JP4463373B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP4463373B2 JP4463373B2 JP2000078301A JP2000078301A JP4463373B2 JP 4463373 B2 JP4463373 B2 JP 4463373B2 JP 2000078301 A JP2000078301 A JP 2000078301A JP 2000078301 A JP2000078301 A JP 2000078301A JP 4463373 B2 JP4463373 B2 JP 4463373B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxynitride
- film
- oxynitride layer
- concentration
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010408 film Substances 0.000 claims description 272
- 239000000758 substrate Substances 0.000 claims description 101
- 229910052710 silicon Inorganic materials 0.000 claims description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 83
- 239000010703 silicon Substances 0.000 claims description 83
- 239000012535 impurity Substances 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
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- 229910052760 oxygen Inorganic materials 0.000 description 21
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- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- 229910052698 phosphorus Inorganic materials 0.000 description 18
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
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- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- 230000008859 change Effects 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016024 MoTa Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
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- 230000008642 heat stress Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000078301A JP4463373B2 (ja) | 1999-03-23 | 2000-03-21 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-76992 | 1999-03-23 | ||
| JP7699299 | 1999-03-23 | ||
| JP2000078301A JP4463373B2 (ja) | 1999-03-23 | 2000-03-21 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006052926A Division JP4485480B2 (ja) | 1999-03-23 | 2006-02-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000340799A JP2000340799A (ja) | 2000-12-08 |
| JP2000340799A5 JP2000340799A5 (enrdf_load_stackoverflow) | 2006-04-27 |
| JP4463373B2 true JP4463373B2 (ja) | 2010-05-19 |
Family
ID=26418098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000078301A Expired - Fee Related JP4463373B2 (ja) | 1999-03-23 | 2000-03-21 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4463373B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3481902B2 (ja) | 2000-05-30 | 2003-12-22 | 株式会社東芝 | Ｔｆｔアレイの製造方法 |
| JP4239744B2 (ja) * | 2003-08-01 | 2009-03-18 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
| JP4479249B2 (ja) * | 2004-01-20 | 2010-06-09 | 凸版印刷株式会社 | 有機ｅｌ素子の製造方法 |
| KR101171192B1 (ko) | 2005-10-21 | 2012-08-06 | 삼성전자주식회사 | 박막트랜지스터 기판와 그 제조방법 |
| JP5459899B2 (ja) * | 2007-06-01 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20220122778A (ko) * | 2009-09-24 | 2022-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| WO2018169009A1 (ja) * | 2017-03-16 | 2018-09-20 | シャープ株式会社 | 撮像装置およびｘ線撮像装置 |
-
2000
- 2000-03-21 JP JP2000078301A patent/JP4463373B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000340799A (ja) | 2000-12-08 |
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