JP4474892B2 - フリップチップ型ｌｅｄ - Google Patents

フリップチップ型ｌｅｄ Download PDF

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Publication number
JP4474892B2
JP4474892B2 JP2003354383A JP2003354383A JP4474892B2 JP 4474892 B2 JP4474892 B2 JP 4474892B2 JP 2003354383 A JP2003354383 A JP 2003354383A JP 2003354383 A JP2003354383 A JP 2003354383A JP 4474892 B2 JP4474892 B2 JP 4474892B2
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JP
Japan
Prior art keywords
layer
type
chip type
flip chip
nitride semiconductor
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Expired - Fee Related
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JP2003354383A
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English (en)
Japanese (ja)
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JP2004080050A (ja
JP2004080050A5 (enExample
Inventor
美和 高岡
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Nichia Corp
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Nichia Corp
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Priority to JP2003354383A priority Critical patent/JP4474892B2/ja
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Publication of JP2004080050A5 publication Critical patent/JP2004080050A5/ja
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JP2003354383A 2003-10-14 2003-10-14 フリップチップ型ｌｅｄ Expired - Fee Related JP4474892B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003354383A JP4474892B2 (ja) 2003-10-14 2003-10-14 フリップチップ型ｌｅｄ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003354383A JP4474892B2 (ja) 2003-10-14 2003-10-14 フリップチップ型ｌｅｄ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14187398A Division JP3531475B2 (ja) 1998-05-22 1998-05-22 フリップチップ型光半導体素子

Publications (3)

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JP2004080050A JP2004080050A (ja) 2004-03-11
JP2004080050A5 JP2004080050A5 (enExample) 2005-09-08
JP4474892B2 true JP4474892B2 (ja) 2010-06-09

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Family Applications (1)

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JP2003354383A Expired - Fee Related JP4474892B2 (ja) 2003-10-14 2003-10-14 フリップチップ型ｌｅｄ

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035664A1 (ja) 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP4297084B2 (ja) 2005-06-13 2009-07-15 住友電気工業株式会社 発光装置の製造方法および発光装置
US20070215998A1 (en) * 2006-03-20 2007-09-20 Chi Lin Technology Co., Ltd. LED package structure and method for manufacturing the same
JP4770745B2 (ja) * 2007-01-23 2011-09-14 三菱電機株式会社 半導体発光素子
WO2009106063A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
CN103050601B (zh) * 2009-03-11 2015-10-28 晶元光电股份有限公司 发光装置
US8471282B2 (en) * 2010-06-07 2013-06-25 Koninklijke Philips Electronics N.V. Passivation for a semiconductor light emitting device
US8987772B2 (en) * 2010-11-18 2015-03-24 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
JP2013021175A (ja) * 2011-07-12 2013-01-31 Toshiba Corp 半導体発光素子
JP5985322B2 (ja) * 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
JP2014096539A (ja) * 2012-11-12 2014-05-22 Tokuyama Corp 紫外発光素子、および発光構造体
JP2015079929A (ja) * 2013-09-11 2015-04-23 株式会社東芝 半導体発光装置及びその製造方法
JP7117136B2 (ja) 2018-04-20 2022-08-12 スタンレー電気株式会社 発光素子及び発光装置
CN118867072B (zh) * 2024-09-25 2024-12-06 罗化芯显示科技开发(江苏)有限公司 一种微led发光显示装置及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203388A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP3136672B2 (ja) * 1991-07-16 2001-02-19 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5358880A (en) * 1993-04-12 1994-10-25 Motorola, Inc. Method of manufacturing closed cavity LED
JPH09153644A (ja) * 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd ３族窒化物半導体表示装置
JP3264163B2 (ja) * 1996-01-18 2002-03-11 日亜化学工業株式会社 窒化物半導体レーザ素子
JPH1197742A (ja) * 1997-09-22 1999-04-09 Nichia Chem Ind Ltd 窒化物半導体素子
JP3322300B2 (ja) * 1997-11-14 2002-09-09 日亜化学工業株式会社 窒化ガリウム系半導体発光素子と受光素子

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Publication number Publication date
JP2004080050A (ja) 2004-03-11

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