JP4459335B2 - 強誘電体トランジスタ型不揮発性記憶素子とその製造方法 - Google Patents

強誘電体トランジスタ型不揮発性記憶素子とその製造方法 Download PDF

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Publication number
JP4459335B2
JP4459335B2 JP29708999A JP29708999A JP4459335B2 JP 4459335 B2 JP4459335 B2 JP 4459335B2 JP 29708999 A JP29708999 A JP 29708999A JP 29708999 A JP29708999 A JP 29708999A JP 4459335 B2 JP4459335 B2 JP 4459335B2
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Japan
Prior art keywords
thin film
ferroelectric
film
nonvolatile memory
insulating
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Expired - Fee Related
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JP29708999A
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Japanese (ja)
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JP2001118941A5 (https=
JP2001118941A (ja
Inventor
康夫 垂井
匡彦 平井
和男 坂巻
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Canon Inc
Seiko NPC Corp
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Canon Inc
Seiko NPC Corp
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Priority to JP29708999A priority Critical patent/JP4459335B2/ja
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Publication of JP2001118941A5 publication Critical patent/JP2001118941A5/ja
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP29708999A 1999-10-19 1999-10-19 強誘電体トランジスタ型不揮発性記憶素子とその製造方法 Expired - Fee Related JP4459335B2 (ja)

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JP29708999A JP4459335B2 (ja) 1999-10-19 1999-10-19 強誘電体トランジスタ型不揮発性記憶素子とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29708999A JP4459335B2 (ja) 1999-10-19 1999-10-19 強誘電体トランジスタ型不揮発性記憶素子とその製造方法

Publications (3)

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JP2001118941A JP2001118941A (ja) 2001-04-27
JP2001118941A5 JP2001118941A5 (https=) 2006-11-30
JP4459335B2 true JP4459335B2 (ja) 2010-04-28

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JP29708999A Expired - Fee Related JP4459335B2 (ja) 1999-10-19 1999-10-19 強誘電体トランジスタ型不揮発性記憶素子とその製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10937887B2 (en) * 2018-07-06 2021-03-02 Samsung Electronics Co., Ltd. Semiconductor device
CN113871395A (zh) * 2020-06-30 2021-12-31 湘潭大学 三维铁电场效应晶体管存储单元、存储器及制备方法
US20220102558A1 (en) * 2020-09-30 2022-03-31 Renesas Electronics Corporation Semiconductor device
JP2023022365A (ja) * 2021-08-03 2023-02-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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