と、
前記粘着テープ及び前記半導体素子の表面に金属薄層を形成することにより、前記金属薄層の第1表面に前記半導体素子を埋め込む工程と、
前記金属薄層の第2表面に金属製ヒートシンクを形成する工程と、
前記粘着テープ及び前記仮基板を除去する工程と、
前記金属薄層の表面に2つのボンディングパッドを形成し、該ボンディングパッドと前記半導体素子の各電極とをワイヤを介して電気的に接続する工程と、
を含むことを特徴とするヒートシンク装置の製造方法。 - 前記粘着テープの両面は粘着性を有することを特徴とする請求項9に記載のヒートシンク装置の製造方法。
- 前記粘着テープは、耐酸アルカリ性材料からなることを特徴とする請求項9又は10に記載のヒートシンク装置の製造方法。
- 前記金属薄層は、蒸着法、スパッタリング法又は無電解めっき法により形成することを特徴とする請求項9乃至11のいずれか1項に記載のヒートシンク装置の製造方法。
- 前記金属製ヒートシンクは、電解めっき法又は無電解めっき法により形成することを特徴とする請求項9乃至12のいずれか1項に記載のヒートシンク装置の製造方法。
- 前記ボンディングパッドは、
前記金属薄層の前記第1の表面上に形成された絶縁層と、
前記絶縁層上に形成された導電層と、
を備えることを特徴とする請求項9乃至13のいずれか1項に記載のヒートシンク装置の製造方法。 - 前記金属薄層を形成する工程と前記金属製ヒートシンクを形成する工程との間に、
前記金属薄層上に光反射層を形成する工程をさらに含むことを特徴とする請求項9乃至14のいずれか1項に記載のヒートシンク装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW095123020A TWI297537B (en) | 2006-06-26 | 2006-06-26 | Embedded metal heat sink for semiconductor device and method for manufacturing the same |
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JP2008010808A JP2008010808A (ja) | 2008-01-17 |
JP4485511B2 true JP4485511B2 (ja) | 2010-06-23 |
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Country | Link |
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US (2) | US7452755B2 (ja) |
JP (1) | JP4485511B2 (ja) |
KR (1) | KR100787705B1 (ja) |
DE (1) | DE102007021986B4 (ja) |
TW (1) | TWI297537B (ja) |
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TWI485825B (zh) * | 2009-07-28 | 2015-05-21 | Xintec Inc | 晶片封裝體及其形成方法 |
CN102403436B (zh) * | 2010-09-07 | 2014-01-22 | 昆山科技大学 | 半导体发光元件的散热座的制作方法 |
CN102412361B (zh) | 2010-09-21 | 2016-06-08 | 佳胜科技股份有限公司 | 层叠散热基板以及使用此层叠散热基板的电子组装结构 |
TW201225360A (en) * | 2010-12-07 | 2012-06-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
TWI407536B (zh) * | 2010-12-10 | 2013-09-01 | Univ Nat Cheng Kung | 半導體元件之散熱座的製作方法 |
TW201234684A (en) * | 2011-02-01 | 2012-08-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
TWI424594B (zh) * | 2011-02-17 | 2014-01-21 | Chi Mei Lighting Tech Corp | 發光二極體元件及其製作方法 |
US9245874B2 (en) | 2011-04-18 | 2016-01-26 | Cree, Inc. | LED array having embedded LED and method therefor |
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TWI599285B (zh) * | 2016-07-01 | 2017-09-11 | 先豐通訊股份有限公司 | 晶片埋入式電路板結構及功率模組 |
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2006
- 2006-06-26 TW TW095123020A patent/TWI297537B/zh not_active IP Right Cessation
- 2006-09-06 US US11/470,279 patent/US7452755B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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DE102007021986A1 (de) | 2007-12-27 |
US20070296074A1 (en) | 2007-12-27 |
US7723829B2 (en) | 2010-05-25 |
US20080246143A1 (en) | 2008-10-09 |
JP2008010808A (ja) | 2008-01-17 |
US7452755B2 (en) | 2008-11-18 |
DE102007021986B4 (de) | 2009-06-10 |
TW200802756A (en) | 2008-01-01 |
TWI297537B (en) | 2008-06-01 |
KR100787705B1 (ko) | 2007-12-21 |
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