KR20090102450A - Metal substrate and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A metal substrate and a method for manufacturing the same are provided to quickly discharge heat generated in a high power semiconductor device when a high power semiconductor is operated by only a substrate by using metal as a body of the substrate. CONSTITUTION: A metal board includes a body, a penetration hole, an insulation film and a lead(106). The body includes metal. The penetration hole penetrates the body. The insulating layer covers a surface of the body. A lead is formed on an upper surface and a lower surface through the penetration hole. A high power semiconductor package includes a substrate(100), a light emitting diode(200), a wiring(300), and a molding(400). On the substrate, the penetration hole, the lead and a reflecting body(109) are formed. A light emitting chip is mounted on the lead. The wiring connects the light emitting chip with a circuit. The molding seals the light emitting chip and the wiring.

Description

Metal substrate and its manufacturing method {METAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal substrate and a method for manufacturing the same, and more particularly, to a metal substrate having a lead formed by a semiconductor process and a method for manufacturing the same.

A semiconductor device is one of electronic components that implements electronic devices such as a power device, a light emitting device, and a light receiving device on a predetermined substrate by using semiconductor processing technology. For example, a power device includes a transistor, a MOSFET, an Insulated Gate Bipolar Transistor (IGBT), a Schottky diode, and the like, and a light receiving device includes a solar cell, a photo sensor, and the like on a substrate. Such a semiconductor device requires a power source to operate, and upon application of the power source, the semiconductor device generates heat with operation. At this time, in general, such a semiconductor device is mounted on a separate packaging member, for example, a member such as a substrate to be packaged, that is, manufactured as a device package.

The device package according to the related art has no problem even when a low-power semiconductor chip is used, even if a resin substrate having a low thermal conductivity is used as the substrate. However, a device package using a high power semiconductor chip has a deterioration problem due to the high heat generated from the semiconductor chip. Such a degradation problem may result in damage to the semiconductor chip or deterioration of the substrate during the soldering process due to failure to properly release heat generated from the semiconductor chip during the operation of the device package. In addition, the device package according to the prior art has a problem that the heat dissipation only in the lower direction of the device package when the device package is mounted on a separate substrate, and the heat dissipation is hardly emitted in the side direction of the device package. In addition, the device package using the lead according to the prior art is difficult to miniaturize due to the thickness and size of the lead and has a high manufacturing cost.

It is an object of the present invention to provide a metal substrate having excellent heat dissipation performance and a method of manufacturing the same.

Another object of the present invention is to provide a metal substrate and a method for manufacturing the same, which can prevent a defect due to deterioration.

Another object of the present invention is to provide a metal substrate which can be miniaturized, easy to manufacture, and low in cost, and a method of manufacturing the same.

In order to achieve the above object, the present invention provides a body including a metal, a through hole penetrating the body, an insulating film covering the surface of the body, and formed on the upper and lower surfaces of the body through the through hole. Provided is a metal substrate comprising a lead.

The body may be an alloy including at least one of aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), and titanium (Ti). The insulating layer may be a ceramic material, a polymer material, or a ceramic. It is preferable that the polymer material comprises multiple layers formed on the material, wherein the ceramic material comprises an oxide or nitride, and the insulating film is thinner than the body. In this case, the polymer material is in a thin film form, and the polymer material in the thin film form is effectively formed so that a portion of the body is exposed to mount the semiconductor chip.

The body may further include a reflector formed by recessing the upper surface. In this case, a portion of the lead may be formed on the surface of the reflector, the reflector may further include a reflective layer formed on the surface, and the reflective layer may include silver (Ag), and a barrier formed under the reflective layer. It may further comprise a layer.

In addition, the body may include a first body having a flat top, and a second body joined to the first body and having an opening. In this case, the lead may be formed between the first body and the second body to be exposed to one side and the other side of the body.

In addition, the present invention comprises the steps of preparing a body comprising a metal; Forming a through hole in the body; Forming an insulating film on the surface of the body; Forming a lead in the body; provides a method for producing a metal substrate comprising a. Forming a through hole in the body; Forming a recessed reflective portion in the body; may further include a. Forming an insulating film on the surface of the body; forming a ceramic material on the surface of the body by high temperature oxidation, anodizing, CVD, PECVD, or sol-gel method; Alternatively, the method may include coating and baking a polymer material on the surface of the body. Forming a lead in the body; forming a seed layer on a surface of the body; And forming a lead on the seed layer. Forming a seed layer on the surface of the body; forming a first seed layer on the surface of the insulating film; Forming a second seed layer on the first seed layer; And forming a photoresist on the surface of the second seed layer. Forming a first seed layer on the surface of the insulating film; Titanium (Ti) layer or chromium (Cr) layer or tungsten (W) using sputtering, evaporation or CVD on the surface of the insulating film ) Or forming an alloy layer including at least one of titanium (Ti), chromium (Cr), and tungsten (W). Forming a second seed layer on the first seed layer; forming copper (Cu) on the surface of the first seed layer by sputtering, evaporation, or CVD; It may include. The method may include forming lead on the seed layer; forming a metal layer by electroplating on the second seed layer on which the photoresist is formed; and forming a reflective layer on the metal layer. However, the present invention is not limited thereto, and the method of forming a lead on the seed layer includes: forming a metal layer on the seed layer by a coating method including electroplating; Forming a photoresist on the metal layer and etching the metal layer to form a lead; It may include; forming a reflective layer on the lead by electroless plating. In addition, if necessary, a solder mask may be applied on the insulating film exposed between the leads exposed to the solder (leads formed on the lower surface of the body) to prevent unwanted electrical connection between the leads that may occur in the soldering process.

In addition, the present invention comprises the steps of preparing a first body and a second body; Forming an insulating film on the surfaces of the first body and the second body; Forming a lead in the first body; Combining the first body and the second body provides a method of manufacturing a metal substrate comprising a. Preparing the first body and the second body; Forming a first body of a metal material having a through-hole is formed flat plate; And openings are formed to form a second body of metal material. Forming a lead in the first body; forming a seed layer on a surface of the first body including the through hole; Forming a lead on the seed layer; Forming a reflective layer on the lead; may include.

The present invention can provide a metal substrate and a method for manufacturing the same, which can release heat generated in the high power semiconductor device to the outside more quickly during operation of the high power semiconductor package using the metal as the body of the substrate.

In addition, the present invention provides a metal substrate and a method of manufacturing the same that can quickly discharge the heat generated in the high-power semiconductor device to the outside, thereby increasing the reliability and life of the high-power semiconductor device even when using a high-power semiconductor device that generates high heat can do.

In addition, the present invention forms a lead on the surface of the metal body by using a semiconductor process can be provided with a metal substrate that can be miniaturized, easy to manufacture, low manufacturing cost and a manufacturing method thereof.

In addition, the present invention is to form a reflector on the upper portion of the substrate and to mount the light emitting chip in the reflector, it is possible to reflect the light emitted from the light emitting chip to the upper, thereby providing a metal substrate with increased light efficiency and its manufacturing method. Can be.

In addition, the present invention can provide a metal substrate and a method of manufacturing the same by forming a metal reflector on the substrate to prevent a decrease in luminance due to deterioration (discoloration) of the reflector due to the operation of the LED package.

In addition, the present invention provides a metal substrate and a method of manufacturing the same by forming a metal reflector on the substrate to prevent the problem of the brightness deterioration due to defects in the bonding strength of the molding and the reflector and the change of the reflector due to the high temperature during the soldering process. can do.

In addition, the present invention can provide a metal substrate and a method for manufacturing the same, which can be miniaturized, easy to manufacture, and low in manufacturing cost since the lead is formed on the surface of the substrate by using a semiconductor process even if the reflective portion is formed on the metal substrate.

In addition, the present invention can provide a metal substrate and a method for manufacturing the same, which can facilitate the formation of the reflector by dividing the body into a first body and a second body.

In addition, the present invention can separate the body into the first body and the second body to form a lead on the flat first body, it is possible to provide a metal substrate and a method of manufacturing the same that can easily form the lead in a semiconductor process. have.

1A and 1B are schematic perspective views of a high power semiconductor package according to a first embodiment of the present invention.

FIG. 2 is a schematic cross sectional view taken on line A-A in FIG. 1A; FIG.

3 to 8 are cross-sectional views illustrating a method of manufacturing a high power semiconductor package according to a first embodiment of the present invention.

9A, 9B and 9C are schematic perspective views of a high power semiconductor package according to a second embodiment of the present invention.

10A is a schematic cross sectional view taken on the line B-B in FIG. 9A;

10B is a schematic cross-sectional view of a high power semiconductor package according to a modification of the second embodiment of the present invention.

11 to 13 are cross-sectional views illustrating a manufacturing process of a high power semiconductor package according to a second embodiment of the present invention.

14 is a schematic perspective view of a high power semiconductor package according to a third embodiment of the present invention.

FIG. 15 is a schematic cross sectional view taken on the line C-C in FIG. 14;

16 to 20 are cross-sectional views illustrating a manufacturing process of a high power semiconductor package according to a third embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: substrate 102: body

104: insulating film 106: lead

108: through hole 109: reflecting portion

200: light emitting chip 300: wiring

400: molding

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. In addition, in the detailed description of the present invention, when a part such as a layer, a film, a region, or a plate is expressed as being on or above another part, each part is not only when the part is directly on or directly above the other part, This includes the case where there is another part between other parts. Like reference numerals in the drawings refer to like elements.

1A and 1B are schematic perspective views of a high power semiconductor package according to a first embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view taken on line A-A of FIG. 1A.

As shown in FIGS. 1A and 2, the high power semiconductor package according to the first embodiment of the present invention includes a substrate 100 having a through hole 108 and a lead 106 formed thereon and mounted on the lead 106. A semiconductor chip 210 and a wiring 300 connecting the semiconductor chip 210 and the lead 106 are included.

The substrate 100 is for supporting the semiconductor chip 210 and the lead 106, and includes a body 102 having a through hole 108, an insulating film 104, and a lead 106.

Body 102 may comprise a thermally conductive material, such as at least one metal (including alloy) of aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti) Can be. In addition, the body 102 is preferably a plate shape in the form of a conventional substrate (100). Of course, in the present exemplary embodiment, the body 102 having a rectangular plate shape having a predetermined thickness is illustrated, but is not limited thereto, and the shape of the body 102 may vary according to the use of the substrate 100. That is, the body 102 may have a disc shape, an elliptic plate shape, and a polygonal plate shape having a predetermined thickness according to the use of the high power semiconductor package. The body 102 has a through hole 108 penetrated in the thickness direction of the body 102 on one side and the other side of the body 102 to form the lead 106 and electrically connected to the upper and lower surfaces of one side and the other side ) Is formed.

The through hole 108 is for electrically connecting the lead 106 formed on the upper surface and the lower surface of the body 102, and the first through hole 108a and the body 102 formed on one side of the body 102. It may include a second through hole (108b) formed on the other side of the. Such, the through hole 108 is preferably formed in the thickness direction of the body 102, it is effective to be perpendicular to the longitudinal direction of the body 102. Of course, the through hole 108 may not be perpendicular to the longitudinal direction of the body 102. That is, the through hole 108 is formed in the thickness direction of the body 102, but may not be parallel to the thickness direction of the body 102. In addition, in the present exemplary embodiment, each of the first through hole 108a and the second through hole 108b includes three holes. However, the present invention is not limited thereto, and the first through hole 108a and the second through hole 108b may each include at least one hole. In addition, in the present exemplary embodiment, the through hole 108 having a circular cross section perpendicular to the longitudinal direction of the through hole 108 is illustrated, but is not limited thereto. The cross section perpendicular to the longitudinal direction of the through hole 108 may be elliptical. Alternatively, the through hole 108 may be formed as a polygon.

The insulating film 104 is to insulate the leads 106 formed in the body 102 from each other, and is formed on the surface of the body 102. That is, the insulating film 104 may be formed at least in the region where the lead is formed, or may be formed on the entire surface of the body 102. In addition, the insulating film 104 is also formed on the inner circumference of the through hole 108 for forming the lead 106. The insulating layer 104 may include a polymer material or an oxide including alumina (Al ₂ O ₃ ) and the like, and a ceramic material including aluminum nitride (AlN) and a nitride. In this case, the ceramic material may be formed by high temperature oxidation, electrochemical oxidation including anodizing, CVD, PECVD, sol-gel method, and the like, and the polymer material may be formed in a film form and attached to the surface of the body 102. Can be. Of course, for example, in order to form the insulating film 104 such as alumina and aluminum nitride by high temperature oxidation or electrochemical oxidation, it is preferable to use aluminum as the body 102. In addition, the high power semiconductor package according to the present invention is characterized in that the thickness of the insulating film is thinner than the thickness of the body.

The lead 106 is an electrode for applying externally applied power to the semiconductor chip 210. The lead 106 is formed on one side of the body 102 and the second lead formed on the other side of the body 102. 106b).

The first lead 106a is formed on the first through hole 108a formed on one side of the body 102 and on one side upper surface and one side lower surface of the body 102, and the first lead 106a is formed on one side upper surface of the body 102. The semiconductor chip 210 may be mounted on the one lead 106a region. In addition, the region of the first lead 106a formed on one side upper surface and the lower surface of the body 102 may be formed in a plate shape, and the one side through hole 108, that is, the first through hole 108a of the body 102. The region of the first lead 106a formed in the second lead 106a may be formed in a column shape corresponding to the shape of the first through hole 108a. The first lead 106a may be formed of a material having excellent conductivity, for example, copper (Cu), and the separate substrate 100 on which the high power semiconductor package is mounted on the heat generated from the semiconductor chip 210. ) Can serve as a

The second lead 106b is formed on the second through hole 108b formed on the other side of the body 102 and on the other upper surface and the other lower surface of the body 102 and is formed on the other upper surface of the body 102. The wiring 300 connected to the semiconductor chip 210 may be bonded to the region of the second lead 106b. At this time, the second lead 106b is also formed in the plate shape of the second lead 106b formed on the other upper surface and the lower surface of the body 102, the second through hole 108 of the body 102, that is, the second The region of the second lead 106b formed in the through hole 108b corresponds to the shape of the second through hole 108b and may be formed in a column shape or a hollow tube shape filled therein. The first lead 106a and the second lead 106b are preferably spaced apart from one side and the other side of the body 102 so as to be electrically insulated from each other.

On the other hand, in the above description has been described with an example that two leads are formed, the present invention is not limited thereto. As shown in FIG. 1B, three first leads 106a and three second leads 106b may be formed to mount three semiconductor chips and control the semiconductor chips. Of course, this is also only one embodiment, and in the high power semiconductor package according to the present invention, at least one first lead 106a and at least one second lead 106b may be formed according to the number of semiconductor chips. The number of leads 106a and second leads 106b may be the same as or different from each other.

The semiconductor chip 210 may be mounted on the first lead 106a. Of course, it may be mounted on a region other than the first lead 106a, for example, the second lead 106b. The semiconductor chip 210 may include, for example, a high power semiconductor chip, that is, a semiconductor chip in which high heat is generated according to high power consumption. Of course, the present invention is not limited thereto, and may include all types of semiconductor chips in which heat is generated according to an operation. In this case, the semiconductor chip 210 may be electrically connected to the lead 106 by the wiring 300, and insulation of the semiconductor chip 210 and the lead 106 directly contacting the semiconductor chip 210 may be required. In this case, a separate insulating layer may be formed between the semiconductor chip 210 and the lead 106. In addition, a separate molding (not shown) may be further formed to protect the semiconductor chip 210 and the wiring 300.

As described above, the high power semiconductor package according to the present exemplary embodiment uses metal as the body 102 of the substrate 100 so that heat generated by the semiconductor chip 210 may be generated more quickly when the high power semiconductor package is operated only by the substrate 100. It can be released to the outside. In addition, the high power semiconductor package according to the present embodiment quickly discharges the heat generated by the semiconductor chip 210 to the outside, so that even if the high power semiconductor chip 210 generates high heat, the reliability and lifespan of the high power semiconductor package are used. Can be increased.

Next, a method of manufacturing a high power semiconductor package according to a first embodiment of the present invention will be described with reference to the accompanying drawings.

3 to 8 are cross-sectional views illustrating a method of manufacturing a high power semiconductor package according to a first embodiment of the present invention.

The high power semiconductor package according to the first embodiment of the present invention comprises the steps of preparing a body containing a metal (S1), forming a through hole 108 in the body (S2), and forming an insulating film on the surface of the body And a step (S4) of forming a lead in the body, and a step (S5) of mounting and electrically connecting a semiconductor chip on the lead.

Preparing a body including a metal (S1) is shown in Figure 3, aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti) or alloys thereof The body 102 is manufactured using the containing metal. At this time, the present embodiment illustrates a rectangular plate-shaped body 102 having a predetermined thickness.

Forming the through hole 108 in the body (S2) is shown in Figure 4, the first through hole 108a and the second in the thickness direction of the body 102 on one side and the other side of the body 102 Each through hole 108b is formed. In this case, the through hole 108 may be formed by mechanical processing such as cutting or laser processing, etching or die casting. This embodiment illustrates that the first through hole 108a and the second through hole 108b each include three holes.

Forming an insulating film on the surface of the body (S3) to form an insulating film 104 on the entire surface of the body 102 including the through hole 108 using a ceramic or polymer, as shown in FIG. . The insulating film 104 using ceramics may be formed of alumina or aluminum nitride by electrochemical oxidation including high temperature oxidation, anodizing, CVD, PECVD, sol-gel method, or the like. In this case, when using a ceramic, a thin polymer may be formed on the ceramic insulating film 104 for the convenience of the following process. The insulating film 104 using the polymer may be formed by coating a polymer material on the surface of the body 102 and then baking it.

Forming a lead in the body (S4), as shown in Figure 6, forming a metal layer, that is, a seed layer (S) for forming the lead 106 on the surface of the insulating film 104, Forming a photoresist P on a portion of the surface of the seed layer S, and forming a lead 106 on the seed layer S. Referring to FIG.

The step of forming the seed layer S on the surface of the insulating film 104 may include titanium (Ti) or chromium (Cr) or tungsten (W) or a metal layer on the insulating film 104 to enhance bonding strength with the lead 106. An alloy layer including any one of them is applied thinly to form a first seed layer. In this case, the first seed layer may be formed to a thickness of, for example, about 50 mW to 3000 mW using a method such as sputtering, evaporation, or CVD.

Thereafter, a second seed layer is formed on the first seed layer for the plating process. The second seed layer may use copper (Cu), and may be formed to a predetermined thickness, for example, a thickness of about 50 kPa to about 3000 kPa by a method such as sputtering, evaporation, or CVD.

After forming the seed layer S as described above, a pattern is formed on the seed layer S in the shape of the first lead 106 and the second lead 106b by using a photoresist. In this case, the photoresist P is formed on the surface of the seed layer S except for the region where the lead 106 is to be formed, and the arrangement of the photoresist P may vary depending on the shape of the lead 106. Accordingly, the lead is not formed in the region where the photoresist is formed on the seed layer S, and the lead is formed on the region where the photoresist is not formed.

The forming of the lead on the seed layer may include forming first and second leads 106a and 106b in the form of thin films on the surface of the seed layer S of the body 102 by electroplating, as shown in FIG. 7. do. To this end, a copper (Cu) layer is formed to a predetermined thickness, for example, about 5 to 20 μm on the seed layer S through electroplating. In addition, a barrier layer is formed on the copper layer to prevent penetration of solder during a soldering process. In this case, the protective film may be, for example, nickel (Ni), for example, may be formed to a thickness of about 0.5 to 2㎛. Thereafter, the seed layer S remaining under the photoresist PR and the photoresist PR is removed. On the other hand, when the substrate 100 according to the present embodiment is used for a light emitting device, it is preferable to form a material such as silver (Ag) having a high light reflectivity on the protective film. In addition, when silver (Ag) is formed, a nickel (Ni) layer is formed on the lead-in copper (Cu) layer by electroplating, and a silver (Ag) layer, which is a reflective layer, or a lead-in copper (Cu) layer is formed. The silver (Ag) layer which is a reflective layer can be formed on it.

In the present embodiment, a photoresist is formed on the seed layer S, and a lead and a reflective layer are formed, but embodiments are not limited thereto. That is, the present invention may form a metal layer for forming a lead on the seed layer S, form a photoresist on the metal layer, and then etch the metal layer to form a lead. Of course, a reflective layer may be formed on the lead. Of course, the present invention may form a lead by electroless plating on the remaining seed layer after forming a photoresist on the seed layer (S) and etching the seed layer (S).

In the step S5 of mounting and electrically connecting the semiconductor chip 210 on the lead, the semiconductor chip 210 is mounted on the first lead 106a as shown in FIG. 8. In this case, the semiconductor chip 210 may be mounted on the first lead 106a positioned on the upper center surface of the body 102. In addition, the semiconductor chip 210 and the second lead 106b are electrically connected to each other using the wiring 300. In this case, the wiring 300 may be formed by, for example, a process such as wire bonding.

As described above, since the lead 106 is formed on the surface of the metal body 102 by using a semiconductor process, the LED package may be miniaturized, easy to manufacture, and low in manufacturing cost.

Next, a high power semiconductor package according to a second embodiment of the present invention having a reflector formed on a substrate will be described with reference to the accompanying drawings. Descriptions overlapping with the description of the high power semiconductor package according to the first embodiment of the present invention described above will be omitted or briefly described.

9A, 9B, and 9C are schematic perspective views of a high power semiconductor package according to a second embodiment of the present invention, FIG. 10A is a schematic cross-sectional view taken at the line BB of FIG. 9A, and FIG. 10B is a second embodiment of the present invention. A schematic cross-sectional view of a high power semiconductor package according to a modification.

As shown in FIGS. 9A and 10A, the high power semiconductor package according to the second embodiment of the present invention includes a substrate 100 having a through hole 108, a lead 106, and a reflector 109, and a lead ( The light emitting chip 200 includes a light emitting chip 200 mounted on the 106, a wiring 300 connecting the light emitting chip 200 to a circuit, and a molding 400 encapsulating the light emitting chip 200 and the wiring 300. In this case, the present embodiment will be described with reference to FIG. 9A for convenience of description, but the present invention is spaced apart only a distance where the first electrode 106a and the second electrode 106b can be electrically insulated as shown in FIG. 9B. A reflective layer, for example, silver (Ag), is plated on the entire surface on the first electrode 106a and the second electrode 106b. That is, the lead can serve as both a power supply and a light reflection surface.

The substrate 100 is used to support the light emitting chip 200 and the lead 106. The substrate 100 includes a body 102, an insulating layer 104, and a lead 106 formed with the through hole 108 and the reflector 109. do.

The body 102 is made of a thermally conductive material, for example, at least one of aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), and titanium (Ti), as in the above-described embodiment. It may include a metal (including alloy) containing. In addition, the present embodiment exemplifies a rectangular plate-shaped body 102 having a predetermined thickness in the form of a conventional substrate 100. Of course, the shape of the body 102 may be in the shape of a disk, an elliptic plate or a polygonal plate having a predetermined thickness according to the use of the substrate 100 as mentioned in the above-described embodiment. In the body 102 according to the present embodiment, the first through hole 108a and the second through hole 108b are formed at one side and the other side of the body 102, respectively, and a reflecting unit is formed at the center of the body 102. 109 is formed.

The reflector 109 reflects light emitted from the light emitting chip 200 and may be formed in a recessed shape on the upper portion of the body 102. That is, the reflector 109 may include a sidewall which is entirely recessed in the thickness direction at the upper surface of the body 102 and extends radially upward from the bottom surface and the edge of the bottom surface. At this time, the reflector 109 is effective to have a circular cross section perpendicular to the depth direction in order to evenly reflect the light emitted from all directions from the light emitting chip 200 to the top, but if necessary, any shape such as an ellipse or a polygon may be It is possible.

In addition, it is effective to form a material having a high reflectance, for example, silver (Ag), on the surface of the reflector 109 so that the light emitted from the light emitting chip 200 can be emitted to the outside as much as possible. .

A partial region of the first lead 106a and the second lead 106b is formed in a portion of the surface of the reflector 109, that is, a portion of the bottom surface and the sidewall, and the reflector of the region of the first lead 106a. The light emitting chip 200 may be mounted on the region of the first lead 106a formed at 109. In addition, the light emitting chip 200 may be electrically connected to a region of the second lead 106b formed in the reflector 109 of the second lead 106b through the wiring 300. Of course, the region of the first lead 106a and the region of the second lead 106b formed in the reflector 109 may be formed to be spaced apart from the reflector 109. In addition, in the present exemplary embodiment, the first lead 106a and the second lead 106b formed on the reflector 109 may be bent to correspond to the shape of the reflector 109 due to the formation of the reflector 109. Is formed.

The light emitting chip 200 uses a phenomenon of emitting light by recombination of minority carriers (electrons or holes) as a compound semiconductor stacked structure having a p-n junction structure as a light source of the light emitting diode package according to the present embodiment. The light emitting chip 200 may include first and second semiconductor layers (not shown) and active layers (not shown) formed between the first and second semiconductor layers. In this embodiment, the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer. In addition, a P-type electrode (not shown) is formed on an upper surface of the light emitting chip 200, that is, one surface of the P-type semiconductor layer, and an N-type electrode ( Not shown) is formed. In this case, the N-type electrode may be in contact with the first lead 106a, and the P-type electrode may be electrically connected to the second lead 106b by the wiring 300. However, the present invention is not limited thereto, and the light emitting chip 200 according to the present invention may use a horizontal light emitting chip 200 in addition to the vertical light emitting chip 200 as described above. The light emitting chip 200 may be used. In the present exemplary embodiment, the light emitting chip 200 is mounted on the first lead 106a as an example. However, the present invention is not limited thereto, and the light emitting chip 200 is disposed on the second lead 106b. It can also be mounted. In addition, as shown in FIG. 9C, when the plurality of light emitting chips are mounted, a plurality of first leads 106a and second leads 106b may be formed. In this embodiment, three light emitting chips, for example, red (R), green (G), and blue (B) light emitting chips are mounted, and red (R), green (G), and blue (B) light emitting chips are individually mounted. Three first leads 106a and second leads 106b are formed to control each other. Of course, when the insulating film 104 is a polymer material, heat transfer characteristics are not good, and in order to improve this, as shown in FIG. The light emitting chip 200 may be mounted on the bottom surface of the reflector from which the insulating film 104 is removed. In this case, the insulating film 104 between the body 102 and the contact portion 107 is removed in a necessary form so that the heat transferred to the body 102 can be discharged to the outside without passing through the polymer film. The heat may be transferred directly to a separate substrate on which the high power semiconductor package is mounted through the body and the contact portion 107. In this case, the polymer used is not only able to withstand high temperatures such as packaging and soldering, but also serves as a photoresist. In this case, necessary parts can be removed through exposure and etching (dry or wet) without using a separate photoresist. Of course, this method is applied to all the cases where the polymer insulating film is used in the first, second and third embodiments of the present invention.

The wiring 300 is for electrically connecting the light emitting chip 200 and the second lead 106b. The wiring 300 is formed of gold (Au) or aluminum (Al) through a process such as a wire bonding process. Can be. Meanwhile, when the light emitting chip 200 is horizontal, two wires 300 may be used to electrically connect the first and second leads 106a and 106b and the horizontal light emitting chip 200.

The molding 400 encapsulates the light emitting chip 200 and fixes the wiring 300 connected to the light emitting chip 200. The molding 400 transmits light emitted from the light emitting chip 200 to the outside. Since it should be, it is usually formed of a transparent resin such as epoxy resin or silicone resin. In addition, the molding 400 may be formed in a lens shape, for example, a convex lens shape to change the path of the light emitted from the light emitting chip 200.

On the other hand, the LED package according to the present embodiment may further include a diffusion agent (not shown) to uniformly emit light by diffusing the light emitted from the light emitting chip 200 by scattering in the molding 400. In this case, the diffusion agent may include barium titanate, titanium oxide, aluminum oxide, silicon oxide, and the like. In addition, the molding 400 may further include a phosphor (not shown). The phosphor absorbs a portion of the light emitted from the light emitting chip 200 and emits light having a wavelength different from that of the absorbed light. The phosphor is composed of active ions in which impurities are mixed at appropriate positions of the host crystal. The role of the active ions determines the emission color by determining the energy level involved in the emission process, and the emission color is determined by the energy gap between the ground state and the excited state of the active ion in the crystal structure.

As described above, the light emitting diode package according to the present embodiment forms a reflecting unit 109 on the upper portion of the body 102 and mounts the light emitting chip 200 on the reflecting unit 109 so that the light emitting chip 200 can be used. The emitted light may be reflected upwards, thereby providing a light emitting diode package having increased light efficiency. In addition, in the LED package according to the present embodiment, since the reflector 109 is made of metal, it is possible to prevent a decrease in luminance due to deterioration (discoloration) of the reflector 109 due to the operation of the LED package. In addition, the LED package according to the present exemplary embodiment may prevent a problem of deterioration of luminance due to defects in the bonding strength between the molding 400 and the reflector 109 and discoloration of the reflector 109 due to high temperature during the soldering process. Can be.

Next, a manufacturing process of a high power semiconductor package according to a second embodiment of the present invention will be described with reference to the accompanying drawings. In the following description, the overlapping description of the manufacturing process of the high power semiconductor package according to the first embodiment of the present invention described above will be omitted or briefly described.

11 to 13 are cross-sectional views illustrating a manufacturing process of a high power semiconductor package according to a second embodiment of the present invention.

The high power semiconductor package according to the second embodiment of the present invention comprises the steps of preparing a body containing a metal (S1), forming a through hole and a reflecting portion in the body (S2), and forming an insulating film on the surface of the body Step S3, forming a lead in the body (S4), mounting a light emitting chip on the lead and electrically connecting the step (S5), and forming a molding (S6).

Preparing a body including a metal (S1) and forming a through hole and a reflecting portion in the body (S2), as shown in Figure 11, first, aluminum (Al), copper (Cu), nickel (Ni) ), A body 102 is manufactured using a metal including magnesium (Mg), titanium (Ti), or an alloy thereof. Thereafter, the first through hole 108a and the second through hole 108b are respectively formed on one side and the other side of the manufactured body 102 by a method such as mechanical processing, etching, or die casting in the thickness direction of the body 102. Form. In this case, each of the first through hole 108a and the second through hole 108b may include at least one hole. Next, the reflective portion 109 is formed on the upper surface of the body 102. The reflector 109 may be formed in a recessed shape on the upper surface of the body 102 in the same manner as the through hole 108. Of course, in the present exemplary embodiment, the through hole 108 is formed and then the reflective part 109 is formed. However, the present invention is not limited thereto, and the through hole 108 may be formed after the reflective part 109 is formed. The reflector 109 and the through hole 108 may be formed at the same time.

Forming an insulating film on the surface of the body (S3) and forming a lead on the body (S4) is a method of manufacturing a light emitting diode package according to the first embodiment of the present invention as shown in FIG. Similarly, an insulating film 104 is formed on the entire surface of the body 102 including the through hole 108 using a ceramic or a polymer, and a seed layer and a lead 106 are formed on the insulating film 104. At this time, the step of forming a lead in the body (S4) is a step of forming a seed layer (S) for forming a metal layer, that is, the lead 106 on the surface of the insulating film 104, Forming a photoresist according to the shape of the lead 106 on the surface, and forming the lead 106 on the seed layer (S).

First, this is an alloy layer including titanium (Ti) or chromium (Cr) or tungsten (W) or any one of them, that is, titanium (Ti) alloy or chromium (Cr) alloy or tungsten on the surface of the insulating film 104. (W) The alloy layer is applied thinly using a method such as sputtering, evaporation or CVD to form a first seed layer. In addition, a second seed layer is formed on the first seed layer by using copper (Cu) in the same manner as the method for forming the first seed layer.

Thereafter, a photoresist according to the shape of the lead 106 is formed on the surface of the seed layer S including the first seed layer and the second seed layer, and the shapes of the first lead 106a and the second lead 106b are formed. Form a pattern.

 Next, a thin film copper (Cu) layer is electroplated on the surface of the seed layer S of the body 102 to form first and second leads 106a and 106b having a shape corresponding to the pattern. Of course, a barrier layer may be formed on the copper (Cu) layer in the same manner as the manufacturing method of the LED package according to the first embodiment of the present invention. Metal such as may be plated. Thereafter, the seed layer S remaining under the photoresist PR and the photoresist PR is removed.

Mounting and electrically connecting the light emitting chip on the lead (S5) and forming the molding (S6), as shown in FIG. 13, the light emitting chip 200 is mounted on the first lead 106a. After connecting the light emitting chip 200 and the second lead 106b to the wiring 300, a molding 400 encapsulating the light emitting chip 200 and the wiring 300 is formed. In this case, it is preferable that the light emitting chip 200 is mounted on the first lead 106a positioned on the upper center surface of the body 102. In addition, the light emitting chip 200 and the second lead 106b are electrically connected to each other using the wiring 300. In this case, the wiring 300 may be formed by, for example, a process such as wire bonding. Although not shown, when the vertical light emitting chip 200 is used, an upper electrode, for example, a P-type electrode and the second lead 106b of the light emitting chip 200 may be electrically connected. In addition, the molding can be formed using a transparent resin. Such molding 400 may be formed using, for example, a transfer molding method. Of course, the method of forming the molding 400 is not limited to the transfer molding method, and various methods for forming the molding 400 may be used, for example, an injection molding method.

As described above, the LED package according to the present exemplary embodiment can be miniaturized because the lead 106 is formed on the surface of the metal body 102 by using a semiconductor process even when the reflective part 109 is formed on the metal body 102. It is possible to provide a light emitting diode package that is easy to manufacture and low in manufacturing cost.

Next, a high power semiconductor package according to a third embodiment of the present invention will be described with reference to the accompanying drawings. Duplicated descriptions of the first and second embodiments of the present invention described above will be omitted or briefly described.

14 is a schematic perspective view of a high power semiconductor package according to a third embodiment of the present invention, and FIG. 15 is a schematic cross-sectional view taken on line C-C in FIG.

In the high power semiconductor package according to the third embodiment of the present invention, as shown in FIGS. 14 and 15, the lead 106 and the reflector 109 are formed, and the first body 102a and the second body 102b are formed. A substrate 100 including the substrate 100, a light emitting chip 200 mounted on the lead 106, a wiring 300 connecting the circuit with the light emitting chip 200, a light emitting chip 200, and a wiring 300. It includes a molding 400 for sealing.

The substrate 100 is to support the light emitting chip 200 and the lead 106, and includes a body 102 on which the reflector 109 is formed, an insulating film 104, and a lead 106.

The body 102 is formed of at least one thermally conductive material, for example, aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti), or the like, as described above. Metal (including alloys). In addition, the present embodiment exemplifies a rectangular plate-shaped body 102 having a predetermined thickness in the form of a conventional substrate 100. At this time, the body 102 according to the present embodiment includes a first body 102a and a second body 102b that is combined with the first body 102a to form the reflector 109.

The first body 102a has a plate shape having a predetermined thickness, and in this embodiment, since the body 102 having a rectangular plate shape is illustrated, the first body 102a also illustrates a square plate shape having a predetermined thickness. In this case, the first through hole 108a and the second through hole 108b are formed at one side and the other side of the first body 102a having a rectangular plate shape, and an insulating film 104 may be formed on the entire surface thereof.

The second body 102b is attached on the first body 102a to form the reflecting portion 109. The second body 102b also illustrates a square plate shape having a predetermined thickness like the above-described first body 102a, and an opening for forming the reflector 109 is formed at the center of the second body 102b of the square plate shape. Is formed. This, the second body 102b is coupled on the first body 102a, whereby the side wall of the reflecting portion 109 is formed by the opening of the second body 102b and the bottom surface of the reflecting portion 109 Is formed by the first body 102a coupled with the opening region of the second body 102b. In this case, the second body 102b may also have an insulating film 104 formed on its entire surface, and silver (Ag) may be coated on the insulating film 104.

The lead 106 is formed between the first body 102a and the second body 102b and the first body through the first and second through holes 108a and 108b formed at one side and the other side of the first body 102a. It may be formed in a portion of the lower surface of 102a). Of course, the present invention is not limited thereto, and the lead 106 may be formed between the first body 102a and the second body 102b and on the side of the first body 102a. In this case, the surface of the first body 102a and the second body 102b, for example, between the first body 102a and the second body 102b on which the lid 106 is formed and the first body 102a It is preferable that the insulating film 104 is formed in the side surface and the lower portion of the (). In this embodiment, the insulating film 104 is formed on the entire surfaces of the first body 102a and the second body 102b. Of course, the lid 106 may also be formed on the upper surface of the body 102, that is, the upper surface of the second body 102b, as in the second embodiment of the present invention described above. In addition, in the high power semiconductor package according to the present embodiment, the body is separated into a first body and a second body, and the surface between the first body and the second body on which the lead is formed is flat, so that the lead forming process is silk. It may be formed using a printing technique.

As described above, the LED package according to the present exemplary embodiment may facilitate the formation of the reflector 109 by dividing the body 102 into the first body 102a and the second body 102b. In addition, in the LED package according to the present exemplary embodiment, the lead 106 may be formed between the first body 102a and the second body 102b to facilitate the formation of the lead 106.

Next, a manufacturing process of a high power semiconductor package according to a third embodiment of the present invention will be described with reference to the accompanying drawings. Descriptions overlapping descriptions of manufacturing processes of the high power semiconductor package according to the first and second embodiments of the present invention described above will be omitted or briefly described.

16 to 20 are cross-sectional views illustrating a manufacturing process of a high power semiconductor package according to a third embodiment of the present invention.

The high power semiconductor package according to the third embodiment of the present invention comprises the steps of preparing a first body and a second body (S1), forming an insulating film on the surface of the body (S2), and forming a lead in the body (S3), forming a reflector in the body (S4), mounting (S5) and mounting a light emitting chip on the lead, and forming a molding (S6). In this case, in the high power semiconductor package according to the present exemplary embodiment, the seed layer S may be omitted, and the lead 106 may be formed by screen printing.

Preparing the first body and the second body (S1) is shown in Figure 16, aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti) or their The first body 102a is manufactured using a metal including an alloy. At this time, the first body 102a illustrates a square plate-shaped metal having a predetermined thickness. In addition, the second body 102b is manufactured using a metal including aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti), or an alloy thereof. At this time, the first through hole 108a and the second through hole 108b are formed at one side and the other side of the first body 102a, respectively. In addition, an opening for forming the reflective portion 109 is formed at the center of the second body 102b, and the through hole 108 and the opening are formed in the thickness direction of the body 102 by mechanical processing, etching, die casting, or the like. It can be formed using the method.

Forming an insulating film on the surface of the body (S2) is shown in Figure 17, by using a ceramic or polymer or ceramic film / polymer double film on the entire surface of the first body (102a) and the second body (102b) The insulating film 104 is formed. In this case, the insulating film 104 is formed on the entire surface of the first body 102a and the second body 102b, but the insulating film 104 is formed only on the first body 102a and the second body 102b is formed. The insulating film 104 may not be formed or may be formed only in a required region. The insulating film 104 is the same as the manufacturing method of the LED package according to the first and second embodiments of the present invention described above.

As shown in FIG. 18, the step S3 of forming the lead on the body forms a metal layer of the insulating film 104 of the first body 102a, that is, a seed layer S for forming the lead 106. And forming a photoresist on the surface of the seed layer S, and forming a lead 106 on the seed layer S.

The forming of the seed layer S on the surface of the insulating film 104 of the first body 102a is the same as the method of manufacturing the LED package according to the first and second embodiments of the present invention described above. Titanium (Ti) alloy or chromium (Cr) alloy, which is an alloy containing titanium (Ti) or chromium (Cr) or tungsten (W) or any one of them to enhance the bonding force with the metal layer, that is, the lead 106 or The tungsten (W) alloy layer is applied thinly to form the first seed layer. Thereafter, a second seed layer is formed on the first seed layer using copper (Cu) for the plating process.

Next, a photoresist is formed according to the shape of the lead 106 to be formed on the seed layer S. FIG. In this embodiment, the region other than the photoresist is formed, that is, the exposed seed layer S becomes the inner circumference of the through hole 108 and a portion of the upper surface and the lower surface of the first body 102a. Of course, when the through hole 108 is not formed in the first body 102a, one side and the other side of the first body 102a, that is, the lower side and the side and the upper side of the body 102, the other side of the body 102 The seed layer S may be exposed to form the first lead 106a and the second lead 106b in the lower portion, the side surface, and the upper portion of the region.

Forming the lead 106 on the seed layer (S) to form a copper (Cu) layer of a predetermined thickness, for example, about 5 to 20㎛ thickness through electroplating on the exposed seed layer (S) do. In this case, a barrier layer may be formed of a metal such as nickel (Ni) to prevent penetration of the solder during the soldering process on the copper layer. At this time, the protective film may be formed, for example, to a thickness of about 0.5 to 2㎛. Of course, a metal having a high reflectance such as silver (Ag) may be plated on the protective film to improve light reflectance. Thereafter, the seed layer S remaining under the photoresist PR and the photoresist PR is removed.

Forming a reflector on the body (S4) includes coupling the first body 102a and the second body 102b, as shown in FIG. 19. In this case, the body 102 having the reflector 109 may be manufactured by combining the first body 102a and the second body 102b having the opening. In addition, silver (Ag) may be plated on the inclined surface of the reflector of the second body 102b.

Mounting and electrically connecting the light emitting chip on the lead (S5) and forming the molding (S6), as shown in FIG. 20, the light emitting chip 200 is mounted on the first lead 106a After forming the light emitting chip 200 and the second lead 106b as the wiring 300, a molding 400 for encapsulating the light emitting chip 200 and the wiring 300 is formed. At this time, the mounting of the light emitting chip 200 and the formation of the wiring 300 and the molding 400 are the same as the manufacturing method of the LED package according to the second embodiment of the present invention described above.

As described above, in the high power semiconductor package according to the present embodiment, the lead 102 is formed on the first flat body 102a by separating the body 102 into the first body 102a and the second body 102b. can do. In addition, the lead 106 may be easily formed on the flat first body 102a by the semiconductor process.

Although described above with reference to the drawings and embodiments, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit of the invention described in the claims below. I can understand.

For example, the illustrated embodiment illustrates a device package in which a high power semiconductor chip or a light emitting chip is mounted, but is not limited thereto. The substrate according to the present invention may be applied to various devices requiring heat dissipation. In this case, the number and shape of the leads may be changed according to the applied device, and the wiring and the molding may be omitted.

Claims (22)

A body comprising a metal, A through hole penetrating the body; An insulating film covering the surface of the body; And a lead formed on the upper and lower surfaces of the body through the through hole. The method according to claim 1, The body is a metal substrate, characterized in that the alloy containing at least one of aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), titanium (Ti). The method according to claim 1, The insulating film includes a multilayer or ceramic material or polymer material in which a polymer material is formed on a ceramic material, The ceramic material comprises an oxide or nitride, And the insulating film is thinner than the body. The method according to claim 3, The polymer material is a thin film form, The thin film polymer material is formed to be exposed to mount a semiconductor chip in a portion of the body metal substrate. The method according to claim 1, The body further comprises a reflector formed indented on the upper surface. The method according to claim 5, The lead is a metal substrate, characterized in that a partial region is formed on the surface of the reflecting portion. The method according to claim 6, The reflector further includes a reflective layer formed on the surface, The reflective layer includes a metal (Ag). The method according to claim 7, And a barrier layer formed under the reflective layer. The method according to claim 1, The body is the first body flat plate, And a second body bonded to the first body and having an opening formed therein. The method according to claim 9, The lead is formed between the first body and the second body metal substrate, characterized in that exposed to one side and the other side of the body. Preparing a body comprising a metal; Forming a through hole in the body; Forming an insulating film on the surface of the body; Forming a lead in the body; Method of manufacturing a metal substrate comprising a. The method according to claim 11, Forming a through hole in the body; And forming a recessed reflection portion in the body. The method according to claim 11, Forming an insulating film on the surface of the body; Forming a ceramic material on the surface of the body by high temperature oxidation, anodizing, CVD, PECVD or sol-gel methods; or, And baking the coated polymer material on the surface of the body and then baking the same. The method according to claim 11, Forming a lead in the body; Forming a seed layer on the surface of the body; Forming a lead on the seed layer; manufacturing method of a metal substrate comprising a. The method according to claim 14, Forming a seed layer on the surface of the body; Forming a first seed layer on a surface of the insulating film; Forming a second seed layer on the first seed layer; Forming a photoresist on the surface of the second seed layer; manufacturing method of a metal substrate comprising a. The method according to claim 15, Forming a first seed layer on a surface of the insulating film; Titanium (Ti) layer or chromium (Cr) layer or tungsten (W) layer or titanium (Ti) and chromium (Cr) and tungsten (W) by sputtering, evaporation or CVD on the surface of the insulating film Forming an alloy layer comprising at least one of); manufacturing method of a metal substrate comprising a. The method according to claim 15, Forming a second seed layer on the first seed layer; Forming copper (Cu) on the surface of the first seed layer by sputtering, evaporation, or CVD. The method according to claim 15, Forming a lead on the seed layer; Electroplating on the second seed layer on which the photoresist is formed to form a metal layer; and Forming a reflective layer on the metal layer; manufacturing method of a metal substrate comprising a. The method according to claim 14, Forming a lead on the seed layer; Forming a metal layer on the seed layer by a coating method including electroplating; Forming a photoresist on the metal layer and etching the metal layer to form a lead; And forming a reflective layer on the lead by electroless plating. Preparing a first body and a second body; Forming an insulating film on surfaces of the first body and the second body; Forming a lead in the first body; Combining the first body and the second body. The method of claim 20, Preparing the first body and the second body; Forming a first body of a metallic material having a flat upper surface and having a through hole formed therein; Forming an opening and forming a second body of the metal material; manufacturing method of a metal substrate comprising a. The method of claim 20, Forming a lead in the first body; Forming a seed layer on a surface of the first body including the through hole; Forming a lead on the seed layer; Forming a reflective layer on the lead; Method of manufacturing a metal substrate comprising a.