JP4473352B2 - 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 - Google Patents
低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 Download PDFInfo
- Publication number
- JP4473352B2 JP4473352B2 JP14480798A JP14480798A JP4473352B2 JP 4473352 B2 JP4473352 B2 JP 4473352B2 JP 14480798 A JP14480798 A JP 14480798A JP 14480798 A JP14480798 A JP 14480798A JP 4473352 B2 JP4473352 B2 JP 4473352B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- coating
- silica
- relative dielectric
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 106
- 238000000576 coating method Methods 0.000 title claims description 59
- 239000011248 coating agent Substances 0.000 title claims description 54
- 239000000377 silicon dioxide Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 19
- 239000007788 liquid Substances 0.000 title claims description 14
- 239000003054 catalyst Substances 0.000 claims description 17
- 239000007859 condensation product Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 238000006460 hydrolysis reaction Methods 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000002798 polar solvent Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 230000007062 hydrolysis Effects 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- 150000001298 alcohols Chemical class 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 150000005846 sugar alcohols Polymers 0.000 claims description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 3
- 238000002360 preparation method Methods 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- -1 silane compound Chemical class 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000006482 condensation reaction Methods 0.000 description 6
- 230000003301 hydrolyzing effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003377 acid catalyst Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- NJVRGMJDJJSZHF-UHFFFAOYSA-N [SiH4].C(CCC)O[SiH](OCCCC)OCCCC Chemical compound [SiH4].C(CCC)O[SiH](OCCCC)OCCCC NJVRGMJDJJSZHF-UHFFFAOYSA-N 0.000 description 1
- KVXNKFYSHAUJIA-UHFFFAOYSA-N acetic acid;ethoxyethane Chemical compound CC(O)=O.CCOCC KVXNKFYSHAUJIA-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- UWGJCHRFALXDAR-UHFFFAOYSA-N diethoxy-ethyl-methylsilane Chemical compound CCO[Si](C)(CC)OCC UWGJCHRFALXDAR-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WPJVMPQSTHTWKF-UHFFFAOYSA-N ethoxy-dimethoxy-methylsilane Chemical compound CCO[Si](C)(OC)OC WPJVMPQSTHTWKF-UHFFFAOYSA-N 0.000 description 1
- RAQWTXJGPUSSID-UHFFFAOYSA-N ethoxy-ethyl-dimethoxysilane Chemical compound CCO[Si](CC)(OC)OC RAQWTXJGPUSSID-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Organic Insulating Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14480798A JP4473352B2 (ja) | 1998-05-26 | 1998-05-26 | 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 |
| TW88106890A TWI234787B (en) | 1998-05-26 | 1999-04-28 | Silica-based coating film on substrate and coating solution therefor |
| US09/302,471 US6875262B1 (en) | 1998-05-26 | 1999-04-30 | Silica-based coating film on substrate and coating solution therefor |
| KR1019990018940A KR100334550B1 (ko) | 1998-05-26 | 1999-05-25 | 기판상의 실리카계 피막 및 그 도포액 |
| US11/067,622 US7135064B2 (en) | 1998-05-26 | 2005-02-28 | Silica-based coating film on substrate and coating solution therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14480798A JP4473352B2 (ja) | 1998-05-26 | 1998-05-26 | 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11340219A JPH11340219A (ja) | 1999-12-10 |
| JPH11340219A5 JPH11340219A5 (enExample) | 2005-10-06 |
| JP4473352B2 true JP4473352B2 (ja) | 2010-06-02 |
Family
ID=15370929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14480798A Expired - Fee Related JP4473352B2 (ja) | 1998-05-26 | 1998-05-26 | 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4473352B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60138327D1 (de) * | 2000-02-28 | 2009-05-28 | Jsr Corp | Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid |
| US7128976B2 (en) | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
| DE60123512T2 (de) * | 2000-04-17 | 2007-05-16 | Jsr Corp. | Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Film auf Siliciumoxid-Basis |
| JP4572444B2 (ja) * | 2000-05-22 | 2010-11-04 | Ｊｓｒ株式会社 | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP4568959B2 (ja) * | 2000-05-22 | 2010-10-27 | Ｊｓｒ株式会社 | シリコーン含有組成物および膜形成用組成物 |
| JP4530113B2 (ja) * | 2000-07-06 | 2010-08-25 | Ｊｓｒ株式会社 | 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP4507377B2 (ja) * | 2000-09-25 | 2010-07-21 | Ｊｓｒ株式会社 | ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料 |
| CN100568457C (zh) | 2003-10-02 | 2009-12-09 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| WO2005068540A1 (ja) | 2004-01-16 | 2005-07-28 | Jsr Corporation | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
| WO2005068539A1 (ja) | 2004-01-16 | 2005-07-28 | Jsr Corporation | ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜 |
| JP4530130B2 (ja) * | 2004-01-16 | 2010-08-25 | Ｊｓｒ株式会社 | ポリマー膜の形成方法 |
| JP5110238B2 (ja) | 2004-05-11 | 2012-12-26 | Ｊｓｒ株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
| JP5110239B2 (ja) | 2004-05-11 | 2012-12-26 | Ｊｓｒ株式会社 | 有機シリカ系膜の形成方法、膜形成用組成物 |
| JP4798329B2 (ja) * | 2004-09-03 | 2011-10-19 | Ｊｓｒ株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
| JP5035819B2 (ja) * | 2006-03-17 | 2012-09-26 | 国立大学法人信州大学 | 多孔質シリカ被膜の形成方法及びそれに用いられる多孔質シリカ形成用塗布液 |
| US11198797B2 (en) * | 2019-01-24 | 2021-12-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates |
-
1998
- 1998-05-26 JP JP14480798A patent/JP4473352B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11340219A (ja) | 1999-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4473352B2 (ja) | 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 | |
| KR101840187B1 (ko) | 무기 폴리실라잔 수지 | |
| KR100298100B1 (ko) | 층간절연도포막형성용의 폴리실라잔계 도포액 및 이를 이용한 이산화규소계 층간절연도포막의 형성방법 | |
| JPH09137121A (ja) | シリカ系被膜形成用塗布液及びその製造方法 | |
| JP2006054353A (ja) | フラットバンドシフトの少ないシリカ質膜およびその製造法 | |
| JP3998979B2 (ja) | 低誘電率シリカ系被膜の形成方法および低誘電率被膜付半導体基板 | |
| KR100451044B1 (ko) | 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법 | |
| KR100334550B1 (ko) | 기판상의 실리카계 피막 및 그 도포액 | |
| JPWO2001048806A1 (ja) | 低誘電率シリカ系被膜の形成方法および低誘電率被膜付半導体基板 | |
| EP1412434B1 (en) | Siloxane resins | |
| JPH11340220A (ja) | シリカ系被膜形成用塗布液及びその製造方法 | |
| KR100645682B1 (ko) | 유기실록산 수지 및 이를 이용한 절연막 | |
| JP3635443B2 (ja) | ＳｉＯ２被膜の形成方法 | |
| WO2007111270A1 (ja) | シリカ系被膜形成用組成物およびシリカ系被膜 | |
| JP3228714B2 (ja) | シリカ系被膜及びその製造方法 | |
| US20030064254A1 (en) | Siloxane resins | |
| US20030152784A1 (en) | Process for forming hydrogen silsesquioxane resins | |
| JPH1129743A (ja) | シリカ系被膜形成用塗布液、その製造法及びシリカ系被膜 | |
| KR100450257B1 (ko) | 유기실리케이트 중합체 및 이를 함유하는 저유전 절연막 | |
| JPH1129744A (ja) | シリカ系被膜形成用塗布液、その製造法及びシリカ系被膜 | |
| KR100508902B1 (ko) | 유기실리케이트 중합체 및 이를 함유하는 절연막 | |
| JPH0834957A (ja) | 酸化物被膜形成用塗布液、酸化物被膜の製造法および半導体装置 | |
| JPH1036769A (ja) | 酸化物被膜形成用塗布液、酸化物被膜の製造法、酸化物被膜及び半導体装置 | |
| JPH1041289A (ja) | シリカ系被膜形成用塗布液、その製造法、シリカ系被膜及び半導体装置 | |
| JP2000212508A (ja) | シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜およびそれを用いた半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050523 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050523 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070427 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070517 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070717 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070809 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071009 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071106 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20071130 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20090608 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100125 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100305 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130312 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140312 Year of fee payment: 4 |
|
| LAPS | Cancellation because of no payment of annual fees |