CN205159366U - Light -emitting component - Google Patents
Light -emitting component Download PDFInfo
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- CN205159366U CN205159366U CN201520893395.2U CN201520893395U CN205159366U CN 205159366 U CN205159366 U CN 205159366U CN 201520893395 U CN201520893395 U CN 201520893395U CN 205159366 U CN205159366 U CN 205159366U
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The utility model discloses a light -emitting component, it contains: the light emitting structure body, a contact electrode and the 2nd contact electrode lie in the light emitting structure body, respectively with a conductive semiconductor layer and the 2nd conductive semiconductor layer ohmic contact, first insulation portion and second insulation portion cover a contact electrode and the 2nd contact electrode partly, first electrode and second electrode lie in the light emitting structure body, are electrically connected to a contact electrode and the 2nd contact electrode respectively, third insulation portion, its side that covers first electrode and second electrode, the articulamentum, it is located first electrode, second electrode and third insulation portion, and first weld pad electrode and second weld pad electrode, be located the articulamentum. The utility model provides a light -emitting component's radiating efficiency improves to can improve reliability and life -span.
Description
Technical field
The utility model relates to a kind of light-emitting component, particularly relates to a kind of light-emitting component comprising the electrode of thermal characteristics, electrical characteristics and the characteristics of luminescence that can improve light-emitting component.
Background technology
Recently, increase along with to the requirement of small-sized and high-power light-emitting component, to the increase in demand of large area flip-chip (flipchip) the type light-emitting component of radiating efficiency excellence.The electrode of flip chip type light-emitting element directly joins secondary substrate to, and in addition, in flip chip type light-emitting element, do not utilize the wire (wire) supplying external power source, therefore compared with horizontal light-emitting component, radiating efficiency is very high.Therefore, even if apply high-density current, also effectively heat can be transmitted, so flip chip type light-emitting element is suitable for use as high-power light emitting source to secondary substrate-side.
In addition, in order to realize the miniaturization of light-emitting component, to the increase in demand of wafer-level package body (ChipScalePackage), described wafer-level package body omits light-emitting element package (packaging), to the processing procedure of shell (housing) especially etc., light-emitting component itself is used as packaging body (package).The electrode of flip chip type light-emitting element can play the function of the lead-in wire (lead) being similar to packaging body, so also usefully can apply flip chip type light-emitting element in this wafer-level package body.
When the element of this wafer-level package volume morphing is used as lighting device with high power, highdensity electric current is applied to described wafer-level package body.In the case, when driving high-power die level encapsulation body, there is electric current to the phenomenon in the set of regions being formed with N-type electrode.Therefore, the luminescence of described wafer-level package body focuses on the region being formed with N-type electrode, and in addition, the heating of this part also becomes serious.As mentioned above, the luminous and heating on the specific region centrality ground of light-emitting component, thus non-uniform light and the radiating efficiency of light-emitting component decline and cause harmful effect to the reliability of light-emitting component and life-span.
Utility model content
[problem of utility model for solving]
For the problem solved, the utility model is that providing a kind of has the uniform characteristics of luminescence and the light-emitting component of radiating efficiency excellence on the whole.
[solving the means of problem]
The light-emitting component of one side of the present utility model comprises: ray structure body, and it comprises the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and the active layer between described first conductive-type semiconductor layer and the second conductive-type semiconductor layer; First contact electrode (contactelectrode) and the second contact electrode, be positioned on described ray structure body, respectively with described first conductive-type semiconductor layer and the second conductive-type semiconductor layer ohmic contact (ohmiccontact); First insulation division and the second insulation division, cover described first contact electrode and the second contact electrode partly; First electrode and the second electrode, be positioned on described ray structure body, is electrically connected to described first contact electrode and the second contact electrode respectively; 3rd insulation division, it covers the side of described first electrode and the second electrode; Articulamentum, it is positioned on described first electrode, the second electrode and the 3rd insulation division; And first pad electrode (padelectrode) and the second pad electrode, be positioned on described articulamentum; And described first pad electrode and the second pad electrode are electrically connected to described first electrode and the second electrode respectively by described articulamentum, the horizontal area of described first pad electrode is less than the horizontal area of described first electrode, and the horizontal area of described second pad electrode is greater than the horizontal area of described second electrode.
Thus, the radiating efficiency of light-emitting component improves, thus can improve reliability and life-span, can provide the light-emitting component with the uniform characteristics of luminescence.
Described first electrode can be positioned in the part of described first contact electrode and described first conductive-type semiconductor layer ohmic contact.
In addition, the part of described first contact electrode and described first conductive-type semiconductor layer ohmic contact can not be positioned at the below of described second electrode.
Described first contact electrode can comprise and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact, and described first electrode all can contact with described multiple ohmic contact regions of described first contact electrode.
In addition, described first contact electrode can comprise and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact, in described multiple ohmic contact regions only a part can with described first electrode contact.
And then described light-emitting component also can comprise: the first wiring layer, it is positioned at the below of described first electrode; And second wiring layer, it is positioned at the below of described second electrode; And a part for described first wiring layer can contact with described first contact electrode, a part for described second wiring layer can contact with described second contact electrode.
A part for described second insulation division can between described first wiring layer and described first contact electrode.
The horizontal section area of described first electrode can be described first electrode and the second electrode horizontal section area sum separately more than 0.8 times and is less than 1 times.
In addition, the horizontal area of described first pad electrode can be identical with the horizontal area of described second pad electrode.
Described articulamentum can comprise insulating material layer; First articulamentum, described first electrode is electrically connected with described first pad electrode by it, and through described insulating material layer; And second articulamentum, described second electrode is electrically connected with described second pad electrode by it, and through described insulating material layer.
Described second electrode can be formed as multiple, and described second electrode can be electrically connected to described second pad electrode.
And then described first contact electrode can comprise and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact, the part in described multiple ohmic contact regions is configurable between described second electrode.
Described first electrode and the second electrode can comprise metallic and Jie respectively and put nonmetal character material between described metallic.
And then described metallic and described nonmetal character material can be formed as metallic sintered body form.
Described first electrode and the second electrode can comprise inclined side respectively, the side that the tangential tilt degree that described inclined side can comprise the first electrode and the second electrode vertical section separately changes.
In addition, described first electrode and the second electrode can comprise the metallic of 80 to 98wt% respectively.
In several embodiments, the described ray structure body of described light-emitting component also can comprise described active layer and described second conductive-type semiconductor layer are exposed described first conductive-type semiconductor layer partly region by removing partly, described first contact electrode by expose partly described first conductive-type semiconductor layer region and with described first conductive-type semiconductor layer ohmic contact.
In addition, the region of exposing described first conductive-type semiconductor layer partly can be formed as multiple hole (hole) form.
And then, described second contact electrode can be positioned on described second conductive-type semiconductor layer, described first insulation division covers described second contact electrode and ray structure body, the first peristome and the second peristome can be comprised, described first peristome and the second peristome make a part for the part in the region of exposing described first conductive-type semiconductor layer and described second contact electrode expose respectively, described first contact electrode covers described first insulation division at least partly, contact with described first conductive-type semiconductor layer by described first peristome, described second insulation division covers described first contact electrode partly, the 3rd peristome and the 4th peristome can be comprised, described 3rd peristome makes described first contact electrode expose partly, the position of described 4th peristome and described second peristome configures accordingly and a part for described second contact electrode is exposed.
Described first electrode contacts with described first contact electrode by described 3rd peristome, and described second electrode contacts with described second contact electrode by described 4th peristome, and described multiple Kong Junke is positioned at the below in described 3rd peristome region.
[utility model effect]
According to the utility model, comprise first electrode with the horizontal section area being relatively greater than the second electrode, the radiating efficiency of light-emitting component improves thus, thus can improve reliability and life-span.In addition, the ratio in a kind of first electrode region occupied in light-emitting component can be provided to increase and light-emitting component has the light-emitting component of the uniform characteristics of luminescence on the whole.
Accompanying drawing explanation
Fig. 1 (a), Fig. 1 (b) and Fig. 2 are vertical view and the profile of the light-emitting component that an embodiment of the present utility model is described.
Fig. 3 is the profile of the light-emitting component that another embodiment of the present utility model is described.
Fig. 4 (a), Fig. 4 (b) and Fig. 5 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
Fig. 6 (a), Fig. 6 (b) and Fig. 7 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
Fig. 8 (a), Fig. 8 (b) and Fig. 9 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
Embodiment
Below, with reference to accompanying drawing, in detail embodiment of the present utility model is described.Following introduced embodiment provides to pass on thought of the present utility model fully to the utility model person of an ordinary skill in the technical field the embodiment making example.Therefore, the utility model is not limited to following illustrated embodiment, also can be embodied in other forms.Further, in the drawings, for convenience of explanation, the width, length, thickness etc. that represent inscape can also be exaggerated.In addition, when be recited as an inscape be in another inscape " top " or " on ", not only comprise each several part be in another part " positive top " or " directly over " situation, but also be included in be situated between each inscape and another inscape and be equipped with the situation of another inscape.In entire description, identical reference marks represents identical inscape.
Fig. 1 (a), Fig. 1 (b) and Fig. 2 are vertical view and the profile of the light-emitting component that an embodiment of the present utility model is described.
Fig. 1 (a) is the vertical view of light-emitting component 100a, Fig. 1 (b) is the vertical view that the position of hole 120h and the position of the 3rd peristome 153a and the 4th peristome 153b are described, Fig. 2 is the profile of the section representing the region corresponding with the A-A line of Fig. 1 (a) and Fig. 1 (b).
With reference to Fig. 1 (a), Fig. 1 (b) and Fig. 2, light-emitting component 100a can comprise: ray structure body 120, and it comprises the first conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125; First contact electrode 130; Second contact electrode 140; First insulation division 151 and the second insulation division 153; First electrode 161; Second electrode 163; And the 3rd insulation division 170.And then light-emitting component 100a also can comprise the first pad electrode and the second pad electrode (not shown), growth substrate (not shown) and wavelength conversion section (not shown).
Ray structure body 120 can comprise: the first conductive-type semiconductor layer 121; Active layer 123, it is positioned on the first conductive-type semiconductor layer 121; And second conductive-type semiconductor layer 125, it is positioned on active layer 123.First conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125 can comprise Group III-V compound semiconductor, such as, can comprise the nitride-based semiconductor as (Al, Ga, In) N.First conductive-type semiconductor layer 121 can comprise N-shaped impurity (such as, Si), and the second conductive-type semiconductor layer 125 can comprise p-type impurity (such as, Mg).In addition, also can be contrary.Active layer 123 can comprise multi-quantum pit structure (MQW).
In addition, ray structure body 120 can comprise the second conductive-type semiconductor layer 125 and active layer 123 are exposed the first conductive-type semiconductor layer 121 partly region by removing partly.Such as, as shown in the figure, ray structure body 120 can comprise at least one hole 120h, through second conductive-type semiconductor layer 125 of described hole 120h and active layer 123 and the first conductive-type semiconductor layer 121 is exposed.
Hole 120h can be formed as multiple, and multiple hole 120h can roughly systematicness ground configuration.Such as, as shown in Fig. 1 (a), Fig. 1 (b), hole 120h can being that the mode of fixed pattern (pattern) configures according to fixed intervals.Across and the overall and systematicness of ray structure body configure hole 120h, thus when driving light-emitting component 100a, electric current can disperse in the horizontal direction equably.But the utility model is not limited thereto, the configuration of hole 120h and number can realize various deformation.
In addition, the form exposing the first conductive-type semiconductor layer 121 is not limited to hole 120h form.Such as, the region of exposing the first conductive-type semiconductor layer 121 can be formed as the form etc. that line (line) form, hole and line are composited.When the region of exposing the first conductive-type semiconductor layer 121 is formed as multiple line morphology, ray structure body 120 also can comprise more than one table top (mesa), described table top is formed along described line, and comprises active layer 123 and the second conductive-type semiconductor layer 125.Therefore, in the present embodiment, the utility model is described for benchmark with the ray structure body 120 comprising multiple hole 120h, but the utility model is not limited thereto.
Ray structure body 120 also can comprise the rough surface 120R being formed in its lower surface.Rough surface 120R can utilize at least one method in Wet-type etching, dry-etching, chemical etching to be formed, Optical Electro-Chemistry (Photoelectrochemical, PEC) such as can be utilized to etch or utilize formation rough surface 120R such as comprising the engraving method of the etching solution of KOH and NaOH.Can comprise because forming rough surface 120R the surface being formed in the first conductive-type semiconductor layer 121 μm to the protuberance of nm level and/or depressed part.By forming rough surface on the surface of ray structure body 120, the extraction efficiency of light-emitting component can be improved.
In addition, ray structure body 120 also can comprise the growth substrate (not shown) of the below being positioned at the first conductive-type semiconductor layer 121.As long as growth substrate is the substrate that ray structure body 120 can be made to grow up, then indefinite.Such as, described growth substrate can be sapphire (sapphire) substrate, carborundum (siliconcarbide) substrate, silicon (silicon) substrate, gallium nitride (galliumnitride) substrate, aluminium nitride (aluminiumnitride) substrate etc.This growth substrate can utilize known technology to be separated from ray structure body 120 and remove.
Second contact electrode 140 is positioned on the second conductive-type semiconductor layer 125.Second contact electrode 140 covers the upper surface of the second conductive-type semiconductor layer 125 at least partly, can with the second conductive-type semiconductor layer 125 ohmic contact.In addition, the second contact electrode 140 can configure in the mode of the upper surface entirety covering the second conductive-type semiconductor layer 125.That is, can be formed as follows: the remaining area except the position of the porose 120h of formation except ray structure body 120, covers the upper surface of the second conductive-type semiconductor layer 125 with monomer.Thus, can electric current be supplied equably to ray structure body 120 entirety and improve current dissipation efficiency.
But the utility model is not limited thereto, also can be the second contact electrode 140 and do not form as one, and on the upper surface of the second conductive-type semiconductor layer 125, configure spaced multiple units reflection electrode layer.In the case, described unit reflection electrode layer is electrically connected to each other by specific connecting portion.
Second contact electrode 140 can comprise can with the material of the second conductive-type semiconductor layer 125 ohmic contact, such as can comprise metallics and/or electroconductive oxide.
When the second contact electrode 140 comprises metallics, the second contact electrode 140 can comprise reflector and cover the coating (coverlayer) in described reflector.As mentioned above, the second contact electrode 140 and the second conductive-type semiconductor layer 125 ohmic contact, can play the function of reverberation simultaneously.Therefore, described reflector has higher reflectance, and can comprise and can form the metal of ohmic contact with the second conductive-type semiconductor layer 125.Such as, described reflector can comprise at least one in Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag and Au.In addition, described reflector can comprise single or multiple lift.
Described coating can prevent the phase counterdiffusion between described reflector with other materials, and other outside materials can be prevented to be diffused into described reflector and to destroy described reflector.Therefore, described coating can be formed in the mode of the lower surface and side that cover described reflector.Described coating together can be electrically connected with the second conductive-type semiconductor layer 125 with described reflector, so can together play electrode effect with described reflector.Described coating such as can comprise Au, Ni, Ti, Cr etc., also can comprise single or multiple lift.
On the other hand, when the second contact electrode 140 comprises electroconductive oxide, described electroconductive oxide can be tin indium oxide (IndiumTinOxides, ITO), zinc oxide (ZincOxid, ZnO), aluminum zinc oxide (AluminumZincOxide, AZO), indium zinc oxide (IndiumZincOxide, IZO) etc.When the second contact electrode 140 comprises electroconductive oxide, compared with the metallic situation of bag, the upper surface of second conductive-type semiconductor layer 125 in wider region can be coated to.That is, when the second contact electrode 140 is formed by electroconductive oxide, can be formed relatively shortlyer from the top edge of hole 120h to the second contact electrode 140 separated by a distance.In the case, the beeline of part to the part that the first contact electrode 130 contacts with the first conductive-type semiconductor layer 121 contacted with the second conductive-type semiconductor layer 125 from the second contact electrode 140 can become shorter, relatively so can reduce the forward voltage (V of light-emitting component 100a
f).
First insulation division 151 and the second insulation division 153 can cover the first contact electrode 130 and the second contact electrode 140 partly.Below, first the first insulation division 151 is described, afterwards the content relevant to the second insulation division 153 is described.
First insulation division 151 can cover upper surface and second contact electrode 140 of ray structure body 120 partly.In addition, the first insulation division 151 covers the side of multiple hole 120h, but first conductive-type semiconductor layer 121 that hole 120h can be made to expose exposes partly.
And then the first insulation division 151 also can cover the side at least partially of ray structure body 120.First insulation division 151 covers the degree of the side of ray structure body 120 can according to having chipless unit monomers (isolation) and different in the manufacture process of light-emitting component.Namely, as the present embodiment, first insulation division 151 can also be formed in the mode of the upper surface only covering ray structure body 120, in the manufacture process of light-emitting component 100a, when forming first insulation division 151 after wafer (wafer) monomer is changed into chip unit, till the first insulation division 151 can being covered to the side of ray structure body 120.
First insulation division 151 can comprise: the first peristome, and it is positioned at the part corresponding with multiple hole 120h; And second peristome, it makes a part for the second contact electrode 140 expose.Expose the first conductive-type semiconductor layer 121 partly by the first peristome and hole 120h, expose the second contact electrode 140 partly by the second peristome.
Now, the first peristome and the second peristome can configure in the mode in fixed pattern.Such as, as shown in Fig. 1 (a), Fig. 1 (b), the second peristome can configure in the mode of the flank abutment with light-emitting component 100a, and the first peristome can be configured to systematicness the region not configuring described second peristome.
First insulation division 151 can comprise insulating properties material, such as, can comprise SiO
2, SiN
x, MgF
2deng.And then the first insulation division 151 can comprise multilayer, the distributed Bragg reflector (distributedbraggreflector) of the different metaboly ground lamination of refractive index also can be comprised.Particularly, when the second contact electrode 140 comprises electroconductive oxide, the first insulation division 151 comprises distributed Bragg reflector and can improve the luminous efficiency of light-emitting component 100a.
First contact electrode 130 can cover ray structure body 120 partly, by multiple hole 120h and the first peristome with the first conductive-type semiconductor layer 121 ohmic contact.Therefore, the first contact electrode 130 can comprise and directly contacts with the first conductive-type semiconductor layer 121 and realize the ohmic contact regions 131 of ohmic contact.When ray structure body 120 comprises multiple hole 120h, described ohmic contact regions 131 also can be formed as multiple with the number corresponding with the number of hole 120h.
First contact electrode 130 can be formed in the mode of other channel floor except a part of region covering the first insulation division 151.In addition, the first contact electrode 130 can also be formed in the mode till the side being covered to ray structure body 120.When the first contact electrode 130 is also formed into the side of ray structure body 120, the light that can send to side to top reflection from active layer 123 and increase the ratio of the light sent from the upper surface of light-emitting component 100a.On the other hand, the first contact electrode 130 is not formed into the region corresponding with the second peristome of the first insulation division 151, separates and insulate with the second contact electrode 140.
First contact electrode 130 is formed in the mode of the upper surface entirety covering ray structure body 120 except a part of region, can further improve current dissipation efficiency thus.In addition, can by the coating part do not covered by the second contact electrode 140 of the first contact electrode 130, therefore can more effectively reverberation and improve the luminous efficiency of light-emitting component 100a.
First contact electrode 130 and the first conductive-type semiconductor layer 121 ohmic contact, can play the effect of reverberation simultaneously.Therefore, the first contact electrode 130 can be made up of single or multiple lift, can comprise the high reflecting metal layer as Al layer.Described high reflecting metal layer can be formed on the following layers such as Ti, Cr or Ni.But the utility model is not limited thereto, the first contact electrode 130 also can comprise at least one in Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag and Au.
First contact electrode 130 passing hole 120h and with the first conductive-type semiconductor layer 121 ohmic contact, therefore in order to be formed and the electrode that the first conductive-type semiconductor layer 121 connects etc. and to be removed the region of active layer 123 identical with the region corresponding to multiple hole 120h.Therefore, can minimize in order to realize the first conductive-type semiconductor layer 121 with the region of the ohmic contact of metal level, the light-emitting component that the area of light-emitting zone is relatively large relative to the ratio of the horizontal area of whole ray structure body can be provided.
Second insulation division 153 can cover the first contact electrode 130 partly.In addition, the second insulation division 153 can comprise: the 3rd peristome 153a, and it makes the first contact electrode 130 expose partly; And the 4th peristome 153b, it makes the second contact electrode 140 expose partly.Now, the 4th peristome 153b can be formed into the position corresponding with the second peristome.
3rd peristome 153a and the 4th peristome 153b can form more than one respectively.In addition, as shown in Fig. 1 (b), the mode that the 4th peristome 153b can be adjacent with the side corner with light-emitting component 100a is located, and the 3rd peristome 153a can be formed in the mode making the position of the multiple hole 120h be formed at least partially expose.And then, the 3rd peristome 153a can with make to be formed the mode exposed of the position of porose 120h formed.Thus, ohmic contact regions 131 is exposed by the 3rd peristome 153a.
Second insulation division 153 can comprise insulating properties material, such as, can comprise SiO
2, SiN
x, MgF
2.And then the second insulation division 153 can comprise multilayer, the distributed Bragg reflector of the different metaboly ground lamination of refractive index also can be comprised.
First electrode 161 and the second electrode 163 can be positioned on ray structure body 120, and the first electrode 161 and the second electrode 163 can be electrically connected to the first contact electrode 130 and the second contact electrode 140 respectively.Particularly, the first electrode 161 and the second electrode 163 can directly contact with the first contact electrode 130 and the second contact electrode 140 and realize being electrically connected respectively.
In addition, hole 120h can be positioned at the below of the first electrode 161 at least partially, and then, porose 120h can be positioned at the below of the first electrode 161.Therefore, the ohmic contact regions 131 of the first contact electrode 130 can be situated between and put between the first electrode 161 and the first conductive-type semiconductor layer 121, and in addition, all ohmic contact regions 131 directly can contact with the first electrode 161.
On the other hand, hole 120h can not be positioned at the below of the second electrode 163.That is, the part of the first contact electrode 130 and the first conductive-type semiconductor layer 121 ohmic contact can not be positioned at the below in the region of formation second electrode 163.Therefore, as shown in Fig. 1 (a), Fig. 1 (b), the hole 120h of ray structure body 120 can only be formed into light-emitting component 100a except with the region of a flank abutment except remainder.
First electrode 161 and the second electrode 163 can have volume different from each other, and the volume of the first electrode 161 can be greater than the volume of the second electrode 163.In addition, the thickness of the first electrode 161 and the second electrode 163 can be formed as about 70 μm to more than 80 μm, and can be formed as roughly the same thickness.Therefore, the horizontal section area of the first electrode 161 can be greater than the horizontal section area of the second electrode 163, and the such as horizontal section area of the first electrode 161 can have more than 0.8 times and the size being less than 1 times the horizontal section area of the first electrode 161 and the second electrode 163 being added the value of gained.
That is, described light-emitting component 100a comprises horizontal section area very large first electrode 161 compared with the horizontal section area of the second electrode 163.When the first conductive-type semiconductor layer 121 is n type semiconductor layer, the first electrode 161 also can be used as N-type electrode and plays function, and as mentioned above, when driving light-emitting component 100a, luminous and heating concentrates on the region being positioned with the first electrode 161.Therefore, by forming the horizontal section area of the first electrode 161 as the present embodiment in the mode of the horizontal section area being obviously greater than the second electrode 163, luminous change evenly can be made and improve the characteristics of luminescence in the whole light-emitting zone of light-emitting component 100a, effectively dispel the heat by the first electrode 161 and improve the radiating efficiency of light-emitting component 100a.
And the first electrode 161 directly contacts with the first contact electrode 130, and then also directly can contact with the ohmic contact regions 131 of the first contact electrode 130.Now, ohmic contact regions 131 is corresponding with the position of multiple hole 120h, and it is overall that hole 120h roughly systematicness is configured to ray structure body 120.Thus, electric current can be made to disperse equably in the horizontal direction and improve the electrical characteristics of light-emitting component 100a, effectively externally discharge by ohmic contact regions 131 and the first electrode 161 heat that ray structure body 120 produces.
And, do not make the part of the first contact electrode 130 and the first conductive-type semiconductor layer 121 ohmic contact be positioned at the below in the region of formation second electrode 163, thus the heat produced in the part of the first conductive-type semiconductor layer 121 and the first contact electrode 130 ohmic contact can be made all to be discharged by the first electrode 161.Therefore, can further improve the radiating efficiency of light-emitting component 100a.
As mentioned above, according to the utility model, the luminous efficiency of light-emitting component 100a and radiating efficiency improve, thus can improve reliability and life-span.
On the other hand, the first electrode 161 and the second electrode 163 can comprise metallic and Jie and put nonmetal character material between described metallic.In addition, the first electrode 161 and the second electrode 163 can comprise metallic sintered body respectively, and described metallic sintered body comprises described metallic and nonmetal character material.In described metallic sintered body, metallic can be formed as and be sintered and the form that is configured with multiple particle (grain), can be situated between and put nonmetal character material in the region at least partially between metallic.This nonmetal character material can play buffering (buffer) effect relaxing and can produce at the stress (stress) of the first electrode 161 and the second electrode 163.Thus, the mechanical stability of the first electrode 161 and the second electrode 163 improves, and can reduce the stress that can be applied to ray structure body 120 from the first electrode 161 and the second electrode 163.
First electrode 161 and the second electrode 163 can comprise metallic according to the ratio being 80wt% to 98wt% relative to the first electrode 161 and the respective quality of the second electrode 163 respectively.First electrode 161 and the second electrode 163 comprise the metallic of above-mentioned ratio, excellent thermal conductivity and conductivity can be had thus, effectively can cushion the stress that can produce at the first electrode 161 and the second electrode 163 and improve the mechanical stability of the first electrode 161 and the second electrode 163.
As long as metallic is for having the material of thermal conductivity and conductivity, then and indefinite, such as Cu, Au, Ag, Pt etc. can be comprised.Nonmetal character material can be derived from the material of the sintering object becoming to be formed electrode, such as, can be polymer (polymer) material comprising C.
In the above-described embodiments, metallic is illustrated as in metallic sintered body form and is included in the first electrode 161 and the second electrode 163, but the utility model is not limited thereto.Unlike this, the first electrode 161 and the second electrode 163 are also formed by the evaporation of metal and/or plating.In the case, the first electrode 161 and the second electrode 163 can be made up of multilayer.
In the present embodiment, the first electrode 161 and the second electrode 163 can have the side substantially vertical relative to the upper surface of the second insulation division 153.But the utility model is not limited thereto, as shown in Figure 3, the first electrode 261 and the second electrode 263 also can have inclined side respectively.
Fig. 3 is the profile of the light-emitting component 100b that another embodiment of the present utility model is described, compared with the light-emitting component 100a of Fig. 1 (a), Fig. 1 (b) and Fig. 2, the first electrode 261 and the second electrode 263 have inclined side.
With reference to Fig. 3, the first electrode 261 and the second electrode 263 can comprise inclined side respectively.Particularly, as shown in Figure 3, the inclined side that the gradient that the first electrode 261 and the second electrode 263 can comprise the tangent line TL of the side to its vertical section respectively changes.Specifically, to the gradient of the tangent line TL of the side of the first electrode 261 and the respective vertical section of the second electrode 263 along increasing from the direction of lower to upper part, can again increase via the specific point of inflexion afterwards.Therefore, the region that the gradient of the region that the gradient that the first electrode 261 and the respective inclined side of the second electrode 263 can comprise described tangent line TL increases and described tangent line TL reduces.
The inclined side that the gradient that first electrode 261 and the second electrode 263 comprise the tangent line TL of the side to its vertical section respectively changes, the first electrode 261 and the respective horizontal section area of the second electrode 263 can change along the vertical direction thus.Such as, as shown in the figure, the first electrode 261 and the respective horizontal section area of the second electrode 263 can diminish to the direction of the upper surface away from ray structure body 120.
Therefore, the first electrode 261 and the second electrode 263 can determine its shape in the mode of the side with above-mentioned form respectively, such as, can be formed as the form being similar to butt arch.The inclined side that the gradient that first electrode 261 and the second electrode 263 comprise the tangent line TL of the side to its vertical section changes, thus the mechanical stability that can improve the interface of the first electrode 261 and the second electrode 263 and the 3rd insulation division 170.
Referring again to Fig. 1 (a), Fig. 1 (b) and Fig. 2, the first electrode 161 and the second electrode 163 can directly contact with the first contact electrode 130 and the second contact electrode 140 respectively.Namely, first electrode 161 and the second electrode 163 can be formed in the mode directly touched on the first contact electrode and the second contact electrode respectively, thus when utilizing plating, the formation especially added of crystal seed layer if necessary (seedlayer) can be omitted, or when utilizing welding (solder), the formation especially added of wetting layer if necessary (wetting) can be omitted.But the utility model is not limited thereto.
On the other hand, the beeline in the interval between the first electrode 161 and the second electrode 163 is about 10 μm to 80 μm.Thus, can prevent interelectrode interval from broadening and the forward voltage (V of light-emitting component 100a
f) increase, in addition, the horizontal section area of the first electrode 161 and the second electrode 163 can be increased according to the degree reducing interelectrode interval, thus the radiating efficiency of light-emitting component 100a can be improved.
3rd insulation division 170 can be formed on ray structure body 120 in the mode of the side covering the first electrode 161 and the second electrode 163 at least partly.At the upper surface of the 3rd insulation division 170, the first electrode 161 and the second electrode 163 can be exposed.
3rd insulation division 170 has electrical insulating property, covers the side of the first electrode 161 and the second electrode 163 and makes it effectively insulate each other.Meanwhile, the 3rd insulation division 170 can play the effect of support first electrode 161 and the second electrode 163.The upper surface of the 3rd insulation division 170 can be formed side by side according to the height roughly the same with the upper surface of the first electrode 161 and the second electrode 163.
3rd insulation division 170 can comprise insulating polymers and/or insulating ceramics (ceramic), such as, can comprise the material as epoxy molding plastic (EpoxyMoldingCompound, EMC), Si resin.In addition, the 3rd insulation division 170 also can comprise as TiO
2the light reflective of particle and light diffusing particles.
In addition, be different from shown in figure, till the 3rd insulation division 170 also can be covered to ray structure body 120 side, in the case, from the lighting angle meeting difference of the light that ray structure body 120 sends.Such as, when the 3rd insulation division 170 be covered to further ray structure body 120 side at least partially till, the part in the light that the side of ray structure body 120 sends can reflect to the lower surface of ray structure body 120.As mentioned above, by the region of regulating allocation the 3rd insulation division 170, the lighting angle of adjustable light-emitting component 100a.
In addition, light-emitting component 100a also can comprise the first pad electrode (not shown) and the second pad electrode (not shown).Described first pad electrode and the second pad electrode can be positioned on the 3rd insulation division 170, can respectively with the first electrode 161 and the second electrode 163 electrical contact.
When being applied in by light-emitting component 100a in module (module) etc., the first pad electrode and the second pad electrode can make light-emitting component 100a stably be installed to the substrate etc. especially added.Such as, when the first electrode 161 and the second electrode 163 comprise Cu or Ag particles sintering body, the first electrode 161 and the second electrode 163 wetability to welding etc. is not good enough.Therefore, by so that the first pad electrode and the second pad electrode are configured on the 3rd insulation division 170, Absorbable organic halogens ground installing light emitting element 100a.
First electronic pads and the second electronic pads can comprise the conductive material as metal, such as, can comprise Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Sn, Cu, Ag, Bi, In, Zn, Sb, Mg, Pb etc.In addition, the first electronic pads and the second electronic pads can be made up of single or multiple lift respectively.
Wavelength conversion section can be positioned on the lower surface of ray structure body 120.
The wavelength of the convertible light sent from ray structure body 120 of wavelength conversion section and send the light of the wave band needed for light-emitting component.What wavelength conversion section can comprise fluorophor and hold described fluorophor holds body.Described fluorophor can comprise the various fluorophor known by those of ordinary skill, can comprise at least one in garnet (garnet) type fluorophor, aluminate (aluminate) fluorophor, sulphide phosphor, nitrogen oxide fluorophor, nitride phosphor, fluorides fluorophor, silicate phosphor.Hold body and also can use material known by those of ordinary skill, such as, can comprise the fluoropolymer resin as epoxy (epoxy) resin or acrylic acid series (acrylic) resin or silicones.In addition, wavelength conversion section can be made up of single or multiple lift.
Described wavelength conversion section can cover the lower surface of ray structure body 120, and then till the side that can be covered to ray structure body 120, and then can also be formed in the mode till the side being covered to the 3rd insulation division 170.
In the present embodiment, the light-emitting component 100a with the ray structure body 120 comprising multiple hole 120h is illustrated, but the utility model is not limited thereto.The configuration relation that be combined with each other of ray structure body 120, first contact electrode 130 and the second contact electrode 140, first insulation division 151 and the second insulation division 153 can realize various distortion, and the light-emitting component of this form through distortion is also contained in scope of the present utility model.
Fig. 4 (a), Fig. 4 (b) and Fig. 5 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
The light-emitting component 100c of the embodiment of Fig. 4 (a), Fig. 4 (b) and Fig. 5 is roughly similar to the light-emitting component 100a of Fig. 1 (a), Fig. 1 (b) and Fig. 2, but there are differences at the 3rd peristome 153a, in addition, also comprise the first wiring layer 181 and the second wiring layer 183 in there are differences.Below, centered by discrepancy, the light-emitting component 100c of the present embodiment is described, to identical formation detailed.
Fig. 4 (a) is the vertical view of light-emitting component 100c, Fig. 4 (b) is the vertical view that the position of hole 120h and the position of the 3rd peristome 153a and the 4th peristome 153b are described, Fig. 5 is the profile of the section representing the region corresponding with the B-B line of Fig. 4 (a) and Fig. 4 (b).
With reference to Fig. 4 (a), Fig. 4 (b) and Fig. 5, light-emitting component 100c can comprise: ray structure body 120, and it comprises the first conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125; First contact electrode 130; Second contact electrode 140; First insulation division 151 and the second insulation division 153; First electrode 161; Second electrode 163; 3rd insulation division 170; First wiring layer 181; And second wiring layer 183.And then light-emitting component 100c also can comprise the first pad electrode and the second pad electrode (not shown), growth substrate (not shown) and wavelength conversion section (not shown).
3rd peristome 153a of the second insulation division 153 covers the first contact electrode 130, but can expose the first contact electrode 130 partly.Now, the 3rd peristome 153a can only be formed into be positioned with a part of hole 120h in porose 120h region on.Therefore, only a part of ohmic contact regions 131 is exposed at the 3rd peristome 153a, and residue ohmic contact regions 131 can be covered by the second insulation division 153.
3rd peristome 153a can locate on the contrary with the position of the 4th peristome 153b, specifically, when the 4th peristome 153b locates in the mode of the flank abutment with light-emitting component 100c, 3rd peristome 153a can locate in the mode adjacent with another side, and described another side and a described side are located on the contrary.
On the other hand, the light-emitting component 100c of the present embodiment also can comprise the first wiring layer 181 and the second wiring layer 183 being positioned at the first electrode 161 and the respective below of the second electrode 163.
First contact electrode 130 can be electrically connected with the first electrode 161 by the first wiring layer 181, and the second contact electrode 140 can be electrically connected with the second electrode 163 by the second wiring layer 183.
And then when being formed first electrode 161 and second electrode 163 by evaporation or plating mode, the first wiring layer 181 and the second wiring layer 183 can play the effect of crystal seed layer.Moreover, when being formed first electrode 161 and second electrode 163 by sintering processing, also can play the effect of wetting layer and contribute to stably forming the first electrode 161 and the second electrode 163.Therefore, the first electrode 161 and the second electrode 163 stably then arrive ray structure body 120 by the first wiring layer 181 and the second wiring layer 183.
Therefore, the first wiring layer 181 and the second wiring layer 183 can comprise metallics, can play the effect of crystal seed layer or wetting layer.Such as, the first wiring layer 181 and the second wiring layer 183 can comprise Cu, Au, Ag, Ni, Pt etc.
First wiring layer 181 and the second wiring layer 183 do not limit and are applied in the present embodiment, can apply other embodiments yet.
Fig. 6 (a), Fig. 6 (b) and Fig. 7 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
The light-emitting component 100d of the embodiment of Fig. 6 (a), Fig. 6 (b) and Fig. 7 is roughly similar to the light-emitting component 100a of Fig. 1 (a), Fig. 1 (b) and Fig. 2, but also comprise articulamentum 210 and the first pad electrode 231 and the second pad electrode 233 in there are differences.Below, centered by discrepancy, the light-emitting component 100d of the present embodiment is described, to identical formation detailed.
Fig. 6 (a) is the vertical view of light-emitting component 100d, Fig. 6 (b) is the vertical view that the position of hole 120h and the position of the 3rd peristome 153a and the 4th peristome 153b are described, Fig. 7 is the profile of the section representing the region corresponding with the C-C line of Fig. 6 (a) and Fig. 6 (b).
With reference to Fig. 6 (a), Fig. 6 (b) and Fig. 7, light-emitting component 100d can comprise: ray structure body 120, and it comprises the first conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125; First contact electrode 130; Second contact electrode 140; First insulation division 151 and the second insulation division 153; First electrode 161; Second electrode 163; 3rd insulation division 170; Articulamentum 210; And first pad electrode 231 and the second pad electrode 233.And then light-emitting component 100d also can comprise growth substrate (not shown) and wavelength conversion section (not shown).
Articulamentum 210 can be positioned on the first electrode 161, second electrode 163 and the 3rd insulation division 170.
Articulamentum 210 can comprise the first articulamentum 211, second articulamentum 213 and insulating material layer 215.First articulamentum 211 and the second articulamentum 213 lay respectively on the first electrode 161 and the second electrode 163, can be electrically connected with described first electrode 161 and the second electrode 163.Insulating material layer 215 makes the first articulamentum 211 and the second articulamentum 213 insulate.The upper surface of insulating material layer 215, first articulamentum 211 and the second articulamentum 213 can be formed side by side to form roughly conplane mode.
First articulamentum 211 and the second articulamentum 213 can comprise the metal or electroconductive oxide, conductive nitride etc. with conductivity, particularly can be formed by the metal comprising conductance higher Au, Ag, Cu, Ni, Pt etc.Insulating material layer 215 can comprise SiO
2, SiN
x, or insulating properties macromolecule etc.
First pad electrode 231 and the second pad electrode 233 are positioned on articulamentum 210, are electrically connected with the first electrode 161 and the second electrode 163 by articulamentum 210.Specifically, the first pad electrode 231 and the second pad electrode 233 can be electrically connected with the first electrode 161 and the second electrode 163 respectively by the first articulamentum 211 and the second articulamentum 213.
First pad electrode 231 and the second pad electrode 233 can make light-emitting component 100d more stably be installed to the substrate etc. especially added.Such as, when the first electrode 161 and the second electrode 163 comprise Cu or Ag particles sintering body, the first electrode 161 and the second electrode 163 wetability to welding etc. is not good enough.Therefore, by so that the first pad electrode and the second pad electrode to be configured on the 3rd insulation division 170 stably installing light emitting element 100d.
And then the horizontal section area of the first pad electrode 231 can be less than the horizontal section area of the first electrode 161, the horizontal section area of the second pad electrode 233 can be greater than the horizontal section area of the second electrode 163.Particularly, the horizontal section area of the first pad electrode 231 can be roughly the same with the horizontal section area of the second pad electrode 233.
When the horizontal section area of the first electrode 161 is far longer than the horizontal section area of the second electrode 163, also can occur bad when light-emitting component being installed to the secondary substrate as printed circuit board (PrintedCircuitBoard, PCB).In addition, in order to this light-emitting component is stably installed to secondary substrate, the conductive pattern of the part at described secondary substrate installing light emitting element need be changed.But the light-emitting component 100d of the present embodiment also comprises the first pad electrode 231 and the second pad electrode 233, can form the electrode in the face of the secondary substrate of installing light emitting element 100d thus with common light-emitting component 100d similarly.Therefore, can not add or change processing procedure and by common light-emitting component installation method, light-emitting component 100d of the present utility model be applied in various application program, also can reduce the fraction defective installed in processing procedure.
First pad electrode 231 and the second pad electrode 233 can comprise the conductive material as metal, such as, can comprise Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Sn, Cu, Ag, Bi, In, Zn, Sb, Mg, Pb etc.
On the other hand, insulating material layer 215 can have the thickness of less than about 10 μm, prevents the situation of the decrease in efficiency externally discharging the heat discharged from the first electrode 161 and the second electrode 163 thus by insulating material layer 215.
Fig. 8 (a), Fig. 8 (b) and Fig. 9 are vertical view and the profile of the light-emitting component that another embodiment of the present utility model is described.
The light-emitting component 100e of the embodiment of Fig. 8 (a), Fig. 8 (b) and Fig. 9 is roughly similar to the light-emitting component 100d of Fig. 6 (a), Fig. 6 (b) and Fig. 7, but comprise multiple second electrode 163 in there are differences.Below, centered by discrepancy, the light-emitting component 100e of the present embodiment is described, to identical formation detailed.
Fig. 8 (a) is the vertical view of light-emitting component 100e, Fig. 8 (b) is the vertical view that the position of hole 120h and the position of the 3rd peristome 153a and the 4th peristome 153b are described, Fig. 9 is the profile of the section representing the region corresponding with the D-D line of Fig. 8 (a) and Fig. 8 (b).
With reference to Fig. 8 (a), Fig. 8 (b) and Fig. 9, light-emitting component 100e can comprise: ray structure body 120, and it comprises the first conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125; First contact electrode 130; Second contact electrode 140; First insulation division 151 and the second insulation division 153; First electrode 161; Second electrode 163; 3rd insulation division 170; Articulamentum 210; And first pad electrode 231 and the second pad electrode 233.And then light-emitting component 100e also can comprise growth substrate (not shown) and wavelength conversion section (not shown).
Second electrode 163 can be formed as multiple.Thus, compared with the light-emitting component 100d of Fig. 6 (a), Fig. 6 (b) and Fig. 7, the number of hole 120h can be made to increase, the area of the 3rd peristome 153a can be made to change large, the horizontal section area of the first electrode 161 also can be made to increase.Second electrode 163 can be spaced, and a part of hole 120h is configurable between the second electrode 163.
According to the present embodiment, the horizontal section area of the first electrode 161 increases further, thus can increase the radiating efficiency of light-emitting component 100e further, also can improve the characteristics of luminescence.
On the other hand, the first pad electrode 231 and the second pad electrode 233 can also be omitted.
Above, multiple embodiment of the present utility model is illustrated, but the utility model is not limited to the various embodiments described above and feature.By combining and replace the technical characteristic illustrated in an embodiment, the utility model changed also all is included in scope of the present utility model, can realize various distortion and change within the scope of the technological thought not departing from Claims scope of the present utility model.
Claims (18)
1. a light-emitting component, is characterized in that comprising:
Ray structure body, it comprises the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and the active layer between described first conductive-type semiconductor layer and described second conductive-type semiconductor layer;
First contact electrode and the second contact electrode, be positioned on described ray structure body, respectively with described first conductive-type semiconductor layer and described second conductive-type semiconductor layer ohmic contact;
First insulation division and the second insulation division, cover described first contact electrode and described second contact electrode partly;
First electrode and the second electrode, be positioned on described ray structure body, is electrically connected to described first contact electrode and described second contact electrode respectively;
3rd insulation division, it covers the side of described first electrode and described second electrode;
Articulamentum, it is positioned on described first electrode, described second electrode and described 3rd insulation division; And
First pad electrode and the second pad electrode, be positioned on described articulamentum; And
Described first pad electrode and described second pad electrode are electrically connected to described first electrode and described second electrode respectively by described articulamentum,
The horizontal area of described first pad electrode is less than the horizontal area of described first electrode, and the horizontal area of described second pad electrode is greater than the horizontal area of described second electrode.
2. light-emitting component according to claim 1, is characterized in that:
Described first electrode is positioned in the part of described first contact electrode and described first conductive-type semiconductor layer ohmic contact.
3. light-emitting component according to claim 2, is characterized in that:
The part of described first contact electrode and described first conductive-type semiconductor layer ohmic contact is not positioned at the below of described second electrode.
4. light-emitting component according to claim 2, is characterized in that:
Described first contact electrode comprises and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact,
Described first electrode all contacts with described multiple ohmic contact regions of described first contact electrode.
5. light-emitting component according to claim 2, is characterized in that:
Described first contact electrode comprises and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact,
In described multiple ohmic contact regions only a part with described first electrode contact.
6. light-emitting component according to claim 5, is characterized in that also comprising:
First wiring layer, it is positioned at the below of described first electrode; And
Second wiring layer, it is positioned at the below of described second electrode; And
A part for described first wiring layer contacts with described first contact electrode, and a part for described second wiring layer contacts with described second contact electrode.
7. light-emitting component according to claim 6, is characterized in that:
A part for described second insulation division is between described first wiring layer and described first contact electrode.
8. light-emitting component according to claim 1, is characterized in that:
The horizontal section area of described first electrode is described first electrode and described second electrode horizontal section area sum separately more than 0.8 times and is less than 1 times.
9. light-emitting component according to claim 1, is characterized in that:
The horizontal area of described first pad electrode is identical with the horizontal area of described second pad electrode.
10. light-emitting component according to claim 1, is characterized in that, described articulamentum comprises:
Insulating material layer;
First articulamentum, described first electrode is electrically connected with described first pad electrode by it, and through described insulating material layer; And
Second articulamentum, described second electrode is electrically connected with described second pad electrode by it, and through described insulating material layer.
11. light-emitting components according to claim 1, is characterized in that:
Described second electrode is formed as multiple, and described second electrode is electrically connected with described second pad electrode.
12. light-emitting components according to claim 11, is characterized in that:
Described first contact electrode comprises and contacts with described first conductive-type semiconductor layer and realize multiple ohmic contact regions of ohmic contact,
A part in described multiple ohmic contact regions is configured between described second electrode.
13. light-emitting components according to claim 1, is characterized in that:
Described first electrode and described second electrode comprise metallic and Jie respectively and put nonmetal character material between described metallic.
14. light-emitting components according to claim 13, is characterized in that:
Described first electrode and described second electrode comprise inclined side respectively, the side that the tangential tilt degree that described inclined side comprises described first electrode and described second electrode vertical section separately changes.
15. light-emitting components according to claim 1, is characterized in that:
Described ray structure body also comprises described active layer and described second conductive-type semiconductor layer are exposed described first conductive-type semiconductor layer partly region by removing partly,
Described first contact electrode by expose partly described first conductive-type semiconductor layer region and with described first conductive-type semiconductor layer ohmic contact.
16. light-emitting components according to claim 15, is characterized in that:
The region of exposing described first conductive-type semiconductor layer is partly formed as the form in multiple hole.
17. light-emitting components according to claim 16, is characterized in that:
Described second contact electrode is positioned on described second conductive-type semiconductor layer,
Described first insulation division covers described second contact electrode and described ray structure body, described first insulation division comprises the first peristome and the second peristome, described first peristome and described second peristome make a part for the part in the region of exposing described first conductive-type semiconductor layer partly and described second contact electrode expose respectively
Described first contact electrode covers described first insulation division at least partly, and described first contact electrode is contacted with described first conductive-type semiconductor layer by described first peristome,
Described second insulation division covers described first contact electrode partly, described second insulation division comprises the 3rd peristome and the 4th peristome, described 3rd peristome makes described first contact electrode expose partly, and the position of described 4th peristome and described second peristome configures accordingly and a part for described second contact electrode is exposed.
18. light-emitting components according to claim 17, is characterized in that:
Described first electrode is contacted with described first contact electrode by described 3rd peristome, and described second electrode is contacted with described second contact electrode by described 4th peristome,
Described multiple Kong Jun is positioned at the below in the region of described 3rd peristome.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140156839A KR102263066B1 (en) | 2014-11-12 | 2014-11-12 | Light emitting device |
| KR10-2014-0156839 | 2014-11-12 |
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| CN205159366U true CN205159366U (en) | 2016-04-13 |
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| CN201520893395.2U Active CN205159366U (en) | 2014-11-12 | 2015-11-11 | Light -emitting component |
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| Country | Link |
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| KR (1) | KR102263066B1 (en) |
| CN (1) | CN205159366U (en) |
| TW (1) | TWM522468U (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109417111A (en) * | 2016-06-20 | 2019-03-01 | Lg伊诺特有限公司 | Semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3511990B1 (en) | 2016-09-10 | 2023-12-13 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
| CN115602765A (en) | 2016-09-13 | 2023-01-13 | 苏州立琻半导体有限公司（Cn） | Semiconductor device and semiconductor device package including the same |
| KR102390828B1 (en) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Semiconductor device |
| KR102639844B1 (en) * | 2018-10-30 | 2024-02-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7179670B2 (en) | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
| JP2011233650A (en) | 2010-04-26 | 2011-11-17 | Toshiba Corp | Semiconductor light-emitting device |
| KR101142965B1 (en) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | Wafer-level light emitting diode package and method of fabricating the same |
| KR102013364B1 (en) * | 2012-12-06 | 2019-10-21 | 서울바이오시스 주식회사 | Light emitting diode and application thereof |
| CN104995756A (en) | 2013-02-19 | 2015-10-21 | 皇家飞利浦有限公司 | A light emitting die component formed by multilayer structures |
-
2014
- 2014-11-12 KR KR1020140156839A patent/KR102263066B1/en active IP Right Grant
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109417111A (en) * | 2016-06-20 | 2019-03-01 | Lg伊诺特有限公司 | Semiconductor devices |
| CN109417111B (en) * | 2016-06-20 | 2021-10-26 | 苏州乐琻半导体有限公司 | Semiconductor device with a plurality of transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM522468U (en) | 2016-05-21 |
| KR20160056524A (en) | 2016-05-20 |
| KR102263066B1 (en) | 2021-06-10 |
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