JP4473352B2 - 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 - Google Patents

低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 Download PDF

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Publication number
JP4473352B2
JP4473352B2 JP14480798A JP14480798A JP4473352B2 JP 4473352 B2 JP4473352 B2 JP 4473352B2 JP 14480798 A JP14480798 A JP 14480798A JP 14480798 A JP14480798 A JP 14480798A JP 4473352 B2 JP4473352 B2 JP 4473352B2
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JP
Japan
Prior art keywords
dielectric constant
coating
silica
relative dielectric
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP14480798A
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English (en)
Japanese (ja)
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JPH11340219A5 (enExample
JPH11340219A (ja
Inventor
達彦 渋谷
嘉男 萩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP14480798A priority Critical patent/JP4473352B2/ja
Priority to TW88106890A priority patent/TWI234787B/zh
Priority to US09/302,471 priority patent/US6875262B1/en
Priority to KR1019990018940A priority patent/KR100334550B1/ko
Publication of JPH11340219A publication Critical patent/JPH11340219A/ja
Priority to US11/067,622 priority patent/US7135064B2/en
Publication of JPH11340219A5 publication Critical patent/JPH11340219A5/ja
Application granted granted Critical
Publication of JP4473352B2 publication Critical patent/JP4473352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
JP14480798A 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 Expired - Fee Related JP4473352B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14480798A JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法
TW88106890A TWI234787B (en) 1998-05-26 1999-04-28 Silica-based coating film on substrate and coating solution therefor
US09/302,471 US6875262B1 (en) 1998-05-26 1999-04-30 Silica-based coating film on substrate and coating solution therefor
KR1019990018940A KR100334550B1 (ko) 1998-05-26 1999-05-25 기판상의 실리카계 피막 및 그 도포액
US11/067,622 US7135064B2 (en) 1998-05-26 2005-02-28 Silica-based coating film on substrate and coating solution therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14480798A JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法

Publications (3)

Publication Number Publication Date
JPH11340219A JPH11340219A (ja) 1999-12-10
JPH11340219A5 JPH11340219A5 (enExample) 2005-10-06
JP4473352B2 true JP4473352B2 (ja) 2010-06-02

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JP14480798A Expired - Fee Related JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法

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JP (1) JP4473352B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413647B1 (en) * 2000-02-28 2002-07-02 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
US7128976B2 (en) 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
EP1148105B1 (en) * 2000-04-17 2006-10-04 JSR Corporation Composition for film formation, method of film formation, and silica-based film
JP4572444B2 (ja) * 2000-05-22 2010-11-04 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4568959B2 (ja) * 2000-05-22 2010-10-27 Ｊｓｒ株式会社 シリコーン含有組成物および膜形成用組成物
JP4530113B2 (ja) * 2000-07-06 2010-08-25 Ｊｓｒ株式会社 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4507377B2 (ja) * 2000-09-25 2010-07-21 Ｊｓｒ株式会社 ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料
CN100568457C (zh) 2003-10-02 2009-12-09 株式会社半导体能源研究所 半导体装置的制造方法
EP1705208B1 (en) 2004-01-16 2013-03-20 JSR Corporation Composition for forming insulating film, method for producing same, silica insulating film, and method for forming same
KR101129875B1 (ko) 2004-01-16 2012-03-28 제이에스알 가부시끼가이샤 중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법 및 절연막
JP4530130B2 (ja) * 2004-01-16 2010-08-25 Ｊｓｒ株式会社 ポリマー膜の形成方法
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP4798329B2 (ja) * 2004-09-03 2011-10-19 Ｊｓｒ株式会社 絶縁膜形成用組成物、絶縁膜、およびその形成方法
JP5035819B2 (ja) * 2006-03-17 2012-09-26 国立大学法人信州大学 多孔質シリカ被膜の形成方法及びそれに用いられる多孔質シリカ形成用塗布液
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates

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Publication number Publication date
JPH11340219A (ja) 1999-12-10

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