JP4468115B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4468115B2
JP4468115B2 JP2004250474A JP2004250474A JP4468115B2 JP 4468115 B2 JP4468115 B2 JP 4468115B2 JP 2004250474 A JP2004250474 A JP 2004250474A JP 2004250474 A JP2004250474 A JP 2004250474A JP 4468115 B2 JP4468115 B2 JP 4468115B2
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JP
Japan
Prior art keywords
semiconductor chip
electrode
conductive member
semiconductor device
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004250474A
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English (en)
Japanese (ja)
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JP2006066813A (ja
JP2006066813A5 (enExample
Inventor
喜章 芦田
晃 武藤
一男 清水
俊幸 波多
賢哉 河野
直敬 田中
奈柄 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004250474A priority Critical patent/JP4468115B2/ja
Priority to US11/173,740 priority patent/US7432594B2/en
Publication of JP2006066813A publication Critical patent/JP2006066813A/ja
Publication of JP2006066813A5 publication Critical patent/JP2006066813A5/ja
Application granted granted Critical
Publication of JP4468115B2 publication Critical patent/JP4468115B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2004250474A 2004-08-30 2004-08-30 半導体装置 Expired - Fee Related JP4468115B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004250474A JP4468115B2 (ja) 2004-08-30 2004-08-30 半導体装置
US11/173,740 US7432594B2 (en) 2004-08-30 2005-06-30 Semiconductor chip, electrically connections therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004250474A JP4468115B2 (ja) 2004-08-30 2004-08-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2006066813A JP2006066813A (ja) 2006-03-09
JP2006066813A5 JP2006066813A5 (enExample) 2006-11-24
JP4468115B2 true JP4468115B2 (ja) 2010-05-26

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JP2004250474A Expired - Fee Related JP4468115B2 (ja) 2004-08-30 2004-08-30 半導体装置

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US (1) US7432594B2 (enExample)
JP (1) JP4468115B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12469816B2 (en) 2022-03-22 2025-11-11 Kabushiki Kaisha Toshiba Semiconductor device

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DE102005049687B4 (de) * 2005-10-14 2008-09-25 Infineon Technologies Ag Leistungshalbleiterbauteil in Flachleitertechnik mit vertikalem Strompfad und Verfahren zur Herstellung
JP4615506B2 (ja) * 2006-12-18 2011-01-19 三菱電機株式会社 樹脂封止型半導体装置
JP4840165B2 (ja) * 2007-01-29 2011-12-21 株式会社デンソー 半導体装置
JP2009200338A (ja) * 2008-02-22 2009-09-03 Renesas Technology Corp 半導体装置の製造方法
JP5075890B2 (ja) 2008-09-03 2012-11-21 株式会社東芝 半導体装置及び半導体装置の製造方法
KR100888236B1 (ko) 2008-11-18 2009-03-12 서울반도체 주식회사 발광 장치
JP5126278B2 (ja) 2010-02-04 2013-01-23 株式会社デンソー 半導体装置およびその製造方法
WO2012010942A2 (en) 2010-07-22 2012-01-26 Lupin Limited Novel pharmaceutical composition(s) of hiv protease inhibitor(s)
DE102011011861A1 (de) * 2011-02-21 2012-08-23 Osram Opto Semiconductors Gmbh Halbleiterchipgehäuseanordnung und Herstellungsverfahren
ITMI20112300A1 (it) 2011-12-19 2013-06-20 St Microelectronics Srl Realizzazione di dispositivi elettronici di tipo dsc tramite inserto distanziatore
US20140001480A1 (en) * 2012-07-02 2014-01-02 Infineon Technologies Ag Lead Frame Packages and Methods of Formation Thereof
US9478484B2 (en) * 2012-10-19 2016-10-25 Infineon Technologies Austria Ag Semiconductor packages and methods of formation thereof
US8906743B2 (en) * 2013-01-11 2014-12-09 Micron Technology, Inc. Semiconductor device with molded casing and package interconnect extending therethrough, and associated systems, devices, and methods
CN103531551A (zh) * 2013-09-26 2014-01-22 杰群电子科技（东莞）有限公司 一种半导体封装结构及其成型方法
JP6385234B2 (ja) * 2014-10-16 2018-09-05 三菱電機株式会社 半導体装置
JP6620037B2 (ja) * 2016-02-29 2019-12-11 新日本無線株式会社 半導体パッケージ及びその製造方法
JP6967335B2 (ja) * 2016-03-15 2021-11-17 ローム株式会社 半導体装置
JP2018056356A (ja) * 2016-09-29 2018-04-05 株式会社東芝 半導体装置
US10121742B2 (en) * 2017-03-15 2018-11-06 Amkor Technology, Inc. Method of forming a packaged semiconductor device using ganged conductive connective assembly and structure
EP3703119B1 (en) * 2017-10-26 2022-06-08 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20190071111A (ko) * 2017-12-14 2019-06-24 삼성전자주식회사 엑스선 검사 장비 및 이를 이용하는 반도체 장치 제조 방법
JP6995674B2 (ja) * 2018-03-23 2022-01-14 株式会社東芝 半導体装置
CN119631175A (zh) * 2022-08-05 2025-03-14 罗姆股份有限公司 半导体装置
JP2024118861A (ja) * 2023-02-21 2024-09-02 株式会社日立製作所 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3868777B2 (ja) 2001-09-11 2007-01-17 株式会社東芝 半導体装置
JP3627738B2 (ja) * 2001-12-27 2005-03-09 株式会社デンソー 半導体装置
JP3750680B2 (ja) * 2003-10-10 2006-03-01 株式会社デンソー パッケージ型半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12469816B2 (en) 2022-03-22 2025-11-11 Kabushiki Kaisha Toshiba Semiconductor device

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JP2006066813A (ja) 2006-03-09
US20060043618A1 (en) 2006-03-02
US7432594B2 (en) 2008-10-07

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