KR20150017543A - Ultraviolet Light Emitting Device - Google Patents

Abstract

An ultraviolet light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer, an active layer which is arranged on the first conductive semiconductor layer and emits light of an ultraviolet wavelength band, a first semiconductor layer of a second conductive type which is arranged on the active layer, a second conductive reflection layer which is arranged on the first semiconductor layer of the second conductive type and reflects the light with a different reflectivity according to the incident direction of the light emitted from the active layer, and a second semiconductor layer of the second conductive type which is arranged on the second conductive reflection layer. The second conductive reflection layer and the second semiconductor layer of the second conductive type have uneven parts, and a concave side exposes the first semiconductor layer of the second conductive type.

Description

[0001] Ultraviolet Light Emitting Device [0002]

An embodiment relates to an ultraviolet light emitting element.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are attracting attention as a core material for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

1 is a cross-sectional view of a conventional light emitting device, which is composed of a substrate 10, a light emitting structure 20, an n-type electrode 32 and a p-type electrode 34.

The light emitting structure 20 disposed on the substrate 10 in Fig. 1 is composed of an n-type semiconductor layer 22, an active layer 24 and a p-type semiconductor layer 26. The n-type electrode 32 is disposed on the n-type semiconductor layer 22 and the p-type electrode 34 is disposed on the p-type semiconductor layer 26.

If light in the ultraviolet wavelength band is emitted from the active layer 24 and each of the n-type and p-type semiconductor layers 22 and 26 is made of GaN, the light is absorbed in the n-type and p-type GaN layers 22 and 26 So that the light extraction efficiency can be deteriorated. If the n-type and p-type semiconductor layers 22 and 26 are formed of AlGaN, the light amount is improved but injection of holes through the p-type AlGaN layer 26A may not be easy. In order to solve this problem, the p-type GaN layer 26B may be further disposed on the p-type AlGaN layer 26A. However, since light is absorbed by the p-type GaN layer 26B, the light extraction efficiency is inevitably lowered.

The embodiment provides an ultraviolet light-emitting device improved in light extraction efficiency.

The ultraviolet light-emitting element of the embodiment includes a first conductivity type semiconductor layer; An active layer disposed on the first conductive semiconductor layer and emitting light in an ultraviolet wavelength band; A second conductive type first semiconductor layer disposed on the active layer; A second conductive type reflective layer disposed on the second conductive type first semiconductor layer and reflecting the light with a different reflectance according to a direction in which light emitted from the active layer is incident; And a second conductive type second semiconductor layer disposed on the second conductive type reflective layer, wherein the second conductive type reflective layer and the second conductive type second semiconductor layer include concave and convex portions, Thereby exposing the conductive type first semiconductor layer.

Wherein the ultraviolet light-emitting device comprises: a first electrode disposed on the first conductive semiconductor layer; And a second-1 electrode disposed on the upper surface of the convex portion.

The ultraviolet light emitting device further includes a recessed reflective layer disposed on the exposed second conductive type first semiconductor layer in the recessed portion.

The ultraviolet light emitting device further includes a second-second electrode which is disposed on a side surface of the convex portion and connects the second-first electrode and the concave reflection layer.

The second conductive type reflective layer may have an omni-directional reflector (ODR) or a distributed Bragg reflector (DBR) structure.

The concave portion may have a polygonal, circular or bar-like planar shape.

Wherein the first conductive type semiconductor layer, the active layer, the second conductive type first semiconductor layer, the second conductive type reflective layer, and the second conductive type second semiconductor layer are formed on the substrate, Are sequentially arranged on the substrate.

Alternatively, the ultraviolet light-emitting device further includes a support substrate, wherein the second conductive type second semiconductor layer, the second conductive type reflective layer, the second conductive type first semiconductor layer, the active layer, and the first conductive type A semiconductor layer is sequentially disposed on the supporting substrate.

Alternatively, the ultraviolet light emitting element may include a submount; First and second metal layers disposed horizontally spaced apart from each other on the submount; A first bump disposed between the first metal layer and the first electrode; And a second bump disposed between the second metal layer and the second-1 electrode.

Each of the first electrode, the second electrode, and the second electrode may be made of a material having at least one of a reflective property and a transmissive property.

Each of the first conductive type semiconductor layer and the second conductive type first semiconductor layer may include AlGaN, and the second conductive type second semiconductor layer may include GaN or InAlGaN.

The width of the concave portion may be larger than the width of the convex portion.

Although the ultraviolet light emitting device according to the embodiment has a different reflectance depending on the direction of the light incident on the second conductive type reflective layer, the concave / convex portion may be formed in the second conductive type reflective layer and the second conductive type second semiconductor layer, The second-1 electrode including the reflective or transmissive material, the lobular reflection layer, and the second -2 electrode can be disposed to reflect light irrespective of the direction of the incident light, so that the light extraction efficiency can be increased.

1 is a cross-sectional view of a conventional light emitting device.
2 is a plan view of an ultraviolet light emitting device according to an embodiment.
3 is a cross-sectional view taken along the line A-A 'shown in Fig.
4A and 4B are views showing characteristics of the second conductive type reflective layer.
5A to 5D show various planar shapes of the concavo-convex portion according to the embodiment.
6 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
7 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
8 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
9 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
10 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
11 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment.
12A to 12F are cross-sectional views illustrating a manufacturing method according to an embodiment of the ultraviolet light emitting device illustrated in FIG.
13 is a cross-sectional view of a light emitting device package according to an embodiment.
14 is a perspective view of an air sterilizing apparatus including a light emitting device package according to an embodiment.
15 shows a display device including a light emitting device package according to an embodiment.
16 shows a headlamp including the light emitting device package according to the embodiment.
17 shows a lighting device including the light emitting device or the light emitting device package according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under includes both elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

FIG. 2 is a plan view of the ultraviolet light emitting device 100A according to the embodiment, and FIG. 3 is a sectional view taken along the line A-A 'shown in FIG.

2 and 3, the ultraviolet light emitting device 100A includes a substrate 110, a buffer layer 112, a light emitting structure 120, a first electrode 132, a second electrode 132-1, And a lobe reflection layer 134-2.

The substrate 110 may comprise a conductive material or a non-conductive material. For example, the substrate 110 may include at least one of sapphire (Al ₂ O ₃ ), AlN, GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si.

A buffer layer (or transition layer) 112 may be disposed between the substrate 110 and the light emitting structure 120 to improve the difference in thermal expansion coefficient and lattice mismatch between the substrate 110 and the light emitting structure 120. The buffer layer 112 may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example. Further, the buffer layer 112 may have a single layer structure or a multi-layer structure.

The light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 sequentially disposed on a buffer layer 112.

The first conductive semiconductor layer 122 may be formed of a compound semiconductor such as a group III-V or a group II-VI doped with a first conductive dopant, which is disposed on the buffer layer 112. When the first conductivity type semiconductor layer 122 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant.

For example, the first conductivity type semiconductor layer 122 may have a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + Semiconductor material. The first conductive semiconductor layer 122 may include one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 124 is disposed on the first conductivity type semiconductor layer 122 and injects electrons (or holes) injected through the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126 (Or electrons) of the active layer 124 meet each other to emit light having energy determined by the energy band inherent to the material of the active layer 124. [

The active layer 124 may be at least one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure Can be formed.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But are not limited thereto. The well layer may be formed of a material having a band gap energy lower than the band gap energy of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 124. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 124. [ For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

According to the embodiment, the active layer 124 emits light in the ultraviolet wavelength band. Here, the ultraviolet wavelength band means a wavelength band of 100 nm to 400 nm. In particular, the active layer 124 can emit light in a wavelength band of 100 nm to 280 nm.

The second conductive semiconductor layer 126 is disposed on the active layer 124 and may be formed of a semiconductor compound. The second conductive semiconductor layer 126 may be formed of a compound semiconductor such as a III-V group or a II-VI group. For example, the second conductivity type semiconductor layer 126 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? . ≪ / RTI > The second conductivity type semiconductor layer 126 may be doped with a second conductivity type dopant. When the second conductive semiconductor layer 126 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The first conductive semiconductor layer 122 may be an n-type semiconductor layer and the second conductive semiconductor layer 126 may be a p-type semiconductor layer. Alternatively, the first conductivity type semiconductor layer 122 may be a p-type semiconductor layer and the second conductivity type semiconductor layer 126 may be an n-type semiconductor layer.

The light emitting structure 120 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

When the active layer 124 emits light in the ultraviolet wavelength band, the second conductivity type semiconductor layer 126 may include a second conductive type semiconductor layer 126A, a second conductive type reflective layer 126B And a second conductive type second semiconductor layer 126C.

The second conductive type first semiconductor layer 126A is disposed on the active layer 124. Each of the second conductive type first semiconductor layer 126A and the first conductive type semiconductor layer 122 may include AlGaN. This is because AlGaN absorbs less light in the ultraviolet wavelength band than GaN or InAlGaN.

If the first conductive type is n-type and the second conductive type is p-type, the second conductive type first semiconductor layer 126A may serve as an electron blocking layer (EBL). Alternatively, the second conductive type first semiconductor layer 126A serving as the electron blocking layer may have an AlGaN / AlGaN super lattice layer structure or an AlGaN bulk layer structure.

The second conductive type second semiconductor layer 126C is disposed on the second conductive type first semiconductor layer 126A. The second conductive type second semiconductor layer 126C improves the electrical characteristics of the ultraviolet light emitting device 100A by uniformly supplying holes from the second-1 electrode 134-1 to the active layer 124. [ For this purpose, the second conductive type second semiconductor layer 126C may include, for example, GaN or InAlGaN. However, since GaN or InAlGaN absorbs more light in the ultraviolet wavelength band than AlGaN, the light extraction efficiency may be lowered due to the presence of the second conductive type second semiconductor layer 126C. In order to prevent this, the second conductive type reflective layer 126B may be disposed between the second conductive type first semiconductor layer 126A and the second conductive type second semiconductor layer 126C. The second conductive type reflective layer 126B disposed on the second conductive type first semiconductor layer 126A reflects light in the ultraviolet wavelength band emitted from the active layer 124 toward the substrate 110. [ For this purpose, the second conductive type reflective layer 126B may have a structure of an omni-directional reflector (ODR) or a distributed Bragg reflector (DBR) structure, for example.

Here, the DBR structure may be a structure in which a low refractive index layer and a high refractive index layer are alternately laminated to have a thickness of "m? / 4n ". ? represents the wavelength of light emitted from the active layer 124, n represents the refractive index of the medium, and m is an odd number. Low refractive index layer is, for example, may comprise silicon oxide (SiO _2, refractive index 1.4) or aluminum oxide (Al ₂ O _3, the refractive index 1.6), the high refractive index layer is, for example, silicon nitride (Si ₃ N ₄ , A refractive index of 2.05 to 2.25), titanium nitride (TiO ₂ , refractive index of 2 or more), or Si-H (refractive index of 3 or more), but the embodiment is not limited thereto. The number of the low refractive index layer and the number of the high refractive index layer can be variously changed.

The ODR structure may be a structure in which a metal reflective layer and a low refractive index layer are formed on the metal reflective layer. A metal reflective layer may be Ag or Al, and a low refractive index layer may be a transparent material such as _{SiO 2, Si 3 N 4,} MgO. Alternatively, the ODR structure may be a structure in which a layer in which a SiO ₂ layer and a TiO ₂ layer are stacked is repeatedly laminated, but the embodiment is not limited thereto.

The ODR or DBR implementing the second conductive type reflective layer 126B exhibits different reflectivities depending on the direction in which the light in the ultraviolet wavelength band is incident on the second conductive type reflective layer 126B.

4A and 4B are views showing the characteristics of the second conductive type reflective layer 126B by way of example. 4A shows a direction in which the light emitted from the active layer 124 is incident on the second conductive reflective layer 126B after passing through the second conductive type first semiconductor layer 126A by an angle of 0 DEG, FIG. 4B is a graph showing the reflectance of the second conductive reflective layer 126B. The abscissa indicates the position in the transverse direction of the ultraviolet light emitting device 100A, and the ordinate indicates the reflectance.

4A, the light emitted from the active layer 124 is incident on the DBR 126B in a vertical direction (corresponding to 0 DEG in FIG. 4A) 4b), the light reflectance in the DBR 126B is maximized as shown in FIG. 4B. However, when the light emitted from the active layer 124 is incident on the DBR 126B while being away from the vertical direction, the light reflectance in the DBR 126B gradually decreases as shown in FIG. 4B, . For example, when light is incident on the DBR 126B at 30 DEG, the light reflectance at the DBR 126B becomes smaller than the light reflectance at the incident angle of 15 DEG.

As described above, in order to eliminate the phenomenon that the light reflectance varies depending on the direction in which the light is incident on the second conductive reflective layer 126B, according to the embodiment, the second conductive reflective layer 126B and the second conductive- The second semiconductor layer 126C includes irregularities as illustrated in Figs. 2 and 3. Here, the concave-convex portion has a concave-convex pattern (GP: Groove Part (or concave portion) and a convex portion (RP)). And the second conductive type first semiconductor layer 126A is exposed in the recess GP.

According to the embodiment, in the concavo-convex portion, the width W1 of the concave portion GP may be different from the width W2 of the convex portion RP. For example, W1 may be greater than W2. At least one of W1 and W2 may be set in consideration of the operation voltage Vf of the ultraviolet light emitting device 100A.

Meanwhile, the first electrode 132 is disposed on the first conductive semiconductor layer 122 exposed by mesa etching. The first electrode 132 may include an ohmic contact material and may function as an ohmic layer so that a separate ohmic layer (not shown) may not be disposed, and a separate ohmic layer may be formed under the first electrode 132 .

The second-first electrode 134-1 is disposed on the upper surface of the convex portion RP and the concave reflection layer 134-2 is disposed on the second conductive type first semiconductor layer 122 exposed in the recess GP do.

As described above, the second conductive type reflective layer 126B and the second conductive type second semiconductor layer 126C have a concavo-convex pattern and the second-first electrode 134-1 and the lobe reflection layer 134-2, The phenomenon that the reflectance varies depending on the direction of the light incident on the second conductive reflective layer 126B can be reduced.

5A to 5D show various planar shapes of the concavo-convex portion according to the embodiment.

Although the concave and convex portions formed in the second conductive type reflective layer 126B and the second conductive type second semiconductor layer 126C illustrated in FIG. 2 have a rectangular planar shape, the embodiments are not limited thereto. That is, the concave and convex portion may have a circular planar shape as illustrated in FIGS. 5A and 5B, or may have various polygonal planar shapes such as a hexagon illustrated in FIG. 5D, and may have a bar-shaped It may be a planar shape.

In addition, as illustrated in Figs. 2, 5A, 5C, and 5D, the sizes of the plurality of recesses may be all the same, and the sizes of the plurality of recesses may be different from each other as illustrated in Fig. 5B.

Further, the etching process for forming the pattern of concave-convex portions shown in Fig. 5D may be easier than the etching process for forming the pattern of concave-convex portions shown in Figs. 2 and 5A to 5C.

Fig. 6 shows a cross-sectional view of an ultraviolet light-emitting device 100B according to another embodiment.

Referring to FIG. 6, the ultraviolet light emitting device 100B further includes a second -2 electrode 134-3. Except for this, the ultraviolet light emitting device 100B illustrated in FIG. 6 is the same as the ultraviolet light emitting device 100A illustrated in FIG. 2 and FIG. 3, and thus the same reference numerals are used to omit redundant description.

The second -2 electrode 134-3 is disposed on the side surface of the convex portion RP on the convexo-concave portion, and electrically connects the second-1 electrode 134-1 and the concave-convex reflective layer 134-2.

Each of the first electrode 132, the second-first electrode 134-1, the lobe reflection layer 134-2, and the second-electrode 134-3 has at least one of a reflective property and a transmissive property And may be made of a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof.

In particular, each of the second-first electrode 134-1, the concave reflection layer 134-2 and the second-electrode 134-3 may be a transparent conductive oxide (TCO). For example, each of the second-1 electrode 134-1, the lobe reflection layer 134-2, and the second -2 electrode 134-3 may be formed of the above-described metal material, ITO (indium tin oxide), IZO zinc oxide (IZTO), indium zinc oxide (IZTO), indium zinc oxide (IZO), indium gallium zinc oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide And may include at least one of gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. In particular, the second-1 electrode 134-1 may include a material that makes an ohmic contact with the second conductive type second semiconductor layer 126C, and the lobe reflection layer 134-2 may include a material that contacts the second conductive- Lt; RTI ID = 0.0 > 126A. ≪ / RTI >

In the ultraviolet light emitting device 100B illustrated in FIG. 6, each of the second-first electrode 134-1 and the lobe reflection layer 134-2 may be formed as a single-layer or multilayer reflective electrode material having an ohmic characteristic . If the second-1 electrode 134-1 and the lobular reflection layer 134-2 each perform an ohmic function, a separate ohmic layer (not shown) may not be formed.

Fig. 7 shows a cross-sectional view of an ultraviolet light-emitting device 100C according to still another embodiment.

Referring to FIG. 7, the ultraviolet light emitting device 100C does not include the lobe reflection layer 134-2. Except for this, the ultraviolet light-emitting device 100C illustrated in FIG. 7 is the same as the ultraviolet light-emitting device 100A illustrated in FIGS. 2 and 3, and thus the same reference numerals are used to omit redundant description.

In the ultraviolet light emitting device 100B illustrated in FIG. 6, the lobe reflection layer 134-2, which is connected to the second-first electrode 134-1 by the second-second electrode 134-3, (134). ≪ / RTI > 6, the area of the second electrode 134 is wider than that of the ultraviolet light emitting devices 100A and 100C illustrated in FIGS. 3 and 7, so that many holes are formed in the active layer 124, . ≪ / RTI >

The ultraviolet light emitting devices 100A, 100B, and 100C illustrated in FIGS. 3, 6, and 7 have a horizontal structure in which the substrate 110 is disposed under the first conductive semiconductor layer 122, But is not limited thereto. That is, according to another embodiment, the ultraviolet light emitting device may have a vertical type or a flip bonding structure.

8 to 10 are sectional views of the ultraviolet light emitting devices 100D, 100E and 100F according to still another embodiment of the vertical structure.

The ultraviolet light emitting devices 100A to 100C illustrated in FIGS. 3, 6, and 7 have a horizontal structure, and thus the first conductivity type semiconductor layer 122, the active layer 124, the second conductivity type first semiconductor layer 126A The second conductive type reflective layer 126B and the second conductive type second semiconductor layer 126C are sequentially arranged on the substrate 110. [ On the other hand, since the ultraviolet light emitting devices 100D to 100F illustrated in FIGS. 8 to 10 have a vertical structure, the second conductive type second semiconductor layer 126C, the second conductive type reflective layer 126B, The first semiconductor layer 126A, the active layer 124, and the first conductivity type semiconductor layer 122 are sequentially disposed on the support substrate 140. [ Except for these differences, each of the ultraviolet light emitting devices 100D, 100E, and 100F illustrated in FIGS. 8 to 10 is the same as each of the ultraviolet light emitting devices 100A, 100B, and 100C illustrated in FIGS. Therefore, redundant description will be omitted.

The ultraviolet light emitting device 100D having the vertical bonding structure illustrated in FIG. 8 includes the light emitting structure 120, the second-first electrode 134-1, the recessed reflective layer 134-2, the supporting substrate 140, Electrode 142 as shown in FIG. The ultraviolet light emitting device 100E of the vertical bonding structure illustrated in FIG. 9 further includes a second-second electrode 134-3 in the structure of the ultraviolet light emitting device 100D illustrated in FIG. In the ultraviolet light emitting device 100F of the vertical bonding structure illustrated in FIG. 10, the lobe reflection layer 134-2 is omitted in the structure of the ultraviolet light emitting device 100E illustrated in FIG.

The support substrate 140 may include a conductive material or a non-conductive material. For example, the support substrate 140 may include, but is not limited to, at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si. If the supporting substrate 140 is of a conductive type, no separate electrode is disposed on the supporting substrate 140, and the entire supporting substrate 140 can serve as an electrode. For this, the support substrate 140 can use a metal having a high electrical conductivity and can sufficiently dissipate heat generated when the light emitting device operates. Thus, a metal having a high thermal conductivity can be used.

For example, the support substrate 140 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Au), a copper alloy (Cu Alloy), a nickel (Ni), a copper-tungsten (Cu-W), a carrier wafer (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.), and the like.

The first electrode 142 may be formed of a reflective material that reflects light emitted from the active layer 124 as in the case of the first electrode 132 shown in FIG. 3, FIG. 6, or FIG. 7, And a light transmitting material that transmits the light.

11 shows a cross-sectional view of an ultraviolet light-emitting device 100G according to another embodiment having a flip-bonding structure.

Since the ultraviolet light emitting device 100G illustrated in FIG. 11 has a flip chip bonding structure, the submount 150, the protective layer 152, the first and second metal layers (or electrode pads) 154A and 154B, And second bumps 156A and 156B. Except for these differences, since the ultraviolet light emitting device 100G illustrated in FIG. 11 is the same as the ultraviolet light emitting device 100A illustrated in FIG. 3, the same reference numerals are used for the overlapped portions, and a detailed description thereof will be omitted .

The submount 150 may be formed of a semiconductor substrate made of, for example, AlN, BN, SiC, GaN, GaAs, Si, or the like, and may be formed of a semiconductor material having excellent thermal conductivity. In addition, a device for preventing electrostatic discharge (ESD) in the form of a zener diode may be included in the submount 150. [

The first and second metal layers 154A and 154B are disposed on the submount 150 in a horizontal direction. The first bump 156A is disposed between the first metal layer 154A and the first electrode 132 and the second bump 156B is disposed between the second metal layer 154B and the second electrode 134. [

The first electrode 132 is connected to the first metal layer 154A of the submount 150 via the first bump 156A and the second electrode 134 is connected to the submount 150A through the second bump 156B, Of the second metal layer 154B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 132 and the first bump 156A and a second upper bump metal layer (not shown) is disposed between the first metal layer 154A and the first bump 156A A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate the position where the first bump 156A is to be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 134 and the second bump 156B, and a second lower bump metal layer (not shown) is disposed between the second metal layer 154B and the second bump 156B. A metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate the position where the second bump 156B is to be positioned.

If the submount 150 is formed of a material having electrical conductivity such as Si, a protective layer (not shown) may be formed between the first and second metal layers 154A and 154B and the submount 150 as illustrated in FIG. 152 may be further disposed. Here, the protective layer 152 may be formed of an insulating material.

Hereinafter, a manufacturing method according to an embodiment of the ultraviolet light emitting device 100A illustrated in FIG. 3 will be described as follows. However, it is needless to say that the ultraviolet light emitting device 100A illustrated in FIG. 3 is not limited to this and can be manufactured by other methods.

12A to 12F are cross-sectional views illustrating the manufacturing method of the embodiment of the ultraviolet light emitting device 100A illustrated in FIG.

Referring to FIG. 12A, a buffer layer 112 is formed on a substrate 110.

The substrate 110 can be formed of a conductive or non-conductive material. However, when the substrate 110 is a silicon substrate, the light emitting structure 120 is easily cracked due to the difference in thermal expansion coefficient between the silicon and the nitride based light emitting structure layer 120 and the lattice mismatch, cracks may be generated. To prevent this, a buffer layer 112 may be selectively formed on the substrate 110. The buffer layer 112 may be formed of at least one material selected from the group consisting of, for example, Al, In, N, and Ga, but is not limited thereto. Further, the buffer layer 112 may be formed in the form of a single layer or a multilayer structure.

The buffer layer 112 is formed on the substrate 110 and then the first conductive semiconductor layer 122, the active layer 124, the second conductive semiconductor layer 126A, A reflective layer 126B and a second conductive type second semiconductor layer 126C are sequentially formed.

The first conductivity type semiconductor layer 122 may be formed of a III-V or II-VI compound semiconductor doped with the first conductivity type dopant, and the first conductivity type semiconductor layer 122 may be an n-type semiconductor layer The first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant, but is not limited thereto.

The first conductive semiconductor layer 122 has a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) May be formed using a semiconductor material. The first conductive semiconductor layer 122 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP. As described above, when the active layer 124 emits light in the ultraviolet wavelength band, the first conductivity type semiconductor layer 122 may be formed of AlGaN.

The active layer 124 may be formed of at least one of a single well structure, a multi-well structure, a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. For example, the active layer 124 may be formed by implanting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But are not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be further formed on and / or below the active layer 124. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 124. [ For example, the conductive clad layer may be formed of GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

The second conductive type first and second semiconductor layers 126A and 126C may be formed using a compound semiconductor such as a group III-V or II-VI group, and the second conductive type dopant may be doped. For example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) The second semiconductor layers 126A and 126C can be formed. When the first and second semiconductor layers 126A and 126C are a p-type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant . The second conductive type first semiconductor layer 126A may be formed of AlGaN and the second conductive type second semiconductor layer 126C may be formed of GaN or InAlGaN when light in the ultraviolet wavelength band is emitted from the active layer 124. [ .

In addition, the second conductive type reflective layer 126B may be formed of a DBR structure or an ODR structure.

12B, a patterned photoresist layer 160 is formed on the second conductive type second semiconductor layer 126C, and the patterned photoresist layer 160 is etched using a second conductive type The second semiconductor layer 126C, the second conductive reflective layer 126B, the second conductive semiconductor layer 126A, the active layer 124, and the first conductive semiconductor layer 122 are subjected to mesa etching.

After exposing the first conductive semiconductor layer 122 by mesa etching, the photoresist layer 160 is removed as shown in FIG. 12C.

Thereafter, as shown in FIG. 12D, a concave-convex pattern, that is, a portion corresponding to the concave portion GP is formed to expose a portion corresponding to the concave portion GP, and a portion corresponding to the convex portion RP, A patterned photoresist layer 162 that covers the photoresist layer 122 is formed.

12E, the second conductive type second semiconductor layer 126C and the second conductive type reflective layer 126B are etched using the photoresist layer 162 as an etching mask to form recesses GP and Thereby forming convex portions RP.

Thereafter, as shown in Fig. 12F, the photoresist layer 162 is removed.

3, the first electrode 132 is formed on the exposed first conductive type semiconductor layer 122 and the bottom surface GP-1 of the recess GP and the convex portion RP A lobesubstance reflection layer 134-2 and a second-1 electrode 134-1 are formed on the upper surface 126C-1 of the liquid crystal display panel.

For example, each of the first electrode 132, the second-1 electrode 134-1, and the lobe reflection layer 134-2 may be formed of a metal, and Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof.

In particular, each of the second-first electrode 134-1 and the lobe reflection layer 134-2 may be formed of a transparent conductive oxide (TCO). For example, the second-1 electrode 134-1 may be formed of the above-described metal material and at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO IGTO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au , And at least one of Ni / IrOx / Au / ITO, and the material is not limited thereto.

Further, the second-first electrode 134-1 may be formed as a single-layer or multi-layer with a reflective electrode material having an ohmic characteristic. If the second -1 electrode 134-1 performs an ohmic function, a separate ohmic layer (not shown) may not be formed.

In the case of the ultraviolet light emitting devices 100A to 100G according to the embodiment described above, even if the second conductive reflective layer 126B has different reflectance depending on the direction of the incident light, the second conductive reflective layer 126B and the second A second-first electrode 134-1 including a reflective or light-transmissive material, a lobe reflection layer 134-2, and a second-first electrode 134-1 are formed on the concave-convex portion of the conductive type second semiconductor layer 126C, And the second -2 electrode 134-3 is disposed. In this case, since the second-1 electrode 134-1, the lobe reflection layer 134-2, and the second -2 electrode 134-3 having reflectivity can reflect light irrespective of the direction of the incident light , The light in the ultraviolet band emitted from the active layer 124 is uniformly reflected, and the light extraction efficiency can be increased. Particularly, the lobe reflection layer 134-2 reflects the light toward the substrate 110 regardless of the direction of the incident light and emits the light to the outside of the ultraviolet light emitting device.

13 is a cross-sectional view of a light emitting device package 200 according to an embodiment.

The light emitting device package 200 according to the embodiment includes the ultraviolet light emitting device 100G, the substrate 210, the first and second package bodies 220A and 220B, the insulator 230, the first and second wires 242, 244 and a molding member 250.

The ultraviolet light-emitting device 100G is the ultraviolet light-emitting device illustrated in FIG. 11, and the same reference numerals are used to omit detailed description thereof. 11, the ultraviolet light emitting devices 100A to 100F illustrated in FIGS. 2, 6, 7, and 8 to 10 may include a plurality of light emitting devices 100A to 100F, It is needless to say that the present invention can be implemented by the package 200.

The first and second package bodies 220A and 220B are disposed on the substrate 210. Here, the substrate 210 may be, but is not limited to, a printed circuit board (PCB). The first and second package bodies 220A and 220B may be formed of aluminum, but the present invention is not limited thereto in order to improve heat dissipation characteristics when the light emitting device 100G emits ultraviolet light.

Although the submount 150 is shown as being disposed on the second package body 220B in Fig. 13, the embodiment is not limited thereto. That is, the submount 150 may be disposed on the first package body 220A instead of the second package body 220B. The first and second metal layers 154A and 154B of the ultraviolet light emitting device 100G are connected to the first and second package bodies 220A and 220B by the first and second wires 242 and 244, respectively. When the first and second package bodies 220A and 220B are formed of an aluminum material having electrical conductivity, the insulator 230 electrically separates the first package body 220A and the second package body 220B from each other It plays a role.

The first conductive semiconductor layer 122 is electrically connected to the substrate 210 through the first electrode 132, the first bump 156A, the first metal layer 154A, the first wire 242 and the first package body 220A. As shown in FIG. The second conductive semiconductor layer 126 is electrically connected to the second conductive semiconductor layer 126 through the second electrode 134, the second bump 156B, the second metal layer 154B, the second wire 244 and the second package body 220B. (Not shown).

The molding member 250 may be filled in a cavity formed by the first and second package bodies 220A and 220B to enclose and protect the ultraviolet light emitting device 100G. In addition, the molding member 250 may include a phosphor to change the wavelength of the light emitted from the ultraviolet light emitting device 100G.

A plurality of light emitting device packages according to other embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may be used in a sterilizing apparatus, function as a backlight unit, or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, .

14 is a perspective view of an air sterilizer 500 including a light emitting device package according to an embodiment.

14, the air sterilizer 500 includes a light emitting module 510 mounted on one surface of a casing 501, diffusive reflection members 530a and 530b for diffusing light of the emitted ultraviolet wavelength band, And a power supply unit 520 for supplying available power required by the light emitting module unit 510.

First, the casing 501 may have a rectangular structure and may be formed as a unitary or compact structure including the light emitting module unit 510, the diffuse reflection members 530a and 530b, and the power supply unit 520. [ In addition, the casing 501 may have a material and shape effective for discharging heat generated inside the air sterilizing apparatus 500 to the outside. For example, the material of the casing 501 may be made of any one of Al, Cu, and alloys thereof. Therefore, the heat transfer efficiency with the outside air of the casing 501 is improved, and the heat radiation characteristic can be improved.

Alternatively, the casing 501 may have a unique outer surface shape. For example, the casing 501 may have an outer surface shape that is formed by, for example, corrugation or a mesh or an irregular irregular shape. Therefore, the heat transfer efficiency with the outside air of the casing 501 is further improved, and the heat radiation characteristic can be improved.

On the other hand, attachment plates 550 may be disposed at both ends of the casing 501. The attachment plate 550 refers to the absence of a bracket function used to lock and fix the casing 501 to the entire equipment as illustrated in Fig. The attachment plate 550 may protrude from both ends of the casing 501 in one direction. Here, one direction may be an inner direction of the casing 501 in which deep ultraviolet rays are emitted and diffuse reflection occurs.

Thus, the attachment plate 550 provided on both ends from the casing 501 provides a fixing area with the entire facility apparatus, so that the casing 501 can be more effectively fixedly installed.

The attachment plate 550 may take any of the form of a screw fastening means, a rivet fastening means, an adhesive means, and an attaching / detaching means, and the manner of these various fastening means is obvious at the level of those skilled in the art. do.

On the other hand, the light emitting module unit 510 is disposed on one surface of the casing 501. The light emitting module unit 510 emits ultraviolet light, particularly ultraviolet light, to sterilize microorganisms in the air. To this end, the light emitting module unit 510 includes a substrate 512 and a plurality of light emitting device packages 200 mounted on the substrate 512. Here, the light emitting device package 200 may correspond to the light emitting device package 200 illustrated in FIG. 13, but is not limited thereto.

The substrate 512 may be a PCB that is arranged in a single row along the inner surface of the casing 501 and includes a circuit pattern (not shown). However, the substrate 512 may include not only a general PCB but also a metal core PCB (MCPCB), a flexible PCB, and the like, but the present invention is not limited thereto. Here, the substrate 512 may correspond to the substrate 210 illustrated in FIG.

Next, the diffuse reflection members 530a and 530b refer to a reflection plate type member formed to forcibly diffuse the deep ultraviolet light emitted from the light emitting module unit 510 described above. The front surface shape and the arrangement shape of the diffusely reflecting reflection members 530a and 530b may have various shapes. (For example, a radius of curvature) of the diffusive reflection members 530a and 530b is slightly changed, the diffused deep ultraviolet rays are irradiated to overlap with each other to increase the irradiation intensity, .

The power supply unit 520 receives power and supplies necessary power to the light emitting module unit 510. The power supply unit 520 may be disposed in the casing 501 described above. 14, the power supply unit 520 may be disposed on the inner wall side of the spacing space between the diffusive reflective members 530a and 530b and the light emitting module unit 510. As shown in FIG. A power connection unit 540 for electrically connecting the external power supply to the power supply unit 520 may be further disposed.

As illustrated in FIG. 14, the power connection 540 may be in the form of a surface, but may take the form of a socket or cable slot through which an external power cable (not shown) may be electrically connected. Also, the power cable has a flexible extension structure and can be easily connected to an external power source.

15 shows a display device 800 including the light emitting device package according to the embodiment.

15, the display device 800 includes a bottom cover 810, a reflection plate 820 disposed on the bottom cover 810, light emitting modules 830 and 835 for emitting light, a reflection plate 820 A light guide plate 840 disposed in front of the light guide plate 840 and guiding light emitted from the light emitting modules 830 and 835 toward the front of the display device and prism sheets 850 and 860 disposed in front of the light guide plate 840 An image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, a display panel 870 connected to the display panel 870, And a color filter 880 disposed in front of the color filter 880. Here, the bottom cover 810, the reflection plate 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. The substrate 830 may be a PCB or the like. The substrate 830 and the light emitting device package 835 may be the embodiment 200 shown in FIG.

The bottom cover 810 can house components within the display device 800. [ Also, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 840 or on the front surface of the bottom cover 810 in a state of being coated with a highly reflective material .

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 may be formed of a light-transmissive and elastic polymeric material on one side of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, as shown in the drawings, the plurality of patterns may be provided with a floor and a valley repeatedly as stripes.

In the second prism sheet 860, the direction of the floor and the valley on one side of the supporting film may be perpendicular to the direction of the floor and the valley on one side of the supporting film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of polyester and polycarbonate-based materials, and the light incidence angle can be maximized by refracting and scattering light incident from the backlight unit. The diffusion sheet includes a support layer including a light diffusing agent, a first layer formed on the light exit surface (first prism sheet direction) and a light incidence surface (in the direction of the reflection sheet) . ≪ / RTI >

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 make up an optical sheet, which may be made of other combinations, for example a microlens array, A combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the display panel 870. In addition to the liquid crystal display panel, other types of display devices requiring a light source may be provided.

16 shows a head lamp 900 including the light emitting device package according to the embodiment.

16, the headlamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). Here, the light emitting device package may be the embodiment 200 shown in FIG.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

17 shows a lighting apparatus 1000 including a light emitting device or a light emitting device package according to the embodiment.

17, the lighting apparatus 1000 may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800 have. In addition, the illumination device 1000 according to the embodiment may further include at least one of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting devices 100A to 100G illustrated in FIGS. 3, 6 to 11, or the light emitting device package 200 shown in FIG.

The cover 1100 may be in the form of a bulb or a hemisphere, and may be hollow in shape and partially open. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 can be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. [ This is because light from the light source module 1200 is sufficiently scattered and diffused to be emitted to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but it is not limited thereto and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400 and the heat generated from the light source module 1200 may be conducted to the heat discharger 1400. The light source module 1200 may include a light source 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the heat discharging body 1400 and has a plurality of light source portions 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or align with the substrate and connector 1250 of the light source 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may be reflected by the inner surface of the cover 1100 and may reflect the light returning toward the light source module 1200 toward the cover 1100 again. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be formed of an insulating material so as to prevent an electrical short circuit between the connection plate 1230 and the heat discharger 1400. The heat dissipation member 1400 can dissipate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 can be hermetically sealed. The holder 1500 may have a guide protrusion 1510 and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 penetrates.

The power supply unit 1600 processes or converts electrical signals provided from the outside and provides the electrical signals to the light source module 1200. The power supply unit 1600 may be housed in the receiving groove 1719 of the inner case 1700 and may be sealed inside the inner case 1700 by the holder 1500. [ The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide portion 1630 may have a shape protruding outward from one side of the base 1650. The guide portion 1630 can be inserted into the holder 1500. A plurality of components can be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge protection device, but are not limited thereto.

The extension 1670 may have a shape protruding outward from the other side of the base 1650. The extension portion 1670 can be inserted into the connection portion 1750 of the inner case 1700 and can receive an external electrical signal. For example, the extension portion 1670 may be equal to or less than the width of the connection portion 1750 of the inner case 1700. Each of the "+ wire" and the "wire" may be electrically connected to the extension portion 1670 and the other end of the "wire" and the "wire" may be electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply part 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply providing part 1600 can be fixed inside the inner case 1700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10, 110: substrate 20, 120: light emitting structure
100A to 100G: ultraviolet light emitting device 112: buffer layer
122: first conductivity type semiconductor layer 124: active layer
126A: second conductive type first semiconductor layer 126B: second conductive type reflective layer
126C: second conductive type second semiconductor layer 132, 142: first electrode
134-1: second electrode 1: electrode 134-2:
134-3: second -2 electrode 140: supporting substrate
150: Sub mount 152: Protective layer
154A, 154B: metal layer 156A, 156B: bump
200: light emitting device package 210: substrate
220A, 220B: package body 230: insulator
242, 244: wire 250: molding member
500: air sterilizer 501: casing
510: light emitting module section 530a, 530b: diffuse reflection member
520: Power supply unit 800: Display device
810: bottom cover 820: reflector
830, 835, 901: light emitting module 840: light guide plate
850, 860: prism sheet 870: display panel
872: Image signal output circuit 880: Color filter
900: Headlamp 902: Reflector
903: Shade 904: Lens
1000: illumination device 1100: cover
1200: light source module 1400: heat sink
1600: power supply unit 1700: inner case
1800: Socket

Claims (12)

A first conductive semiconductor layer;
An active layer disposed on the first conductive semiconductor layer and emitting light in an ultraviolet wavelength band;
A second conductive type first semiconductor layer disposed on the active layer;
A second conductive type reflective layer disposed on the second conductive type first semiconductor layer and reflecting the light with a different reflectance according to a direction in which light emitted from the active layer is incident; And
And a second conductive type second semiconductor layer disposed on the second conductive type reflective layer,
The second conductive type reflective layer and the second conductive type second semiconductor layer include concave and convex portions, and the concave portion exposes the second conductive type first semiconductor layer. The organic electroluminescent device according to claim 1, wherein the ultraviolet light-
A first electrode disposed on the first conductive semiconductor layer; And
And a second-1 electrode disposed on the upper surface of the convex portion. The ultraviolet light emitting device according to claim 2, further comprising a recessed reflective layer disposed on the exposed second conductive type first semiconductor layer in the recessed portion. The ultraviolet light emitting device according to claim 3, further comprising a second electrode (2-2) disposed on a side surface of the convex portion and connecting the second-first electrode and the concave portion reflective layer. The ultraviolet light emitting device according to claim 1, wherein the second conductive type reflective layer has an omni-directional reflector (ODR) or a distributed Bragg reflector (DBR) structure. The ultraviolet light emitting device according to claim 1, wherein the concave portion has a polygonal, circular or bar-like planar shape. 2. The apparatus of claim 1, further comprising a substrate,
Wherein the first conductivity type semiconductor layer, the active layer, the second conductivity type first semiconductor layer, the second conductivity type reflection layer, and the second conductivity type second semiconductor layer are sequentially disposed on the substrate. 3. The apparatus of claim 2, further comprising a support substrate,
Wherein the second conductive type second semiconductor layer, the second conductive type reflective layer, the second conductive type first semiconductor layer, the active layer, and the first conductive type semiconductor layer are sequentially disposed on the supporting substrate. The organic electroluminescent device according to claim 2, wherein the ultraviolet light-
Submount;
First and second metal layers disposed horizontally spaced apart from each other on the submount;
A first bump disposed between the first metal layer and the first electrode; And
And a second bump disposed between the second metal layer and the second electrode. The ultraviolet light emitting device according to claim 4, wherein each of the first electrode, the second electrode, the second electrode, and the second electrode is made of a material having at least one of a reflective property and a transmissive property. The method of claim 1, wherein each of the first conductive type semiconductor layer and the second conductive type first semiconductor layer includes AlGaN,
And the second conductive type second semiconductor layer comprises GaN or InAlGaN. The ultraviolet light emitting device according to claim 1, wherein a width of the concave portion is larger than a width of the convex portion.

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