CN102623609A - Light emitting diode element and manufacturing method thereof - Google Patents
Light emitting diode element and manufacturing method thereof Download PDFInfo
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- CN102623609A CN102623609A CN2011101350009A CN201110135000A CN102623609A CN 102623609 A CN102623609 A CN 102623609A CN 2011101350009 A CN2011101350009 A CN 2011101350009A CN 201110135000 A CN201110135000 A CN 201110135000A CN 102623609 A CN102623609 A CN 102623609A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 194
- 239000002184 metal Substances 0.000 claims abstract description 194
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000084 colloidal system Substances 0.000 claims abstract description 15
- 238000005538 encapsulation Methods 0.000 claims description 95
- 238000001816 cooling Methods 0.000 claims description 49
- 239000002861 polymer material Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 238000003754 machining Methods 0.000 claims description 13
- 238000012856 packing Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- 238000004806 packaging method and process Methods 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 5
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- 239000011651 chromium Substances 0.000 description 3
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- 239000004954 Polyphthalamide Substances 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a light-emitting diode element and a manufacturing method thereof. The light emitting diode element comprises a metal heat dissipation seat, a metal layer, a packaging base, a light emitting diode chip, a first electrode pad, a second electrode pad and a packaging colloid. The metal layer covers the metal heat sink. The packaging base is arranged on the metal layer and is provided with a groove. The package base comprises a metal substrate and an insulating layer covering the metal substrate. The light emitting diode chip is arranged in the groove and provided with a first electric property electrode and a second electric property electrode which have different electric properties. The first electrode pad and the second electrode pad are arranged on the packaging base and are respectively electrically connected with the first electrical electrode and the second electrical electrode. The packaging colloid wraps the groove and the light emitting diode chip.
Description
Technical field
The present invention relates to a kind of light-emitting component, and particularly relate to a kind of light-emitting diode (LED) element and preparation method thereof.
Background technology
Please with reference to Fig. 1, it is the cutaway view that illustrates a kind of existing light-emitting diode.This light-emitting diode 100 mainly comprises light-emitting diode chip for backlight unit 102, encapsulation base 104, lead 114, lead frame 112 and packing colloid 116.In this light-emitting diode 100, lead frame 112 comprises lead foot 108a and 108b and metal heat-conducting piece 110.Wherein, lead foot 108b engages with metal heat-conducting piece 110, and lead foot 108a then electrically separates with metal heat-conducting piece 110 and lead foot 108b.
Encapsulation base 104 combines with lead frame 112, but exposes the part of bottom surface of a part and the metal heat-conducting piece 110 of each lead foot 108a and 108b.In addition, encapsulation base 104 has groove 118, and its further groove 118 exposes the part on surface of a part and lead foot 108a on surface of the metal heat-conducting piece 110 of encapsulation base 104.
Light-emitting diode chip for backlight unit 102 is arranged in the groove 118 of encapsulation base 104, and is fixed on the surface that 110 rounds grooves 118 of metal heat-conducting piece are exposed.The mode that light-emitting diode chip for backlight unit 102 can pass through lead 114 and directly engage with metal heat-conducting piece 110, and be electrically connected with lead foot 108a and 108b respectively.Therefore, via lead foot 108a and 108b, external power source can be supplied electric power and give light-emitting diode chip for backlight unit 102, makes light-emitting diode chip for backlight unit 102 luminous.
Be typically provided with reflector 106 on the sidewall of the groove 118 of encapsulation base 104; Light in order to light-emitting diode chip for backlight unit 102 is launched towards groove 118 sidewalls reflects towards the front of light-emitting diode 100, and can improve the light taking-up efficient of light-emitting diode 100.116 of packing colloids fill up in the groove 118, with the surface that envelopes the metal heat-conducting piece 110 that light-emitting diode chip for backlight unit 102, lead 114, reflector 106 and groove 118 exposed and the surface of lead foot 108a.
In order to solve the heat dissipation problem that light-emitting diode chip for backlight unit 102 is caused under big current practice, lead frame 112 has the design of metal heat-conducting piece 110.Utilize metal heat-conducting piece 110, can the heat that light-emitting diode chip for backlight unit 102 runnings are produced down be derived.Thus, the accumulation of heat light-emitting diode chip for backlight unit 102 that is produced in the time of can avoiding operating, and then luminous efficiency and the reliability that can promote light-emitting diode chip for backlight unit 102.
Yet, in 112 designs of such lead frame, owing to metal heat-conducting piece 110 interconnects with lead foot 108b, but but have different-thickness, so can significantly increase lead frame 112 and make the degree of difficulty of manufacture crafts.
In addition, encapsulation base 104 is to utilize will gather-neighbour-benzenedicarboxamide (Polyphthalamide; PPA) mode of material injection mo(u)lding is made.Yet PPA material radiating effect is not good, so the encapsulation base 104 effective dissipation of heat that can't light-emitting diode chip for backlight unit 102 running be produced.
At present, in order to solve heat dissipation problem, and adopt ceramic material, for example LTCC (Low Temperature Co-fire Ceramic; LTCC), be used as the material of encapsulation base.Because ceramic material has good heat dissipation characteristics, therefore be used as the material of encapsulation base with ceramic material, can help the heat radiation of light-emitting diode.
Yet because mostly low-temperature co-burning ceramic material itself is the multiple-level stack structure, and quality is more crisp, therefore is difficult for being made into encapsulation base.Particularly, mostly utilize laser mode to make the reverberation bowl cup of encapsulation base at present, but not only cost of manufacture is very high for laser mode, also can't makes the sidewall of the reverberation bowl cup of level and smooth and tool special angle.Thus, can cause the reflection angle of bright dipping of light-emitting diode chip for backlight unit not good, and then influence the light shape of light-emitting diode, and cause the brightness of light-emitting diode to descend.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of light-emitting diode and manufacture method, it is the body that the employing metal is used as encapsulation base, so light-emitting diode can have preferable heat dissipation.
The object of the present invention is to provide a kind of light-emitting diode and manufacture method, it utilizes sheet metal to make the encapsulation base body, therefore utilizes simple machining mode can form the hypotenuse of the bowl cup-shaped groove of encapsulation base smoothly.Thus, not only can promote the bright dipping reflecting effect of light-emitting diode chip for backlight unit, obtain required bright dipping light shape and brightness, more can significantly reduce the complexity of the groove making of encapsulation base, effectively reduce cost of manufacture.
Another purpose of the present invention is to provide a kind of light-emitting diode and manufacture method; When it can make the groove of light-emitting diode chip for backlight unit setting on the metal substrate of encapsulation base, on metal substrate, make the lead pin of light-emitting diode simultaneously with simple machining mode.Therefore, the lead pin of light-emitting diode is made easily.
According to above-mentioned purpose of the present invention, a kind of light-emitting diode is proposed.This light-emitting diode comprises a metal cooling seat, a metal level, an encapsulation base, a light-emitting diode chip for backlight unit, one first electronic pads and one second electronic pads and a packing colloid.Metal level covers on the metal cooling seat.Encapsulation base is located on the metal level, and has a groove.Wherein, encapsulation base comprises a metal substrate and an insulating barrier envelopes metal substrate.Light-emitting diode chip for backlight unit is located in the groove.Wherein, light-emitting diode chip for backlight unit has the different electrical first electrical electrode and the second electrical electrodes.First electronic pads and second electronic pads are located on the encapsulation base, and are connected with the second electrical electrode electricity with the first electrical electrode respectively.Packing colloid envelopes groove and light-emitting diode chip for backlight unit.
According to one embodiment of the invention, the material of above-mentioned metal substrate can comprise aluminium or copper.In addition, the material of insulating barrier can comprise aluminium oxide, silicon nitride or silicon dioxide.
According to another embodiment of the present invention, above-mentioned metal cooling seat and metal level also include first gap, so that first electronic pads and second electronic pads electrically are located away from two sides in first gap.In addition, encapsulation base has more two through holes and runs through encapsulation base, and encapsulation base comprises two lead pins and be located at respectively in the aforementioned through-hole, first electronic pads and second electronic pads are electrically connected to the metal cooling seat of two sides that are positioned at first gap respectively.
According to another embodiment of the present invention, above-mentioned metal cooling seat and metal level also include second gap, and first gap and second gap lay respectively at two sides of light-emitting diode chip for backlight unit.
According to above-mentioned purpose of the present invention, other proposes a kind of manufacture method of light-emitting diode, comprises the following step.One encapsulation base is provided, and wherein this encapsulation base has at least one groove, and encapsulation base comprises a metal substrate and an insulating barrier envelopes metal substrate.Form one first electronic pads and one second electronic pads on encapsulation base.One temporary substrate is provided, and wherein this temporary substrate is provided with a polymer material layer.Encapsulation base and at least one light-emitting diode chip for backlight unit are embedded in the polymer material layer, and make light-emitting diode chip for backlight unit be arranged in groove.Wherein, this light-emitting diode chip for backlight unit has different electrical one first electrical electrode and one second electrical electrodes.Forming a metal level covers on polymer material layer, encapsulation base and the light-emitting diode chip for backlight unit.Form a metal cooling seat on metal level.Remove temporary substrate and polymer material layer, to expose the first electrical electrode, the second electrical electrode, first electronic pads and second electronic pads.The first electrical electrode and the second electrical electrode are electrically connected with first electronic pads and second electronic pads respectively.Form a packing colloid and envelope groove and light-emitting diode chip for backlight unit.
According to one embodiment of the invention, the above-mentioned step of encapsulation base that provides can comprise: a metal plate is provided; Form one and run through groove in metal plate, to form this metal substrate; And the formation insulating barrier envelopes metal substrate.
According to another embodiment of the present invention; The material of above-mentioned metal plate can comprise aluminium; The step that formation runs through groove comprises a machining mode capable of using, and the step that forms insulating barrier can comprise the anode treatment mode of utilizing, and is used as insulating barrier to form an alumina layer.
According to another embodiment of the present invention, the material of above-mentioned metal plate can comprise copper, form the step that runs through groove and can comprise the machining mode of utilizing, and the step that forms insulating barrier can comprise and utilizes a depositional mode, to form insulating barrier.
According to an embodiment more of the present invention, before the above-mentioned step that encapsulation base is provided can also be contained in the step that forms insulating barrier, form two through holes and run through metal plate and lay respectively at two sides that run through groove.And; Before the step that forms metal level; The manufacture method of above-mentioned light-emitting diode can more comprise formation two lead pins and lay respectively in the aforesaid through hole, and wherein these lead pins are suitable for respectively first electronic pads and second electronic pads are electrically connected to metal level.In addition; The step of above-mentioned formation metal level and the step that forms metal cooling seat can comprise and form one first gap and be arranged in the stacked structure that metal cooling seat and metal level constitute, so that first electronic pads and second electronic pads electrically are located away from two sides in first gap.
According to an embodiment more of the present invention, the step of above-mentioned formation metal level can more comprise formation one second gap with the step that forms metal cooling seat and be arranged in the stacked structure, and first gap and second gap lay respectively at two sides of light-emitting diode chip for backlight unit.
The present invention is used as the body of encapsulation base through adopting sheet metal, can take into account the reduction of making complexity of groove reflecting surface of lifting and encapsulation base of the radiating effect of light-emitting diode simultaneously.
Description of drawings
For letting above-mentioned and other purposes of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Fig. 1 is the cutaway view of existing light-emitting diode;
Fig. 2 A to Fig. 2 J is the manufacture craft cutaway view of a kind of light-emitting diode of an execution mode of the present invention;
Fig. 3 is the cutaway view of a kind of light-emitting diode of another embodiment of the present invention;
Fig. 4 is the cutaway view of a kind of light-emitting diode of another embodiment of the invention.
The main element symbol description
100: light-emitting diode 102: light-emitting diode chip for backlight unit
104: encapsulation base 106: reflector
108a: lead foot 108b: lead foot
110: metal heat-conducting piece 112: lead frame
114: lead 116: packing colloid
118: groove 200: metal plate
200a: metal substrate 200b: metal substrate
202: surface 204: surface
206: run through groove 208: insulating barrier
210: encapsulation base 210a: encapsulation base
210b: encapsulation base 212: groove
214: sidewall 216: reflector
218: electronic pads 220: electronic pads
222: temporary substrate 224: surface
226: polymer material layer 228: light-emitting diode chip for backlight unit
230: 232: the first electrical semiconductor layers of substrate
234: 236: the second electrical semiconductor layers of luminescent layer
240: the second electrical electrodes of 238: the first electrical electrodes
242: surface 244: surface
246: surface 248: metal level
248a: metal level 248b: metal level
250: metal cooling seat 250a: metal cooling seat
250b: metal cooling seat 251: surface
252: connect lead 254: connect lead
256: connect lead 258: connect lead
260: packing colloid 262: light-emitting diode
264: through hole 266: through hole
268: lead pin 270: the lead pin
272: gap 274: light-emitting diode
276: gap 278: light-emitting diode
θ: angle
Embodiment
Please with reference to Fig. 2 A to Fig. 2 J, it is the manufacture craft cutaway view that illustrates according to a kind of light-emitting diode of an execution mode of the present invention.In this execution mode, when making the light-emitting diode 262 shown in Fig. 2 J, can make and provide encapsulation base 210 (asking earlier) earlier with reference to Fig. 2 C.Shown in Fig. 2 A, when making this encapsulation base 210, metal plate 200 is provided earlier.The preferable degree of depth that is about encapsulation groove or encapsulation bowl cup of the thickness of metal plate 200.Metal plate 200 tool two opposite surfaces 202 and 204.The material of metal plate 200 can adopt the metal of easy processing.In one embodiment, the material of metal plate 200 can for example be an aluminium.In another embodiment, the material of metal plate 200 can for example be a copper.
Then, shown in Fig. 2 B, utilize for example machining mode, run through groove 206, be used to form metal substrate 200a and on the predeterminated position of metal plate 200, form.Run through groove 206 through between the surface 202 and 204 of metal plate 200.Run through groove 206 and can for example be bowl cup type.In one embodiment, the scope of angle theta of lower surface 204 that runs through sidewall inclined-plane and the metal plate 200 of groove 206 can for example be 0 °＜angle theta＜90 °, and the scope of angle theta is preferable can be between 30 ° and 60 °.
Next, form insulating barrier 208 and envelope metal substrate 200a, and form encapsulation base 210.Wherein, this insulating barrier 208 envelopes all surface of metal substrate 200a.In addition, because metal substrate 200a has the groove of running through 206, therefore coat encapsulation base 210 that a layer insulating 208 forms and also have groove 212 and be arranged in the encapsulation base 210 through surface at metal substrate 200a.
In one embodiment, the material of metal plate 200 can comprise aluminium, thereby for example anode treatment mode capable of using, on all surface of metal substrate 200, forms one deck aluminium oxide, is used as the material of insulating barrier 208.Because if the thickness of alumina layer is the too thick heat radiation and the reflecting effect that may influence metal base 210.Therefore, the thickness of may command alumina layer reduces the heat dissipation of 208 pairs of metal bases 210 of insulating barrier and the influence of reflectivity.In an example, the thickness of alumina layer can for example be controlled between 5 μ m to the 45 μ m.In addition; Owing to the easy black partially extinction effect that has of the appearance color of alumina layer, therefore in further embodiments, more optionally utilize for example sputter or vapor deposition mode; Form reflector 216 and cover on the sidewall 214 of groove 212, with the light reflectivity of the sidewall 214 that promotes groove 212.In an example, the material in reflector 216 can for example be titanium dioxide (TiO
2) or silver.
In another embodiment, the material of metal plate 200 can comprise copper, thereby for example depositional mode capable of using formation one deck silicon nitride or silicon dioxide, is used as the material of insulating barrier 208.In an example, depositional mode can for example be electron beam evaporation plating (E-gun Evaporation) deposition or sputter (Sputtering) depositional mode.
Then, shown in Fig. 2 C, for example deposition capable of using, photoetching and etching process; Deposition and floating (Lift-off) manufacture craft that leaves; Or mode such as wire mark manufacture craft, form electronic pads 218 and 220 on encapsulation base 210.Wherein, it is other that electronic pads 218 and 220 is adjacent to groove 212, and be positioned at the relative both sides of groove 212.
Then, temporary substrate 222 is provided.Wherein, this temporary substrate 222 can for example be a flat board.Temporary substrate 222 is preferably the material of the comparatively hard and acid and alkali-resistance of employing.Next, utilize for example coating method, form polymer material layer 226 on the surface 224 of temporary substrate 222.In one embodiment, polymer material layer 226 can for example comprise photoresist or PUR.Then, shown in Fig. 2 D, encapsulation base 210 and light-emitting diode chip for backlight unit 228 are pressed in the surface 242 of polymer material layer 226.And, shown in Fig. 2 E, encapsulation base 210 and light-emitting diode chip for backlight unit 228 are embedded in the polymer material layer 226, and make light-emitting diode chip for backlight unit 228 be arranged in the groove 212 of encapsulation base 210.In one embodiment, in the time of in being embedded at polymer material layer 226, the lower surface 246 of encapsulation base 210 and the lower surface 244 of light-emitting diode chip for backlight unit 228 are preferably approximately and flush.
In one embodiment, light-emitting diode chip for backlight unit 228 mainly can comprise substrate 230, the first electrical semiconductor layer 232, luminescent layer 234, the second electrical semiconductor layer 236 and the first electrical electrode 238 and the second electrical electrode 240.Wherein, The first electrical semiconductor layer 232 is positioned on the substrate 230; Luminescent layer 234 is positioned on the first electrical semiconductor layer 232 of part, and the second electrical semiconductor layer 236 is positioned on the luminescent layer 234, and the first electrical electrode 238 is positioned on another part that the first electrical semiconductor layer 232 exposes; The second electrical electrode 240 then is positioned on the second electrical semiconductor layer 236 of part, shown in Fig. 2 D.In the present invention, first electrically is different electrical with second electrically.For example, first electrically with second electrical one be the n type wherein, another person then is the p type.
Shown in Fig. 2 D; When being embedded at encapsulation base 210 and light-emitting diode chip for backlight unit 228 in the polymer material layer 226; It is a side that is provided with the first electrical electrode 238 and the second electrical electrode 240 with the side that encapsulation base 210 is provided with electronic pads 218 and 220 and light-emitting diode chip for backlight unit 228; Mode towards the surface 242 of polymer material layer 226 is pressed in the polymer material layer 226.Therefore, shown in Fig. 2 E, the electronic pads 218 of encapsulation base 210 and the 220 and first electrical electrode 238 and the second electrical electrode 240 all are embedded in the polymer material layer 226.
In one embodiment; When light-emitting diode chip for backlight unit 228 is set with encapsulation base 210; Can earlier encapsulation base 210 be embedded in polymer material layer 226, again light-emitting diode chip for backlight unit 228 be embedded in the polymer material layer 226 in the groove 212 of encapsulation base 210.In another embodiment, can earlier light-emitting diode chip for backlight unit 228 be embedded in polymer material layer 226, again encapsulation base 210 be embedded in polymer material layer 226, and make light-emitting diode chip for backlight unit 228 be arranged in the groove 212 of encapsulation base 210.In more another embodiment, can simultaneously light-emitting diode chip for backlight unit 228 and encapsulation base 210 be embedded in polymer material layer 226.
In the present invention, encapsulation base can have a plurality of grooves, and can provide several light-emitting diode chip for backlight unit to be separately positioned in these grooves.Thus, can make a plurality of light-emitting diodes simultaneously.
Then, shown in Fig. 2 F, on the lower surface 244 of the surface 242 that utilizes depositional mode for example to form metal level 248 to cover polymer material layer 226, the lower surface 246 of encapsulation base 210 and light-emitting diode chip for backlight unit 228.This depositional mode can for example be vapor deposition, sputter, electroless-plating (electroless plating) or electron beam evaporation plating.In one embodiment, metal level 248 can be a simple layer structure.In another embodiment, metal level 248 can be a multilayer materials structure.The thickness of metal level 248 is preferably and is controlled at less than 3 μ m.
In one embodiment; The material of metal level 248 can for example be tin indium oxide (ITO), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), nickel (Ni), chromium (Cr), titanium (Ti), tantalum (Ta), aluminium (Al), indium (In), tungsten (W), copper (Cu), perhaps contains the alloy of nickel, chromium, titanium, tantalum, aluminium, indium, tungsten or copper.In a preferred embodiment, the material of metal level 248 can adopt the metal material of highly reflective, for example silver, platinum, aluminium, gold, nickel or titanium.
Next, shown in Fig. 2 G, for example utilizing, depositional mode forms metal cooling seat 250 on metal level 248.In a preferred embodiment, this depositional mode can adopt plating mode.Metal cooling seat 250 can be comparatively thicker, to provide light-emitting diode chip for backlight unit 228 bigger heat dissipation.In one embodiment, the thickness of metal cooling seat 250 can be between 50 μ m to 500 μ m.After accomplishing the deposition of metal cooling seat 250, can further grind the surface 251 of metal cooling seat 250.After grinding, the roughness on the surface 251 of metal cooling seat 250 (from the peak on surface 251 to minimum point) between
between the 10 μ m.
Next; Shown in Fig. 2 H; On encapsulation pedestal 210, remove temporary substrate 222 and polymer material layer 226, and expose metal level 248, light-emitting diode chip for backlight unit 228 and its first electrical electrode 238 and the second electrical electrode 240 and encapsulation base 210 and its power on polar cushion 218 and 220 in the groove 212.In one embodiment, when the material of polymer material layer 226 was PUR, mode of heating capable of using made polymer material layer 226 present molten condition, and temporary substrate 222 is peeled off from encapsulating on the pedestal 210.In another embodiment, when the material of polymer material layer 226 was photoresist, capable of using delustering caused resist liquid removal polymer material layer 226, and temporary substrate 222 is peeled off from encapsulating on the pedestal 210.
Then; Shown in Fig. 2 I; For example utilizing, routing engages (wire-bonding) mode; To connect the first electrical electrode 238 and the electronic pads 218 and the second electrical electrode 240 and electronic pads 220 that lead 252 and 254 is connected light-emitting diode chip for backlight unit 228 respectively, be used to make the first electrical electrode 238 to be electrically connected with 220 with electronic pads 218 respectively with the second electrical electrode 240.Wherein, connecting lead 252 and 254 can for example be gold thread.In addition, in this execution mode, same for example routing juncture capable of using, and, respectively electronic pads 218 and 220 is connected to an external power source (not illustrating) to connect lead 256 and 258, portion's power supply provides light-emitting diode chip for backlight unit 228 electric power to utilize in addition.Likewise, connecting lead 256 and 258 can for example be gold thread.
Subsequently, packing colloid 260 is inserted in the groove 212 of encapsulation base 210, and the making of completion light-emitting diode 262.Shown in Fig. 2 J, packing colloid 260 fills up groove 212 fully, and envelopes light-emitting diode chip for backlight unit 228 in the groove 212 fully, and connects lead 252 and 254, and envelopes electronic pads 218 and 220 partly.Packing colloid 260 is preferably and envelopes electronic pads 218 and be connected lead 252 and 256 and engage parts and electronic pads 220 and be connected lead 254 and engage part with 258, to guarantee electronic pads 218 and to be connected lead 252 and 256 joint and electronic pads 220 and to be connected lead 254 and 258 engage.In one embodiment, can be doped with fluorescent material in the packing colloid 260, for example fluorescent material such as yttrium-aluminium-garnet (YAG) series or BOSE series.
Light-emitting diode of the present invention also can otherwise come to be connected with external power source, and need not through connecting lead.Please with reference to Fig. 3, it is the cutaway view that illustrates according to a kind of light-emitting diode of another embodiment of the present invention.In this execution mode, the framework of light-emitting diode 274 haply with above-mentioned execution mode in light-emitting diode 262 identical.So, the difference of light-emitting diode 262 and 274 between the two mainly is: encapsulation base 210a compared to encapsulation base more than 210 through hole 264 and 266, and through hole 264 and 266 is filled out respectively and is provided with lead pin 268 and 270; And the stacked structure that constituted compared to metal level 248 and metal cooling seat 250 of the stacked structure that constituted of metal level 248a and metal cooling seat 250a many gap 272.
Please when making encapsulation base 210a, can utilize for example machining mode simultaneously with reference to Fig. 2 A, Fig. 2 B and Fig. 3, when metal plate 200 formation run through groove 206, on the predeterminated position of metal plate 200, form two through holes 264 and 266 simultaneously.Wherein, through hole 264 and 266 runs through metal plate 200, and through hole 264 and 266 lays respectively at two sides that run through groove 206.Therefore, after to metal plate 200 machinings, formed metal substrate has more through hole 264 and 266 except running through groove 206.After through hole 264 and 266 forms, form all surface that insulating barrier 208 envelopes this metal substrate again, comprise the medial surface of through hole 264 and 266.The method that forms insulating barrier 208 can repeat no more at this like the mode of previous embodiment.And, above through hole 264 and 266, form electronic pads 218 and 220 respectively and cover through hole 264 and 266, and form encapsulation base 210a as shown in Figure 3.
In addition; Please be simultaneously with reference to Fig. 2 E, Fig. 2 F and Fig. 3; After encapsulation base 210a and light-emitting diode chip for backlight unit 228 be embedded at polymer material layer 226; Before forming metal level 248a, can utilize the for example mode of deposition earlier, form two lead pins 268 and 270 and be filled in respectively in through hole 264 and 266.In one embodiment, this depositional mode can be for example for electroplating or the electroless-plating mode.As shown in Figure 3, electronic pads 218 and 220 lays respectively on the opening of through hole 264 and 266 1 ends of encapsulation base 210a, and covers in the opening of through hole 264 and 266 respectively fully.Therefore, be respectively formed at the lead pin 268 and 270 in through hole 264 and 266, can contact with 220 with electronic pads 218 respectively, be electrically connected and produce.
After lead pin 268 and 270 forms, can form metal level 248a.Metal level 248a covers on the lower surface 246, lead pin 268 and 270 of lower surface 244, the encapsulation base 210a of light-emitting diode chip for backlight unit 228.Metal level 248a covers lead pin 268 and 270, and contacts with 270 with lead pin 268.Thus, lead pin 268 and 270 can be electrically connected to metal level 248a with electronic pads 218 and 220 respectively.Then, forming metal cooling seat 250a covers on the metal level 248a.
In one embodiment; When making metal level 248a and metal cooling seat 250a; Can form the continuous metal level of one deck (only illustrating the part of metal level 248a wherein) earlier, form the continuous metallic radiating layer of one deck (only illustrating the part of metal cooling seat 250a wherein) again and cover on this continuous metal level.Then, utilize for example machining mode or water cutter laser cutting mode, on the predeterminated position of this continuous metal level and the continuous stacked structure that metallic radiating layer constituted, form gap 272, and form metal level 248a and metal cooling seat 250a.
In another embodiment, when making metal level 248a and metal cooling seat 250a, electroless-plating mode capable of using, design makes metal level 248a and metal cooling seat 250 when growing up, just all comprise separative two parts.Thus, along with the growth of metal level 248a and metal cooling seat 250a, gap 272 can be formed in the stacked structure that metal level 248a and metal cooling seat 250a constituted simultaneously.
Through the setting in gap 272, electronic pads 218 can pass through the part of the metal level 248a of lead pin 268, gap 272 1 sides, the part of the metal cooling seat 250a of side therewith, is electrically connected and reach with an electrode of external power source.On the other hand, 220 of electronic padses can pass through the part of the metal level 248a of lead pin 270, gap 272 opposite sides, the part of the metal cooling seat 250a of side therewith, are electrically connected and reach with another electrode of external power source.
Light-emitting diode of the present invention also can comprise two gaps, and makes light-emitting diode have the thermoelectric service performance that separates.Please with reference to Fig. 4, it is the cutaway view that illustrates according to a kind of light-emitting diode of another embodiment of the invention.In this execution mode, the framework of light-emitting diode 278 haply with above-mentioned execution mode in light-emitting diode 274 identical.So; The difference of light-emitting diode 274 and 278 between the two mainly is: except gap 272, and the stacked structure that the stacked structure that metal level 248b and metal cooling seat 250b are constituted is constituted compared to metal level 248a and metal cooling seat 250a is many again gap 276.That is to say that this execution mode can be when making gap 272, in the stacked structure that metal level 248b and metal cooling seat 250b are constituted, produce another gap 276 in the lump.
In light-emitting diode 278; Gap 272 and 276 is respectively formed at by the both sides of light-emitting diode chip for backlight unit 228, and gap 272 and 276 is respectively between between electronic pads 220 and the light-emitting diode chip for backlight unit 228 and between electronic pads 218 and the light-emitting diode chip for backlight unit 228.Wherein, gap 272 and 276 all exposes the encapsulation base 210a of part.In addition, gap 272 or 276 setting can make the electronic pads 218 and 220 on the encapsulation base 210a can not cause short circuit because of the metal level 248b and the metal cooling seat 250b of below.Therefore, gap 272 or 276 can make electronic pads 218 and 220 electrically be located away from two sides of gap 272 or 276.
Through the setting of gap 272 and 276, electronic pads 218 can pass through the part of the metal level 248b in lead pin 268,276 outsides, gap, the part of metal cooling seat 250b in the outside therewith, is electrically connected and reach with an electrode of external power source.On the other hand, 220 of electronic padses can pass through the part of the metal level 248b in lead pin 270,272 outsides, gap, the part of metal cooling seat 250b in the outside therewith, are electrically connected and reach with another electrode of external power source.
In addition; Because separated respectively gap 276 and 272 of being provided with between light-emitting diode chip for backlight unit 228 belows and electronic pads 218 and 220; The heat that is produced when therefore light-emitting diode chip for backlight unit 228 turns round mainly is to conduct through metal level 248b between gap 272 and 276 and metal cooling seat 250b.Thus, for light-emitting diode chip for backlight unit 228, metal level 248b and its electric power of metal cooling seat 250b conduction are what to be separated with the part of heat.So light-emitting diode 278 has the thermoelectric service performance that separates.
Can know that by above-mentioned execution mode an advantage of the present invention is exactly because the employing metal is used as the body of encapsulation base, so light-emitting diode can have preferable heat dissipation.
Can know that by above-mentioned execution mode another advantage of the present invention is exactly because utilize sheet metal to make the encapsulation base body, therefore utilize simple machining mode can form the hypotenuse of the bowl cup-shaped groove of encapsulation base smoothly.Thus, not only can promote the bright dipping reflecting effect of light-emitting diode chip for backlight unit, obtain required bright dipping light shape and brightness, more can significantly reduce the complexity of the groove making of encapsulation base, effectively reduce cost of manufacture.
Can know by above-mentioned execution mode; Another advantage of the present invention is exactly that the while is made the lead pin of light-emitting diode on metal substrate with simple machining mode because can on the metal substrate of encapsulation base, make the groove that light-emitting diode chip for backlight unit is provided with the time.Therefore, the lead pin of light-emitting diode is made easily.
Though disclosed the present invention in conjunction with an above preferred embodiment; Yet it is not in order to limit the present invention; Anyly be familiar with this operator in this technical field; Do not breaking away from the spirit and scope of the present invention, can do various changes and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (18)
1. light-emitting diode comprises:
Metal cooling seat;
Metal level covers on this metal cooling seat;
Encapsulation base is located on this metal level, and has groove, and wherein this encapsulation base comprises metal substrate and insulating barrier, and it envelopes this metal substrate;
Light-emitting diode chip for backlight unit is located in this groove, and wherein this light-emitting diode chip for backlight unit has different electrical one first electrical electrode and one second electrical electrodes;
First electronic pads and one second electronic pads are located on this encapsulation base, and are connected with this second electrical electrode electricity with this first electrical electrode respectively; And
Packing colloid envelopes this groove and this light-emitting diode chip for backlight unit.
2. light-emitting diode as claimed in claim 1, wherein the material of this metal substrate comprises aluminium or copper.
3. light-emitting diode as claimed in claim 1, wherein the material of this insulating barrier comprises aluminium oxide, silicon nitride or silicon dioxide.
4. light-emitting diode as claimed in claim 1 also comprises two and connects lead, respectively this first electronic pads and this second electronic pads is connected to an external power source.
5. light-emitting diode as claimed in claim 1, wherein
This metal cooling seat and this metal level also include first gap, so that this first electronic pads and this second electronic pads electrically are located away from two sides in this first gap; And
This encapsulation base also has two through hole; Run through this encapsulation base; And this encapsulation base comprises two lead pins, is located at respectively in those through holes, this first electronic pads and this second electronic pads are electrically connected to this metal cooling seat of those sides that are positioned at this first gap respectively.
6. light-emitting diode as claimed in claim 5, wherein this metal cooling seat and this metal level also include second gap, and this first gap and this second gap lay respectively at the both sides of this light-emitting diode chip for backlight unit.
7. light-emitting diode as claimed in claim 1 also comprises the reflector, covers on the sidewall of this groove.
8. the manufacture method of a light-emitting diode comprises:
One encapsulation base is provided, and wherein this encapsulation base has at least one groove, and this encapsulation base comprises metal substrate and insulating barrier, envelopes this metal substrate;
Form one first electronic pads and one second electronic pads on this encapsulation base;
One temporary substrate is provided, and wherein this temporary substrate is provided with a polymer material layer;
This encapsulation base and at least one light-emitting diode chip for backlight unit are embedded in this polymer material layer, and make this light-emitting diode chip for backlight unit be arranged in this groove, wherein this light-emitting diode chip for backlight unit has the different electrical first electrical electrode and the second electrical electrodes;
Forming a metal level covers on this polymer material layer, this encapsulation base and this light-emitting diode chip for backlight unit;
Form a metal cooling seat on this metal level;
Remove this temporary substrate and this polymer material layer, to expose this first electrical electrode, this second electrical electrode, this first electronic pads and this second electronic pads;
This first electrical electrode and this second electrical electrode are electrically connected with this first electronic pads and this second electronic pads respectively; And
Form a packing colloid and envelope this groove and this light-emitting diode chip for backlight unit.
9. the manufacture method of light-emitting diode as claimed in claim 8 wherein provides the step of this encapsulation base to comprise:
One metal plate is provided;
Form one and run through groove in this metal plate, to form this metal substrate; And
Form this insulating barrier and envelope this metal substrate.
10. the manufacture method of light-emitting diode as claimed in claim 9, wherein
The material of this metal plate comprises aluminium;
Form this step that runs through groove and comprise the machining mode of utilizing; And
The step that forms this insulating barrier comprises the anode treatment mode of utilizing, and is used as this insulating barrier to form an alumina layer.
11. the manufacture method of light-emitting diode as claimed in claim 9, wherein
The material of this metal plate comprises copper;
Form this step that runs through groove and comprise the machining mode of utilizing; And
The step that forms this insulating barrier comprises utilizes a depositional mode, to form this insulating barrier.
12. the manufacture method of light-emitting diode as claimed in claim 9, wherein
Before providing the step of this encapsulation base also to be contained in the step that forms this insulating barrier, form two through hole, run through this metal plate and lay respectively at the both sides that this runs through groove;
Before the step that forms this metal level; The manufacture method of this light-emitting diode also comprises formation two lead pins; Lay respectively in those through holes, wherein those lead pins are suitable for respectively this first electronic pads and this second electronic pads are electrically connected to this metal level; And
The step that forms this metal level and the step that forms this metal cooling seat comprise and form one first gap and be arranged in the stacked structure that this metal cooling seat and this metal level constitutes, so that this first electronic pads and this second electronic pads electrically are located away from the both sides in this first gap.
13. the manufacture method of light-emitting diode as claimed in claim 12; The step that wherein forms this metal level also comprises formation one second gap with the step that forms this metal cooling seat and is arranged in this stacked structure, and this first gap and this second gap lay respectively at the both sides of this light-emitting diode chip for backlight unit.
14. the manufacture method of light-emitting diode as claimed in claim 12, the step that wherein forms this first gap comprise the mode of utilizing a machining mode or a water cutter laser cutting, in this stacked structure, form this first gap.
15. the manufacture method of light-emitting diode as claimed in claim 12, the step that wherein forms this first gap are when this metal level and the growth of this metal cooling seat, are formed on simultaneously in this stacked structure.
16. the manufacture method of light-emitting diode as claimed in claim 8 wherein provides the step of this encapsulation base to comprise to form a reflector to cover on the sidewall of this groove.
17. the manufacture method of light-emitting diode as claimed in claim 8, wherein this polymer material layer comprises photoresist or PUR.
18. the manufacture method of light-emitting diode as claimed in claim 8 also comprises and utilizes two connection leads respectively this first electronic pads and this second electronic pads to be connected to an external power source.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100103924A TW201234684A (en) | 2011-02-01 | 2011-02-01 | Light-emitting diode device and method for manufacturing the same |
| TW100103924 | 2011-02-01 |
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| Publication Number | Publication Date |
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| CN102623609A true CN102623609A (en) | 2012-08-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990854A (en) * | 2021-10-27 | 2022-01-28 | 深圳利亚德光电有限公司 | Display structure and manufacturing method thereof |
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| US20070296074A1 (en) * | 2006-06-26 | 2007-12-27 | National Cheng Kung University | Embedded Metal Heat Sink for Semiconductor Device and Method for Manufacturing the Same |
| TWM366640U (en) * | 2009-04-27 | 2009-10-11 | Bao-Long Lin | Plate-shaped heat dissipation structure for LED |
| CN201434352Y (en) * | 2009-05-08 | 2010-03-31 | 琉明斯光电科技股份有限公司 | Light-emitting diode encapsulation structure and light bar applying same |
| CN101924175A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Packaging device of light-emitting diode and packaging method thereof |
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2011
- 2011-02-01 TW TW100103924A patent/TW201234684A/en unknown
- 2011-05-24 CN CN2011101350009A patent/CN102623609A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070296074A1 (en) * | 2006-06-26 | 2007-12-27 | National Cheng Kung University | Embedded Metal Heat Sink for Semiconductor Device and Method for Manufacturing the Same |
| TWM366640U (en) * | 2009-04-27 | 2009-10-11 | Bao-Long Lin | Plate-shaped heat dissipation structure for LED |
| CN201434352Y (en) * | 2009-05-08 | 2010-03-31 | 琉明斯光电科技股份有限公司 | Light-emitting diode encapsulation structure and light bar applying same |
| CN101924175A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Packaging device of light-emitting diode and packaging method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113990854A (en) * | 2021-10-27 | 2022-01-28 | 深圳利亚德光电有限公司 | Display structure and manufacturing method thereof |
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| TW201234684A (en) | 2012-08-16 |
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Application publication date: 20120801 |