TW201234684A - Light-emitting diode device and method for manufacturing the same - Google Patents

Abstract

A light-emitting diode device and a method for manufacturing the same are described. The light-emitting diode device includes a metal heat dissipation bulk, a metal layer, a package base, a light-emitting diode chip, first and second electrode pads, and a package encapsulant. The metal layer covers the metal heat dissipation bulk. The package base is disposed on the metal layer and has a cavity. The package base includes a metal substrate and an insulation layer wrapping the metal substrate. The light-emitting diode chip is disposed in the cavity, and the light-emitting diode chip has first conductivity type and second conductivity type electrodes of different conductivity types. The first and second electrode pads are disposed on the package base, and electrically connected to the first conductivity type and second conductivity type electrodes respectively. The package encapsulant encapsulates the cavity and the light-emitting diode chip.

Description

201234684 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a light-emitting element, and more particularly to a light-emitting diode (LED) element and a method of fabricating the same. [Prior Art] Referring to Fig. 1 which is a cross-sectional view showing a conventional light-emitting diode element. The light-emitting diode element 1 〇〇 mainly comprises a light-emitting diode wafer # 102, a package base 104, a wire 114, a lead frame Π 2 and an encapsulant 116. In the light-emitting diode element 100, the lead frame 112 includes lead pins i8a and 108b, and a metal heat-conducting block 11A. Wherein, the lead pins 1〇8b are joined to the metal heat conducting block 110, and the lead pins 10a are electrically separated from the metal heat conducting block 110 and the guiding pins 108b. The package base 104 is bonded to the lead frame 112, but exposes a portion of each of the lead pins 10, such as a portion of i08b, and a bottom surface of the metal heat conducting block n〇. Further, the package base 104 has a recess 118 in which the recess 118 exposes a portion of the surface of the metal thermally conductive block 11 of the package base 1 4 and a portion of the surface of the guide 108a. The light emitting diode chip 102 is disposed in the recess H8 of the package base 1〇4 and is fixed on the surface of the metal heat conducting block 110 exposed by the recess 118. The LED chip 102 can be electrically connected to the lead pins 1〇8& and 1〇8b through the wires 114 and directly joined to the metal heat conducting block 11b. Therefore, the external power source can supply electric power to the light-emitting diode wafer 102 via the lead pins 108 & and 108b to cause the light-emitting diode wafer 1 to emit light. The sidewalls of the recesses 118 of the package base 104 are typically provided with a reflective layer 201234684 106' to facilitate the emission of the light emitted from the LED substrate 1〇2 toward the sidewalls of the recess 118 toward the front side of the light-emitting diode element 100. The light reflection efficiency of the light-emitting diode element 100 can be improved by reflection. The encapsulant 116 fills the recess 118 to cover the surface of the metal thermal block 110 exposed by the LED chip 1, the wire 114, the reflective layer 1〇6, and the recess 118. The surface of 108a. In order to solve the political heat caused by the high-current operation of the light-emitting diode chip 1 〇 2, the lead frame 112 has a design of a metal heat-conducting block 11 。. With the metal heat conducting block 110, the heat generated by the operation of the light-emitting diode wafer 1 〇 2 can be led downward. In this way, the heat generated during operation can be prevented from accumulating the light-emitting diode wafer 1〇2, thereby improving the luminous efficiency and reliability of the light-emitting diode wafer 1〇2. However, in such a lead frame design, since the metal heat conductive block 110 and the lead pins 108b are connected to each other but have different thicknesses, the difficulty in the manufacturing process of the lead frame 112 is greatly increased. Further, the package base 104 is formed by injection molding a polyphthalamide (PPA) material. However, the heat dissipation effect of the PPA material is not good, so the package base 1〇4 cannot effectively dissipate the heat generated by the operation of the light-emitting diode wafer 102. At present, in order to solve the heat dissipation problem, a ceramic material such as Low Temperature Co-fire Ceramic (LTCC) is used as a material for the package base. Since the ceramic material has good heat dissipation characteristics, the ceramic material is used as a material for the package base to contribute to heat dissipation of the light-emitting diode element. However, because the low temperature co-fired ceramic material itself is mostly a multi-layer stack junction

S 5 201234684 is a 'brighter texture' and therefore is not easy to make into a base. In particular, most of the current use of the laser method to make the reflective bowl of the package base, but the laser method is not only extremely costly, but also can not produce a smooth and angled reflector cup (4). Such a phenomenon causes the reflection angle of the light emitted from the LED film to be poor, thereby affecting the light shape of the light-emitting diode material, and causing the brightness of the light-emitting diode element to decrease. SUMMARY OF THE INVENTION Therefore, in one aspect of the present invention, a light-emitting diode element and a method for fabricating a metal are used as a body of a crack pedestal, so that the light-emitting diode element can have better heat dissipation. efficacy. Another cancer of this month is to provide a light-emitting diode component and a method for making a packaged base body using a metal plate. Therefore, it is simple: the machining method can smoothly form the cup of the package base. Concave. ^In one way, not only can the light-emitting diode 3 effect of the light-emitting diode chip be improved, but the light-emitting wire and brightness required for obtaining the light can be greatly reduced, and the complexity of the groove making of the seal and the earth seat can be greatly reduced, and the manufacturing cost can be effectively reduced. - the invention is provided by providing a kind of illumination = method "which can be used to print a recess on a red metal substrate and a wafer, while simultaneously making a light on a simple mechanically-applied square=diode plate The wire pins of the diode element. Therefore, the wire pins of the metal-based component are easy to fabricate. According to the above purpose of this & Ming, the illuminating diode component includes a metal heat sink and a metal layer. A pedestal, a luminescent-polar body wafer, a -electrode pad with 1"~encapsulated ~electrode potential, 6 201234684 and an encapsulant. The metal layer is covered on the metal heat sink. The package base is disposed on the metal layer and has a groove. Wherein, the package base comprises a metal substrate, and an insulating layer covers the metal substrate. The light emitting diode chip is disposed in the recess. The light emitting diode chip has a first electrical electrode and a second electrical electrode having different electrical properties. The first electrode pad and the second electrode pad are disposed on the package base, and are electrically connected to the first electrical electrode and the second electrical electrode, respectively. The encapsulant covers the recess and the LED wafer. According to an embodiment of the invention, the material of the metal substrate may comprise aluminum or copper. Further, the material of the insulating layer may comprise aluminum oxide, tantalum nitride or hafnium oxide. According to another embodiment of the present invention, the metal heat sink and the metal layer further comprise a first gap, so that the first electrode pad and the second electrode pad are electrically separated from the two sides of the first gap. In addition, the package base further has a through hole penetrating through the package base, and the package base includes two wire pins respectively disposed in the through hole to electrically connect the first electrode pad and the second electrode pad to the first A metal heat sink on the side of a gap. According to still another embodiment of the present invention, the metal heat sink and the metal layer further comprise a second gap, and the first gap and the second gap are respectively located on two sides of the light emitting diode chip. According to the above object of the present invention, there is further provided a method of fabricating a light-emitting diode element comprising the following steps. A package base is provided, wherein the package base has at least one recess, and the package base comprises a metal substrate, and an insulating layer covers the metal substrate. A first electrode pad and a second electrode pad are formed on the package base. A temporary substrate is provided, wherein the temporary substrate is provided with a layer of polymer material. Encapsulating the base and at least one light emitting diode

The S 7 201234684 wafer is embedded in the polymer material layer and the LED substrate is placed in the recess. The light-emitting diode chip has one of a first electrical electrode and a second electrical electrode having different electrical properties. A metal layer is formed over the polymer material layer, the package base, and the light emitting diode wafer. A metal heat sink is formed on the metal layer. The temporary substrate and the polymer material layer are removed to expose the first electrical electrode, the second electrical electrode, the first electrode pad and the second electrode pad. The first electrical electrode and the second electrical electrode are electrically connected to the first electrode pad and the second electrode pad, respectively. An encapsulant is formed to cover the recess and the light emitting diode wafer. According to an embodiment of the invention, the step of providing a package base may include: providing a metal plate; forming a through groove in the metal plate to form the metal substrate; and forming an insulating layer to cover the metal substrate. According to another embodiment of the present invention, the material of the metal flat plate may include aluminum, and the step of forming the through-groove includes using a mechanical processing method, and the step of forming the insulating layer may include using an anodizing method to form an oxidation. The layer is used as an insulating layer. According to still another embodiment of the present invention, the material of the metal flat plate may comprise copper, and the step of forming the through-groove may include utilizing a mechanical processing, and the step of forming the insulating layer may include using a deposition method to form the insulating layer. According to still another embodiment of the present invention, the step of providing the package base may further include forming a two-pass hole through the metal plate before the step of forming the insulating layer and respectively located on two sides of the through groove. Moreover, before the step of forming the metal layer, the method for fabricating the LED component may further include forming two wire pins respectively in the through holes, wherein the wire pins are applicable to 0^. 8 201234684 bis Side-to-side electrical connection and second electrode (four) connection to the metal layer. In addition, the step of forming a metal layer and the step of forming a metal heat sink may include a stack structure of a metal layer of a shape-first gap, such that the first electrode pad is electrically separated from the second electrode. According to a second embodiment of the present invention, the step of forming a metal layer and the step of forming a heat sink may further comprise forming a second gap through the stack - the first gap and the second The gap is respectively located on the light-emitting diode chip. The invention adopts a metal plate as the body of the package base, and can simultaneously consider the lifting of the heat-dissipating wire of the light-emitting diode element and the manufacturing complexity of the groove reflecting surface of the package base. The reduction. [Embodiment] Please refer to Figs. 2A to 21, which are cross-sectional views showing a process of a light emitting diode device according to an embodiment of the present invention. In the present embodiment, the light-emitting diode element 262 as shown in Fig. 2J can be fabricated and the base 21 can be packaged (refer to Fig. 2C first). When the 2A metal raft 2 is the package base 210, the metal plate 200 is first provided. degree. The metal is flat; the thickness is preferably about the material of the deep groove of the package groove or the package cup; 1 force 2" genus / in the embodiment, the material of the gold eyebrows can be shot, for example, in another The metal plate is then formed into a through-groove 2〇6 at a predetermined position of the metal plate 200 at 9, 201234684 by, for example, machining, as in the case of the 2B garden & Between the surfaces 202 and 204 of the metal plate 2, the through groove 206 can be, for example, a cup type. In one embodiment, the angle between the side wall of the through groove 206 and the bottom surface 2〇4 of the metal plate 2〇〇 The range of 0 may be, for example, 〇. <An angle θ &lt; 9 (Γ, the range of the included angle θ may preferably be between 30 and 60. Next, the insulating layer 208 is formed to cover the metal substrate 2〇〇a The package base 210 is formed, wherein the insulating layer 2〇8 covers all surfaces of the metal substrate 2〇〇a. Further, since the metal substrate 2〇〇a has the through grooves 2〇6, by the metal The package base 210 formed by coating the surface of the substrate 20A with an insulating layer 2〇8 also has The groove 212 is disposed in the package base 210. In an embodiment, the material of the metal plate 200 may include aluminum, so that an aluminum oxide may be formed on all surfaces of the metal substrate 2 by, for example, anodizing. As the material of the insulating layer 2 〇 8. Since the thickness of the oxidized layer is too thick may affect the heat dissipation and reflection effect of the metal pedestal 210. Therefore, the thickness of the aluminum oxide layer can be controlled to reduce the insulating layer 2 〇 8 pairs The effect of heat dissipation performance and reflectivity of the metal base 210. In an example, the thickness of the oxidized layer can be controlled, for example, between 5 // m and 45 &quot; m. In addition, since the appearance color of the aluminum oxide layer is easily biased Black has a light absorbing effect, so in other embodiments, it is more selectively used, for example, by sputtering or evaporation, to form a reflective layer 216 overlying the sidewall 214 of the recess 212 to lift the side of the recess 212. The light reflectivity of the wall 214. In one example, the material of the reflective layer 210 can be, for example, titanium dioxide (Ti〇2) or silver. In another embodiment, the material of the metal plate 200 can comprise copper, and thus, for example, Deposition A layer of tantalum nitride or hafnium is formed to form 201234684 as the material of the insulating layer 208. In an example, the deposition method may be, for example, E-gun Evaporation deposition or sputtering deposition. Then, as shown in FIG. 2C, the electrodes 218 and 220 may be formed on the package base by using, for example, deposition, lithography and etching processes, deposition and lift-off processes, or screen printing processes. 210, wherein the electrode pads 218 and 220 are adjacent to the recess 212 and are located on opposite sides of the recess 212. Then, a temporary substrate 222 is provided. The temporary substrate 222 can be, for example, a flat plate. The temporary substrate 222 is preferably a relatively hard and acid-resistant material. Next, a polymer material layer 226 is formed on the surface 224 of the temporary substrate 222 by, for example, a coating method. In an embodiment, the layer of high molecular material 226 may comprise, for example, a photoresist or a hot melt adhesive. Next, as shown in Fig. 2D, package base 210 and light emitting diode wafer 228 are pressed into surface 242 of layer of high molecular material 226. Further, as shown in Fig. 2E, the package base 210 and the light-emitting diode wafer 228 are embedded in the polymer material layer 226 and the light-emitting body wafer 228 is placed in the recess 212 of the package base 210. In one embodiment, the bottom surface 246 of the package pedestal 210 and the bottom surface 244 of the luminescent diode wafer 228 are preferably flush when embedded in the polymeric material layer 226. In an embodiment, the LED chip 228 may mainly include a substrate 230, a first electrical semiconductor layer 232, a light emitting layer 234, a second electrical semiconductor layer 236, and a first electrical electrode 238 and a second electrical property. Electrode 240. The first electrical semiconductor layer 232 is located on the substrate 230, the luminescent layer 234 is located on the SiO2, and the second electrical semiconductor layer 236 is located on the luminescent layer 234. The first electrical electrode 238 is disposed. Located at the first electricity

S 11 201234684 The semiconductor layer 232 is exposed on another portion, and the second electrical electrode 240 is located on a portion of the second electrical semiconductor layer 236 as shown in FIG. 2D. In the present invention, the first electrical property and the second electrical property are different electrical properties. For example, one of the first electrical property and the second electrical property is an n-type, and the other is a p-type.

As shown in FIG. 2D, when the package base 210 and the light-emitting diode wafer 228 are embedded in the polymer material layer 226, the package base 210 is provided with one side of the electrode pads 218 and 220, and is illuminated. The side of the diode wafer 228 on which the first electrical electrode 238 and the second electrical electrode 24 are disposed is pressed into the polymer material layer 226 toward the surface 242 of the polymer material layer 226. Therefore, as shown in Fig. 2, the electrode pads 218 and 220 of the package base 21 and the first and second electric electrodes 238 and 240 are buried in the polymer material layer 226. In one embodiment, when the LED substrate 228 and the package base 210 are disposed, the package base 210 may be embedded in the polymer material layer 226, and the LED wafer 228 may be embedded in the package base. The intervening material layer 226 in the groove 212 of the seat 21 is a towel. In another embodiment, the light-emitting diode wafer 228 is first embedded in the polymer material layer 226, and the package base 210 is embedded in the polymer material layer 226, and the light-emitting diode wafer 228 is disposed. It is located in the groove 212 of the sealing base 21〇. In still other embodiments, the photodiode wafer 228 and the encapsulation pedestal 2_ are in the high molecular material layer 226.发 ί : :: 1 H t mounting base can have multiple grooves, and can provide a number of simultaneous production of multiple * diode components, ^ slot. In this way, as shown in FIG. 2F, the metal layer 12 can be formed by, for example, deposition. 201234684 248 covers the surface 242 of the polymer material layer 226, the bottom surface 246 of the I 2i, and the light emitting diode chip. On the bottom surface 244 of 228. This deposition method can be, for example, evaporation, sputtering, dectr〇less plating, or electron beam evaporation. In one embodiment, the metal layer 248 can be a single layer structure. In another embodiment, metal layer 248 can be a multilayer composite structure. The thickness of the metal layer 248 is preferably controlled to be less than 3 #m. In an embodiment, the material of the metal layer 248 may be, for example, indium tin oxide (ITO), gold (Au), silver (Ag), ! White (pt), P (Pd) 'Jin (Ni), Chromium (Cr), Titanium (Ti), Tantalum (Ta), Aluminum (A1), Indium (in), Tungsten (W), Copper (Cu), Or an alloy containing nickel, chromium, titanium, a button, aluminum, indium, tungsten or copper. In a preferred embodiment, the material of metal layer 248 may be a highly reflective metallic material such as silver, platinum, aluminum, gold, nickel or titanium. Next, as shown in Fig. 2G, a metal heat sink 250 is formed on the metal layer 248 by, for example, deposition. In a preferred embodiment, this deposition can be by electroplating. The metal heat sink 25 〇 can be thicker to provide greater heat dissipation performance of the LED chip 228. In one embodiment, the thickness of the metal heat sink 250 can be between 5 〇 #m and 5 〇〇 in m. After the deposition of the metal heat sink 250 is completed, the surface 251 of the metal heat sink 25 可 can be further polished &quot; after grinding, the roughness of the surface 251 of the metal heat sink 25 ( (from the highest point of the surface (5) to the lowest Point) is between 8 and 10 ym. Next, as shown in FIG. 2H, the temporary substrate 222 and the polymer material layer 226 are removed from the self-sealing susceptor 21, and the metal layer 248, the light-emitting diode wafer 228, and the first portion thereof in the recess 212 are exposed. An electrical electrode is moved to the second electrical electrode 240, and the package base 21 () and its upper electrode 塾 218 201234684 and 220. In one embodiment, when the material of the polymer material layer 226 is a hot melt adhesive, the polymer material layer 226 can be melted by heating, and at the same time, the temporary substrate 222 is peeled off from the package base 210. In another embodiment, when the material of the polymer material layer 220 is photoresist, the polymer material layer 226 can be removed by using a photoresist to remove the temporary substrate 222 from the package base 21 at the same time. Next, as shown in Fig. 21, the light-emitting diode wafer 228 is connected to the connecting wires 252 and 254, respectively, by means of, for example, a wire bonding method.

The first electrical electrode 238 and the electrode pad 218, and the second electrical electrode 24 and the electrode 塾 220' are used to electrically connect the first electrical electrode 238 and the second electrical electrode 240 to the electrode pads 218 and 22, respectively. connection. Among them, the connecting wires 252 and 254 may be, for example, gold wires. In addition, in the present embodiment, the wire bonding method can also be used, for example, to connect the wire to the 258, and connect the electrode bark and the 22 分别 to an external power source (not shown) to provide a light source for the power source. The polar body wafer 228 is electrically powered. Likewise, connecting wires 256 and 258 can be, for example, gold wires. Subsequently, the encapsulant colloid is overfilled into the recess 212 of the package base 21 (): Ϊ = fabrication of the photodiode element 262. As shown in Fig. 2J, the recess 212 is completely filled, and the recess completely covers the portion of the wafer 228, and the connecting wires 252 and 254, and covers the electrodes: 2 cores t 218 and 220. The encapsulating plastic 260 preferably covers the junction of the 220 wires 252 and 256, and the electrode connection = 5: where the Γ and 258 are joined to ensure the bonding of the electrode pads (10), and the electrode pads 22 and the connecting wires. Engagement of 254 and 258. In an embodiment, the encapsulant 2; 201234684 is doped with a phosphor powder, such as a yttrium aluminum garnet (YAG) series or a b〇se series. The light-emitting diode element of the present invention can also be connected to an external power source in other ways without the need to pass through a connecting wire. Referring to Figure 3, there is shown a cross-sectional view of a light-emitting two-in-one element in accordance with another embodiment of the present invention. In this embodiment, the structure of the light-emitting diode element 274 is substantially the same as that of the light-emitting diode element 262 of the above embodiment. However, the difference between the LED components 262 and 274 is mainly due to the fact that the package base 210a has more vias 264 and 266' than the package base 21 and the vias 264 and 266 are respectively filled with wires. The stacks 268 and 270; and the stacked structure of the metal layer 248a and the metal heat sink 25A have a gap 272 compared to the stacked structure of the metal layer 248 and the metal heat sink 250. Referring to FIG. 2A, FIG. 2B and FIG. 3 simultaneously, when the package base 210a is produced, the through-groove 206 can be formed on the metal flat plate 200 by, for example, machining, and the metal flat plate can be simultaneously Two through holes 264 and 266 are formed in the position. The through holes 264 and 266 extend through the metal plate 200, and the through holes 264 and 266 are respectively located on two sides of the through groove 206. Therefore, after the metal plate 200 is machined, the formed metal substrate has through holes 264 and 266 in addition to the through grooves 206. After the via holes 264 and 266 are formed, the insulating layer 208 is formed to cover all the surfaces of the metal substrate, including the inner sides of the via holes 264 and 266. The method of forming the insulating layer 208 can be in the manner of the foregoing embodiments, and details are not described herein again. Further, electrode pads 218 and 220 are formed over the via holes 264 and 266 to cover the via holes 264 and 266, respectively, to form the package base 21A as shown in Fig. 3. In addition, please refer to FIG. 2E, FIG. 2F and FIG. 3 simultaneously, and after the sealing layer 15201234684 mounting base 210a and the light-emitting diode wafer 228 are embedded in the polymer material layer 226, before forming the metal layer 248a, The two wire pins 268 and 270 are first filled in the through holes 264 and 266 by, for example, deposition. In a real case, the deposition may be, for example, electroplated or electroless. As shown in Fig. 3, the electrode pads 218 and 22 are divided into groups.

The opening of the through hole 2_6 of the seat (10) is on the opening at one end, and the opening of the through holes 264 and 266 is completed. Therefore, the wire pins 268 and 27, respectively formed in the through holes 264 and 266, can be electrically connected to the electrode pads 218 and 22, respectively. The metal layer 248a is formed after the wire pins 268 and 270 are formed. Metal layer 248a overlies bottom surface 244 of light emitting diode wafer 228, bottom surface 246 of package base 210a, and wire pins 268 and 27A. The genus layer 248a covers the wire pins 268 and 27, and is in contact with the wire pins 268, 270. In this way, the conductor pins 268 and 270 can electrically connect the power lines 218 and 220 to the metal layer. Next, a metal chevron 25a is formed to cover the metal layer 248a. In the embodiment, 'making a metal layer weave and a metal heat sinking station' can form a layer of a continuous metal layer (only the metal layer of which is shown in the chip =) 'reformed-layer continuous metal heat sink layer (only The portion of the metal political seat 25〇a is shown to cover the continuous metal layer. Next, = for example, a machining method or a water jet cutting method, in which a gap 272' is formed at a predetermined position of the stacked structure of the continuous metal heat dissipating layer to form a metal layer and a metal spar. In the ^ _ towel, the production of gold weaving and touch heat sink fishing, can be used to electroless plating method 'design to make the metal layer 2 pseudo and metal heat. 201234684 f 2 two are growing together with the separation of the two parts. In this way, the layer is spread over the metal heat sink 250a, and the gap 272 is stacked. a stack electrode formed of a metal layer (10) and a metal heat sink 25〇3 is formed on one side of the light emitting diode wafer 228, and

The base 210a is packaged. Further, the gap 272 is disposed such that the electrode pads 218 and 22() on the package base 21()a are not short-circuited by the underlying metal layer 48a and the metal heat sink 25Ga. Therefore, the gap 272 can electrically separate the electrode pads 218 and 220 from the two sides of the _ 272 &amp; In an embodiment, an electrical insulating material (not shown) may be filled in the gap 272 to further ensure that the electrode pads 218 and 220 are electrically separated from the two sides of the gap 272. Through the gap 272, the electrode 218 can be electrically connected to one of the external power sources through the wire pin, the portion of the metal layer 2 on the side of the 272 side, and the portion of the metal heat sink 250a on the side. . On the other hand, the electrode pad 220 can be electrically connected to the other electrode of the external power source through the wire pin 27, the portion of the metal layer 24Sa on the other side of the gap 272, and the portion of the metal cavity 250a on the side. Sexual connection. The light-emitting diode element of the present invention may also include two gaps, and the light-emitting diode element has operational characteristics of thermoelectric separation. Referring to Fig. 4, there is shown a cross-sectional view of a light-emitting diode element in accordance with still another embodiment of the present invention. In this embodiment, the structure of the light-emitting diode element 278 is substantially the same as that of the light-emitting diode element 274 of the above embodiment. However, the difference between the LED components 274 and 278 is mainly due to: In addition to the gap 272, the metal layer 248b and the metal heat sink 25〇b are constructed in a manner that is compared with the metal layer 248a. The metal heat sink 250a is constructed with a gap 276 in the J structure. That is to say, when the embodiment performs the gap 272, another gap 276 is formed in the stacked structure of the metal layer 248b and the metal heat sink. In the if light-emitting diode element 278, the gaps 272 and 276 are respectively formed on the two sides of the /-pole body wafer 228, and the gaps 272 and 276 are respectively; between the electrode pad 220 and the light-emitting diode wafer 228, And between the electrode pad/, the light-emitting one-pole wafer 228. Wherein, the gaps 272 and 276 φ both expose part of the package base 210a. In addition, the gaps 272 or 276 are arranged such that the electrode pads 218 and 22 on the package base 210a are not short-circuited by the underlying metal layer 248b and the metal heat sink 25b. Thus, the gap 272 or 276 can electrically separate the electrode pads 218 and 22 from the two sides of the gap 272 or 276. By the arrangement of the gaps 272 and 276, the electrode pad 218 can pass through the wire pin 268, the portion of the metal layer 24讣 outside the gap 276, and the portion of the metal heat sink 250b on the outside, and is electrically connected to one of the external power sources. • Sexual connection. On the other hand, the electrode pad 220 is electrically connected to the other electrode of the external power source through the wire pin 270, the portion of the metal layer 248b outside the gap 272, and the portion of the metal cavity 250b on the outside. In addition, since the gap 276 and the milk are respectively disposed between the lower surface of the light-emitting diode wafer 228 and the electrode electrodes 218 and 220, the heat generated when the light-emitting diode wafer 228 is operated is mainly caused by interstitial milk and The metal layer 248b is conductive between the metal layer 248b and the metal heat sink 25b. As such, for the LED 228, the metal layer is separated from the portion of the metal bulk (b) that conducts its power and heat. Therefore, the light-emitting diode element 201234684 piece 278 has the operational characteristics of thermoelectric separation. It can be seen from the above embodiments that one of the advantages of the present invention is that the metal is used as the body of the package base, so that the light-emitting diode element has better heat dissipation performance. According to the above embodiments, another advantage of the present invention is that the metal base plate is used to form the sealing base body, so that the cup-shaped groove of the sealing base can be smoothly formed by the simple processing method. hypotenuse. ^ In this way, not only can the light reflection effect of the LED chip be improved. #: The required light shape and brightness can be greatly reduced, and the complexity of the package base 2 can be greatly reduced, and the manufacturing cost can be effectively reduced. According to the above embodiments, another advantage of the present invention is that the metal substrate can be formed by a simple machining method when the light-emitting diode chip can be fabricated on the metal substrate of the package base. Make the wire pins of the body part of the hairpin. Therefore, the conductor pins of the light-emitting diode element are easy to fabricate. While the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and any of those skilled in the art can make various modifications without departing from the spirit and scope of the invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A cross-sectional view of the body element. 201234684 Figures 2A through 2J are cross-sectional views showing a process of a light emitting diode device in accordance with an embodiment of the present invention. Figure 3 is a cross-sectional view showing a light emitting diode element in accordance with another embodiment of the present invention. 4 is a view showing a luminescence according to still another embodiment of the present invention.

A cross-sectional view of a diode element. [Main component symbol description] 1〇〇: LED component 104: package base 108a: lead 110: metal heat transfer block 114: wire 118: recess 200a: metal substrate 202: surface 206: through slot 210: package Base 210b: package base 214: side wall 218: electrode pad 222: temporary substrate 226: south molecular material layer 230: substrate 234: light-emitting layer 102: light-emitting diode wafer 106: reflective layer 108b: lead 112: lead frame 116: encapsulant 200: metal plate 200b: metal substrate 204: surface 208: insulating layer 210a: package base 212: groove 216: reflective layer 220: electrode pad 224: surface 228: light emitting diode wafer 232: first Electrical semiconductor layer 236: second electrical semiconductor layer 20 201234684 238: first electrical electrode 240: 242: surface 244: 246: surface 248: 248a: metal layer 248b 250: metal heat sink 250a 250b: metal heat sink 251 252: connecting wire 254 256 : connecting wire 258 260 : encapsulant 262 264 : through hole 266 268 : wire pin 270 272 : gap 274 276 : gap 278 Θ : angle second electrical electrode surface metal layer: metal layer: gold Heat sink surface of the connecting member through hole conductor wire connecting the light emitting diode lead pin light emitting diode element emitting diode element

twenty one

Claims (1)

201234684 VII. Patent application scope: 1. A light-emitting diode component, comprising: a metal heat sink; a metal layer covering the metal heat sink; a package base disposed on the metal layer and having a a recess, wherein the package base comprises a metal substrate, and an insulating layer covers the metal substrate; a light emitting diode chip is disposed in the recess, wherein the light emitting diode chip has different electrical properties a first electrical electrode and a second electrical electrode; a first electrode pad and a second electrode pad are disposed on the package base, and respectively the first electrical electrode and the second electrical electrode An electrical connection; and an encapsulant covering the recess and the LED chip. 2. The light-emitting diode component of claim 1, wherein the material of the metal substrate comprises aluminum or copper. 3. The light-emitting diode component of claim 1, wherein the material of the insulating layer comprises aluminum oxide, tantalum nitride or hafnium oxide. 4. The light emitting diode component of claim 1, further comprising two connecting wires, respectively connecting the first electrode pad and the second electrode pad to an external power source. The illuminating diode component of claim 1, wherein the metal heat sink and the metal layer further comprise a first gap to electrically separate the first electrode pad from the second electrode pad. Two sides of the first gap; and the package base further has two through holes penetrating the package base, and the package base includes two wire pins respectively disposed in the through holes to the first electrode pad And the second electrode pad is electrically connected to the metal heat sinks on the sides of the first gap, respectively. 6. The light emitting diode device of claim 5, wherein the metal heat sink and the metal layer further comprise a second gap, and the first gap and the second gap are respectively located on the light emitting diode chip Two sides. 7. The light emitting diode device of claim 1, further comprising a reflective layer overlying the sidewall of the recess. 8. A method of fabricating a light emitting diode device, comprising: providing a package base, wherein the package base has at least one recess, and the package base comprises a metal substrate, and an insulating layer covers the Forming a first electrode pad and a second electrode pad on the package base; providing a temporary substrate, wherein the temporary substrate is provided with a polymer material layer; 23 201234684 the package base and at least one light emitting a diode chip is embedded in the polymer material layer, and the LED chip is located in the recess, wherein the LED chip has one of different electrical properties, a first electrical electrode and a second An electric electrode is formed on the polymer material layer, the package base and the light emitting diode wafer; forming a metal heat sink on the metal layer; removing the temporary substrate and the polymer material a layer to expose the first electrical electrode, the second electrical electrode, the first electrode pad and the second electrode pad; and the first electrical electrode and the second electrical electrode respectively Electricity The pole pad and the second electrode pad are electrically connected; and an encapsulant is formed to cover the recess and the LED wafer. 9. The method of fabricating a light emitting diode device according to claim 8, wherein the step of providing the package base comprises: φ providing a metal plate; forming a through groove in the metal plate to form the metal substrate; And forming the insulating layer to cover the metal substrate. 10. The method of fabricating a light-emitting diode element according to claim 9, wherein the material of the metal plate comprises aluminum; 24 201234684 the step of forming the through-groove comprises using a machining method; and the step of forming the insulating layer Including an anode treatment method to form the oxide layer as the insulating layer. 11. The method of fabricating a light emitting diode device according to claim 9, wherein the material of the metal plate comprises copper; the step of forming the through hole comprises using a machining method; and the step of forming the insulating layer by using φ comprises utilizing A deposition method to form the insulating layer. 12. The method of fabricating a light emitting diode device according to claim 9, wherein the step of providing the package base further comprises forming a two-pass hole through the metal plate and respectively located before the step of forming the insulating layer The two sides of the groove; before the step of forming the metal layer, the method for fabricating the LED component further comprises forming two wire pins respectively located in the through holes, wherein the wire pins are adapted to respectively The first electrode pad and the second electrode pad are electrically connected to the metal layer; and the step of forming the metal layer and the step of forming the metal heat sink comprise forming a first gap and penetrating the metal heat sink and the metal layer In one of the stacked structures, the first electrode pad and the second electrode pad are electrically separated from the two sides of the first gap. S 25 201234684 * tf 13. The step of forming the metal layer in the fabrication of the light-emitting diode element according to claim 12 is further included in the step of forming the metal heat sink: forming a second gap In the stacked structure, the first gap disk 兮 first gap is located on two sides of the light emitting diode chip. &lt; I4. The method for fabricating the LED component according to claim 12, wherein the step of forming the first gap includes using a mechanically-assisted Fanglu waterjet laser cutting method in the stack structure The method of manufacturing the light-emitting diode element according to claim 12, wherein the step of forming the first gap is formed when the metal layer and the metal cavity are grown. In the stacked structure, the method of fabricating the LED component according to claim 8, wherein the step of providing a package base comprises forming a reflective layer overlying the sidewall of the recess. The method for fabricating a light-emitting diode element according to claim 8, wherein the polymer material layer comprises a photoresist or a hot melt adhesive. 18. The method for fabricating the light-emitting diode element according to claim 8, The first electrode 塾 and the second electrode 分别 are respectively connected to an external power source by a connecting wire. S 26