KR20150028150A - Light emitting device and light emitting module including the device - Google Patents

Abstract

A light emitting device package according to the embodiment of the present invention includes a package body which includes an upper side which includes a first segment and a second segment and has electrical conductivity, a light emitting device chip which is mounted on the first segment of the upper side of the package body and emits light of a wavelength band between 100nm and 400nm, and an electrical insulation part which includes a molding member which is arranged on the first segment of the upper side of the package body to surround the light emitting device chip, is arranged on the package body and includes a void. The electrical insulation part includes a first electrical insulation layer which is arranged on the second segment of the upper side of the package body and a second electrical insulation layer which is arranged on the lateral side of the package body.

Description

[0001] The present invention relates to a light emitting device package and a light emitting module including the light emitting device package.

An embodiment relates to a light emitting device package and a light emitting module including the same.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are attracting attention as a core material for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

A conventional light emitting device package is composed of a package body on which light emitting diodes and light emitting diodes are mounted. If the light emitting diode emits blue light, the material of the package body may be ceramic. However, when the light emitting diode emits light in the ultraviolet wavelength band, the package body can be realized as a metal in consideration of heat radiation characteristics. There is a problem that the metal package body can be electrically short-circuited due to dust or the like because it has electrical conductivity.

Embodiments provide a light emitting device package and a light emitting module including the same that can solve the possibility of electrical short circuiting of a package body and improve heat dissipation characteristics.

A light emitting device of an embodiment includes: a package body having an upper surface including a first segment and a second segment and having electrical conductivity; A light emitting device chip mounted on the first segment of the upper surface of the package body and emitting light in a wavelength band of 100 nm to 400 nm; A molding member arranged to surround the light emitting device chip on the first segment of the upper surface of the package body; And an electrically insulating portion disposed on the package body and having voids, the electrically insulating portion comprising: a first electrically insulating layer disposed over the second segment of the top surface of the package body; And a second electrically insulating layer disposed on a side surface of the package body.

The package body may include a material having reflectivity.

The first electrically insulating layer and the second electrically insulating layer may be integrated or disposed in contact with each other.

At least one of the first and second electrically insulating layers may have a patterned surface and the thickness of the first or second electrically insulating layer may be 1000 A to 5000 A.

The first or second electrically insulating layer may include a transparent material.

The first or second electrically insulating layer may comprise an oxide.

The first or second electrically insulating layer may include at least one of SiO ₂ , TiO ₂ , SnO ₂ , ZnO, Si _x O _y , Si _x N _y , SiO _x N _y , ITO, Al ₂ O _3, have.

The light emitting module according to another embodiment includes at least one light emitting device package; And a module substrate on which the at least one light emitting device package is mounted, and the at least one light emitting device package may be the light emitting device package described above.

The light emitting device package according to the embodiment and the light emitting module including the same can be applied to the package body having electrical conductivity with an electrically insulating portion to prevent a possibility that the light emitting device package is electrically short-circuited by dust or the like, The surface area of the package body is increased to improve the heat radiation characteristic and the voids are present in the electrically insulating layer, so that the heat radiation characteristics can be further improved.

1 is a perspective view of a light emitting device package according to an embodiment.
2 is a plan view of the light emitting device package illustrated in FIG.
3 is a cross-sectional view taken along the line A-A 'in Fig.
FIG. 4 shows a cross-sectional view of an embodiment of the 'B' portion shown in FIG. 3 in an enlarged view.
5 is a cross-sectional view of another embodiment of the 'B' portion shown in FIG. 3 in an enlarged scale.
FIG. 6 shows a cross-sectional view of another embodiment of the 'B' portion shown in FIG. 3 in an enlarged view.
FIGS. 7A to 7E are cross-sectional views illustrating the embodiment of FIG. 3, which is an enlarged view of a portion 'C'.
8 is a schematic cross-sectional view of a light emitting module according to an embodiment.
9 is a perspective view of the air sterilizing apparatus according to the embodiment.
10 shows a headlamp including the light emitting device package according to the embodiment.
11 shows a lighting device including a light emitting device chip or a light emitting device package according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under includes both elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

FIG. 1 is a perspective view of a light emitting device package according to an embodiment, FIG. 2 is a plan view of the light emitting device package illustrated in FIG. 1, and FIG. 3 is a sectional view taken along line A-A 'of FIG.

1 to 3, a light emitting device package according to an embodiment includes a module substrate 110, an insulating portion 112, a package body 120, a light emitting device chip 130, first and second wires 142 144, a molding member 150, and an electrical insulation 160. Although the module substrate 110 is not shown in FIGS. 1 and 2, the module substrate 110 is shown in FIG. 3 for ease of understanding.

The module substrate 110 may include not only a general printed circuit board (PCB) but also a metal core PCB (MCPCB), a flexible PCB, and the like, but the embodiment is not limited thereto .

The package body 120 has top surfaces 122A, 122B, 123A, 123B, 124A, 124B, 125A, 125B and side surfaces 126A, 126B. The upper surface includes a first segment S1 and a second segment S2A, S2B. The first segment S1 of the upper surface includes portions 122A and 122B where the electrical insulating portion 160 is disposed, portions 123A and 123B that contact the cavity 129, and inclined surfaces 124A and 124B of the cavity 129. [ 124B of the cavity 129 and bottom surfaces 125A, 125B of the cavity 129, respectively.

The package body 120 may be made of a material having electrical conductivity as well as reflective properties. If the light emitting device chip 130 emits light in the ultraviolet wavelength band, the package body 120 may be made of aluminum, but the present invention is not limited thereto. Here, the ultraviolet wavelength band means a wavelength band of 100 nm to 400 nm, and may be a wavelength band of 100 nm to 280 nm, for example.

The package body 120 includes first and second body portions 120A and 120B that are electrically spaced from one another on the module substrate 110. As described above, when the first and second body portions 120A and 120B are formed of an aluminum material having electrical conductivity, the insulator 112 is disposed between the first body portion 120A and the second body portion 120B. And electrically separates them from each other.

The molding member 150 may be filled with the cavity 129 formed by the first and second body portions 120A and 120B to surround the light emitting device chip 130. [ At this time, the molding member 150 is mounted on the first segment S1 of the upper surface of the package body 120. In addition, the molding member 150 may include a phosphor to change the wavelength of light emitted from the light emitting device chip 130.

The cross-sectional view illustrated in FIG. 3 is only one example for facilitating the understanding of the embodiment, and the embodiment is not limited thereto. That is, according to another embodiment, the cavity 129 may not be formed, and the molding member 150 may be disposed on the upper surface of the flat package body 120.

The light emitting device chip 130 is mounted on the bottom surface 125B of the cavity 129 in the first segment S1 of the upper surfaces 122A, 122B, 123A, 123B, 124A, 124B, 125A, and 125B of the package body 120, And can emit light in the ultraviolet wavelength band.

In FIG. 3, the light emitting device chip 130 is illustrated as being disposed on the second body portion 120B, but the embodiment is not limited thereto. That is, the light emitting device chip 130 may be disposed on the first body part 120A instead of the second body part 120B.

The light emitting device chip 130 may have a flip bonding structure, a horizontal bonding structure, or a vertical bonding structure. In the embodiment, Method.

Hereinafter, various configurations of the light emitting device chip 130 will be described with reference to the accompanying drawings.

FIGS. 4 to 6 show cross-sectional views of embodiments (B1, B2, B3) showing the enlarged view of the portion "B" shown in FIG.

The light emitting device chip 130A having the flip-bonding type structure illustrated in FIG. 4 includes a substrate 131, a buffer layer 132, a light emitting structure 133, first and second electrodes 134A and 134B, (Or metal layer) 136A, 136B, a protective layer 137, and a submount 138. The first and second electrode pads 135A, 135B, first and second electrode pads (or metal layers)

The substrate 131 may have a light transmitting property so that the light emitted from the active layer 133B can be emitted through the substrate 131. [ For example, the substrate 131 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. In addition, the substrate 131 may have a mechanical strength enough to separate the nitride semiconductor into separate chips through a scribing process and a breaking process without causing warping of the entire nitride semiconductor.

The buffer layer 132 is disposed between the substrate 131 and the light emitting structure 133 to improve lattice matching between the substrate 131 and the light emitting structure 133. For example, the buffer layer 132 may include, but is not limited to, AlN or an undoped nitride. The buffer layer 132 may be omitted depending on the type of the substrate 131 and the type of the light emitting structure 133.

The light emitting structure 133 is disposed under the buffer layer 132 and includes a first conductivity type semiconductor layer 133A, an active layer 133B, a second conductivity type first semiconductor layer 133C, Layer 133D may be stacked in sequence.

The first conductive semiconductor layer 133A is disposed between the buffer layer 132 and the active layer 133B and may be formed of a semiconductor compound. III-V, II-VI, or the like, and may be doped with a first conductivity type dopant. For example, the first conductivity type semiconductor layer 133A has a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the first conductivity type semiconductor layer 133A is an n-type semiconductor layer, the first conductivity type dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 133A may be formed as a single layer or a multilayer, but the present invention is not limited thereto. Particularly, since the light emitting device chip 130 illustrated in FIG. 3 emits light in the ultraviolet (UV), especially deep ultraviolet (DUV) wavelength band, the first conductivity type semiconductor layer 133A has a larger wavelength band of ultraviolet And may be realized by at least one of InAlGaN and AlGaN with low absorption.

The active layer 133B is disposed between the first conductivity type semiconductor layer 133A and the second conductivity type semiconductor layers 133C and 133D and has a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) Multi Quantum Well) structure, a quantum dot structure, or a quantum wire structure. InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), and / AlGaAs are used as the active layer 133B, GaP (InGaP) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer. In particular, the active layer 133B emits light in the ultraviolet band.

The second conductivity type semiconductor layers 133C and 133D may be disposed under the active layer 133B. The second conductivity type semiconductor layers 133C and 133D may be formed of a semiconductor compound. The second conductive semiconductor layers 133C and 133D may be formed of compound semiconductors such as Group III-V and Group II-VI, and may be doped with a second conductive dopant. For example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) or AlInN, AlGaAs, GaP, GaAs, GaAsP , AlGaInP, or the like. When the second conductivity type semiconductor layers 133C and 133D are p-type semiconductor layers, the second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, and Ba. In particular, since the light emitting device chip 130 illustrated in FIG. 3 emits light in a wavelength band of ultraviolet (UV) (particularly, DUV), the second conductivity type semiconductor layer includes the second conductive type first semiconductor layer 133C And a second conductive type second semiconductor layer 133D.

If the second conductivity type semiconductor layers 133C and 133D are formed of GaN, the light of the ultraviolet wavelength band may be absorbed by GaN and the light extraction efficiency may be reduced. Therefore, the second conductive type first semiconductor layer 133C InAlGaN, and AlGaN. In addition, when the second conductive semiconductor layers 133C and 133D are formed of only InAlGaN or AlGaN, injection of holes through the second electrode 134B may not be smooth. Therefore, the second conductive type semiconductor layer 133C, The first conductive semiconductor layer 133D may be disposed between the second conductive type first semiconductor layer 133C and the second electrode 134B.

Next, the first electrode 134A is disposed under the first conductive type semiconductor layer 133A. The first electrode 134A may include, but is not limited to, for example, at least one of AlN and BN. That is, any material that can reflect or transmit the light emitted from the active layer 133B without absorbing it and that can be grown on the first conductivity type semiconductor layer 133A with good quality forms the first electrode 134A can do.

In addition, the first electrode 134A may include an ohmic contact material and may serve as an ohmic layer so that a separate ohmic layer (not shown) may not be disposed, and a separate ohmic layer may be formed on the first electrode 134A May be disposed below.

In addition, the second electrode 134B is in contact with the second conductive type second semiconductor layer 133D and may be formed of a metal. For example, the second electrode 134B may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au,

The second electrode 134B may be a transparent conductive oxide (TCO). For example, the second electrode 134B may be formed of a metal material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited thereto. The second electrode 134B may include a material that makes an ohmic contact with the second conductive type second semiconductor layer 133D.

Further, the second electrode 134B may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic. If the second electrode 134B performs an ohmic function, a separate ohmic layer (not shown) may not be formed.

4, the submount 138 may be formed of a semiconductor substrate such as AlN, BN, silicon carbide (SiC), GaN, GaAs, Si, etc., Semiconductor material. In addition, an element for preventing electrostatic discharge (ESD) in the form of a zener diode may be included in the submount 138. [

The first electrode 134A is connected to the first electrode pad 136A of the submount 138 via the first bump 135A and the second electrode 134B is connected to the submount 138B through the second bump 135B. 138 of the second electrode pad 136B. The first and second wires 142 and 144 serve to electrically connect the package body 120 and the light emitting device chip 130A. The first electrode pad 136A is electrically connected to the first body part 120A through the first wire 142 and the second electrode pad 136B is electrically connected to the second body part 120B through the second wire 144. [ And is electrically connected to the portion 120B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 134A and the first bump 135A and a second upper bump metal layer (not shown) is disposed between the first electrode pad 136A and the first bump 135A A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate a position where the first bump 135A is to be positioned. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 134B and the second bump 135B, and a second lower bump metal layer (not shown) is disposed between the second electrode pad 136B and the second bump 135B. A bump metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate the place where the second bump 135B is to be located.

If the submount 138 is embodied as a material having electrical conductivity such as Si, a protective layer may be formed between the first and second electrode pads 136A and 136B and the submount 138 as illustrated in FIG. (137) may be further disposed. Here, the protective layer 137 may be made of an insulating material.

Since the light emitting device chip 130A illustrated in FIG. 4 has a flip-bonding structure, light emitted from the active layer 133B is incident on the first conductive semiconductor layer 133A, the buffer layer 132, and the substrate 131 . Accordingly, the first conductivity type semiconductor layer 133A, the buffer layer 132, and the substrate 131 may be made of a light-transmitting material.

On the other hand, since the light emitting device chip 130B illustrated in FIG. 5 has a structure of a horizontal bonding type, the light emitted from the active layer 133B is transmitted through the first and second semiconductor layers 133C and 133D, And is emitted through the second electrode 134B. For this, the second and first semiconductor layers 133C and 133D and the second electrode 134B illustrated in FIG. 5 are made of a light-transmitting material, and the first conductive semiconductor layer 133A, The buffer layer 132 and the substrate 131 may be made of a light-transmitting or non-light-transmitting material.

Since the light emitting device chip 130B illustrated in FIG. 5 has a horizontal bonding type structure, the first and second bumps 135A and 135B illustrated in FIG. 4, the first and second electrode pads 136A and 136B, 136B, the protective layer 137, and the submount 138 are not required. Except for these differences, the light emitting device chip 130B illustrated in FIG. 5 is the same as the light emitting device chip 130A illustrated in FIG. 4, and thus the same reference numerals are used, and a detailed description thereof will be omitted.

In addition, the light emitting device chip 130C having the vertical bonding type structure illustrated in FIG. 6 includes a support substrate 139, a light emitting structure 133, and a first electrode 134C.

The support substrate 139 may comprise a conductive material or a non-conductive material. For example, the support substrate 139 may include at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs, and Si. If the supporting substrate 139 is of the conductive type, the entirety of the supporting substrate 139 can serve as a p-type electrode, so that a metal having excellent electrical conductivity can be used and heat generated during the operation of the light emitting element can be sufficiently diffused A metal having a high thermal conductivity can be used.

For example, the support substrate 139 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Au), a copper alloy (Cu Alloy), a nickel (Ni), a copper-tungsten (Cu-W), a carrier wafer (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.), and the like.

Although not shown, a reflective layer (not shown) may be further disposed between the supporting substrate 139 and the second conductive type second semiconductor layer 133D. The reflective layer may reflect the light emitted from the active layer 133B upward. For example, the reflective layer may comprise a metal layer comprising aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh) have. Aluminum, silver, and the like can effectively reflect the light generated in the active layer 133B, thereby greatly improving the light extraction efficiency of the light emitting device.

In FIG. 6, the light emitted from the active layer 133B is emitted through the first conductive type semiconductor layer 133A and the first electrode 134C. For this, the first conductivity type semiconductor layer 133A and the first electrode 134C are made of a material having translucency, and the first and second semiconductor layers 133C and 133D of the second conductivity type are made of a translucent or non- . ≪ / RTI > Since the light emitting device chip 130C illustrated in FIG. 6 has a vertical bonding structure, the first and second bumps 135A and 135B illustrated in FIG. 4, the first and second electrode pads 136A and 136B, 136B, the protective layer 137, and the submount 138 are not required. Except for these differences, the light emitting device chip 130C illustrated in FIG. 6 is the same as the light emitting device chip 130A illustrated in FIG. 4, and thus the same reference numerals are used, and a detailed description thereof will be omitted.

According to the embodiment, on the other hand, the electrically insulating portion 160 is disposed on the package body 120 and includes the first and second electrically insulating layers 162 and 164.

1 to 3, the first electrically insulating layer 162 is disposed on the upper surfaces 122A and 122B of the second segments S2A and S2B in the upper surface of the package body 120. [ That is, the first electrically insulating layer 162 is disposed on the upper surface 122A of the second segment S2A in the first body portion 120A and on the upper surface 122A of the second segment S2B in the second body portion 120B. Is disposed on the surface 122B. The first electrically insulating layer 162 is disposed on the second segments S2A and S2B corresponding to the hatched portions except for the first segment S1 in which the molding member 150 is disposed.

The molding member 150 can protect the light emitting device package from external dust or the like so that the first segment S1 in which the molding member 150 is disposed on the upper part of the package body 120 is provided with the first electrical insulating layer 162 may not be disposed.

The second electrically insulating portion 164 is disposed on the side surfaces 126A, 126B of the package body 120. [ That is, the second electrical insulation portion 164 is disposed on the side surface 126A of the first body portion 120A and on the side surface 126B of the second body portion 120B.

In this way, when the electrical insulation portion 160 is disposed on the upper surface and the side surface of the package body 120, the package body 120 can be prevented from being short-circuited by external dust or the like.

The electrical insulation 160 also has a void. When such a void is provided, the electrically insulating portion 160 can exhibit excellent heat radiation characteristics.

If the thicknesses t1 and t2 of the electrical insulation part 160 are less than 1000 ANGSTROM, the electrical insulation function may not be faithfully performed. If the thicknesses of the electrical insulation part 160 are more than 5000 ANGSTROM, . The first thickness tl of the first electrically insulating layer 162 and the second thickness t2 of the second electrically insulating layer 164 may be between about 1000 A and about 5000 A, . Here, the first thickness t1 and the second thickness t2 may be different from each other or may be the same.

Further, each of the first and second electrically insulating layers 162 and 164 may include a transparent material or may include an oxide. For example, each of the first and second electrically insulating layers 162 and 164 may be formed of a material selected from the group consisting of SiO ₂ , TiO ₂ , SnO ₂ , ZnO, Si _x O _y , Si _x N _y Or x = y = 1), SiO _x N _y , ITO, Al ₂ O _3, or AZO.

If the material of the package body 120 is aluminum, when the upper surfaces 122A and 122B and the side surfaces 126A and 126B of the package 120 are surface-treated by anodizing, Al ₂ O ₃ may be formed on the package body 120 as the first and second electrically insulating layers 162 and 160. According to the anodizing surface treatment technique, when a mixed solution of sulfuric acid, hydrochloric acid, or sulfuric acid and oxalic acid is used as an electrolytic solution, Al ₂ O ₃ is applied to the surface of aluminum, which is the package body 120, with the first and second electrically insulating layers 162 and 164 As shown in FIG.

FIGS. 7A to 7E are cross-sectional views of the embodiment (C1 to C5) showing the enlarged portion 'C' shown in FIG.

The first electrically insulating layer 162 and the second electrically insulating layer 164 may be integrally formed as illustrated in FIG. 7A or may be formed in contact with each other separately as illustrated in FIG. 7B.

In addition, as illustrated in Figures 7C-7E, each of the first and second electrically insulating layers 162,164 may have a patterned surface. For example, the pattern of the surface of each of the first and second electrically insulating layers 162 and 164 may be a triangular shape 128A as shown in Fig. 7C, and may have a concave shape 128B Or may have a hemispherical shape 128C as shown in FIG. 7E, but embodiments are not limited thereto, and various types of patterns are possible, and may have a random pattern shape.

Although the first and second electrically insulating layers 162 and 164 are shown as having patterns in Figures 7A-7E, the embodiments are not limited in this regard. That is, only the first electrically insulating layer 162 may have a pattern, the second electrically insulating layer 164 may not have a pattern, and only the second electrically insulating layer 164 may have a pattern, May not have a pattern.

7A to 7E, when the surface of the first and second electrically insulating layers 162 and 164 has a pattern, the surface area is widened, so that the heat transfer efficiency between the electrically insulating portion 160 and the outside air The heat dissipation characteristics of the light emitting device package according to the embodiment can be further improved.

8 is a schematic cross-sectional view of a light emitting module according to an embodiment.

Referring to FIG. 8, at least one light emitting device package P1 to PK (where K is a positive integer of 1 or more) are mounted on the module substrate 110 so as to be spaced apart from each other. Each of the at least one light emitting device package P1 to PK corresponds to the light emitting device package illustrated in FIGS. 1 to 3 and the module substrate 110 corresponds to the module substrate 110 illustrated in FIG. 3, Reference numerals are used and redundant description is omitted.

The first electrically insulating layer 162 is disposed on the upper surfaces 122A and 122B of the second segments S2A and S2B in which the molding member 150 is not disposed in the upper surface of the package body 120, Since the layer 164 is disposed entirely on the side surfaces 126A and 126B of the package body 120, the light emitting device packages P1 to PK are mounted on the module substrate 110 as illustrated in FIG. 8 A phenomenon that the post-package body 120 is short-circuited by dust or the like can be prevented.

A plurality of light emitting device packages according to other embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may be used in various sterilizing apparatuses, or may function as a backlight unit or function as a lighting unit. For example, the lighting system includes a backlight unit, a lighting unit, can do.

9 is a perspective view of the air sterilizer 500 according to the embodiment.

9, the air sterilizing apparatus 500 includes a light emitting module 510 mounted on one surface of a casing 501, diffusive reflection members 530a and 530b for diffusely reflecting the emitted light in the deep ultraviolet wavelength band, And a power supply unit 520 for supplying available power required by the light emitting module unit 510.

First, the casing 501 may have a rectangular structure and may be formed as a unitary or compact structure including the light emitting module unit 510, the diffuse reflection members 530a and 530b, and the power supply unit 520. [ In addition, the casing 501 may have a material and shape effective for discharging heat generated inside the air sterilizing apparatus 500 to the outside. For example, the material of the casing 501 may be made of any one of Al, Cu, and alloys thereof. Therefore, the heat transfer efficiency with the outside air of the casing 501 is improved, and the heat radiation characteristic can be improved.

Alternatively, the casing 501 may have a unique outer surface shape. For example, the casing 501 may have an outer surface shape that is formed by, for example, corrugation or a mesh or an irregular irregular shape. Therefore, the heat transfer efficiency with the outside air of the casing 501 is further improved, and the heat radiation characteristic can be improved.

On the other hand, attachment plates 550 may be disposed at both ends of the casing 501. The attachment plate 550 refers to the absence of a bracket function used to lock and fix the casing 501 to the entire equipment as illustrated in Fig. The attachment plate 550 may protrude from both ends of the casing 501 in one direction. Here, one direction may be an inner direction of the casing 501 in which deep ultraviolet rays are emitted and diffuse reflection occurs.

Thus, the attachment plate 550 provided on both ends from the casing 501 provides a fixing area with the entire facility apparatus, so that the casing 501 can be more effectively fixedly installed.

The attachment plate 550 may take any of the form of a screw fastening means, a rivet fastening means, an adhesive means, and an attaching / detaching means, and the manner of these various fastening means is obvious at the level of those skilled in the art. do.

On the other hand, the light emitting module unit 510 is disposed on one surface of the casing 501. The light emitting module unit 510 emits ultraviolet rays to sterilize microorganisms in the air. To this end, the light emitting module unit 510 includes a module substrate 512 and a plurality of light emitting device packages 100 mounted on the module substrate 512. Here, the light emitting device package 100 corresponds to the light emitting device package illustrated in FIGS. 1 to 3, and the module substrate 512 corresponds to the module substrate 110 illustrated in FIG. 3 and FIG.

The module substrate 512 may be a PCB including a circuit pattern (not shown) arranged in a single row along the inner surface of the casing 501 and may include not only a general PCB but also a metal core PCB (MCPCB) Flexible PCB, and the like, but the present invention is not limited thereto.

Next, the diffuse reflection members 530a and 530b refer to a reflection plate type member formed to forcibly diffuse ultraviolet rays emitted from the light emitting module unit 510 described above. The front surface shape and the arrangement shape of the diffusely reflecting reflection members 530a and 530b may have various shapes. (For example, a radius of curvature) of the diffusive reflection members 530a and 530b is slightly changed, the diffused deep ultraviolet rays are irradiated to overlap with each other to increase the irradiation intensity, .

The power supply unit 520 receives power and supplies necessary power to the light emitting module unit 510. The power supply unit 520 may be disposed in the casing 501 described above. 9, the power supply unit 520 may be disposed on the inner wall side of the spacing space between the diffusive reflective members 530a and 530b and the light emitting module unit 510. [ A power connection unit 540 for electrically connecting the external power supply to the power supply unit 520 may be further disposed.

9, the power connection 540 may be in the form of a surface, but may have the form of a socket or cable slot through which an external power cable (not shown) may be electrically connected. Also, the power cable has a flexible extension structure and can be easily connected to an external power source.

10 shows a head lamp 900 including the light emitting device package according to the embodiment.

10, the headlamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904. [

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a module substrate (not shown). In this case, the light emitting device package may be as shown in FIGS.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

11 shows a lighting device 1000 including a light emitting device chip or a light emitting device package according to the embodiment.

Referring to FIG. 11, the lighting apparatus 1000 may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. have. In addition, the illumination device 1000 according to the embodiment may further include at least one of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting device package illustrated in FIGS. 1 to 3 or the light emitting device chips 130A to 130C illustrated in FIGS.

The cover 1100 may be in the form of a bulb or a hemisphere, and may be hollow in shape and partially open. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 can be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. [ This is because light from the light source module 1200 is sufficiently scattered and diffused to be emitted to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but it is not limited thereto and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400 and the heat generated from the light source module 1200 may be conducted to the heat discharger 1400. The light source module 1200 may include a light source 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the heat discharging body 1400 and has a plurality of light source portions 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or align with the substrate and connector 1250 of the light source 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may be reflected by the inner surface of the cover 1100 and may reflect the light returning toward the light source module 1200 toward the cover 1100 again. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be formed of an insulating material so as to prevent an electrical short circuit between the connection plate 1230 and the heat discharger 1400. The heat dissipation member 1400 can dissipate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 can be hermetically sealed. The holder 1500 may have a guide protrusion 1510 and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 penetrates.

The power supply unit 1600 processes or converts electrical signals provided from the outside and provides the electrical signals to the light source module 1200. The power supply unit 1600 may be housed in the receiving groove 1719 of the inner case 1700 and may be sealed inside the inner case 1700 by the holder 1500. [ The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide portion 1630 may have a shape protruding outward from one side of the base 1650. The guide portion 1630 can be inserted into the holder 1500. A plurality of components can be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge protection device, but are not limited thereto.

The extension 1670 may have a shape protruding outward from the other side of the base 1650. The extension portion 1670 can be inserted into the connection portion 1750 of the inner case 1700 and can receive an external electrical signal. For example, the extension portion 1670 may be equal to or less than the width of the connection portion 1750 of the inner case 1700. Each of the "+ wire" and the "wire" may be electrically connected to the extension portion 1670 and the other end of the "wire" and the "wire" may be electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply part 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply providing part 1600 can be fixed inside the inner case 1700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package 110: module substrate
120: package body 120A, 120B:
122A, 122B, 123A, 123B, 124A, 124B, 125A, 125B:
126A, 126B: side surface 130, 130A, 130B, 130C:
131: substrate 132: buffer layer
133A: first conductivity type semiconductor layer 133B:
133C: a second conductive type first semiconductor layer 133D: a second conductive type second semiconductor layer
134A, 134B, 134C: Electrode 135A, 135B: Bump
136A and 136B: first and second electrode pads 137: protective layer
138: Sub mount 139: Support substrate
142, 144: wire 150: molding member
160: electrical insulation part 162, 164: electrical insulation layer
500: air sterilizer 501: casing
510: light emitting module section 530a, 530b: diffuse reflection member
520: Power supply unit 800: Display device
810: bottom cover 820: reflector
830, 835, 901: light emitting module 840: light guide plate
850, 860: prism sheet 870: display panel
872: Image signal output circuit 880: Color filter
900: Headlamp 902: Reflector
903: Shade 904: Lens
1000: illumination device 1100: cover
1200: light source module 1400: heat sink
1600: power supply unit 1700: inner case
1800: Socket

Claims (10)

A package body having a top surface including a first segment and a second segment, the package body having electrical conductivity;
A light emitting device chip mounted on the first segment of the upper surface of the package body and emitting light in a wavelength band of 100 nm to 400 nm;
A molding member arranged to surround the light emitting device chip on the first segment of the upper surface of the package body; And
And an electrically insulating portion disposed on the package body and having a void,
The electrically insulating portion
A first electrically insulating layer disposed over the second segment of the top surface of the package body; And
And a second electrically insulating layer disposed on a side surface of the package body. The light emitting device package according to claim 1, wherein the package body comprises a reflective material. The light emitting device package according to claim 1, wherein the first electrically insulating layer and the second electrically insulating layer are integrated. The light emitting device package according to claim 1, wherein the first electrically insulating layer and the second electrically insulating layer are disposed in contact with each other while being separated from each other. The light emitting device package according to claim 1, wherein at least one of the first and second electrically insulating layers has a patterned surface. The light emitting device package according to claim 1, wherein the thickness of the first or second electrically insulating layer is 1000 A to 5000 A. The light emitting device package according to claim 1 or 2, wherein the first or second electrically insulating layer comprises a transparent material. 8. The light emitting device package according to claim 7, wherein the first or second electrically insulating layer comprises an oxide. The method of claim 1 or 2, wherein the first or second electrically insulating layer is formed of a material selected from the group consisting of SiO ₂ , TiO ₂ , SnO, ZnO, Si _x O _y , Si _x N _y , SiO _x N _y , ITO, Al ₂ O ₃ or AZO. At least one light emitting device package; And
And a module substrate on which the at least one light emitting device package is mounted,
The at least one light emitting device package according to any one of claims 1 to 6,

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