KR20150091922A - Light Emitting Device and Light Emitting Device Package - Google Patents

Abstract

A light emitting device of an embodiment comprises a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type first semiconductor layer formed on the substrate; a first electrode exposed by being mesa-etched, and formed on the first conductivity type semiconductor layer; a second conductivity type second semiconductor layer formed on the second conductivity type first semiconductor layer; an insertion layer arranged between the second conductivity type first semiconductor layer and the second conductivity type second semiconductor layer, and having a void; and a second electrode formed on the second conductivity type second semiconductor layer.

Description

[0001] Light emitting device and light emitting device package [0002]

Embodiments relate to a light emitting device and a light emitting device package.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are attracting attention as a core material for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. . Accordingly, various attempts have been made to improve the light extraction efficiency of light emitting diodes.

Embodiments provide a light emitting device and a light emitting device package with improved light extraction efficiency.

The light emitting device of the embodiment includes: a substrate; A light emitting structure including a first conductive semiconductor layer sequentially disposed on the substrate, an active layer emitting light in a wavelength band of 100 nm to 400 nm, and a first conductive semiconductor layer; A first electrode on the first conductive type semiconductor layer exposed by mesa etching; A second conductive type second semiconductor layer on the second conductive type first semiconductor layer; An insertion layer disposed between the second conductive type first semiconductor layer and the second conductive type second semiconductor layer and having voids; And a second electrode on the second conductive type second semiconductor layer.

Wherein the insulator layer comprises a second conductive type third semiconductor layer disposed between the second conductive type first semiconductor layer and the second conductive type second semiconductor layer; And a second conductive type fourth semiconductor layer disposed between the second conductive type third semiconductor layer and the second conductive type second semiconductor layer, wherein the void penetrates the second conductive type third semiconductor layer And extend to the second conductive type fourth semiconductor layer.

The second conductive type third semiconductor layer may include GaN or may include Al _z Ga _{1 - z} N.

The second conductive type fourth semiconductor layer may include Al _y Ga _{1 - y} N.

Said second conductivity type third semiconductor layer described above, comprises a GaN second conductivity type first semiconductor layer is Al _x Ga _{1 -} and including _x N, and, x is 0.3 or more, y may be from 0.1 to 0.3 days .

Wherein the second conductive type third semiconductor layer comprises Al _z Ga _{1 - z} N, the second conductive type first semiconductor layer comprises Al _x Ga _{1 - x} N, x is not less than 0.3, y is 0.1 to 0.3, and z may be 0.1 or more.

The horizontal cross-sectional area of the second conductive type second semiconductor layer may be smaller than the horizontal cross-sectional area of the insertion layer.

And the horizontal cross-sectional area of each of the second conductive type second semiconductor layer and the interposing layer may be the same as the horizontal cross-sectional area of the second conductive type first semiconductor layer.

The horizontal cross-sectional area of each of the second conductive type second semiconductor layer and the interposing layer may be smaller than the horizontal cross-sectional area of the second conductive type first semiconductor layer.

The width of the upper side of the void facing the second conductive type second semiconductor layer may be smaller than the width of the lower side facing the second conductive type first semiconductor layer.

The ratio of the horizontal cross-sectional area of the void to the horizontal cross-sectional area of the second conductive type second semiconductor layer may be 20% to 60%.

A light emitting device package according to another embodiment includes a submount; The light emitting element disposed on the submount; First and second metal layers disposed horizontally spaced apart from each other on the submount; And first and second bump portions disposed between the first and second metal layers and the first and second electrodes, respectively.

A light emitting device according to another embodiment includes a substrate; A light emitting structure including an n-type AlGaN layer sequentially disposed on the substrate, an active layer emitting light in a wavelength band of 100 nm to 400 nm, and a p-type first AlGaN layer; A first electrode on the n-type AlGaN layer exposed by mesa etching; A p-type first GaN layer on the p-type first AlGaN layer; An insertion layer disposed between the p-type first AlGaN layer and the p-type first GaN layer and having voids; And a second electrode on the p-type first GaN layer.

The p-type second GaN layer disposed between the p-type first AlGaN layer and the p-type first GaN layer; And a p-type second AlGaN layer disposed between the p-type second GaN layer and the p-type first GaN layer, the voids penetrating the p-type second GaN layer to form the p-type second AlGaN layer As shown in FIG.

The p-type second AlGaN layer disposed between the p-type first AlGaN layer and the p-type first GaN layer; And a p-type third AlGaN layer disposed between the p-type second AlGaN layer and the p-type first GaN layer, the void penetrating the p-type second AlGaN layer to form the p-type third AlGaN layer As shown in FIG.

In the light emitting device package according to the embodiment, the insertion layer is disposed between the second conductive type first semiconductor layer and the second conductive type second semiconductor layer, and the light emitted from the active layer is reflected by voids in the insertion layer, Can be improved.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2A and 2B are enlarged partial cross-sectional views of an embodiment of the 'A' portion shown in FIG.
Fig. 3 shows photographs of voids formed on the insertion layer. Fig.
4 is a sectional view of a light emitting device according to another embodiment.
5 is a cross-sectional view of a light emitting device according to another embodiment.
6 is a graph showing the relationship between the ratio of the horizontal cross-sectional area of the void to the horizontal cross-sectional area of the second conductive type second semiconductor layer and the drive voltage increase rate.
7 is a cross-sectional view of a light emitting device package according to an embodiment.
8 is an enlarged cross-sectional view of the portion 'B' shown in FIG.
9A to 9E are cross-sectional views illustrating a method of manufacturing a light emitting device chip according to an embodiment.
10 is a perspective view of the air sterilizer according to the embodiment.
11 shows a headlamp including the light emitting device package according to the embodiment.
12 shows a lighting device including the light emitting device chip or the light emitting device package according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the present embodiment, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) on or under includes both the two elements being directly in contact with each other or one or more other elements being indirectly formed between the two elements.

Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

1 is a cross-sectional view of a light emitting device 100A according to an embodiment.

1 according to an embodiment of the present invention includes a substrate 110, a buffer layer 112, a light emitting structure 120, an electron blocking layer (EBL) 128, a void layer A first conductive semiconductor layer 130A, a second conductive semiconductor layer 140A, and first and second electrodes 152 and 154.

The light emitting structure 120 is disposed on the substrate 110.

As will be described later, the light emitted from the active layer 124 of the light emitting device 100A shown in Fig. 1 is emitted in the + Y axis direction. Accordingly, the substrate 110 may have a light-transmitting property so that the light emitted from the active layer 124 can be emitted through the substrate 110. [ For example, the substrate 110 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. In addition, the substrate 110 may have a mechanical strength enough to separate the nitride semiconductor into separate chips through a scribing process and a breaking process without causing warping of the entire nitride semiconductor.

A buffer layer 112 may further be disposed between the substrate 110 and the light emitting structure 120. The buffer layer 112 serves to improve lattice matching between the substrate 110 and the light emitting structure 120. For example, the buffer layer 112 may include, but is not limited to, AlN or an undoped nitride. The buffer layer 112 may be omitted depending on the type of the substrate 110 and the type of the light emitting structure 120.

The light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a first conductive semiconductor layer 126, which are sequentially disposed on a substrate 110.

The first conductive semiconductor layer 122 is disposed between the buffer layer 112 and the active layer 124 and may be formed of a compound semiconductor such as a group III-V or II-VI group. . For example, the first conductivity type semiconductor layer 122 may have a composition formula of Al _u In _v Ga _(1-uv) N (0? U? 1, 0? V? 1, 0? U + Semiconductor material, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the first conductive semiconductor layer 122 is an n-type semiconductor layer, the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 122 may be formed as a single layer or a multilayer, but is not limited thereto. Particularly, since the light emitting element 100A emits light in the ultraviolet (UV), especially deep ultraviolet (DUV) wavelength band, the first conductivity type semiconductor layer 122 is made of InAlGaN or AlGaN Or < / RTI >

In addition, the first conductivity type semiconductor layer 122 may include an undoped semiconductor layer 122A and a doped semiconductor layer 122B. For example, the undoped semiconductor layer 122A and the doped semiconductor layer 122B may comprise AlGaN.

The active layer 124 is disposed between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 and includes a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) Multi Quantum Well) structure, a quantum dot structure, or a quantum wire structure. InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs and InGaN / GaN, GaP (InGaP) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer. In particular, the active layer 124 can emit light in the ultraviolet wavelength band of 100 nm to 400 nm.

The second conductive type first semiconductor layer 126 may be disposed between the active layer 124 and the intercalation layer 130A. The second conductive type first semiconductor layer 126 may be formed of a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a second conductive type dopant. For example, the second conductivity type first semiconductor layer 126 has a compositional formula of _{In w Al x Ga 1 -w- x} N (0≤w≤1, 0≤x≤1, 0≤w + x≤1) Semiconductor material or AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. When the second conductive type first semiconductor layer 126 is a p-type semiconductor layer, the second conductive type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, and Ba.

The second conductive type second semiconductor layer 140A is disposed on the interlayer 130A.

If both the first and second semiconductor layers 126 and 140A of the second conductivity type are formed of GaN, the light of the ultraviolet wavelength band emitted from the active layer 124 is absorbed by GaN, have. Accordingly, the first and second semiconductor layers 126 and 140A of the second conductivity type may include at least one of AlGaN or InAlGaN instead of GaN.

However, when both the first and second semiconductor layers 126 and 140A of the second conductivity type are formed of only InAlGaN or AlGaN, injection of holes through the second electrode 154 may not be smooth. Therefore, the second conductive type first semiconductor layer 126. 140A may be formed of at least one of AlGaN or InAlGaN instead of GaN, and the second conductive type second semiconductor layer 126 or 140A may be formed of GaN. When the second conductive type second semiconductor layer 140A made of GaN is disposed, the contact surface with the second electrode 154 is widened, and the ohmic characteristics can be improved.

Meanwhile, an electron blocking layer 128 may be further disposed between the active layer 124 and the second conductive type semiconductor layer 126. The electron blocking layer 128 may be made of a nitride semiconductor having a larger energy band gap than the second conductive type first semiconductor layer 126. When the electron blocking layer (EBL) 128 has a larger energy bandgap than the second conductive type first semiconductor layer 126, electrons provided from the first conductive type semiconductor layer 122 reach the active layer of the MQW structure It is possible to effectively prevent the first conductive semiconductor layer 126 from overflowing without being recombined in the second conductive semiconductor layer 126. [ The electron blocking layer 128 may comprise at least one of, for example, GaN or InAlN. The thickness of the electron blocking layer 128 made of InAlN may be 10 nm to 50 nm. If the second conductive type first semiconductor layer 126 is made of graded AlGaN, the electron blocking layer 128 may be omitted.

The electron blocking layer 128 may have a higher Al content than the barrier layer of the MQW 124. Therefore, GaN may not be used for the electron blocking layer 128. When the electron blocking layer 128 contains AlGaN, the Al content of AlGaN may be at least 70%. In the deep ultraviolet (DUV) light emitting device, the Al content of the well layer of the MQW 124 is about 35%, and the Al content of the barrier layer of the MQW 124 is about 50%. The electron blocking layer 128 may be p-type. That is, the electron barrier layer 128 may be made of p-type AlGaN.

The interlevel layer 130A is disposed over the second conductive type first semiconductor layer 126 and includes a void 136A.

The insertion layer 130A may include a second conductive type third semiconductor layer 132A and a second conductive type fourth semiconductor layer 134A.

The second conductive type third semiconductor layer 132A is disposed between the second conductive type first semiconductor layer 126 and the second conductive type second semiconductor layer 140A. For example, the second conductive type third semiconductor layer 132A may include GaN or Al _z Ga _{1 - z} N.

The second conductive type fourth semiconductor layer 134A is disposed between the second conductive type third semiconductor layer 132A and the second conductive type second semiconductor layer 140A. For example, the second conductive type fourth semiconductor layer 134A may include Al _y Ga _{1 - y} N.

If the second conductive type third semiconductor layer 132A includes GaN, then Al _x Ga _{1 - x} N (when w = 0), which realizes the first conductive semiconductor layer 126 of the second conductivity type, Is 0.3 or more, and _{y in} Al _y Ga _{1 - y} N, which implements the second conductive type fourth semiconductor layer 134A, may be 0.1 to 0.3.

Alternatively, when the second conductive type third semiconductor layer 132A includes Al _z Ga _{1 - z} N, the second conductive type first semiconductor layer 126 may be Al _x Ga _{1 - x} N (w = 0 x is 0.3 or more in the time), a second conductivity type first 4 Al _y Ga ₁ to implement a semiconductor layer (134A), _- a is from _y N y is from 0.1 to 0.3, a second conductivity type third semiconductor layer (132A) In the implementing Al _z Ga _{1 - z} Nz, z may be greater than or equal to 0.1.

If the insertion layer 130A includes only GaN, that is, the second conductive type third semiconductor layer 132A and the second conductive type fourth semiconductor layer 134A each include only GaN, 136A. ≪ / RTI > Accordingly, at least one of the second conductive type third semiconductor layer 132A or the second conductive type fourth semiconductor layer 134A of the insertion layer 130A may be implemented as AlGaN.

FIGS. 2A and 2B are enlarged partial cross-sectional views illustrating embodiments A1 and A2 of the 'A' portion shown in FIG. 1. FIG.

1, the void 136A formed in the interlayer 130A extends through the second conductive type third semiconductor layer 132A and extends to the second conductive type fourth semiconductor layer 134A . Here, the void 136A is spaced apart from the bottom surface 142 of the second conductive type second semiconductor layer 140A, but the embodiment is not limited thereto.

According to another embodiment, as illustrated in FIG. 2A, the void 136B penetrates both the second and third semiconductor layers 132A and 134A of the second conductive type to form the second conductive type second semiconductor layer 140A, As shown in FIG.

2B, the void 136C penetrates only the second conductive type third semiconductor layer 132A to form the bottom surface 134A-1 of the second conductive type fourth semiconductor layer 134A ) May be formed.

Fig. 3 shows a photograph of the void 136A formed on the insertion layer 130A.

3, the width of the upper side facing the second conductive type second semiconductor layer 140A in the void 136A is smaller than the width of the lower side facing the second conductive type first semiconductor layer 126 . That is, the width of the top of the void 136A facing the -Y axis direction may be smaller than the width of the bottom of the void 136A facing the + Y axis direction.

Meanwhile, the first electrode 152 is disposed on the exposed first conductive semiconductor layer 122 by mesa etching.

The first electrode 152 may include, but is not limited to, at least one of, for example, AlN or BN. That is, any material that can reflect or transmit light emitted from the active layer 124 without absorption and that can be grown on the first conductivity type semiconductor layer 122 with good quality forms the first electrode 152 can do.

In addition, the first electrode 152 may function as an ohmic contact with the ohmic contact material so that it is not necessary to dispose a separate ohmic layer (not shown), and a separate ohmic layer may be formed on the first electrode 152 .

The second electrode 154 is disposed on the second conductive type second semiconductor layer 140A.

The second electrode 154 is in contact with the second conductive type second semiconductor layer 140A and may be formed of a metal. For example, the second electrode 154 may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or Hf and an optional combination thereof.

The second electrode 154 may be a transparent conductive oxide (TCO). For example, the second electrode 154 may be formed of a metal material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited thereto. The second electrode 154 may include a material in ohmic contact with the second conductive type second semiconductor layer 140A.

Further, the second electrode 154 may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic. If the second electrode 154 performs an ohmic function, a separate ohmic layer (not shown) may not be formed.

4 shows a cross-sectional view of a light emitting device 100B according to another embodiment.

In the case of the light emitting device 100A illustrated in Fig. 1, the horizontal cross-sectional area A1 of the second conductive type second semiconductor layer 140A on the two-dimensional plane formed by the X axis and the Z axis, And the horizontal cross-sectional area A3 of the second conductive type first semiconductor layer 126 are equal to each other.

On the other hand, in the case of the light emitting device 100B illustrated in FIG. 4, the horizontal cross-sectional area A1 of the second conductive type second semiconductor layer 140B on the two-dimensional plane formed by the X axis and the Z axis is smaller than the horizontal cross- 130A. ≪ / RTI > Except for this, since the light emitting device 100B shown in FIG. 4 is the same as the light emitting device 100A shown in FIG. 1, a duplicate description will be omitted.

5 shows a cross-sectional view of a light emitting device 100C according to another embodiment.

According to another embodiment, unlike the light emitting device 100A shown in FIG. 1, in the case of the light emitting device 100C illustrated in FIG. 5, the second conductivity type The horizontal sectional area A1 of the second semiconductor layer 140C and the horizontal sectional area A2 of the insertion layer 130B are smaller than the horizontal sectional area A3 of the first conductive semiconductor layer 126 of the second conductivity type. Except for this, since the light emitting device 100C shown in FIG. 5 is the same as the light emitting device 100A shown in FIG. 1, a duplicate description will be omitted.

6 shows the relationship between the ratio A2 / A1 of the horizontal cross-sectional area A2 of the voids 136A, 136B and 136C to the horizontal cross-sectional area A1 of the second conductive type second semiconductor layers 140A to 140C, FIG.

The larger the horizontal sectional area A2 of the voids 136A, 136B, and 136C on the two-dimensional plane formed by the X axis and the Z axis, the greater the amount of light emitted from the active layer 124 can be reflected in the + Y axis direction. However, when the horizontal cross-sectional area A2 of the voids 136A, 136B, and 136C is too large, the driving voltage for driving the light emitting elements 100A to 100C may rise.

The voids 136A, 136B, and 136C with respect to the horizontal cross-sectional area A1 of the second conductive type second semiconductor layers 140A to 140C on the two-dimensional plane formed by the X axis and the Z axis, The increase rate of the drive voltage for driving the light emitting devices 100A to 100C is less than 10% when the voids 136A, 136B, and 136C are not present (A2 = 0) when the ratio of the horizontal cross- Can be increased further. Further, if the ratio of A2 to A1 is less than 20%, the improvement in light extraction efficiency may be less than 5%. Thus, for example, the ratio of A2 to A1 (A2 / A1) may be 20% to 60%, but the embodiment is not limited thereto.

7 is a cross-sectional view of a light emitting device package 200 according to the embodiment.

The light emitting device package 200 illustrated in FIG. 7 includes a module substrate 210, a package body 220, an insulating portion 230, first and second wires 242 and 244, a light emitting device chip 250, Member (260).

The module substrate 210 may include not only a general printed circuit board (PCB) but also a metal core PCB (MCPCB), a flexible PCB and the like, and the embodiment is not limited thereto .

The package body 220 may be made of a material having electrical conductivity as well as reflective properties. If the light emitting device chip 250 emits light in the ultraviolet wavelength band, the package body 220 may be formed of an aluminum material to improve the heat dissipation characteristics and reflectivity, but the present invention is not limited thereto.

The package body 220 includes first and second body portions 220A and 220B electrically spaced from one another on the module substrate 210. [ As described above, when the first and second body portions 220A and 220B are made of an aluminum material having electrical conductivity, the insulation portion 230 may include a first body portion 220A and a second body portion 220B, To electrically isolate each other from each other.

The molding member 260 may be filled with the cavity 246 formed by the first and second body portions 220A and 220B to surround the light emitting device chip 250. [ At this time, the molding member 260 may include a phosphor to change the wavelength of light emitted from the light emitting device chip 250.

The cross-sectional view of the light emitting device package 200 illustrated in FIG. 7 is only one example for facilitating the understanding of the embodiment, and the embodiment is not limited thereto. That is, according to another embodiment, the cavity 246 is not formed, the light emitting device chip 250 is disposed on the upper surface of the flat package body 220, and the molding member 260 surrounds the light emitting device chip 250 Or may be disposed on top of the flat package body 220.

In the embodiment illustrated in FIG. 7, the light emitting device chip 250 is mounted on the bottom surface of the cavity 246, and can emit light in the ultraviolet wavelength band. Although the light emitting device chip 250 is illustrated as being disposed on the second body portion 220B, the embodiment is not limited thereto. That is, the light emitting device chip 250 may be disposed on the first body 220A instead of the second body 220B. The light emitting device chip 250 may have a flip bonding structure.

Hereinafter, the configuration of the light emitting device chip 250 will be described with reference to the accompanying drawings.

8 is an enlarged cross-sectional view of the portion 'B' shown in FIG.

Although the light emitting device chip 250 illustrated in FIG. 8 is shown as including the light emitting device 100A shown in FIG. 1, the light emitting devices 100B and 100C illustrated in FIG. 4 or FIG. But may be disposed on the submount 160 as shown.

The light emitting device chip 250 having a flip-bonding type structure includes the light emitting device 100A, the submount 160, the protective layer 162, the first and second metal layers (or electrode pads) 164A, 164B, and first and second bump portions 166A, 166B.

The buffer layer 112, the light emitting structure 120, the electron blocking layer 128, the insertion layer 130A, the second conductive type second semiconductor layer 140A, and the second conductive type semiconductor layer 140A included in the light emitting device 100A 1 and the second electrodes 152 and 154 are the same as described above, overlapping explanations are omitted here.

The submount 160 shown in FIG. 8 may be formed of a semiconductor substrate made of, for example, AlN, BN, SiC, GaN, GaAs, Si, It is possible. In addition, a device for preventing electrostatic discharge (ESD) in the form of a Zener diode may be included in the submount 160. [

The first and second metal layers 164A and 164B are disposed on the submount 160 in a horizontal direction. The first and second bump portions 166A and 166B are disposed between the first and second metal layers 164A and 164B and the first and second electrodes 152 and 154, respectively.

The first electrode 152 is connected to the first metal layer 164A on the submount 160 via the first bump portion 166A and the second electrode 154 is connected to the submount 160B through the second bump portion 166B, Lt; RTI ID = 0.0 > 160B. ≪ / RTI >

The first and second wires 242 and 244 serve to electrically connect the package body 220 and the light emitting device chip 250. That is, the first metal layer 164A is electrically connected to the first body portion 220A through the first wire 242 and the second metal layer 164B is electrically connected to the second body portion 220B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 152 and the first bump portion 166A, and the first metal layer 164A and the first bump portion 166A are disposed between the first electrode 152 and the first bump portion 166A. A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate the position where the first bump portion 166A is to be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 154 and the second bump portion 166B, and a second upper bump metal layer (not shown) is disposed between the second metal layer 164B and the second bump portion 166B. A lower bump metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate the position where the second bump portion 166B is located.

If the submount 160 is formed of a material having electrical conductivity such as Si, a protective layer (not shown) may be formed between the first and second metal layers 164A and 164B and the submount 160 as illustrated in FIG. 8 162 may be further disposed. Here, the protective layer 162 may be formed of an insulating material.

8, the light emitted from the active layer 124 is transmitted through the first conductive semiconductor layer 122, the buffer layer 112, the substrate 110, And is emitted through the first electrode 152. Accordingly, the first conductive semiconductor layer 122, the buffer layer 112, the substrate 110, and the first electrode 152 may be made of a light-transmitting material.

Light emitted from the active layers 124 of the light emitting devices 100A to 100C and the light emitting device package 200 according to the above-described embodiment is emitted in the + Y axis direction. In this case, when the light emitted from the active layer 124 travels in the -Y-axis direction and is lost, the light extraction efficiency deteriorates. However, as described above, when the inserting layers 130A and 130B are disposed between the second conductive type first semiconductor layer 126 and the second conductive type second semiconductor layers 140A to 140C, the active layer 124, The light emitted in the Y-axis direction is reflected in the + Y-axis direction by the voids 136A, 136B, and 136C of the insertion layers 130A and 130B, and the light extraction efficiency can be improved.

For this purpose, the second conductive type first semiconductor layer 126 may also be made of a material having a light-transmitting property.

Hereinafter, a manufacturing method according to an embodiment of the light emitting device chip 250 illustrated in FIG. 8 will be described as follows. However, the light emitting device chip 250 is not limited to the manufacturing method shown in Figs. 9A to 9E, and may be manufactured by various other manufacturing methods.

9A to 9E are cross-sectional views illustrating a method of manufacturing the light emitting device chip 250 according to the embodiment.

Referring to FIG. 9A, a buffer layer 112 is formed on a substrate 110. The substrate 110 may be formed of a light-transmitting material. For example, the substrate 110 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

The buffer layer 112 may be formed of AlN or an undoped nitride, but is not limited thereto. The buffer layer 112 may be omitted depending on the type of the substrate 110 and the type of the light emitting structure 120.

Thereafter, the light emitting structure 120 is formed on the buffer layer 112. In other words, the first conductivity type semiconductor layer 122 is formed on the buffer layer 112. The first conductive semiconductor layer 122 may be formed of a semiconductor compound on the buffer layer 112. For example, the first conductivity type semiconductor layer 122 may have a composition formula of Al _u In _v Ga _(1-uv) N (0? U? 1, 0? V? 1, 0? U + Semiconductor material, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductivity type semiconductor layer 122 may be formed of InAlGaN having less absorption of light in the ultraviolet wavelength band than GaN and / or the second conductivity type semiconductor layer 122. In this case, since the active layer 124 emits ultraviolet light, particularly deep ultraviolet (DUV) AlGaN. ≪ / RTI >

Thereafter, the active layer 124 is formed on the first conductive semiconductor layer 122. InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs and InGaN / GaN, GaP (InGaP) / AlGaP, but the present invention is not limited thereto.

Thereafter, an electron blocking layer 128 is formed on the active layer 124. The electron blocking layer 128 may be formed of a nitride semiconductor having a larger energy band gap than the second conductive type first semiconductor layer 126. For example, the electron blocking layer 128 may be formed by at least one of GaN and InAlN. In some cases, the electron blocking layer 128 may be omitted.

Thereafter, the second conductive type semiconductor layer 126 is formed on the electron blocking layer 128. The second conductive type first semiconductor layer 126 may be formed of a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a second conductive type dopant. For example, the second conductivity type first semiconductor layer 126 has a compositional formula of _{In w Al x Ga 1 -w- x} N (0≤w≤1, 0≤x≤1, 0≤w + x≤1) Semiconductor material or AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP.

Referring to FIG. 9B, an insulator layer 130A is formed on the first semiconductor layer 126 of the second conductivity type. Specifically, the second conductive type third semiconductor layer 132A is formed on the second conductive type first semiconductor layer 126. [ For example, the second conductivity type third semiconductor layer (132A) is GaN or Al _z Ga _{1 - z} N may be formed by.

Using the difference in lattice constant, the second conductive type third semiconductor layer 132A made of GaN is grown in the form of an island on the second conductive type first semiconductor layer 126 formed of Al _x Ga _{1 - x} N, .

Then, the second conductive type fourth semiconductor layer 134A is formed on the second conductive type third semiconductor layer 132A. For example, the second conductive type fourth semiconductor layer 134A may be formed of Al _y Ga _{1 - y} N.

If the second conductive type third semiconductor layer 132A is formed of GaN and the second conductive type first semiconductor layer 126 is formed of Al _x Ga _{1 - x} N, Here, x may be 0.3 or more, and _y may be 0.1 to 0.3 in Al _y Ga _{1 - y} N forming the second conductive type fourth semiconductor layer 134A.

Alternatively, the second conductive type third semiconductor layer 132A may be formed of Al _z Ga _{1 - z} N, and the second conductive type first semiconductor layer 126 may be formed of Al _x Ga _{1 - x} N have. Here, x is not less than 0.3, y is 0.1 to 0.3 in Al _y Ga _{1 - y} N forming the second conductive type fourth semiconductor layer 134A, and z may be 0.1 or more.

At this time, as shown in FIG. 9B, the insertion layer 130A is formed so that the void 136A extends through the second conductive type third semiconductor layer 132A and extends to the second conductive type fourth semiconductor layer 134A, Can be formed. Alternatively, the insertion layer 130A may be formed so that the void 136B penetrates the second and third conductive type semiconductor layers 132A and 134A as illustrated in FIG. 2A. Alternatively, as illustrated in FIG. 2B, the void 136C may be extended only through the second conductive type third semiconductor layer 132A to the bottom surface 134A-1 of the second conductive type fourth semiconductor layer 134A , And an insertion layer 130A may be formed.

Next, referring to FIG. 9C, a second conductive type second semiconductor layer 140A is formed on the interlayer 130A. The second conductive type second semiconductor layer 140A may be formed of GaN.

Thereafter, the second conductive semiconductor layer 122, the active layer 124, the second conductive semiconductor layer 126, the interlayer 130A, and the second conductive semiconductor layer 140A are etched using a mesa etching process The first conductive semiconductor layer 122 is exposed.

The first conductive semiconductor layer 122, the active layer 124 and the first, second, third, and fourth semiconductor layers 126, 140A, 132A, and 134A of the second conductivity type, A metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE) And a hydride vapor phase epitaxy (HVPE) method. However, the present invention is not limited thereto.

9D, a first electrode 152 is formed on the exposed first conductive type semiconductor layer 122, a second electrode 154 is formed on the second conductive type second semiconductor layer 140A, ).

Referring to FIG. 9E, first and second metal layers 164A and 164B are formed on submount 160 in a separate process during the process illustrated in FIGS. 9A-9D. If the submount 160 is made of Si, a protective layer 162 may be further formed on the submount 160 before the first and second metal layers 164A and 164B are formed. In this case, the first and second metal layers 164A and 164B are formed on the protective layer 162 after the protective layer 162 is formed.

On the other hand, a lapping and a polishing process are performed on the result shown in FIG. 9D. Thereafter, the substrate 110 is rotated so as to be arranged on the top side, and then bonded to the resultant shown in FIG. 9E. 8, the first electrode 152 and the first metal layer 164A are coupled by the first bump portion 166A and the second electrode 154 is connected by the second bump portion 166B. And the second metal layer 164B are combined with each other to complete the light emitting device chip 250 shown in FIG.

A plurality of light emitting device packages according to other embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting unit may include a backlight unit, a lighting unit, a pointing device, a lamp, a streetlight, .

10 is a perspective view of the air sterilizer 500 according to the embodiment.

10, the air sterilizing apparatus 500 includes a light emitting module 510 mounted on one surface of a casing 501, diffusive reflection members 530a and 530b for diffusing the emitted light in the deep ultraviolet wavelength band, And a power supply unit 520 for supplying available power required by the light emitting module unit 510.

First, the casing 501 may have a rectangular structure and may be formed as a unitary or compact structure including the light emitting module unit 510, the diffuse reflection members 530a and 530b, and the power supply unit 520. [ In addition, the casing 501 may have a material and shape effective for discharging heat generated inside the air sterilizing apparatus 500 to the outside. For example, the material of the casing 501 may be made of any one of Al, Cu, and alloys thereof. Therefore, the heat transfer efficiency with the outside air of the casing 501 is improved, and the heat radiation characteristic can be improved.

Alternatively, the casing 501 may have a unique outer surface shape. For example, the casing 501 may have an outer surface shape that is formed by, for example, corrugation or a mesh or an irregular irregular shape. Therefore, the heat transfer efficiency with the outside air of the casing 501 is further improved, and the heat radiation characteristic can be improved.

On the other hand, attachment plates 550 may be disposed at both ends of the casing 501. The attachment plate 550 means a member of a bracket function used to lock and fix the casing 501 to the entire equipment as illustrated in Fig. The attachment plate 550 may protrude from both ends of the casing 501 in one direction. Here, one direction may be an inner direction of the casing 501 in which deep ultraviolet rays are emitted and diffuse reflection occurs.

Thus, the attachment plate 550 provided on both ends from the casing 501 provides a fixing area with the entire facility apparatus, so that the casing 501 can be more effectively fixedly installed.

The attachment plate 550 may take any of the form of a screw fastening means, a rivet fastening means, an adhesive means, and an attaching / detaching means, and the manner of these various fastening means is obvious at the level of those skilled in the art. do.

On the other hand, the light emitting module unit 510 is disposed on one surface of the casing 501. The light emitting module unit 510 emits ultraviolet rays to sterilize microorganisms in the air. The light emitting module unit 510 includes a module substrate 512 and a plurality of light emitting device packages 200 mounted on the module substrate 512. Here, the light emitting device package 200 and the module substrate 512 correspond to the light emitting device package 200 and the module substrate 210 illustrated in FIG. 7, respectively.

The module substrate 512 may be a PCB including a circuit pattern (not shown) arranged in a single row along the inner surface of the casing 501 and may include not only a general PCB but also a metal core PCB (MCPCB) Flexible PCB, and the like, but the present invention is not limited thereto.

Next, the diffuse reflection members 530a and 530b refer to a reflection plate type member formed to forcibly diffuse ultraviolet rays emitted from the light emitting module unit 510 described above. The front surface shape and the arrangement shape of the diffusely reflecting reflection members 530a and 530b may have various shapes. (For example, a radius of curvature) of the diffusive reflection members 530a and 530b is slightly changed, the diffused deep ultraviolet rays are irradiated to overlap with each other to increase the irradiation intensity, .

The power supply unit 520 receives power and supplies necessary power to the light emitting module unit 510. The power supply unit 520 may be disposed in the casing 501 described above. 10, the power supply unit 520 may be disposed on the inner wall side of the spacing space between the diffusive reflective members 530a and 530b and the light emitting module unit 510. [ A power connection unit 540 for electrically connecting the external power supply to the power supply unit 520 may be further disposed.

10, the power connection 540 may be in the form of a surface, but may have the form of a socket or cable slot through which an external power cable (not shown) may be electrically connected. Also, the power cable has a flexible extension structure and can be easily connected to an external power source.

11 shows a head lamp 900 including the light emitting device package according to the embodiment.

11, the headlamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904. [

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a module substrate (not shown). At this time, the light emitting device package may be as shown in FIG.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, toward the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904 and reflects off or reflects a part of the light reflected by the reflector 902 toward the lens 904 to form a light distribution pattern desired by the designer. The one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights from each other.

The light emitted from the light emitting module 901 can be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 and directed toward the front of the vehicle body. The lens 904 can refract the light reflected by the reflector 902 forward.

12 shows a lighting device 1000 including a light emitting device chip or a light emitting device package according to the embodiment.

12, the lighting apparatus 1000 may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800 have. In addition, the illumination device 1000 according to the embodiment may further include at least one of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting device package illustrated in FIG. 7 or the light emitting device chip 250 illustrated in FIG.

The cover 1100 may be in the form of a bulb or a hemisphere, and may be hollow in shape and partially open. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 can be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. [ This is because light from the light source module 1200 is sufficiently scattered and diffused to be emitted to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but it is not limited thereto and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400 and the heat generated from the light source module 1200 may be conducted to the heat discharger 1400. The light source module 1200 may include a light source 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the heat discharging body 1400 and has a plurality of light source portions 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or align with the substrate and connector 1250 of the light source 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may be reflected by the inner surface of the cover 1100 and may reflect the light returning toward the light source module 1200 toward the cover 1100 again. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be formed of an insulating material so as to prevent an electrical short circuit between the connection plate 1230 and the heat discharger 1400. The heat dissipation member 1400 can dissipate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 can be hermetically sealed. The holder 1500 may have a guide protrusion 1510 and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 penetrates.

The power supply unit 1600 processes or converts electrical signals provided from the outside and provides the electrical signals to the light source module 1200. The power supply unit 1600 may be housed in the receiving groove 1719 of the inner case 1700 and may be sealed inside the inner case 1700 by the holder 1500. [ The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide portion 1630 may have a shape protruding outward from one side of the base 1650. The guide portion 1630 can be inserted into the holder 1500. A plurality of components can be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge protection device, but are not limited thereto.

The extension 1670 may have a shape protruding outward from the other side of the base 1650. The extension portion 1670 can be inserted into the connection portion 1750 of the inner case 1700 and can receive an external electrical signal. For example, the extension portion 1670 may be equal to or less than the width of the connection portion 1750 of the inner case 1700. Each of the "+ wire" and the "wire" may be electrically connected to the extension portion 1670 and the other end of the "wire" and the "wire" may be electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply part 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply providing part 1600 can be fixed inside the inner case 1700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100A, 100B, 100C: Light emitting device 110:
112: buffer layer 120: light emitting structure
122: first conductivity type semiconductor layer 124: active layer
126: second conductive type first semiconductor layer 128: electron blocking layer
130A, 130B: inserting layer 132A, 132B: second conductive type third semiconductor layer
134A and 134B: a second conductive type fourth semiconductor layer
136A, 136B, 136C: void
140A, 140B, and 140C: a second conductive type second semiconductor layer
152: first electrode 154: second electrode
160: Sub mount 162: Protective layer
164A and 164B: metal layers 166A and 166B:
200: light emitting device package 210: module substrate
220: package body 230: insulating part
242, 244: wire 246: cavity
250: light emitting device chip 260: molding member
500: air sterilizer 501: casing
510: light emitting module section 530a, 530b: diffuse reflection member
520: Power supply unit 800: Display device
810: bottom cover 820: reflector
830, 835, 901: light emitting module 840: light guide plate
850, 860: prism sheet 870: display panel
872: Image signal output circuit 880: Color filter
900: Headlamp 902: Reflector
903: Shade 904: Lens
1000: illumination device 1100: cover
1200: light source module 1400: heat sink
1600: power supply unit 1700: inner case
1800: Socket

Claims (13)

Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the substrate;
A first electrode on the first conductive type semiconductor layer exposed by mesa etching;
A second conductive type second semiconductor layer on the second conductive type first semiconductor layer;
An insertion layer disposed between the second conductive type first semiconductor layer and the second conductive type second semiconductor layer and having voids; And
And a second electrode on the second conductive type second semiconductor layer. 2. The method of claim 1,
A second conductive type third semiconductor layer disposed between the second conductive type first semiconductor layer and the second conductive type second semiconductor layer; And
And a second conductive type fourth semiconductor layer disposed between the second conductive type third semiconductor layer and the second conductive type second semiconductor layer,
And the void extends through the second conductive type third semiconductor layer to extend to the second conductive type fourth semiconductor layer. The light emitting device of claim 2, wherein the second conductive type third semiconductor layer comprises GaN. The light emitting device of claim 2, wherein the second conductive type third semiconductor layer comprises Al _z Ga _{1 - z} N. The light emitting device according to claim 3 or 4, wherein the second conductive type fourth semiconductor layer comprises Al _y Ga _{1 - y} N. The method of claim 5, wherein the second conductive type third semiconductor layer comprises GaN, the second conductive type first semiconductor layer comprises Al _x Ga _{1 - x} N, x is greater than or equal to 0.3, y is 0.1 to 0.3. The method of claim 5, wherein the second conductive type third semiconductor layer comprises Al _z Ga _{1 - z} N, the second conductive type first semiconductor layer comprises Al _x Ga _{1 - x} N, x is 0.3 or more, y is 0.1 to 0.3, and z is 0.1 or more. The light emitting device according to claim 1, wherein a horizontal cross-sectional area of the second conductive type second semiconductor layer is smaller than a horizontal cross-sectional area of the insertion layer. The light emitting device according to claim 1, wherein a horizontal cross-sectional area of each of the second conductive type second semiconductor layer and the insertion layer is equal to a horizontal cross-sectional area of the second conductive type first semiconductor layer. The light emitting device according to claim 1, wherein a horizontal cross-sectional area of each of the second conductive type second semiconductor layer and the interlayer is smaller than a horizontal cross-sectional area of the second conductive type first semiconductor layer. The light emitting device according to claim 1, wherein a width of an upper side of the void facing the second conductive type second semiconductor layer is smaller than a width of a lower side facing the second conductive type first semiconductor layer. The light emitting device according to claim 1, wherein the ratio of the horizontal cross-sectional area of the void to the horizontal cross-sectional area of the second conductive type second semiconductor layer is 20% to 60%. Submount;
The light emitting element according to claim 1 disposed on the submount;
First and second metal layers disposed horizontally spaced apart from each other on the submount; And
And first and second bump portions disposed between the first and second metal layers and between the first and second electrodes, respectively.

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